Carrier density in a graphene cone ($n=\mathrm{sgn}(E_F)E_F^2/[\pi (\hslash v_F{)}^2]$)

Assume zero temperature, the linear Dirac cone, and both real-spin states and both electronic valleys. Define $n$ as excess Electron number per unit area, negative for an excess of electron holes, relative to neutrality. A filled circular region of radius $k_F$ in wave vector space containsThus the excess carrier density grows quadratically with the Fermi energy, unlike the constant density of states of a parabolic two-dimensional band. Differentiating gives the positive density of states per unit area, $D(E)=2|E|/[\pi (\hslash v_F{)}^2]$. Both the geometry of occupied states and the fourfold degeneracy matter to the coefficient.