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A completely filled valence band carries no net current: its occupied crystal-momentum states have velocities that cancel. Near a valence-band maximum, an almost full band is conveniently described by the few missing electrons, or electron holes. Removing an electron of charge $-e_0$, with $e_0>0$, changes the charge relative to the filled band by $+e_0$. This is a quasiparticle description of electronic motion, not a mobile positive ion or a Positron.

For an isotropic parabolic maximum, ${ϵ}_v(\mathbf{k})=E_v-{\hslash }^2{k}^2/(2m_h^{\ast })$. Assign the missing-electron state momentum ${\mathbf{k}}_h=-{\mathbf{k}}_e$ and hole energyIt has positive effective mass $m_h^{\ast }$. Its velocity equals the velocity of the missing electron state, and its positive-charge current replaces the negative of that state's electronic current. Semiclassical motion is thus $\hslash {\dot{\mathbf{k}}}_h=+e_0(\mathbf{E}+{\mathbf{v}}_h\times \mathbf{B})$. With momentum relaxation time ${\tau }_h$, the low-field mobility is ${\mu }_h=e_0{\tau }_h/m_h^{\ast }$ andIf electrons also contribute, $\sigma =e_0(p{\mu }_h+n{\mu }_e)$: the two species' longitudinal conductivities add.

A Hall bar separates carrier concentration from mobility. Apply current density $j_x$, magnetic field $B_z$, and measure transverse electric field $E_y$. For one isotropic hole population, transverse force balance gives $E_y=v_x{B}_z$, soFor thickness $t$, the Hall-voltage magnitude is $|V_H|=IB/(e_{0}pt)$. A longitudinal four-terminal resistance measurement supplies $\sigma$ independently. Use ohmic contacts, known conducting thickness, controlled temperature and low enough current to avoid self-heating. Reversing magnetic field removes even-in-field longitudinal offsets from contact misalignment; reversing current also helps reject thermoelectric offsets. These are central controls, rather than merely taking one transverse voltage reading.^[ref]

The simple inference assumes one carrier type and a known Hall scattering factor. More generally $R_H=r_H/(e_{0}p)$, so $\sigma R_H$ measures Hall mobility rather than automatically the drift mobility. With two carrier populations at weak field,Its sign alone need not identify the more numerous carrier. A Hall experiment also cannot determine $m_h^{\ast }$ and ${\tau }_h$ separately: their ratio sets mobility. cyclotron resonance supplies an independent mass measurement by sweeping frequency or magnetic field through $\omega =e_{0}B/m_c$ and detecting resonant absorption. The measured cyclotron effective mass can depend on band anisotropy and need not equal every curvature mass; the isotropic parabolic model identifies them. Its linewidth provides a scattering-time estimate only with a specified damping model.

semiconductor doping generates holes by adding acceptor impurities. In silicon, a substitutional group-III atom such as boron provides one fewer valence electron than silicon. A shallow acceptor level lies slightly above the valence-band edge: accepting a valence electron makes the dopant negatively ionized and leaves a mobile hole in the valence band. The impurity stays fixed in the lattice. charge neutrality and the nondegenerate equilibrium mass-action law giveFor fully ionized, uncompensated acceptors in the extrinsic regime, $p\simeq N_A$ and $n\simeq n_i^2/N_A$; with fully ionized donor compensation, $p\simeq N_A-N_D$ while holes remain dominant. The Fermi level moves towards the valence band. At low temperature, semiconductor carrier freeze-out suppresses mobile electron holes; at high temperature intrinsic electron-hole generation can dominate. Increasing dopant density also changes scattering, so a conductivity increase alone cannot distinguish increased carrier density from changed mobility. Temperature-dependent Hall and conductivity measurements separate these effects, subject to the carrier and scattering qualifications above.