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A higher-order tunnelling process through intermediate virtual charge states. It can produce transport inside a region where sequential first-order tunnelling is suppressed by Coulomb blockade. Its relevance grows as junction coupling increases.

A small electron island confined laterally by depletion gates in an already vertically confined two-dimensional electron gas. Tunnel barriers couple it to reservoirs, and a plunger gate tunes charge occupation. Coulomb blockade and orbital confinement resolve individual electron additions.

An initially localized escaping electron occupies a superposition of lead momentum states. In a uniform free one-dimensional lead,A packet centered at $k_0$ moves with group velocity $\hslash k_0/m^{\ast }$ and generally spreads because its components have different velocities. For an initially unchirped minimum-uncertainty Gaussian wave packet,This illustrates dispersive evolution; the actual emission contact determines $a(k)$ and whether only outward-propagating components are appreciable. It does not instantaneously become a single lead plane wave.

A single-electron transistor used as a sensitive electrometer exploits Coulomb blockade: a nearby charge shifts the offset $Q_{\mathrm{ext}}$ and therefore the conductance peaks. This requires stable calibrated capacitances and low charge noise, rather than merely a small conductor.

A gallium arsenide/aluminium gallium arsenide semiconductor heterostructure combines lower-gap GaAs with a higher-gap AlGaAs barrier. In a modulation-doped design, AlGaAs donors supply electrons to lower conduction-band states on the GaAs side. An undoped spacer separates the channel from ionized donors and reduces impurity scattering. The interface barrier and band bending quantize motion normal to the interface while allowing in-plane motion: a two-dimensional electron gas.

The normal confining potential is commonly triangular and finite rather than an infinite square well. At suitable density and low temperature, only the lowest normal subband is occupied. modulation doping reduces an important scattering source; it does not eliminate all disorder.

Use negatively biased surface gates to deplete the surrounding electron gas and leave a rectangular central region. Gate voltage controls lateral dimensions and barrier heights. Two constrictions can weakly couple the region to reservoirs, with a plunger gate controlling population. Etched boundaries are possible but may introduce edge disorder. A flat interior and steep edges approximate a box, givingFringing fields, finite barriers and penetration change the ideal result. A 2DEG confines only the normal direction; gates supply the extra lateral confinement. Gate-dependent spectroscopy can test level spacings, while charging measurements separate orbital confinement from Coulomb blockade.

An isolated nanometre-sized island has small total capacitance $C_{\Sigma }=C_S+C_D+C_G+\cdots$, so discrete charge carries appreciable charging energy. A simple constant interaction model isAway from charge degeneracy, adding or removing an electron costs more energy than a sufficiently small thermal/bias window supplies. Coulomb blockade suppresses sequential tunnelling between resolved charge states.

A single-electron transistor has source and drain reservoirs connected to an island through two tunnel junctions, plus an insulated capacitive gate. Each junction has resistance and capacitance; the gate shifts electrostatic energies without carrying the transport current. The original device schematic labels all components.

Require $k_{B}T\ll E_C$, a source–drain window below the relevant transition, and junction resistances well above $h/e^2\simeq 25.8\mathrm{k\Omega }$ to suppress strong quantum charge fluctuations. Electromagnetic noise and lifetime broadening must also be small. Gate-induced charge degeneracy permits conduction even at small bias; there is no gate-independent blockade threshold. Resolving orbital levels additionally requires temperature and broadening below their spacing between energy levels.

The map shows Coulomb blockade with discrete single-electron charging: low-current diamonds separate charge-stable regions from finite-bias transport windows. A small conducting island or quantum dot must be tunnel-coupled to source and drain, with a gate shifting its electrochemical potential. Charging prevents sequential transport until an island addition/removal energy enters the bias voltage window.

