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Tunneling through a controllable vacuum gap by Gerd Binnig and others made barrier width experimentally adjustable. Their apparatus used a pointed electrical conductor opposite a conducting plate, with fine positioning by piezoelectricity. Rubber-tube support and magnetic levitation above a cooled bowl exhibiting superconductivity suppressed vibrations; the junction itself remained near room temperature.^[ref]

The readout was electrical resistance versus displacement at a fixed electric potential difference of 60 mV of either polarity. They observed an exponential function dependence spanning four orders of magnitude. Cleaning and better vacuum increased the inferred barrier from approximately 0.6-0.7 eV to 3.2 eV. Reproducible curves and the cleaning response argued against deforming contamination layers; an appropriate slope also helped exclude an ordinary conducting contact. The paper reports residual contamination, electronics-limited range and a jump attributed to release of thermal stress; its curve origins generally do not determine absolute gap widths.^[ref]

The ideal tunnel junction model explains the slope. At fixed small electric potential difference, fixed tip geometry and approximately unchanged density of states, take an effective barrier energy $\Phi$ above the relevant electron states and approximate the current magnitude byThe coefficient $C$ includes the applied electric potential difference, available occupied and empty quantum states, and tip geometry. A single transmission probability is not an electric current: a junction combines contributions from many electron states in both directions, with the electric potential difference producing a net imbalance. Its tilted, material-dependent barrier is only approximated by the equal-exterior rectangular potential barrier; the exact single-particle formula above is not a complete junction model.

For the chosen model value $\Phi =4$ electronvolts, $\kappa \simeq 10.25{\mathrm{nm}}^{-1}$. Increasing separation by $0.1\mathrm{nm}$ multiplies $I$ by about $0.129$, a reduction by about $7.8$. The following diagram chooses $I(0.4\mathrm{nm})=1\mathrm{nA}$ solely for illustration; it contains no measured data and is not a fit to the 1982 curves.

Distance calibration is essential. In Scanning Tunneling Microscopy: From Birth to Adolescence by Gerd Binnig and others, the authors describe an initial inferred barrier near 1 eV. Recalibration found only half the quoted piezo displacement sensitivity and raised the inferred barrier above 4 eV. Thus an exponential trace alone was insufficient evidence for tunnelling through vacuum. The model makes the sensitivity explicit: the inferred $\Phi ={\hslash }^2(d\ln I/ds{)}^2/(8m_e)$ depends quadratically on the distance scale.^[ref]

For scanning tunnelling microscopy, feedback control adjusts the vertical position to hold electric current fixed during a lateral scan; the recorded height follows separation only when the surface is electronically homogeneous. Changes in the local density of states can also change apparent height. This limitation is already explicit in the authors' account of constant-current imaging.^[ref]

Separate geometry from electronic response in an original one-dimensional toy tunnel junction. Write the geometric surface height as $h(x)$, tip height as $z(x)$, and positive gap as $s(x)=z(x)-h(x)$. Assume low fixed tip-sample electric potential difference: the sampled energy window is narrow enough that the tip density of states is featureless and the sample local density of states varies little across that window. Neglect thermal broadening, changes of tip shape and lateral averaging. Let $\rho (x)>0$ be the effective sample local density of states divided by a positive reference value, so it is dimensionless. Choose a spatially constant effective barrier energy $\Phi >0$, a positive coefficient $C$ with units of electric current, andHere $m_e$ is the electron mass, $\hslash$ the reduced Planck constant, and $\kappa$ the tunnelling decay constant. This is an illustrative low-bias model, not a universal calibration formula. At fixed $I=I_0>0$, taking a logarithm givesThe logarithms have dimensionless arguments. Only constant $\rho$ makes the recorded height differ from geometric height by a constant. Multiplying $\rho$ by $r>0$ raises the apparent height by $\ln r/(2\kappa )$ without moving the geometric surface.

