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In December 1947, John Bardeen and Walter Houser Brattain obtained transistor action at Bell Telephone Laboratories. William Shockley proposed the distinct bipolar junction transistor within the following month.^[ref]

Their 1948 paper describes ground, etched germanium, initially also anodized and rinsed. Surface contacts separated by $50$–$250\mu \mathrm{m}$ share a broad base contact. Positive emitter biasing injects electron holes; negative collector biasing draws them toward the collector. An input signal changes emitter electric current, and a collector electrical load converts the resulting change into voltage.^[ref]

Early electric field control experiments gave unexpectedly weak responses. John Bardeen proposed that surface states screened the interior. Surface charge could create a barrier and a hole-rich semiconductor inversion layer. Replacing an electrolyte control with a gold contact reversed the response sign, suggesting electron hole carrier injection. Closely spaced contacts made from a gold-coated wedge split with a razor then enabled power gain. The relative importance of surface and bulk transport depended on preparation and collector forming.^[ref]

The 1948 authors found that collector-current increments could exceed emitter-current increments; their current gain depended on biasing.^[ref] A terminal-current ratio alone cannot identify the microscopic path. Surface states, the local barrier, carrier injection and contact preparation prevent a single ideal modern bipolar junction transistor model from explaining every point-contact transistor.

For the conventional electric current directions drawn in the figure, $I_E$ enters the emitter, $I_C$ leaves the collector and signed $I_B$ enters the base. Kirchhoff's current law requiresThus a local current gain $\alpha >1$ requires an accompanying base-current change. The collector increment is not simply a count of injected electron holes, and it does not violate electric charge conservation.

For an experiment following the functional arrangement, first establish each contact's separate current-voltage characteristic relative to the base. Then hold collector biasing fixed, vary a small emitter signal, and compare the collector electrical load voltage with the input. A decisive power gain check measures both input electric current and voltage and the output power in a known electrical load; voltage enlargement alone is insufficient. These are proposed measurement controls, not additional claims about the 1947 laboratory record.

Repeating a setting tests drift; reversing or removing emitter biasing tests whether the response requires carrier injection. Contact motion, surface contamination, temperature, direct electrical coupling and noise can all affect the inference. A small-signal model describes measured local terminal response without deciding every microscopic mechanism.

A bipolar junction transistor has two p-n junctions sharing a thin base region, arranged n-p-n or p-n-p. In its forward amplification regime, the emitter junction injects minority carriers; many cross the base before electron-hole recombination and reach the reverse-biased collector junction.^[ref]

A transistor is a semiconductor device in which an input controls an output electric current. Used with biasing and an electrical load, it can form an electronic amplifier or a switch. Its power gain comes from an external supply: the input signal controls the conversion of supplied energy into output signal power.

The point-contact transistor makes the idea tangible: two nearby contacts interact through one piece of semiconductor. A bipolar junction transistor instead uses two p-n junctions and a thin intervening region. The distinction matters both for the history and for choosing a physical model.