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An integrated circuit interconnect is a conducting path joining circuit regions. In Robert Noyce's patent, deposited metal strips cross retained oxide on silicon; selected openings permit contact to the semiconductor while oxide prevents unwanted contact across p-n junctions. Figs. 3–5 combine detection, filtering and electronic amplifier functions using a transistor in one structure. The key is both connectivity and insulation: a metal path must touch its intended terminals while crossing other regions without shorting them.^[ref]

In his 2000 lecture, Jack St. Clair Kilby describes an August 1958 comparison circuit made from separate silicon elements. Resistors were cut and etched; capacitors came from diffused, metallized semiconductor wafers. It tested whether semiconductor elements could perform all the required functions, but was still a discrete circuit. For the September prototype he used already diffused germanium material with contacts, cut into bars, and hand-applied wax masks to define a transistor and a distributed resistor-capacitor region. Applying supply power produced an oscillation.^[ref]

An inspected eyewitness interview describes the germanium on a microscope slide with protruding wires; changing its connections changed the oscilloscope display from a straight line to a sinusoid. This supplied a qualitative connected/disconnected comparison, not a calibrated record of amplitude, loading or repeatability.^[ref]

The inference was feasibility: integrated semiconductor elements could cooperate as an operating electrical circuit. The hand-wired germanium prototype did not yet supply the deposited integrated circuit interconnects of Robert Noyce's silicon design. Nor does a working prototype establish manufacturing yield or long-term reliability.