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A periodic lattice Hamiltonian commutes with lattice translations. The Bloch theorem therefore classifies its states by characters of the translation group:where $u$ is lattice periodic. For each crystal momentum $\mathbf{k}$, solving on a primitive cell with the corresponding quasiperiodic boundary condition gives discrete eigenvalues indexed by $n$. Their continuous dependence on $\mathbf{k}$ produces the energy bands $E_n(\mathbf{k})$ as $\mathbf{k}$ ranges through the Brillouin zone. Bragg mixing opens gaps at suitable degeneracies, although bands can overlap in three dimensions and gaps are not guaranteed between every pair.

The quantum numbers are band index, wavevector modulo reciprocal lattice vectors, and spin where spin is conserved. In a finite crystal the allowed wavevectors are discrete; in the thermodynamic limit they become dense and the band description emerges. Spin-orbit coupling can replace a separately conserved spin label by an appropriate internal band label.

Dilute randomly placed impurities break exact translation symmetry, so crystal momentum is no longer an exact quantum number. Most extended states retain approximately the host band structure but acquire impurity scattering and disorder broadening. An impurity potential can also produce impurity levels in a crystal, often in a band gap: levels associated with a donor impurity lie near the conduction-band edge and can supply electrons, while those associated with an acceptor impurity lie near the valence-band edge and can create holes. The impurity's species and potential determine whether such levels exist and how deep they are; not every impurity necessarily makes a gap state. At low density these levels are nearly isolated, while overlap at increasing density can broaden them into an impurity band. Added or removed carriers shift the chemical potential as well.

Treat the $p^{+}$ strips as much more strongly doped than the $n$ bulk, so the depletion layer lies predominantly in the latter. Fully ionized donors leave uniform space charge $\rho =e{N}_D$. In one dimension,At the depletion boundary $x=d$, the minimum-bias solution has $E(d)=0$. Thus $E(x)=e{N}_D(x-d)/{ϵ}_{\mathrm{Si}}$, and the magnitude of the potential drop isFor $N_D=10^{18}{\mathrm{m}}^{-3}$, $d=300\mu \mathrm{m}$, and ${ϵ}_r=11.6$, this isThe applied reverse bias is approximately this value; more precisely the built-in junction potential contributes to the total depletion voltage and is subtracted from the required external bias. It is small on the scale of seventy volts and is not specified. Here the stated free-carrier density is used as the effective donor density of the neutral bulk before depletion.

Semiconductor doping introduces impurities with levels close to the band edges. A donor impurity can release an electron to the conduction band, leaving a fixed positive ion; an n-type semiconductor has electrons as majority carriers. An acceptor impurity can take an electron from the valence band, leaving a mobile hole and fixed negative ion; a p-type semiconductor has holes as majority carriers. The opposite species remains as a minority carrier population, and a neutral bulk sample balances the ionised dopants with mobile carriers.

At a p-n junction, concentration gradients initially drive electrons and holes across the join. Their removal near the join exposes negative acceptor ions on the p side and positive donor ions on the n side, forming a depletion region. Its electric field opposes further majority-carrier diffusion. Equilibrium has a flat Fermi level, no net current and spatially bent band edges. With p on the left and n on the right, the electron band edges fall towards the n side; the difference is the equilibrium barrier in electron energy. A flat Fermi level does not mean flat conduction and valence edges.

Doping changes the mobile carrier population by introducing controlled impurity levels. In an intrinsic semiconductor, the filled valence band is separated from the nearly empty conduction band by a band gap $E_g$. Thermal excitation produces an electron-hole pair, so the electron and hole number densities obey $n=p=n_i$. A electron hole represents a missing valence-band electron and behaves as a mobile positive charge carrier. For nondegenerate bands in thermal equilibrium,Here $N_C,N_V$ are the effective density of states, $E_C,E_V$ the band edges, and $E_F$ denotes the chemical potential, conventionally called the Fermi level. The semiconductor mass-action law holds in this nondegenerate equilibrium regime.

In a tetrahedrally bonded elemental semiconductor such as silicon, a substitutional group-V atom has an extra outer electron relative to the host. It is a donor impurity: a shallow level just below $E_C$ can ionise, releasing an electron to the conduction band and leaving a fixed positively charged donor. The resulting n-type semiconductor has electrons as majority carriers and holes as minority carriers. Conversely a group-III substitution supplies one fewer bonding electron. An acceptor impurity can take an electron from the valence band, leaving a mobile electron hole and a fixed negative acceptor; the resulting p-type semiconductor has holes as majority carriers.

