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A modulation-doped GaAs-AlGaAs electron gas is confined on the GaAs side of the interface. The larger-gap AlGaAs supplies a conduction-band barrier; charge transfer from remote donors and the resulting electric field bend the bands into an approximately triangular well. transverse electronic mode wavefunctions are confined normal to the interface but free in its plane. electrons settle into the well until their electrochemical potential agrees with the donor/contact environment. An undoped spacer separates mobile electrons from ionized donors, reducing impurity scattering. Equilibrium has one Fermi level across the structure; the conduction-band edge is not flat. Surface depletion and the cap also affect the profile. The original drawing illustrates one occupied confinement transverse electronic mode; a single spatial electron gas need not in general imply only one occupied vertical transverse electronic mode.

molecular beam epitaxy can grow a clean GaAs buffer/channel, an undoped AlGaAs spacer, a Si-doped AlGaAs supply region and a protective GaAs cap on a suitable substrate. Control composition, interface quality and background impurities during growth; placing dopants directly in the channel defeats the principal mobility advantage. Define a mesa or isolation region, fabricate low-resistance ohmic contacts to the buried gas, and pattern fine metal split gates by electron beam lithography and the lift-off process. Negative gate bias depletes the underlying gas, leaving a narrow channel between the gates. Check contact resistance, leakage, carrier density and mobility; operation with ballistic electron transport requires channel length shorter than the relevant scattering lengths and smooth confinement on the wavelength scale. The lithographic gap does not equal the electrical width because of lateral depletion.

For a long uniform channel supporting ballistic electron transport, transverse confinement creates thresholds $E_n$ with continuous longitudinal propagation above each threshold. One directed spin branch of a transverse electronic mode has states per length $dk/(2\pi )$ and group velocity $v={\hslash }^{-1}dE/dk$. Hence $vdk/(2\pi )=dE/h$: velocity cancels the one-dimensional density of states. Including two unresolved spin states,For low temperature and small bias, a fully open transverse electronic mode has $T_n(E_F)=1$, givingThe assumptions are ideal reservoirs/contacts, negligible reflection and interactions that would invalidate the independent-subband description, and unresolved spin splitting. A resolved spin branch contributes $e^2/h$. The finite two-terminal electrical resistance is a contact/mode-injection effect, despite the absence of dissipative scattering inside the ideal channel.

For voltage partition in a ballistic constriction, a short saddle has strong local electric-field and electrostatic screening variation near its entrances and barrier, rather than the uniform Ohmic voltage gradient of a diffusive wire. Right-moving incident states inherit the source distribution and left-moving states the drain distribution; there is no unique local equilibrium chemical potential inside an ideal ballistic saddle. The electrostatic potential must be determined self-consistently. In a symmetric rigid-barrier approximation, the barrier follows the mean lead potential and half the electrochemical bias lies on each side. This is a stated approximation, not a universal spatial voltage profile.

For a saddle $U=U_0-m^{\ast }{\omega }_x^2{x}^2/2+m^{\ast }{\omega }_y^2{y}^2/2$, transverse electronic mode thresholds are $E_n=U_0+\hslash {\omega }_y(n+1/2)$. The smooth-barrier transmission is $T_n(E)=[1+\exp (-2\pi (E-E_n)/(\hslash {\omega }_x)){]}^{-1}$, approaching a step for a sharp threshold on the bias/thermal scale.^[ref]

Let ${\mu }_{S,D}=E_F\pm eV/2$ and assume no additional bias dependence of $T_n$. At zero temperature,When the source and drain sample $N+1$ and $N$ thresholds, the differential electrical conductance is $(N+1/2)2e^2/h$. These half plateaus arise from the two ends of the bias window, not fractional carriers. The dc ratio $I/V$ need not share their plateau values. Heating, spin splitting and interaction-induced features must be distinguished experimentally.

In bias spectroscopy of one-dimensional subbands, plot differential electrical conductance or its gate derivative against gate bias and source-drain bias. Threshold branches occur where $E_n(V_g)={\mu }_S$ or ${\mu }_D$. When one bias-window edge meets $E_n$ and the other $E_{n+1}$,Thus the intersections of adjacent threshold branches calibrate the one-dimensional spacing directly in energy. A gate lever arm $\alpha =-e^{-1}\partial E_n/\partial V_g$ can then convert gate intervals to energy; it should be measured rather than guessed. Asymmetric bias partition, a moving barrier or a gate-dependent spacing modifies slopes and plateau weights, requiring the corresponding self-consistent bias model.

