Semiconductor transport evidence for localization

Nevill Francis Mott's 1977 lecture discusses silicon deposited in a glow discharge. Injected Electrons provided a drift-mobility readout; electrical conductivity and temperature dependence tested localized-state transport and excitation toward a mobility edge. Varying temperature distinguishes transport regimes. The lecture gives no contact geometry or timing circuit here, so none is inferred. Its Figure 2 is schematic, not measured data.^[ref]

This evidence motivates a transport question beyond the closed-chain eigenvalue problem: how does a prepared charge disturbance move under the conditions of a real sample? The numerical figures above supply neither drift-mobility measurements nor a model of the deposition process. Finite-size concentration alone cannot reproduce an experimental electrical conductivity curve.

Finite temperature permits phonon-assisted hopping between localized eigenstates or thermal excitation toward a mobility edge; localized states therefore need not imply zero measured electrical conductivity at every nonzero temperature.^[ref]

Real dephasing destroys the relative wave phases needed for long-path interference. Observing coherent confinement requires the distance over which those wave phases survive to be long enough to explore the localized region, and the sample to be large enough to resolve it. Temperature alone is not an automatic switch: the actual inelastic processes set the relevant scales. Static elastic wave scattering preserves coherence within each realization. Loss of the ensemble-averaged coherent field through random wave phases is therefore not, by itself, physical dephasing of an individual sample.