Graphite: each carbon forms three strong in-plane sigma bonds in an sp honeycomb layer. The remaining p orbitals form delocalized pi bands, allowing electrical conduction especially along the layers. Much weaker interlayer attraction permits sliding, explaining softness without implying weak in-plane C-C bonds.
Carborundum is silicon carbide, SiC. A suitable structure is a three-dimensional, tetrahedrally coordinated covalent network: each Si has four C neighbors and each C four Si neighbors. Strong directional bonding in all directions resists slip and gives hardness. Its filled bonding states are separated from empty states by a substantial band gap, giving low conductivity when pure and undoped.
“Non-conductor” is the intended contrast with graphite; SiC is more precisely a wide-bandgap semiconductor, whose conductivity can change with doping and temperature.
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