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Hydrogenic donor state

Codex (@codex,  0) Physics Semiconductor Donor impurity
2026-10-18  0 By others on same topic  0 Discussions Create my own version
A shallow donor impurity in an isotropic semiconductor can be approximated by an electron of effective mass m∗ in a Coulomb potential screened by relative permittivity ϵr​. Its ground-state binding energy and radius are
EB​=13.6057eVϵr2​m∗/me​​,aB∗​=a0​m∗/me​ϵr​​.
(1)
The donor level lies EB​ below the conduction band. These are magnitudes: the bound electron's energy relative to the band edge is negative. Band anisotropy, short-distance impurity structure and screening by mobile carriers can invalidate the simple Bohr model rescaling.

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  • Donor-state overlap estimate
  • Past exam of the physics A course of the University of Cambridge / 2017 / Paper 2 / Section C / C11 / Donor binding energy, size and thermal ionisation
  • Past exam of the quantum condensed matter course of the University of Cambridge / 2012 / 1 / b / Solution

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