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Quantum confinement restricts a particle's wavefunction over a length comparable with its characteristic quantum length scales, altering the allowed energy levels relative to a bulk material. For a parabolic band confined over width $L$, a characteristic spacing is of order ${\hslash }^2/(m^{\ast }{L}^2)$, with boundary-dependent numerical factors. A quantum dot confines all three directions; confinement in only one direction can leave continuous motion in the other two. Finite barrier height and interactions modify the simplest infinite-wall estimates.

A quantum dot confines Electrons and electron holes in all three spatial directions, producing discrete energy levels. A semiconductor island surrounded by a larger-band gap material is one realization. Its optical excitation and electron-hole recombination depend on confinement, Coulomb interactions and electric-dipole selection rules.

A quantum dot of InAs embedded in gallium arsenide confines injected Electrons and electron holes. Strain-driven island formation supplies dots with lateral dimensions of order tens of nanometres and heights of a few nanometres. In an electrically driven implementation, a dot lies in a junction's intrinsic region. Selecting one dot spatially and one radiative line spectrally turns discrete exciton recombination into a single-photon source. Pulsed injection must avoid re-excitation during the same collection window.

The pioneering electrically driven device used an areal dot density around $5\times 10^8\mathrm{c}{\mathrm{m}}^{-2}$, a GaAs p-i-n structure and an aperture selecting individual-dot light.^[ref]