A trajectory-resolving ballistic experiment. Use a high-mobility modulation-doped GaAs-AlGaAs heterostructure with a two-dimensional electron gas. Grow the layers by molecular-beam epitaxy, separate the donor layer from the conducting interface with an undoped spacer, and pattern an isolated mesa with ohmic reservoir contacts. Electron-beam lithography defines metal split gates; negative gate voltage depletes the underlying electron gas, leaving narrow adjustable injector and collector quantum point contacts along an edge. Keep the relevant path shorter than the momentum-relaxation mean free path, cool to suppress phonon scattering and thermal smearing, and use a small excitation to avoid heating.

Inject a low-frequency current through one contact to a distant drain and measure the collector's open-circuit voltage with a high-input-impedance amplifier. Sweep perpendicular magnetic field and gate settings. The cyclotron radius is $r_c=\hslash k_F/(e|B|)$, with $k_F=\sqrt{2\pi n_s}$ for a spin-degenerate single-valley gas. For contact separation $L$, semicircular or skipping trajectories focus into the collector whenThe appropriate field sign bends carriers toward the collector; the opposite sign suppresses the peaks. Density-dependent focusing positions, suppression with increased scattering and reproducible gate control distinguish directional ballistic propagation from an ordinary diffusive voltage. Quantum interference may add fine structure, but the basic focusing signal does not require phase coherence over every path. Split-gate injection and collection in a two-dimensional gas were directly demonstrated in the original focusing experiment.^[ref]

Multi-probe current bookkeeping. For one directed spin-resolved mode, velocity times one-dimensional density of states gives a particle flux $dE/h$. A small reservoir electrochemical-energy shift ${\mu }_j$ therefore supplies excess flux ${\mu }_j/h$. Let $N_i$ be the number of propagating modes at lead $i$, $R_{ii}$ their summed return probability, and $T_{ij}$ the total transmission from reservoir $j$ into lead $i$. Multiplying outgoing-minus-incoming electron flux by charge $-e$ gives the source's convention,The reservoirs equilibrate arriving carriers; an ideal voltage probe adjusts its chemical potential until its net current vanishes. Here ${\mu }_i$ is an energy, not a voltage. Choose the lead-voltage convention ${\mu }_i=-e{V}_i$ and positive conventional current injected into the junction. The working equation is thenConservation of scattering probability and gauge invariance require both column and row balance: every outgoing channel is accounted for and equal voltages give zero current. The counts $M,N$ below include every occupied internal channel; an extra factor of two must not be inserted if spin is already counted. If one instead counts orbital channels with unresolved spin degeneracy, double all transmission counts consistently.

Zero-field routing. The original diagram labels lead 1 at the left, 2 above, 3 at the right and 4 below. With columns denoting injectors and rows collectors, straight-through ballistic routing and the stipulated excess-wide-channel rule giveThere is no reflection in this ideal routing model. Set $V_4=0$, $I_2=I_3=0$, and $I_1=I=-I_4$. The two probe equations giveThusThe derivation assumes $N>M>0$. At $N=M$, the ideal network splits into two disconnected opposite-lead pairs and cannot carry the imposed 1-to-4 current at finite voltage; the divergence diagnoses failure of that limiting transport configuration, not an infinite dissipative resistance of each channel. Negative bend resistance is a nonlocal voltage sign, compatible with positive total dissipated power.

Positive field. At $+B_0$, left-deflected incoming carriers go $1\to 2$, $2\to 3$, $3\to 4$. Lead 4 supplies $M$ modes to narrow lead 1; the remaining $N-M$ enter wide lead 3. The balanced transmission matrix isTherefore $V_2=V_1$, $V_3=M{V}_1/N$ and $I=g_{0}M{V}_1$, givingNegative field. Reversing the chirality gives ${\mathsf{T}}_{-}={\mathsf{T}}_{+}^{\mathsf{T}}$, as expected from reciprocity for this spin-independent routing model. With $V_4=0$, the zero-current conditions become $V_3=V_4=0$ and $V_2=V_3=0$. ThusThis does not contradict reciprocity: the general relation interchanges the current and voltage lead pairs when reversing field; it does not require the same fixed-contact four-terminal resistance to be even in $B$.

