In a direct band gap semiconductor, the small photon momentum makes optical transitions approximately vertical in wave vector. Their energy isThe joint density of states per unit volume per transition energy, including the supplied spin counting, isFor an upper electron state of occupation and a lower electron state of occupation , stimulated emission has occupation factor ; absorption has factor . Their difference is exactly . Multiplication by the joint density of states therefore givesThe proportionality suppresses the optical transition matrix element and other smoothly varying optical prefactors. It assumes parabolic isotropic energy bands, an allowed direct transition, and negligible linewidth and many-body corrections. Here counts electrons, not electron holes.
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