For an intrinsic, nondegenerate semiconductor, charge neutrality and the Boltzmann approximation to the Fermi-Dirac distribution give . Assume the two polymorphs have equal effective-density-of-states prefactors and retain the quoted band gaps at the temperature being estimated. Their carrier-density ratio is thenwith expressed in eV per kelvin. At ,Both absolute intrinsic densities are extremely small at this temperature; a large ratio does not imply that either material is a good intrinsic conductor. Defects or unintended dopants can dominate real “undoped” specimens.
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