Blue light-emitting diode 2026-10-18
Blue transitions motivate wide-bandgap semiconductors, but a large band gap alone cannot guarantee efficient emission. Gallium nitride has a direct band gap; indium gallium nitride composition tunes the transition energy.[ref]
https://www.kapitza.ras.ru/~glazkov/students/Nobel-akasaki-lecture.pdf. §2, printed pp. 8–10: direct/indirect gaps and nitride composition range
For an emitted photon, with frequency and vacuum wavelength ,where is the Planck constant and the vacuum speed of light. Multiplying energy by wavelength gives . Thus chosen wavelengths and correspond to and : blue requires more energy per photon than red. A stipulated transition energy instead gives , in the ultraviolet. These are conversions, not measured emission lines.
For near-edge emission, estimates the photon energy from the emitting material's band gap. Quantum well confinement or impurity transitions can change it. The 1994 blue light-emitting diode used zinc-doped indium gallium nitride, emitting below its near-edge transition.[ref]
Candela-class high-brightness InGaN⁄AlGaN double-heterostructure blue-light-emitting diodes by Shuji Nakamura and others. p. 1688, Fig. 2 discussion: Zn-related emission
The measured forward terminal electric potential difference is also not fixed by , where is the elementary charge. It depends on electric current, temperature, contacts and series electrical resistance. Even the simple Shockley diode equation with series electrical resistance has , whereas an optical transition does not acquire an extra energy merely because the contact drop increases. Consequently, extracting a band gap from one terminal-voltage reading is not justified.
Light-emitting diode 2026-10-18
A light-emitting diode is a semiconductor diode producing electroluminescence under electric current. Forward bias injects Electrons and electron holes; radiative electron-hole recombination emits photons. A double heterostructure uses band offsets to retain both charge carriers in an active layer. A sufficiently thin layer is a quantum well.[ref]
https://journals.aps.org/rmp/pdf/10.1103/RevModPhys.87.1139. §I, p. 1139, Fig. 1; §IV.A, pp. 1143–1144: injection, active layer and quantum-well distinction
The optical and electrical questions are different: photon energy sets a color scale, while light-emitting diode efficiency determines how much supplied energy escapes as light. The blue light-emitting diode made compact white light-emitting diodes and full-color displays practical. A modulated light-emitting diode can also supply the optical signal in a chopped-light lock-in experiment.
Blue light-emitting diode: carrier injection, emitting structure and optical readout
. Original functional schematic of a representative indium gallium nitride quantum well device on sapphire, not a reconstruction of the 1989 or 1994 devices. Layer thicknesses are schematic. Separate electrical and optical readings determine different properties: terminal electric potential difference and electric current, spectrum, and calibrated escaping optical power. The arrows represent routes through the device rather than a calculated energy band profile. Source. Details.