For a concrete ambiguity, choose $\kappa =10{\mathrm{nm}}^{-1}$, $a=0.020\mathrm{nm}$, lateral period $L=1\mathrm{nm}$, $s_0=0.50\mathrm{nm}$, and $q(x)=\cos (2\pi x/L)$. CompareBoth produce exactly $z(x)=s_0+aq(x)$ at $I_0=C{e}^{-2\kappa s_0}=C{e}^{-10}$. Substitution checks this without identifying $\rho$ with geometric height: case A has constant gap $s_0$, while case B has gap $s_0+aq(x)$ and a compensating electronic factor. The chosen ${\rho }_B$ ranges from $e^{-0.4}$ to $e^{0.4}$, approximately $0.6703$ to $1.4918$; every gap remains positive. The chosen $\kappa$ corresponds to $\Phi \simeq 3.81$ electronvolts, a positive effective barrier.

At fixed tip height $z_f=s_0$, both cases instead giveTheir maximum-to-minimum electric current ratio is $e^{0.8}\simeq 2.226$. Thus even adding this fixed-height scan at the same electric potential difference cannot distinguish these deliberately chosen surfaces within the toy model. Independent structural information or additional electronic measurements are required. Changing electric potential difference can supply such information, but also changes the assumptions used to define $C$ and $\rho$.

An isolated nanometre-sized island has small total capacitance $C_{\Sigma }=C_S+C_D+C_G+\cdots$, so discrete charge carries appreciable charging energy. A simple constant interaction model isAway from charge degeneracy, adding or removing an electron costs more energy than a sufficiently small thermal/bias window supplies. Coulomb blockade suppresses sequential tunnelling between resolved charge states.

A single-electron transistor has source and drain reservoirs connected to an island through two tunnel junctions, plus an insulated capacitive gate. Each junction has resistance and capacitance; the gate shifts electrostatic energies without carrying the transport current. The original device schematic labels all components.

Require $k_{B}T\ll E_C$, a source–drain window below the relevant transition, and junction resistances well above $h/e^2\simeq 25.8\mathrm{k\Omega }$ to suppress strong quantum charge fluctuations. Electromagnetic noise and lifetime broadening must also be small. Gate-induced charge degeneracy permits conduction even at small bias; there is no gate-independent blockade threshold. Resolving orbital levels additionally requires temperature and broadening below their spacing between energy levels.

The pattern is characteristic of a single-electron transistor: a small conducting island is connected to source and drain by two tunnel junctions, and to a gate through a capacitance. Inside a Coulomb diamond, changing the island's integer charge costs more energy than the leads can supply, so sequential tunnelling is blocked. Outside it, an island electrochemical potential lies in the transport window and current can flow.

For clear Coulomb blockade, the island charging scale must exceed thermal broadening, and the tunnel junctions must be sufficiently resistive to preserve well-defined charge states:in the simplest circuit. Stray capacitances should be included in $C_{\Sigma }$ if appreciable. The gate changes electrostatic energy but should not provide a conducting leakage path. Lifetime broadening and cotunnelling should be small enough not to wash out the blocked regions.

The almost identical unconfined diamonds are consistent with a constant interaction model having negligible or unresolved changes in single-particle level spacing.

The converse effect of piezoelectricity converts an applied electric potential difference into a small mechanical deformation, permitting fine control of a tunnel junction's separation.

Quantum tunnelling is transmission through a potential barrier even when the particle energy is below the barrier height.

The wavefunction penetrates the classically inaccessible region; matching it to an outgoing scattering state on the far side gives a nonzero transmission probability. For a real, time-independent potential barrier, the transmitted energy equals the incident energy: quantum tunnelling does not require a temporary violation of conservation of energy. A tunnel junction turns this small transmission probability into a measurable electric current, whose sensitivity to separation makes the scanning tunnelling microscope possible.

Scanning tunneling microscopy uses a scanning tunneling microscope to map a surface from the electric current across a tunnel junction. In constant-current operation, feedback control adjusts the tip height to maintain a chosen electric current. The current-distance test of vacuum tunnelling explains the underlying distance sensitivity and its measurement limits.

The image records the response of a tunnel junction, rather than photographing chemical atoms. Its apparent height can reveal both surface structure and the local density of states; distinguishing them is part of interpreting the measurement.^[ref]

A small charge island coupled to source and drain through tunnel junctions and capacitively to a gate. Resolved island charging makes sequential tunnelling depend on discrete charge states.

A tunnel junction separates two conducting electrodes by a thin barrier through which electrons undergo quantum tunnelling.