A substitutional group-V atom such as phosphorus has one more valence electron than germanium and acts as a donor impurity, giving an n-type semiconductor. Approximate its outer electron by a hydrogenic donor state with screened Coulomb attraction and effective mass . The ionization energy is the positive binding-energy magnitude
Its effective Bohr radius of a hydrogenic donor is about , much larger than an atomic core, consistent with a shallow extended bound state.
At , , while the mean three-dimensional classical translational kinetic energy is . Both exceed the donor binding energy, so substantial thermal ionization is expected, unlike excitation across the much larger host band gap. A precise ionized fraction also depends on the chemical potential, dopant density and donor charge-state degeneracy; comparing two energy scales alone does not prove complete ionization at arbitrary concentration.
With the supplied fixed band gap and effective masses, the intrinsic carrier concentration is
Numerically,
For uncompensated, approximately ionized donor impurities, charge neutrality and the semiconductor mass-action law require
There is no abrupt extrinsic-to-intrinsic transition. An order-of-magnitude lower crossover density is therefore
Robust extrinsic dominance requires ; at the nominal equality, and , so intrinsic contributions are already appreciable. For a quantitative tolerance , the minimum ionized dopant density is . For example, would require at the upper temperature.
Using the nominal crossover estimate and the complete-ionization approximation at room temperature, and
For the twofold neutral-donor degeneracy, a consistency calculation gives about ionization at , raising this minority density to , about above the complete-ionization estimate. Stronger extrinsic dominance uses more donors and correspondingly fewer electron holes. Actual germanium has temperature-dependent band parameters and multiple valleys; the numerical estimate consistently uses the fixed effective data supplied rather than adding an unsupplied multiplicity.
Use the stipulated noninteracting impurity band approximation, with one donated electron per donor and two available spin states per donor orbital. The energy band is half filled. Approximating its spin-summed density of states per volume near the Fermi energy by gives the zero-temperature Pauli paramagnetism
With ,
A factor of order one depends on the density of states shape; using the conduction band -factor rather than silently setting matters here.
To locate the comparison with the magnitude of the undoped Larmor-Langevin susceptibility, put . Numerically,
For the stated atomic-scale estimate in part (b), equality with requires
Thus the dilute-branch crossover is
well below . Within this model the positive spin response exceeds the negative background magnitude for lower dopant densities on this dilute branch: the exponential narrowing of wins over the loss of donors. Indeed for . This is not a claim of ferromagnetism.
The degenerate Pauli paramagnetism calculation requires , with an unimportant order-one filling factor. At the estimated crossing,
The weak-field condition also requires . For a different assumed atomic , use in the displayed equation for . An order-of-magnitude background gives the same density order and a crossover scale of order . At higher temperature than this extremely narrow bandwidth permits, the enhancement cannot be used; the independent-donor Curie law is the appropriate thermal scale if interactions remain negligible. At very small dopant density, disorder, localization and Coulomb interactions can also invalidate the assumed noninteracting impurity band. The formal divergence as is therefore a limit of the stated zero-temperature band model, not a prediction for isolated donors at a fixed nonzero temperature.