An intrinsic semiconductor has electron and hole densities , so . In a fully ionised, uncompensated n-type sample with , , , and
Thus a carrier-density ratio alone is not generally the electrical conductivity ratio. If electron mobility is unchanged and electron transport dominates the intrinsic conductivity, it reduces to ; equal electron and hole mobilities instead give . Ionised-impurity scattering can change the doped mobility.
Electron mobility 2026-10-18
The positive electron mobility relates the drift velocity of conduction Electrons to an electric field: . In the isotropic Drude model, , where is the momentum relaxation time and the band effective mass. The minus sign describes negative charge; the electron mobility itself is positive.
The atomic number density is
One fully ionised single-electron donor per million atoms gives
The usual simplified answer treats conductivity as proportional to Electron concentration and assumes unchanged electron mobility, giving about times the undoped conductivity. There is a qualification: the conductivity ratio of doped and intrinsic semiconductors is not fixed by Electron counts alone. Intrinsic material also has , whereas the heavily n-type sample has and . Therefore
With unchanged Electron mobility and negligible intrinsic hole conductivity this reduces to ; with equal, unchanged Electron and hole mobilities it is about . The problem supplies no mobilities, so the density-ratio estimate requires its stated approximation. Ionised impurities may additionally reduce mobility.
Let denote the elementary charge, so an Electron's charge is . In the relaxation-time Drude model with positive transport effective mass,
The steady drift velocity is , defining positive electron mobility . The current density is opposite to the Electron drift:
By the definition of electrical conductivity, , so
Its units are . The mobility definition alone establishes the result in the scalar linear-response regime; the relaxation-time equation supplies a microscopic approximation for .
Treat sodium as monovalent, with one mobile Electron per atom. Its mass density is , and its molar mass is . Using the Avogadro constant,
The electron mobility relates the magnitude of drift velocity to electric field. The Drude model then gives
Using ,
The inferred time is the momentum relaxation time. Identifying it with the mean time between collisions is the intended simple isotropic Drude model assumption; small-angle scattering need not relax directed momentum in a single event.
For a single carrier species with positive charge carrier mobility , the Hall coefficient and longitudinal electrical conductivity are
Take the electric current density along , magnetic field along , and no transverse current. Then and , giving the Hall angle relation
The sign specifies the electron Hall polarity; the ratio of field magnitudes is . Converting the stated electron mobility to SI gives . Therefore
This uses the homogeneous single-carrier Drude model; the carrier density cancels.
The drift velocity is the small ensemble-average velocity acquired by charge carriers in an applied electric field. It is distinct from their much larger random thermal or Fermi velocity. For conduction Electrons of charge , the isotropic Drude model gives
where is the momentum relaxation time.
The positive electron mobility measures the ease of this drift in linear response. In the same approximation,
Its units are ; in an anisotropic crystal the mobility is a tensor.
The band effective mass describes the acceleration implied by the curvature of the dispersion relation. The group velocity is , while . Thus
For an isotropic parabolic minimum this reduces to and . It incorporates the periodic crystal potential and need not equal the bare electron mass. Negative electronic curvature near a band maximum is conveniently described by positive-mass electron holes.