The impurity state is shallow because the electron or hole responds to a screened Coulomb potential and an effective mass, rather than the bare atomic potential. A simple hydrogenic donor estimate iswhere ${ϵ}_r$ is the relative permittivity. This is a useful scaling model, with real band anisotropy and central-cell effects omitted. Dopants are fixed in the lattice; their ionisation changes mobile carrier numbers without making a uniformly doped bulk sample carry a large net electric charge.

The charge neutrality condition isWhen shallow dopants are almost fully ionised and $N_D-N_A\gg n_i$, an n-type region has $n\simeq N_D-N_A$ and $p\simeq n_i^2/n$. A p-type region similarly has $p\simeq N_A-N_D$ and $n\simeq n_i^2/p$. Thus compensation by the opposite impurity type reduces the majority-carrier density; the total dopant concentration is not generally the mobile carrier density. At sufficiently high impurity density the degenerate semiconductor regime requires the full Fermi-Dirac distribution and these exponential approximations fail.

There are three useful temperature regimes. At low temperature, dopant freeze-out leaves many shallow levels un-ionised. In the extrinsic regime, the dopants are largely ionised and set the majority-carrier density. At high enough temperature, intrinsic pair creation dominates and $n,p$ approach $n_i$. The Fermi level moves towards the conduction band with donor doping and towards the valence band with acceptor doping. The electrical conductivity isDoping therefore controls conductivity and its carrier type, but ionised impurities also scatter carriers and can reduce charge carrier mobility. Carrier density and mobility must both be considered.

A p-n junction forms when p-type and n-type regions are joined within a semiconductor. Initially the concentration gradients drive diffusion current: electrons diffuse from the n region to the p region and holes in the opposite direction. Recombination removes mobile majority carriers near the join, exposing fixed positive donors on the n side and fixed negative acceptors on the p side. This forms a depletion region and an electric field directed from n to p. Its drift current opposes diffusion. At equilibrium the net current vanishes and the Fermi level is uniform, although the band edges vary spatially through band bending.

For an abrupt nondegenerate junction with fully ionised dopants, its built-in potential isUnder the depletion approximation, the space-charge densities are $-e{N}_A$ on a p-side width $w_p$ and $+e{N}_D$ on an n-side width $w_n$. Integrating Poisson equation and imposing zero field outside gives $N_A{w}_p=N_D{w}_n$ andMost of the depletion width therefore extends into the more lightly doped side. The schematic shows the impurity levels before contact and the resulting space charge and potential after contact; there is no externally extractable equilibrium battery voltage from the built-in field alone.

A forward bias, with p positive relative to n, reduces the barrier from $V_{\mathrm{bi}}$ towards $V_{\mathrm{bi}}-V$ and injects minority carriers across the junction. In the ideal low-injection, diffusion-controlled regime this produces the Shockley diode equation, $I=I_s[e^{eV/(k_{B}T)}-1]$. Reverse bias increases the barrier and the depletion region; only a small thermally generated minority-carrier current flows before breakdown. Reverse-biased depletion regions also give a voltage-dependent junction capacitance. Real devices have recombination, leakage, series resistance and breakdown mechanisms beyond the ideal law. Controlled doping creates majority and minority carriers, and their junction produces a depletion barrier that makes rectification possible.

Take an abrupt equilibrium p-n junction with the p side at $x<0$ and the n side at $x>0$. In the quasi-neutral bulk, electron holes are the majority carriers on the p side and electrons are the majority carriers on the n side. With ionized dopant densities $N_A,N_D$ and nondegenerate statistics,where $n_i$ is the intrinsic carrier concentration. The semiconductor mass-action law $np=n_i^2$ applies at equilibrium. Both mobile populations are small in the depletion region compared with the dopant densities.

The charge and carrier density of an abrupt p-n junction must distinguish mobile populations from net charge. Diffusion leaves negatively charged ionized acceptor impurities on the p side and positively charged ionized donor impurities on the n side. Under the depletion approximation,The neutral bulks have large carrier densities but nearly zero net charge density. The electric field points from the positive donor region toward the negative acceptor region, balancing diffusion at equilibrium.

The figure uses equal dopant densities only to show a simple symmetric sketch. Generally the more lightly doped side has the wider depleted interval. The carrier profiles are smooth, whereas the step-shaped net charge density is the ideal depletion approximation.

