Past exam of the quantum condensed matter course of the University of Cambridge / 2005 / Section B / B4 / c / Solution

A p-n junction joins p-type and n-type semiconductors. Initial carrier diffusion exposes ionized acceptors and donors, creating a depletion region and an internal electric field. At equilibrium the Fermi level is uniform and drift balances diffusion, so the built-in potential produces no net terminal current. For nondegenerate abrupt doping, its magnitude is $V_{\mathrm{bi}}=(k_{B}T/e)\ln (N_A{N}_D/n_i^2)$.

Forward bias lowers the barrier and injects minority carriers across the junction. In the ideal low-injection diffusion model, the Shockley diode equation is $I=I_s[e^{eV/(k_{B}T)}-1]$. Reverse bias broadens the depletion region and leaves a small leakage current until breakdown mechanisms become important.

The asymmetric current-voltage curve enables rectification. Illumination produces electron-hole pairs that the junction field can separate, giving a photodiode or solar cell. Forward injection and radiative recombination in a suitable direct-gap material give a light-emitting diode. Measuring dark and illuminated current-voltage curves distinguishes electrical injection from photogenerated current; an ideal junction need not have zero reverse leakage or identical behavior in every material.