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Oxygen-plasma ashing, preferably a remote or downstream arrangement when low damage matters, removes organic photoresist chemically. Feed oxygen through a plasma source energized by radiofrequency or microwave power. Electron-impact dissociation generates reactive oxygen species; neutral radicals reach the wafer in a separate downstream region. Keep the wafer off a strongly biased driven electrode so energetic ion bombardment is much smaller than in directional reactive-ion etching. A barrel asher with shielded wafers is another chemical-stripping implementation.These equations represent radical production and an ideal complete-oxidation balance; actual exhaust can also contain CO and fragments. Pumping removes volatile products. Directional shape fidelity is unnecessary for blanket stripping, while access around surface relief and high chemical removal selectivity are useful. Monitor endpoint and wafer temperature, and verify removal with a witness surface. oxygen can oxidize exposed materials, charging can still damage sensitive structures, and inorganic or metal-containing residues may require a compatible separate clean. Ashing removes organic contamination; it is not a universal residue-removal step.^[ref]

A sacrificial layer temporarily supports the intended moving structure and determines its clearance above the substrate. One workable surface micromachining sequence deposits silicon dioxide on silicon, opens anchor windows in that oxide, deposits a structural polysilicon film and patterns the beam and release openings. The structural film contacts the substrate at the anchors. Selective removal of the oxide beneath the beam leaves the beam suspended while retaining its attachment. An access opening or exposed perimeter is essential; an etchant cannot instantly reach sealed material.

The release needs substantial lateral removal, so an isotropic etch with high etch selectivity is useful. Hydrofluoric-acid oxide release is compatible with a suitable polysilicon structure; a directional reactive-ion etching step alone would mainly clear exposed vertical paths and leave material beneath the beam. Choose the structural material, anchor design, sacrificial material and etchant together, and allow for transport-limited undercut and structural residual stress. Wet release followed by ordinary evaporation can pull a compliant structure onto the substrate through capillary force and cause stiction. critical point drying or a compatible vapor-phase release etch avoids the receding liquid interface. Neither method removes the need to check residues, selectivity and anchor survival. Pattern the support and structure first, then selectively undercut the support while preserving the anchors.^[ref]

Use optical photolithography for the two masks and a resist profile compatible with the selected process. A controlled wet mesa etch or a calibrated reactive-ion etching process must pass completely through the p–n interface, with limited sidewall damage. Use profilometry or cross-section controls to verify depth and a test device to check leakage. For the front lift-off process, directional evaporation and an undercut resist profile discourage a continuous metal fence bridging the mask sidewall.

The cap-removal step requires a separately qualified selective etchant: its selectivity between gallium arsenide and the particular aluminium gallium arsenide alloy depends on alloy composition, chemistry and processing conditions. Establish etch rate and endpoint on a witness stack; a universal etch time cannot be inferred from a diagram without thicknesses. The front metal must resist that etchant. Back metallization and activation must establish an ohmic contact rather than an unintended rectifying junction. Verify specific contact resistance on test structures and avoid an anneal that degrades the p–n profile. The final dielectric can be deposited by a low-damage evaporation or other compatible thin-film method.

Use a patterned resist or hard mask and anisotropic chlorine-based reactive-ion etching, for example an appropriate $\mathrm{C}{\mathrm{l}}_2/BC{\mathrm{l}}_3$ inductively coupled plasma process for GaAs/AlGaAs. Ion-assisted removal gives a well-defined mesa with less lateral undercut than an isotropic wet etch. Control etch time or endpoint to obtain the specified approximately $1.2\mu \mathrm{m}$ depth.

The mask must survive the etch and protect the active aperture. Control ion damage and sidewall roughness, remove residues and passivate the sidewall where required. Compatibility with the metal stack determines whether the mesa is etched before or after front-contact deposition.

MIT 6.774, Fall 2004, institutional lecture transcript. The discussion distinguishes largely chemical photoresist ashing in barrel/plasma systems from more strongly directional reactive-ion etching. The source is a teaching lecture, not an experimental paper.