A substitutional group-V atom such as phosphorus has one more valence electron than germanium and acts as a donor impurity, giving an n-type semiconductor. Approximate its outer electron by a hydrogenic donor state with screened Coulomb attraction and effective mass . The ionization energy is the positive binding-energy magnitude
Its effective Bohr radius of a hydrogenic donor is about , much larger than an atomic core, consistent with a shallow extended bound state.
At , , while the mean three-dimensional classical translational kinetic energy is . Both exceed the donor binding energy, so substantial thermal ionization is expected, unlike excitation across the much larger host band gap. A precise ionized fraction also depends on the chemical potential, dopant density and donor charge-state degeneracy; comparing two energy scales alone does not prove complete ionization at arbitrary concentration.

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