The tunnel resistances should substantially exceed the resistance quantum $h/e^2\simeq 25.8\mathrm{k\Omega }$, preventing charge fluctuations from washing out integer island occupancy, while still permitting a measurable current. Temperature and tunnel broadening must be small compared with the addition-energy scale. Here the smaller diamonds imply $e^2/C_{\Sigma }\simeq 2.5\mathrm{meV}$, so $k_{B}T\ll 2.5\mathrm{meV}$, or $T\ll 29\mathrm{K}$; resolving the inferred 1 meV orbital structure requires the stricter scale $T\ll 12\mathrm{K}$. Stray capacitance and unintended multiple islands can complicate this simple interpretation.

The pattern is characteristic of a single-electron transistor: a small conducting island is connected to source and drain by two tunnel junctions, and to a gate through a capacitance. Inside a Coulomb diamond, changing the island's integer charge costs more energy than the leads can supply, so sequential tunnelling is blocked. Outside it, an island electrochemical potential lies in the transport window and current can flow.

For clear Coulomb blockade, the island charging scale must exceed thermal broadening, and the tunnel junctions must be sufficiently resistive to preserve well-defined charge states:in the simplest circuit. Stray capacitances should be included in $C_{\Sigma }$ if appreciable. The gate changes electrostatic energy but should not provide a conducting leakage path. Lifetime broadening and cotunnelling should be small enough not to wash out the blocked regions.

The almost identical unconfined diamonds are consistent with a constant interaction model having negligible or unresolved changes in single-particle level spacing.

For the spin separation at a smooth quantum Hall edge, linearize the confinement energy at a crossing. Compensating a spin energy difference by a potential-energy change givesHere $V^{\prime }$ is interpreted as the specified slope of electron potential energy. If it denotes electrostatic voltage per length instead, the denominator is $e|V^{\prime }|$. The two edges of a neck and the two sides of an antidot have oppositely directed slopes; the formula is a positive local separation on any one edge. For local filling two, only the $n=0$ spin pair is occupied at the neck minimum: $E_{0,+}+U_{\min }<E_F<E_{1,-}+U_{\min }$. Raising both branches with the confinement produces two crossings on each side, as shown in the original neck sketch. This fixed-slope estimate precedes self-consistent electrostatic screening.

An antidot is a depleted potential hill. guiding centres circulate around its closed equipotentials, with chirality opposite to the outer sample edge. A phase-coherent round trip contributes magnetic phase $2\pi BS/{\Phi }_0$, with ${\Phi }_0=h/e$. A localized orbit resonant with the incident energy can transfer an electron between extended channels. If the outgoing channel returns toward the injecting reservoir, the process is resonant reflection and reduces electrical conductance. If coupling instead connects an otherwise blocked incident channel to the far reservoir, it is resonant transmission and adds electrical conductance. Transmission peaks require that forward connectivity; a closed orbit by itself does not guarantee them. Interchannel scattering can change which orbit participates.^[ref]

For the antidot resonance conductance bounds with one active spin-resolved resonance, writeHere ${\Gamma }_L,{\Gamma }_R$ are energy broadenings; the corresponding escape rates are ${\Gamma }_L/\hslash ,{\Gamma }_R/\hslash$. In a reflection-dominated configuration with two otherwise transmitted channels, $G=(e^2/h)(2-\mathcal{L})$: a $2e^2/h$ background can dip to $e^2/h$. In a transmission-dominated configuration with one spectator channel and the second otherwise blocked, $G=(e^2/h)(1+\mathcal{L})$: peaks rise from $e^2/h$ toward $2e^2/h$. These are the two ideal channel-count examples plotted below. More generally, $G=(e^2/h)(N_{\mathrm{open}}-R)$ or $(e^2/h)(N_{\mathrm{dir}}+T)$; a different spectator count changes the integer offset. The constriction filling alone does not specify every tunnel coupling or resonance height. Equal couplings permit unit resonant transfer in the isolated-level model; asymmetry, temperature and dephasing reduce the contrast. Holding the effective orbit area approximately fixed gives $\Delta B\simeq h/(eS)$ for one branch, not a universal charging-corrected period.

