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Incoming links: Semiconductor device-and-lead structure by Robert Noyce
Integrated circuit interconnect 2026-10-18
An integrated circuit interconnect is a conducting path joining circuit regions. In Robert Noyce's patent, deposited metal strips cross retained oxide on silicon; selected openings permit contact to the semiconductor while oxide prevents unwanted contact across p-n junctions. Figs. 3–5 combine detection, filtering and electronic amplifier functions using a transistor in one structure. The key is both connectivity and insulation: a metal path must touch its intended terminals while crossing other regions without shorting them.[ref]
Semiconductor device-and-lead structure by Robert Noyce. Description of Figs. 1–5, oxide tongues, metal strips and integrated circuit; claim 1
Robert Noyce Created 2026-10-18 Updated 2026-11-05
Robert Noyce devised a semiconductor device structure that integrates electrical connections with the semiconductor surface. His patent places conducting paths over an insulating layer and connects them to selected regions through openings in that layer. This makes interconnection part of fabrication rather than requiring every connection to be a separate external wire. The design connects surface insulation, device junctions and patterned conductors in the development of the integrated circuit.[ref]
Semiconductor device-and-lead structure by Robert Noyce. US2981877A, surface insulating layer, contact openings and deposited conducting leads
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Portrait of Robert Noyce
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