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A negative photoresist is removed at low dose and retained at high dose. Its remaining-thickness curve rises from zero above a gel or retention threshold and approaches one above a larger full-retention threshold. A useful schematic model isThe developed profile is $t(x)/t_0=f_{-}[\tau I(x)]$. A central intensity maximum therefore leaves a central ridge, with cleared regions towards the darker sides. Halving exposure narrows and can lower the retained ridge; doubling it broadens the ridge and can raise its shoulders. A saturated central plateau cannot become thicker than the original film in this simple model. If the half-dose peak is below $D_a$, no ridge survives; if it lies between $D_a$ and $D_b$, the centre survives only partially.

The negative-resist thresholds are not supplied, so there is no unique numerical profile or linewidth. The original schematic below declares its own illustrative thresholds and intensity function; it explains the dose mapping without treating a positive-resist curve as measured negative-resist data.

Photolithography transfers a pattern defined by light into a photosensitive photoresist coating. After exposure and development, the remaining photoresist forms a relief pattern that can protect selected regions during etching or another material-transfer step.^[ref]

A photomask can place bright and dark regions in the projected optical image. A positive photoresist develops more rapidly where exposed, so sufficiently exposed regions are removed; a negative photoresist retains the exposed regions instead. The final geometry depends jointly on the optical image and the material response. In particular, diffraction limits the image delivered by the optics, while photoresist contrast determines how a gradual variation of exposure is converted into a material boundary. Photolithography therefore connects wave optics, photochemistry and semiconductor device fabrication.