For gold (110), the 1982 paper compared an untreated surface with one prepared by argon sputtering and annealing. Repeated cleaning reproduced the corrugation; the gap-modulation signal checked work function variation. This supported a structural interpretation while exposing the danger of confusing work function contrast with geometric relief.[ref]
Surface Studies by Scanning Tunneling Microscopy by Gerd Binnig and others. p. 59, Au preparation, repeated cleaning and modulated signal
The authored lecture describes resolving the surface reconstruction on gold (110), alongside ribbons of other periodicities. It also reports gold transfer to the tip on contact and fluctuating resolution, attributed tentatively to migrating tip chemical atoms. The probe could change during observation: an image was evidence requiring controls, not an unambiguous map of atomic positions.[ref]
Scanning Tunneling Microscopy: From Birth to Adolescence by Gerd Binnig and others. pp. 398–399, Au(110) reconstruction, tip coating and changing resolution
Ion milling 2026-10-20
Removal of material by bombardment with energetic ions. Directional sputtering can transfer a mask pattern with less undercut than an isotropic wet etch; mask erosion, redeposition and surface damage remain possible.
Expect appreciable but nonuniform sidewall coverage, rounded upper edges and possible narrowing near the opening mouth. In sputtering, gas collisions and the extended source distribute arriving material over a broader range of directions than simple high-vacuum evaporation. At the specified pressure, the extent of that redistribution also depends on source-to-substrate distance and particle energies; pressure alone does not determine a unique sidewall thickness.
The top surfaces receive the nominal film. Oblique rays coat accessible walls, while the tall opening shadows some directions from its lower portions. Growth at the mouth can further shadow the floor or form an overhang. The sidewall film is therefore neither guaranteed zero nor guaranteed as thick as the horizontal film. This step coverage is generally unfavorable for clean lift-off process if it connects the film on the resist to the film on the substrate.
The arrangement is diode sputter deposition: the Au target, a, is attached to the upper cathode assembly c; positive Ar ions bombard it and sputter Au onto the wafer. The lower wafer-holder electrode b is the anode in the simple two-electrode arrangement shown.
Unlike evaporation, sputtering needs enough inert gas to sustain a discharge. Over a low-pressure operating interval, raising Ar pressure can increase ionization and ion current and hence the sputtering rate at comparable applied voltage. This is not a universal monotonic law: at higher pressure, scattering and thermalization of sputtered Au reduce the fraction reaching the wafer; at fixed regulated power, target voltage and current also adjust. A pressure increase can initially increase the rate, but excessive pressure lowers transport efficiency.
In physical vapor deposition, material is physically released from a source and transported to the substrate, where it condenses. Three examples are thermal evaporative deposition, electron-beam evaporation and sputtering. Their angular distributions, source heating and energetic bombardment differ, even though all belong to the physical-deposition family.
In chemical vapor deposition, volatile reactants undergo chemical reactions that produce a solid film at or near the substrate, with gaseous products removed. Examples are atmospheric-pressure thermal CVD, low-pressure CVD and plasma-enhanced chemical vapor deposition. These are three established process variants, distinguished by pressure and activation method. Surface chemistry, precursor delivery and temperature determine growth, rather than condensation alone.
Atomic layer deposition is a related cyclic surface-reaction method, but need not be counted as a separate conventional CVD example to satisfy the requested three. Reactive sputtering can involve chemistry, so the boundary is best explained by the dominant source and transport mechanism rather than by claiming that a PVD chamber can contain no chemical reactions.
Zero step coverage means that a sidewall or hidden surface receives essentially no film even though a horizontal reference surface is coated. Deposition shadowing occurs when an upper edge intercepts trajectories that would otherwise reach a lower region. A directional high-vacuum evaporant flux can therefore coat a feature top while leaving vertical or reentrant walls uncoated.
Sputtering generally releases material from an extended target with a broad angular distribution; gas collisions can further redistribute arrival directions. More oblique trajectories can reach sidewalls, so the extreme zero-coverage behavior of an ideal collimated evaporant beam is reduced.
The absolute claim that these effects never occur in sputtering is too strong. Low-pressure directional sputtering and high-aspect-ratio or reentrant features can still exhibit shadowing and poor coverage. Broader incidence improves access; it does not make a physical deposition process universally conformal.
Scanning tunneling microscope Created 2026-10-14 Updated 2026-10-20
In the 1982 experiment, separate drives using piezoelectricity scanned a metal tip laterally and adjusted its height. A control unit held electric current fixed at constant tip-sample electric potential difference; calibrated drive voltages supplied the displacement readout. Their Fig. 1 explicitly contrasts a surface step with apparent height from contamination changing the work function.[ref]
Surface Studies by Scanning Tunneling Microscopy by Gerd Binnig and others. pp. 58–59, Fig. 1, equation (1), piezodrive calibration
Gerd Binnig and Heinrich Rohrer describe a later vibration isolation system using two spring stages and eddy current damping inside a vacuum chamber, with sputtering and annealing for surface preparation. These measures addressed unwanted motion and surface condition separately.[ref]
Sputtering 2026-10-18
Sputtering ejects surface chemical atoms from a solid through bombardment by energetic incident particles, often ions.

