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Institutional fabrication tutorial. The surface micromachining section describes sacrificial support, oxide/polysilicon release, HF selectivity and capillary stiction. No separate publication date is established.

Minimum incremental motion is the smallest displacement increment that a positioning system can execute repeatedly for the specified input and test conditions. It is an operational motion property, whereas design resolution is derived from the drive geometry and electronic increments. Friction, stiction, elasticity and backlash can make them differ.^[ref]

For an original illustrative test, independently measure the displacement produced by repeated commands from equivalent starting conditions. A nominal 10 nm command gives moves $0,20,0,20\mathrm{nm}$. Their mean is 10 nm, but that mean does not show repeatable 10 nm increments. A nominal 40 nm command instead gives $39,41,40,40\mathrm{nm}$.

Define an example acceptance rule before testing: every measured move must lie within 5 nm of the command, and the readout must have sufficiently smaller uncertainty, stipulated here as 1 nm standard uncertainty. The 10 nm trials fail this rule; the 40 nm trials pass. Among these two candidate increments, 40 nm is the smallest accepted one. It is not a proof of the globally smallest achievable increment because intermediate candidates and other conditions were not tested.

Report the command convention, load, motion direction, starting procedure, displacement sensor, measurement uncertainty and acceptance rule. A rotary encoder on the motor does not automatically measure the final load motion. Independent readout, for example with an interferometer, tests the assembled stage rather than only the commanded count. Positioning repeatability at a target and the ability to make a small move are related but distinct properties.

A sacrificial layer temporarily supports the intended moving structure and determines its clearance above the substrate. One workable surface micromachining sequence deposits silicon dioxide on silicon, opens anchor windows in that oxide, deposits a structural polysilicon film and patterns the beam and release openings. The structural film contacts the substrate at the anchors. Selective removal of the oxide beneath the beam leaves the beam suspended while retaining its attachment. An access opening or exposed perimeter is essential; an etchant cannot instantly reach sealed material.

The release needs substantial lateral removal, so an isotropic etch with high etch selectivity is useful. Hydrofluoric-acid oxide release is compatible with a suitable polysilicon structure; a directional reactive-ion etching step alone would mainly clear exposed vertical paths and leave material beneath the beam. Choose the structural material, anchor design, sacrificial material and etchant together, and allow for transport-limited undercut and structural residual stress. Wet release followed by ordinary evaporation can pull a compliant structure onto the substrate through capillary force and cause stiction. critical point drying or a compatible vapor-phase release etch avoids the receding liquid interface. Neither method removes the need to check residues, selectivity and anchor survival. Pattern the support and structure first, then selectively undercut the support while preserving the anchors.^[ref]

Unwanted sticking that prevents intended relative motion. In surface micromachining, a receding liquid meniscus can pull a compliant released beam onto the substrate; adhesion can then keep it there. Avoiding a liquid-vapor drying interface addresses one route to stiction, but does not remove contact adhesion during use.

Fabrication of small structures from deposited, patterned surface films. A structural layer can be built on a sacrificial layer and released by selective removal of that support while retaining anchors. Film thickness sets a vertical dimension; residual stress, access to the sacrificial material and release-induced stiction require separate control.

Selective removal of a sacrificial layer using gaseous reactants rather than a bulk liquid bath. A compatible vapor-phase oxide etch can avoid the liquid drying step responsible for one form of stiction. Selectivity, byproducts, humidity and access to the undercut region still matter.