Blue light-emitting diode 2026-10-18
Blue transitions motivate wide-bandgap semiconductors, but a large band gap alone cannot guarantee efficient emission. Gallium nitride has a direct band gap; indium gallium nitride composition tunes the transition energy.[ref]
For an emitted photon, with frequency and vacuum wavelength ,
where is the Planck constant and the vacuum speed of light. Multiplying energy by wavelength gives . Thus chosen wavelengths and correspond to and : blue requires more energy per photon than red. A stipulated transition energy instead gives , in the ultraviolet. These are conversions, not measured emission lines.
For near-edge emission, estimates the photon energy from the emitting material's band gap. Quantum well confinement or impurity transitions can change it. The 1994 blue light-emitting diode used zinc-doped indium gallium nitride, emitting below its near-edge transition.[ref]
The measured forward terminal electric potential difference is also not fixed by , where is the elementary charge. It depends on electric current, temperature, contacts and series electrical resistance. Even the simple Shockley diode equation with series electrical resistance has , whereas an optical transition does not acquire an extra energy merely because the contact drop increases. Consequently, extracting a band gap from one terminal-voltage reading is not justified.
Light-emitting diode 2026-10-18
The optical and electrical questions are different: photon energy sets a color scale, while light-emitting diode efficiency determines how much supplied energy escapes as light. The blue light-emitting diode made compact white light-emitting diodes and full-color displays practical. A modulated light-emitting diode can also supply the optical signal in a chopped-light lock-in experiment.
Figure 1.
Blue light-emitting diode: carrier injection, emitting structure and optical readout
. Original functional schematic of a representative indium gallium nitride quantum well device on sapphire, not a reconstruction of the 1989 or 1994 devices. Layer thicknesses are schematic. Separate electrical and optical readings determine different properties: terminal electric potential difference and electric current, spectrum, and calibrated escaping optical power. The arrows represent routes through the device rather than a calculated energy band profile. Source. Details.