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Directional plasma etching used for deep, high-aspect-ratio features. Alternating fluorine-based silicon etching and sidewall passivation is one implementation; transport, mask erosion, charging, scallops and aspect-ratio-dependent etch rate constrain the achievable structure.

Treat the letter-shaped regions as openings to be etched, using positive-tone resist; the clear mask areas therefore correspond to those openings. Label the two L features $L_1,L_2$ from left to right. An alternating assignment is mask A: H, $L_1$, O; mask B: E, $L_2$. Each full letter remains on one mask, avoiding unnecessary stitch boundaries across its stems. Nearest-neighbor interletter gaps now occur between different exposures, rather than having to be resolved within one exposure. Verify that each individual letter's internal spaces are still printable; without dimensions, this partition is a process proposal rather than proof of a particular numerical minimum linewidth.

A robust sequence is litho-etch-litho-etch double patterning into a durable hard mask. Deposit an oxide hard mask on silicon; expose and develop mask A and transfer those openings through the hard mask. Strip resist, apply fresh resist, align and expose mask B, then transfer its openings into the same hard mask, the second resist covering mask-A openings during that second oxide transfer. Remove resist and perform one final deep silicon etch through the union of the openings. An inductively coupled deep reactive-ion etching process with alternating fluorine etching and sidewall passivation gives much more vertical, high-aspect-ratio features than an isotropic etch. Mask thickness and etch selectivity must survive the required depth. Control sidewall scalloping, aspect-ratio-dependent etch rate, charging, microloading and the combined overlay/etch-bias budget.

A spacer-based process can produce very fine regular pitches, but arbitrary letter junctions and terminations require additional cut/block patterning; it is not automatically a two-mask solution for this target. Use two independently transferred sparse masks, then a selective directional deep etch. The schematic gives the assignment and a generic corner-correction example without reproducing the supplied pattern.

Photolithography transfers a pattern defined by light into a photosensitive photoresist coating. After exposure and development, the remaining photoresist forms a relief pattern that can protect selected regions during etching or another material-transfer step.^[ref]

A photomask can place bright and dark regions in the projected optical image. A positive photoresist develops more rapidly where exposed, so sufficiently exposed regions are removed; a negative photoresist retains the exposed regions instead. The final geometry depends jointly on the optical image and the material response. In particular, diffraction limits the image delivered by the optics, while photoresist contrast determines how a gradual variation of exposure is converted into a material boundary. Photolithography therefore connects wave optics, photochemistry and semiconductor device fabrication.

Semiconductor device fabrication builds electronic or optoelectronic structures by controlling the geometry, composition and interfaces of semiconductor materials. Typical steps include deposition, photolithography, etching and controlled semiconductor doping. Repeating patterned steps creates devices and their interconnections.

For a simple patterned layer, deposit material, coat it with photoresist, expose through a photomask, develop the resist and transfer the pattern by etching. Later layers require alignment to earlier ones. A useful device depends on more than resolving a small feature: defects, contamination, interface quality and electrical contact resistance also affect performance. Fabrication therefore couples materials science with measurement and process control.^[ref]