Past exam of the physics A course of the University of Cambridge / 2014 / Paper 2 / Section D / D13

Donor doping supplies conduction electrons to n-type semiconductor; acceptor doping supplies holes to p-type semiconductor. In the nondegenerate, fully ionized limit, majority densities are approximately $n_n=N_D$ and $p_p=N_A$, while minority densities follow $np=n_i^2$. On contact, majority carriers diffuse across the junction, exposing positive donor ions on the n side and negative acceptor ions on the p side. The depletion-region electric field points from n to p and opposes further diffusion. At thermal equilibrium the Fermi level is uniform and drift balances diffusion, with no net current.

For an abrupt junction with uniform doping and permittivity ${\epsilon }_s$, charge neutrality gives $N_D{x}_n=N_A{x}_p$. Poisson's equation then givesPositive applied $V$ means forward bias: it lowers the barrier and narrows the depletion region. Most depletion width lies in the more lightly doped side. The formula assumes the depletion approximation and fails once its operating assumptions break down.

forward bias increases minority densities at the depletion edges by the factor $e^{qV/k_{B}T}$. In the neutral material, the steady diffusion–recombination equation gives exponentially decaying excess minorities, with lengths $L_n=\sqrt{D_n{\tau }_n}$ and $L_p=\sqrt{D_p{\tau }_p}$. Taking the carrier gradients at the junction yieldsThis ideal diode law assumes low injection, nondegenerate statistics, negligible depletion-region recombination and series resistance, and sufficiently long neutral regions. Its exponential comes from the bias-dependent injection barrier; there is no universal abrupt “turn-on” voltage. reverse bias suppresses injection, giving an approximate $-I_S$ current until additional leakage or breakdown matters.^[ref]

Rectification uses the asymmetric current-voltage characteristic; controlled reverse breakdown enables voltage references, with current limiting. Bias-dependent depletion capacitance enables varactors. photodiodes and solar cells collect optically generated carriers through the junction field and diffusion toward it; efficient light-emitting diodes use radiative electron–hole recombination, preferably in a direct-gap material. Series resistance, high injection, trap-assisted recombination, heating and finite carrier storage explain departures from the ideal steady-state law.