Integrated circuit interconnect 2026-10-18
An integrated circuit interconnect is a conducting path joining circuit regions. In Robert Noyce's patent, deposited metal strips cross retained oxide on silicon; selected openings permit contact to the semiconductor while oxide prevents unwanted contact across p-n junctions. Figs. 3–5 combine detection, filtering and electronic amplifier functions using a transistor in one structure. The key is both connectivity and insulation: a metal path must touch its intended terminals while crossing other regions without shorting them.[ref]
Semiconductor device-and-lead structure by Robert Noyce. Description of Figs. 1–5, oxide tongues, metal strips and integrated circuit; claim 1
Kilby integrated circuit demonstration 2026-10-18
In his 2000 lecture, Jack St. Clair Kilby describes an August 1958 comparison circuit made from separate silicon elements. Resistors were cut and etched; capacitors came from diffused, metallized semiconductor wafers. It tested whether semiconductor elements could perform all the required functions, but was still a discrete circuit. For the September prototype he used already diffused germanium material with contacts, cut into bars, and hand-applied wax masks to define a transistor and a distributed resistor-capacitor region. Applying supply power produced an oscillation.[ref]
Turning Potential into Realities: The Invention of the Integrated Circuit (Nobel Lecture) by Jack St. Clair Kilby. Kilby's 2000 Nobel lecture, ChemPhysChem reprint (2001), pp. 486–487, separate-element comparison and oscillator preparation
An inspected eyewitness interview describes the germanium on a microscope slide with protruding wires; changing its connections changed the oscilloscope display from a straight line to a sinusoid. This supplied a qualitative connected/disconnected comparison, not a calibrated record of amplitude, loading or repeatability.[ref]
Oral History of Jay W. Lathrop. Oral History of Jay W. Lathrop, recorded 7 May 2009, p. 11, demonstration and oscilloscope comparison
The inference was feasibility: integrated semiconductor elements could cooperate as an operating electrical circuit. The hand-wired germanium prototype did not yet supply the deposited integrated circuit interconnects of Robert Noyce's silicon design. Nor does a working prototype establish manufacturing yield or long-term reliability.
Robert Noyce Created 2026-10-18 Updated 2026-11-05
Robert Noyce devised a semiconductor device structure that integrates electrical connections with the semiconductor surface. His patent places conducting paths over an insulating layer and connects them to selected regions through openings in that layer. This makes interconnection part of fabrication rather than requiring every connection to be a separate external wire. The design connects surface insulation, device junctions and patterned conductors in the development of the integrated circuit.[ref]
Semiconductor device-and-lead structure by Robert Noyce. US2981877A, surface insulating layer, contact openings and deposited conducting leads
Portrait of Robert Noyce
. Intel Free Press; existing Commons crop by Wabbuh. CC BY-SA 2.0, via Wikimedia Commons. Source..png?width=260)