For a single impurity level in a crystal with allowed occupations zero and one and equal occupied/empty statistical weights, the Fermi-Dirac distribution gives
Since and ,
The same result follows from the two grand canonical ensemble weights and .
The equal-statistical-weight convention is necessary for the printed formula when and count whole donor impurities. More generally, donor charge-state degeneracy gives . An ordinary singly occupied donor with two spin orientations and a nondegenerate empty state has ratio ; at its occupied-to-empty ratio is two, a concrete counterexample to treating the printed expression as universal. The following part uses the paper's ratio-one convention.
Assume uncompensated donor impurities, negligible intrinsic electron holes, and a nondegenerate conduction band. Then charge neutrality equates the conduction electron number density to the ionized-donor number density:
The low-temperature condition relative to the band gap supports neglect of intrinsic carriers; one also needs and the Boltzmann approximation for the conduction electrons. Combining part (b)(i) with the effective density of states result gives
Eliminate the chemical potential by writing . With the donor binding energy ,
Writing , the physical root of the resulting quadratic equation is
This lies between zero and . At semiconductor carrier freeze-out, , it becomes ; at essentially complete ionization, , it tends to . Including donor charge-state degeneracy would replace by .

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