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Separate geometry from electronic response in an original one-dimensional toy tunnel junction. Write the geometric surface height as $h(x)$, tip height as $z(x)$, and positive gap as $s(x)=z(x)-h(x)$. Assume low fixed tip-sample electric potential difference: the sampled energy window is narrow enough that the tip density of states is featureless and the sample local density of states varies little across that window. Neglect thermal broadening, changes of tip shape and lateral averaging. Let $\rho (x)>0$ be the effective sample local density of states divided by a positive reference value, so it is dimensionless. Choose a spatially constant effective barrier energy $\Phi >0$, a positive coefficient $C$ with units of electric current, andHere $m_e$ is the Electron mass, $\hslash$ the reduced Planck constant, and $\kappa$ the tunnelling decay constant. This is an illustrative low-bias model, not a universal calibration formula. At fixed $I=I_0>0$, taking a logarithm givesThe logarithms have dimensionless arguments. Only constant $\rho$ makes the recorded height differ from geometric height by a constant. Multiplying $\rho$ by $r>0$ raises the apparent height by $\ln r/(2\kappa )$ without moving the geometric surface.

For a concrete ambiguity, choose $\kappa =10{\mathrm{nm}}^{-1}$, $a=0.020\mathrm{nm}$, lateral period $L=1\mathrm{nm}$, $s_0=0.50\mathrm{nm}$, and $q(x)=\cos (2\pi x/L)$. CompareBoth produce exactly $z(x)=s_0+aq(x)$ at $I_0=C{e}^{-2\kappa s_0}=C{e}^{-10}$. Substitution checks this without identifying $\rho$ with geometric height: case A has constant gap $s_0$, while case B has gap $s_0+aq(x)$ and a compensating electronic factor. The chosen ${\rho }_B$ ranges from $e^{-0.4}$ to $e^{0.4}$, approximately $0.6703$ to $1.4918$; every gap remains positive. The chosen $\kappa$ corresponds to $\Phi \simeq 3.81$ electronvolts, a positive effective barrier.

At fixed tip height $z_f=s_0$, both cases instead giveTheir maximum-to-minimum electric current ratio is $e^{0.8}\simeq 2.226$. Thus even adding this fixed-height scan at the same electric potential difference cannot distinguish these deliberately chosen surfaces within the toy model. Independent structural information or additional electronic measurements are required. Changing electric potential difference can supply such information, but also changes the assumptions used to define $C$ and $\rho$.

The local density of states resolves the density of states by position as well as energy. With a consistent counting of spin states, its integral over the specimen's volume gives the total density of states, $g(E)=\int \rho (\mathbf{r},E)d^3\mathbf{r}$. It describes the spatial distribution of available states, rather than their occupation.

Scanning tunneling microscopy uses a scanning tunneling microscope to map a surface from the electric current across a tunnel junction. In constant-current operation, feedback control adjusts the tip height to maintain a chosen electric current. The current-distance test of vacuum tunnelling explains the underlying distance sensitivity and its measurement limits.

The image records the response of a tunnel junction, rather than photographing chemical atoms. Its apparent height can reveal both surface structure and the local density of states; distinguishing them is part of interpreting the measurement.^[ref]