In quantum-dot versus antidot resonance topology, a quantum dot is a potential well holding a finite electron island. Its closed guiding-centre circulation is reversed relative to an antidot at the same field. With two barriers in series, current follows source $\to$ dot $\to$ drain; off resonance there need not be a direct conducting path. A gate shifts a level or an addition electrochemical potential into alignment with the reservoirs and produces a electrical conductance peak. For an isolated coherent spin-resolved level, the zero-temperature peak is at most $e^2/h$ and reaches it only for equal couplings; unresolved noninteracting spin degeneracy doubles this bound. In weak sequential tunnelling, peak height depends on rates and temperature rather than being quantized. Charging produces Coulomb blockade peaks with spacing set by addition energy and gate lever arm. An antidot also supports discrete orbit/charging resonances, but can be side-coupled to already open channels and produce dips. Gate voltage changes both orbit area and confinement, whereas a magnetic sweep directly changes enclosed flux.

Coulomb interactions require a self-consistent confinement potential. A gradual decrease in electron density cannot leave arbitrary uncompensated donor charge at no cost. Partly occupied Landau levels have a large charge response: electrostatic screening flattens their effective energy near the Fermi energy over compressible quantum Hall edge strips. Between them, integer-filled incompressible quantum Hall edge strips have a gap, weak density response and most of the potential variation. In an idealized cross-section the effective branch thus alternates between flat, partially occupied portions and rising portions crossing a gap; its carrier density varies oppositely. The bare levels still have Landau level and spin splittings locally, but the common electrostatic potential is no longer an imposed straight slope. exchange interaction can additionally renormalize spin gaps. Widths must follow electrostatics and the density gradient, so the unscreened $E_Z/|V^{\prime }|$ separation is not a quantitative screened-strip width.^[ref]

A gated quantum dot is an electron island confined in all spatial directions, weakly coupled by tunnel barriers to source and drain and tuned by a plunger gate. Small capacitance makes charge addition costly, while confinement resolves orbital levels. In the constant-interaction model,The charging contribution to successive addition potentials is $e^2/C_{\Sigma }$; the often used charging-energy scale $E_C=e^2/(2C_{\Sigma })$ differs by a factor of two. Orbital spacing and spin filling add further structure.

For weak coupling, $k_{B}T$ and lifetime broadening must be smaller than the relevant addition energies to see Coulomb blockade. Sequential tunnelling proceeds when an addition level is inside the source-drain bias window and the appropriate charge states are accessible. A gate sweep gives conductance peaks near charge degeneracies and low conductance between them. A bias-versus-gate map shows Coulomb diamonds, with excited-state lines when additional levels enter the window. Their slopes and sizes depend on source, drain and gate capacitances and the bias convention. Cotunnelling gives higher-order transport inside nominally blocked regions; stronger coupling and many-body effects can invalidate the simple sequential picture.

Coherent dot states as a qubit. A single-electron spin has basis $|0⟩=|\uparrow ⟩$, $|1⟩=|\downarrow ⟩$ in a magnetic field, split by $E_Z=|g^{\ast }|{\mu }_{B}B$. A qubit is a controllable coherent state $a|\uparrow ⟩+b|\downarrow ⟩$, not just a pair of classical current levels. Initialize through spin-selective loading or relaxation; resonant magnetic or spin-orbit-assisted electrical driving produces rotations. Adjacent occupied dots can couple through a gate-controlled exchange interaction. In the weak-tunnel symmetric Hubbard limit,Local spin rotations combined with a suitable exchange entangling operation provide universal control in the ideal spin-qubit proposal. Gate pulses must avoid unwanted orbital excitation and leakage, and complete coherent operations before dephasing destroys the information.^[ref]

For measurement, place the reservoir electrochemical potential between Zeeman levels so that only one spin state can tunnel out, or use Pauli spin blockade in a double dot. A nearby quantum point contact or single-electron transistor detects the resulting charge change. Such spin-to-charge conversion makes transport useful for reading a spin even when the stored information is not itself a net current.^[ref]

A double dot can alternatively encode a charge qubit in left/right occupation, with Hamiltonian $H=(\epsilon {\sigma }_z+2t_c{\sigma }_x)/2$. It allows electrical control and charge sensing, but couples strongly to charge noise. Spin qubits also suffer hyperfine, electrical and spin-orbit-related noise, as well as relaxation and readout errors. An observed Coulomb diamond alone establishes charging physics, not initialization, coherent control or a functioning qubit.