Comparison with the measured trace. The PDF shows a negative region around zero field, approximately zero signal at sufficiently negative field, and a positive rising resistance near $+0.4\mathrm{T}$ and above. These signs match the three routing limits. Near zero field the depth is roughly a few tenths of a kilohm; the graph does not supply $M,N$, so there is no justified exact amplitude fit. Rounded corners, collimation and finite cyclotron radius continuously change which outgoing lead is reached between the ideal limits. Skipping trajectories and geometrical focusing can produce shoulders or resonances. At larger positive fields magnetic depopulation and spin resolution can change the mode counts, increasing the positive resistance or producing structure; disorder, incomplete equilibration and finite temperature round ideal features. These are candidate mechanisms, not uniquely established assignments of every small feature from one trace.

Use two collinear quantum point contacts in a clean two-dimensional electron gas. Surface split gates deplete the electron gas beneath them, leaving two short constrictions facing one another across an open region. The first injects a directional beam from a biased reservoir; the second collects carriers into a downstream reservoir, with electric current flowing in the same spatial direction through both constrictions. Additional surrounding contacts can absorb carriers that miss the collector. A direct collector signal at zero magnetic field, sensitive to alignment and to obstruction of the intervening path, demonstrates ballistic electron transport across the separation.

An illustrative GaAs device uses gate gaps of a few hundred nanometres and electrically tunable constriction widths of tens to a few hundred nanometres, with injector–collector separation of a few micrometres. These are typical design scales, not dimensions supplied for a particular chip in the question. The electrical width can be much smaller than the lithographic gap because depletion extends laterally. A one-mode opening has width comparable to roughly half a Fermi wavelength; it is not simply any opening below one micrometre. Low-temperature operation suppresses inelastic scattering and resolves transverse modes. The direct trajectory length should be comfortably below the relevant transport mean free path.

Collimation is provided by the smooth exit from a constriction. In adiabatic electron collimation, transverse mode action is approximately conserved, giving $p_{\perp }W\simeq \mathrm{constant}$. As the channel opens from width $W_0$ to $W_{\mathrm{out}}$, $p_{\perp ,\mathrm{out}}\simeq p_{\perp ,0}{W}_0/W_{\mathrm{out}}$. At the same time the bottom of the electrostatic potential falls, increasing longitudinal kinetic energy. Thusand the angular distribution narrows. The reciprocal collector selects this forward-directed set of trajectories. A narrow abrupt aperture by itself may diffract into a broad fan; the smooth funnel and its potential profile are important. Here “focusing” refers primarily to collimation and efficient injector–collector coupling, not a claim that every emitted trajectory converges to one exact geometric point.

In scanning gate microscopy, a conducting tip biased sufficiently negatively creates a local repulsive potential and, when strong enough, a small depleted region in the electron gas beneath it. Raster the tip and record the collector current or differential conductance. Placing the perturbation on a strongly contributing path deflects or backscatters electrons and changes collection, producing spatial contrast. A primary scanning-probe experiment records conductance changes as a negatively charged tip depletes and backscatters the two-dimensional gas.^[ref]

The resulting image is a map of transport sensitivity to the tip, not a literal nonperturbing photograph of an electron trajectory. Broad electrostatic gating of either constriction should be distinguished from local beam disruption. Weak smooth disorder can create branches even in a high-mobility sample. Where electron phase coherence is preserved, interference between alternative paths can add fringes, often with a scale comparable to half a Fermi wavelength for a round-trip path-length change. Ballistic motion and phase-coherent interference are related but distinct requirements.

A small perpendicular magnetic field curves the imaged paths through the Lorentz force, $\mathbf{F}=-e\mathbf{v}\times \mathbf{B}$. Reversing $B$ reverses the bending, and a fixed aligned collector generally loses the initially straight beam unless a curved path connects it. For a circular orbit at the Fermi velocity,For one valley with two nearly equally occupied spin species at small field, state counting in the Fermi disc gives $n_s=2\pi k_F^2/(2\pi {)}^2=k_F^2/(2\pi )$. HenceSpin polarization or extra valley degeneracy changes the density-to-wavevector relation; the stated low-field GaAs estimate uses the ordinary spin-degenerate case.

