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Anderson localization is the confinement of Electron wave functions, or other wave modes, by interference between repeated wave scattering paths in static disorder. A localized eigenstate occupies a limited region even in a much larger sample. Disorder can therefore suppress diffusion without absorbing the wave. In 1958, Philip Warren Anderson studied random site energies and intersite coupling, finding a regime without transport. His paper develops a theoretical model; it does not report an Anderson laboratory measurement.^[ref]

The distinction from ordinary multiple scattering is the retention of wave phases: alternative paths contribute probability amplitudes before their squared modulus is taken. Adding path probabilities alone loses the cross terms responsible for interference. This makes Anderson localization useful as a warning about transport models: repeated deflections need not produce unlimited diffusion. It also connects Electron transport with wave propagation in a random medium, although the detailed equations and experimental diagnostics differ between Electrons, light and acoustic waves.

Philip Warren Anderson's 1977 lecture distinguishes localized magnetic moments from disorder-localized states. It credits Nevill Francis Mott with recognizing the significance of the mobility edge. A Mott insulator instead requires Electron interactions and can exist without disorder.^[ref]

John Hasbrouck Van Vleck developed quantum mechanics explanations of magnetic susceptibility, including its temperature dependence; this is a distinct contribution from Anderson localization.^[ref]

Awarded in equal shares to Philip Warren Anderson, Nevill Francis Mott and John Hasbrouck Van Vleck for theoretical investigations of electronic structure in magnetic and disordered systems.^[ref]

Nevill Francis Mott's 1977 lecture discusses silicon deposited in a glow discharge. Injected Electrons provided a drift-mobility readout; electrical conductivity and temperature dependence tested localized-state transport and excitation toward a mobility edge. Varying temperature distinguishes transport regimes. The lecture gives no contact geometry or timing circuit here, so none is inferred. Its Figure 2 is schematic, not measured data.^[ref]

This evidence motivates a transport question beyond the closed-chain eigenvalue problem: how does a prepared charge disturbance move under the conditions of a real sample? The numerical figures above supply neither drift-mobility measurements nor a model of the deposition process. Finite-size concentration alone cannot reproduce an experimental electrical conductivity curve.

Finite temperature permits phonon-assisted hopping between localized eigenstates or thermal excitation toward a mobility edge; localized states therefore need not imply zero measured electrical conductivity at every nonzero temperature.^[ref]

Real dephasing destroys the relative wave phases needed for long-path interference. Observing coherent confinement requires the distance over which those wave phases survive to be long enough to explore the localized region, and the sample to be large enough to resolve it. Temperature alone is not an automatic switch: the actual inelastic processes set the relevant scales. Static elastic wave scattering preserves coherence within each realization. Loss of the ensemble-averaged coherent field through random wave phases is therefore not, by itself, physical dephasing of an individual sample.