Semiconductor doping introduces controlled impurities to alter equilibrium carrier populations and electrical conductivity. In an intrinsic semiconductor, thermally excited electrons in the conduction band and electron holes in the valence band have equal densities $n=p=n_i$. A shallow donor impurity, such as phosphorus in silicon, supplies an electron from an impurity level just below the conduction-band edge. Once ionized it is positively charged, and the material is n type. An acceptor impurity, such as boron in silicon, accepts a valence electron into a level just above the valence-band edge, leaving a mobile hole and a negatively charged ionized impurity; the material is p type.

With dopant densities $N_D,N_A$, charge neutrality requiresFor fully ionized, nondegenerate dopants at equilibrium, the semiconductor mass-action law gives $np=n_i^2$. In a substantially n-type sample, $N_D-N_A\gg n_i$, soThe corresponding p-type result is $p\simeq N_A-N_D$ and $n\simeq n_i^2/(N_A-N_D)$. The majority population grows while the minority population decreases; adding donors does not simply add equal numbers of free electrons and holes.

The Fermi energy shifts toward the conduction band for n-type material and toward the valence band for p-type material. In the nondegenerate approximation,where $N_C,N_V$ are effective band-edge state densities. At very low temperature, dopants may not be ionized and carrier freeze-out occurs. At intermediate temperatures, ionized dopants dominate the carrier density; at sufficiently high temperature, intrinsic excitation can dominate. Heavy doping can produce degenerate carrier statistics, invalidating these Boltzmann expressions.

The electrical conductivity is $\boxed{\sigma =e(n{\mu }_e+p{\mu }_h)}$. Doping usually raises the majority carrier density, but ionized impurity scattering can lower mobility, so conductivity need not scale indefinitely with dopant concentration. Joining p-type and n-type regions creates a p-n junction, with a depletion region and built-in electric field established by carrier diffusion and compensating drift. The fixed ionized dopants, not an absence of all charge, account for the depleted region's net charge density.

Take a p-n junction made from one semiconductor, with the p-type semiconductor on the left and the n-type semiconductor on the right. At thermal equilibrium the chemical potential $\mu =E_F$ is horizontal throughout. Before contact the chemical potential lies nearer the valence band on the p side and nearer the conduction band on the n side; after contact the band edges bend to permit one common value.

In this orientation both the conduction band edge $E_C$ and the valence band edge $E_V$ decrease from p to n by $e{V}_{\mathrm{bi}}$. For a homojunction their separation $E_g=E_C-E_V$ is constant. The acceptor impurity level $E_A$ lies just above $E_V$ where acceptors are present, and the donor impurity level $E_D$ lies just below $E_C$ where donors are present. These impurity levels follow the local band bending; they do not form one additional horizontal band across the device.

The shaded depletion region has few mobile electrons or electron holes and contains fixed negative ionized acceptor impurities on the p side and positive ionized donor impurities on the n side. Thus its electric field points from n to p. Its neutral outer regions have negligible electric field, so the band edges become flat there. In the depletion approximation, charge neutrality requires $N_A{x}_p=N_D{x}_n$; the symmetric drawing illustrates $N_A=N_D$ rather than assuming that equality is universal. Diffusion and field-driven drift current cancel at equilibrium: no applied voltage does not mean zero internal electric field or zero built-in electric potential difference.

An intrinsic semiconductor has negligible electrically active impurity doping, and thermal excitation across its band gap produces equal electron and hole densities $n=p=n_i$. In an extrinsic sample, semiconductor doping supplies donor impurities or acceptor impurities, so one carrier species dominates over a range of temperatures. Doping does not remove the possibility of low-temperature dopant freeze-out or high-temperature intrinsic behavior.

Assume parabolic isotropic band edges, spin degeneracy two, a single valley, thermal equilibrium and nondegenerate carriers. Write $E_F$ for the Fermi level, and measure conduction-band energy by $E=E_c+ϵ$. Counting momentum states gives the density of states per unit volumeThe low-occupation Maxwell–Boltzmann statistics givesThe substitution $x=ϵ/(k_{B}T)$ and ${\int }_0^{\infty }\sqrt{x}{e}^{-x}dx=\sqrt{\pi }/2$ give the coefficient. Similarly $p=N_v{e}^{(E_v-E_F)/(k_{B}T)}$ and $N_v=2[m_h^{\ast }{k}_{B}T/(2\pi {\hslash }^2){]}^{3/2}$. Multiplication eliminates $E_F$, proving the semiconductor mass-action lawHere the supplied effective masses are treated as the masses entering the effective density of states. A detailed multivalley silicon model would require the appropriate valley degeneracy and density-of-states masses consistently; adding an extra factor without changing the stated model would alter the requested expression.

