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A researcher in spintronics whose review with Daniel Lacour relates electrical resistance to the magnetic configuration of layered devices. A magnetic tunnel junction consists of two magnetic conductors separated by a thin insulating barrier; quantum tunnelling through the barrier depends on the electronic states available for each electron spin. This produces tunnelling magnetoresistance, illustrating how the magnetic state of a device can be read through an electrical measurement.^[ref]

A researcher whose work with Alain Schuhl explains giant magnetoresistance through spin-dependent conduction in magnetic multilayers. In the Mott two-current model, the two electron spin channels can carry electric current with different resistances. Changing the relative magnetization directions of adjacent layers changes how strongly each channel is scattered. Their treatment connects microscopic scattering with a measurable resistance change and makes explicit the assumptions needed to treat the spin channels independently.^[ref]

The Mott two-current model treats the two spin populations as parallel conduction channels when spin-flip scattering is weak. Thus $\sigma ={\sigma }_{\uparrow }+{\sigma }_{\downarrow }$ and ${\rho }^{-1}={\rho }_{\uparrow }^{-1}+{\rho }_{\downarrow }^{-1}$. Light, broad-band carriers conduct efficiently; scattering into narrow $d$-like states relaxes their current. In a simple spin-conserving $s$–$d$ picture,In copper, the filled $d$ bands supply little final-state phase space at $E_F$, so both spin channels have low resistivity. In cobalt, the nearly filled majority $d$ band suppresses majority-channel scattering, while minority $d$ states remain available. The stated iron reversal corresponds to stronger scattering-weighted majority-channel phase space: its majority $d$ band is not closed as in cobalt. Band filling, exchange splitting, velocities and scattering matrix elements set this scattering-weighted spin-channel asymmetry; majority population alone does not select the better conductor. The given iron ordering is a material/scattering input, not a universal consequence of the two-current postulate. Different impurities and interfaces can change the asymmetry.^[ref]

Exchange-split bands in a ferromagnet generally give a different spin-resolved density of states for each spin branch, $D_{\uparrow }(E_F)$ and $D_{\downarrow }(E_F)$. If spin is approximately conserved across a multilayer, its two spin channels conduct in parallel. A spin valve combines a comparatively fixed reference-layer magnetization with a soft free layer that rotates in a small applied field. Its readout depends on the relative angle, not simply the absolute spin population. Biasing the layers near a perpendicular alignment gives a useful linear response instead of operating at the flat parallel/antiparallel extrema.

In giant magnetoresistance, a metallic spacer separates ferromagnetic layers. Spin-dependent bulk and interface scattering make their channel resistances unequal. The density of available final $d$ states influences scattering of more mobile states; however, a large total density of states does not by itself guarantee a large conductivity. The scattering-weighted spin-channel asymmetry also involves velocity and scattering matrix elements. In the elementary identical-layer two-current resistor model, let each magnetic layer have resistances $a,b$ in the two spin channels and neglect spacer resistance. Parallel moments give channels $2a$ and $2b$, while antiparallel moments give $a+b$ in each channel. ThereforeOne favorable spin channel traverses both aligned layers efficiently; reversal removes that common easy path. A conducting spacer adds resistance, and spin mixing weakens the separate-channel approximation. The channel asymmetry is material/interface dependent, so positive magnetoresistance is not a theorem for every pair of different ferromagnets.^[ref]

In tunnelling magnetoresistance, the spacer is an ultrathin insulator and current flows across a magnetic tunnel junction. In the simple spin-conserving density-of-states tunnelling magnetoresistance model, assume spin-independent matrix elements and low voltage. Available initial and final states giveWriting $P_i=(D_{i\uparrow }-D_{i\downarrow })/(D_{i\uparrow }+D_{i\downarrow })$ and $G_0=C{D}_1{D}_2/2$, these become $G_P=G_0(1+P_1{P}_2)$ and $G_{AP}=G_0(1-P_1{P}_2)$. ThusThe effective tunnelling polarization can depend on the barrier and orbital symmetry, not just a bulk density-of-states sketch. Crystalline MgO junctions exploit symmetry-selective transmission, so the elementary product model is not a quantitative universal formula for them.^[ref]

Both devices convert a free-layer rotation into an electrical change. A useful approximate GMR interpolation is $R(\theta )=R_P+\Delta R(1-\cos \theta )/2$; the elementary tunnelling model instead gives $G(\theta )=G_0(1+P_1{P}_2\cos \theta )$. The spin-valve small-field sensitivity is a chain rule,magnetic anisotropy, biasing and pinning set the rotation susceptibility. Conducting-spacer GMR usually offers low resistance and supports current-in-plane or current-perpendicular geometries. TMR uses perpendicular tunnelling, often offers a larger fractional signal and a larger resistance-area product, but demands uniform, stable barriers and has bias dependence and breakdown limits. Neither is automatically the better small-field sensor: heating, Johnson and low-frequency noise, domain switching, hysteresis and stability set the detectable field. Reverse sweep direction, vary current and temperature, and independently test reference-layer pinning to distinguish a reproducible magnetic signal from drift or heating.