The electron mobility gives the momentum relaxation time in a parabolic-band Drude model, $\mu =e{\tau }_{\mathrm{tr}}/m^{\ast }$. ThereforeThe effective mass cancels from both ${\ell }_{\mathrm{tr}}$ and $r_c$ when expressed in terms of density and mobility. For the supplied density,With $m^{\ast }=0.067m_0$, $m_0\simeq 9.1093837139\times 10^{-31}\mathrm{kg}$, one also obtains $v_F\simeq 1.937\times 10^5\mathrm{m}{\mathrm{s}}^{-1}$ and ${\tau }_{\mathrm{tr}}\simeq 38.1\mathrm{ps}$. The requested lengths areA useful independent ratio is ${\ell }_{\mathrm{tr}}/r_c=\mu |B|=3$. The standard constants used here are explicitly tabulated, rather than inferred from the sample.^[ref]

Mobility measures momentum relaxation. Predominantly small-angle elastic scattering can occur more frequently than that transport time, and the phase-coherence time is different again. Thus the calculation supports a several-micrometre transport scale, without proving that every electron experiences literally no perturbation over that distance.

As temperature rises, the directed ballistic collector signal decreases. Increased electron-phonon scattering and other inelastic processes reduce survival of the directed beam; thermal averaging broadens the mode and angular selection, and interference contrast also diminishes. A diffuse background current can remain, so disappearance of beam contrast need not mean all current through the device vanishes.

A quantum point contact is made by using negative surface split gates to leave a short narrow channel in a clean two-dimensional electron gas. Its length should be smaller than the transport mean free path; transverse confinement should be strong enough that subband spacing exceeds thermal and lifetime broadening. Low-resistance Ohmic contacts connect large reservoirs. Apply a small source–drain bias, measure current and differential conductance, and sweep the gate to change the channel width or barrier height. Contact and wiring series resistance must be accounted for when comparing plateau values.

The Landauer formula explains the conductance without treating the short channel as a diffusive wire. For each propagating one-dimensional mode, the density of states and group velocity cancel in the incident flux, leaving $e/h$ per spin per energy interval. The reservoir occupation difference supplies the net current:The factor two assumes unresolved spin degeneracy. In zero-temperature linear response,A well-transmitted channel has $T_n\simeq 1$, giving steps $G=N(2e^2/h)$ as modes open. A finite two-terminal resistance persists even for a perfectly ballistic channel because reservoirs inject only a finite number of modes; it is not evidence of resistive scattering inside the channel. Gate-controlled point-contact conductance quantization was demonstrated in a two-dimensional electron gas.^[ref]

The saddle-point model of a quantum point contact resolves how modes open. Near the bottleneck, choose the channel direction as $x$ and writeTransverse harmonic confinement gives barrier tops $E_n=U_0+\hslash {\omega }_y(n+1/2)$. Scattering through the inverted longitudinal harmonic barrier givesSmall longitudinal curvature makes a sharp transmission threshold compared with the transverse subband spacing; finite curvature rounds each conductance step. This is the explicit smooth-barrier model developed for a saddle constriction.^[ref]

At larger source–drain bias, the current samples a finite energy window. For a rigid transmission spectrum at zero temperature,With symmetric bias, ${\mu }_{S,D}=E_F\pm eV/2$, the nonlinear conductance of a quantum point contact isIf both window edges sample $N$ open modes, the usual plateau remains. If one edge samples $N+1$ and the other $N$, differential conductance approaches $(N+1/2)(2e^2/h)$: a half-integer plateau relative to the zero-bias step. It is a bias-window effect, not half an electron spin degeneracy. Ridges in gate–bias transconductance occur when a reservoir chemical potential crosses a subband threshold; their separations can measure subband energies.

The half-plateau expression assumes symmetric bias and an approximately bias-independent barrier. An asymmetric voltage drop or self-consistent shift of $U_0$ changes the numerical relation. At still larger biases, heating and inelastic scattering can invalidate a rigid elastic saddle model. Thus the zero-bias quantization counts transmitted modes, while nonlinear spectroscopy compares mode counts at the two ends of the bias window.