A pentavalent arsenic impurity supplies a weakly bound excess electron. In the hydrogenic donor state approximation, dielectric screening reduces the Coulomb attraction and the band effective mass replaces the free mass. Hence the donor binding energy isThis is the effective-mass estimate, without a material-specific central-cell correction.

For the temperature plot use donor density $N_D=10^{15}{\mathrm{cm}}^{-3}$ and no acceptors. The charge neutrality with partial donor ionization model puts $E_D=E_c-E_b$ and includes the twofold spin degeneracy of an occupied donor:These equations give three regimes. At low temperature, $p$ is negligible and strong dopant freeze-out gives $n\simeq \sqrt{N_D{N}_c/2}{e}^{-E_b/(2k_{B}T)}$. At intermediate temperature, the donors are almost ionized and intrinsic holes remain rare, so $n\simeq N_D$. At high temperature, $n\simeq p\simeq n_i\propto T^{3/2}{e}^{-E_g/(2k_{B}T)}$. Thus the log-density plot against inverse temperature has a steep intrinsic segment on the left, a nearly horizontal extrinsic plateau, and a freeze-out decline on the right; the $T^{3/2}$ and $T^{3/4}$ factors give slight curvature.

To quantify “approximately constant”, require $0.9N_D\le n\le 1.1N_D$. At $300\mathrm{K}$, the specified model gives $N_c\simeq 4.12\times 10^{18}$, $N_v\simeq 8.61\times 10^{18}$ and $n_i\simeq 2.33\times 10^9{\mathrm{cm}}^{-3}$. The full neutrality equations give the ten-percent plateau intervalThe lower boundary is set by donor ionization and the upper boundary by intrinsic electron-hole production. The large ratio $N_c/N_D$ allows substantial donor ionization even when $k_{B}T<E_b$; using only $k_{B}T\gg E_b$ would incorrectly exclude much of the plateau. The quoted interval depends on the chosen tolerance and the constant-gap band model, rather than being an exact measured range for arsenic-doped silicon.

Ordinary doped semiconductor devices need a regime where their donor impurities or acceptor impurities supply mobile charge carriers while intrinsic thermal excitation remains sufficiently small.

At low temperature, donor impurities or acceptor impurities may no longer be ionized. Dopant freeze-out reduces the carrier density, raises electrical resistance and changes the intended carrier injection and p-n junction response. At high temperature the intrinsic carrier concentration grows aswhen band effective masses and band gap are treated as constant. Once it becomes comparable with the net doping density, it overwhelms the intended electron-hole imbalance; reverse leakage and dissipation increase and useful p/n control is lost.

The usual operating window lies between freeze-out and intrinsic conduction, with mobility and thermal management placing further practical limits. This is a statement about conventional doped-device operation, not a fundamental prohibition on engineered cryogenic or wide-bandgap devices.

A p-n junction joins regions of a semiconductor with opposite majority charge carriers: electrons on one side and electron holes on the other. It provides the junction modeled by the Shockley diode equation.

Near an unbiased p-n junction, diffusion leaves exposed ionized donor impurities and acceptor impurities. Their electric field opposes further majority-carrier transfer. At thermal equilibrium, drift and diffusion balance; there is no net electric current. Forward bias reduces the barrier to carrier injection; reverse bias enlarges it. A heavily doped tunnel diode adds a different transport route, quantum tunnelling, that the ordinary Shockley diode equation omits.

The controlled introduction of impurities to change a semiconductor's charge carrier populations. Donor impurities and acceptor impurities can produce an n-type semiconductor or a p-type semiconductor, respectively; compensation and temperature also matter.

Substitutional semiconductor doping replaces selected host atoms with impurity atoms on ordinary lattice sites. A shallow donor impurity can supply a mobile conduction electron and remain positively charged; a shallow acceptor impurity can capture an electron and leave a mobile valence hole, remaining negatively charged. In nondegenerate, substantially ionized material, donor-dominated doping raises the chemical potential toward the conduction edge and acceptor-dominated doping lowers it toward the valence edge. Dopants do not create net bulk charge in a neutral sample: fixed impurity charge compensates the mobile carrier charge. Freeze-out, compensation and degeneracy qualify the simplest relation between dopant and carrier densities.