An electrostatically defined quantum dot uses depletion gates to confine a small island laterally in a two-dimensional electron gas. Two narrow barriers allow weak tunnelling to source and drain; a plunger gate tunes the island's electrochemical levels, and additional gates can form a double quantum dot. Adjusting the gates resolves successive charge states and eventually reaches the single-electron regime. An electrical dot is defined by confinement and tunnel coupling, not simply by the drawn metal area.

In a constant interaction model,Here $Q_g$ is gate-induced charge and $C_{\Sigma }$ total island capacitance. Successive additions cost $E_{\mathrm{add}}=e^2/C_{\Sigma }+{ϵ}_{N+1}-{ϵ}_N$, with spin, exchange and correlations modifying the orbital term. Coulomb blockade appears when no allowed charge transition lies in the source–drain energy window. Gate sweeps give charge steps and transport peaks; finite-bias Coulomb diamonds constrain charging and orbital energies under a stated bias convention. Resolved single-electron operation requires thermal and tunnel broadening smaller than the relevant addition energies.

Quantum-dot charge sensing avoids relying on a measurable current through a nearly isolated dot. A nearby quantum point contact biased on a sensitive conductance slope, or a single-electron transistor, responds capacitively when one electron enters or leaves the dot. A time trace of sensor current can therefore distinguish $N$ from $N-1$ and resolve individual tunnelling events. The sensor measures charge; a spin-dependent step is needed to measure spin.

For one electron, Zeeman splitting gives a lower and a higher spin level separated by $E_Z=|g^{\ast }|{\mu }_B|B|$. In energy-selective spin readout, initialize an empty dot and pulse both levels below the reservoir chemical potential to load one electron. Then move to a readout configurationAn electron in the higher state can tunnel out, temporarily leaving the dot empty, after which a lower-state electron can refill it. An electron initially in the lower state remains trapped. The charge sensor records a pulse for the first outcome and no escape pulse for the second. This is spin-to-charge conversion; it measures the spin projection along the field through a state-dependent tunnelling probability. A primary single-shot experiment uses this conversion with a quantum-point-contact charge detector.^[ref]

The readout window must be long enough to detect escape but short compared with excited-spin relaxation:Detector bandwidth must also resolve the empty-state dwell time before refilling. Thermal activation, relaxation before escape, missed fast events and sensor backaction cause errors. Since the excited electron can leave and be replaced, this simple sequence does not preserve an arbitrary initial spin state.

For coupled dots, label charge occupation by $(n_L,n_R)$. Gate-controlled detuning can make $(1,1)$ and $(0,2)$ accessible. Two electrons in the lowest orbital of one dot must form a singlet state; a triplet state requires a different orbital or another higher-energy configuration. Choose a measurement window where the $(0,2)$ singlet is available but the $(0,2)$ triplet is not. Thenunder spin-conserving tunnelling. The second process is forbidden by spin symmetry and the Pauli exclusion principle, producing Pauli spin blockade. Charge sensing distinguishes transfer from a blocked $(1,1)$ state. This measures singlet versus triplet content; without a reference spin or additional control it is not a measurement of each electron's absolute spin direction separately.

The exchange interaction in a double quantum dot provides control of these states. In an effective spin description,For a symmetric weak-tunnelling two-site model with onsite charging cost $U$, $J\simeq 4t_c^2/U$. Gates change tunnel coupling $t_c$ and detuning, allowing preparation and evolution followed by a charge-conversion measurement. Spin mixing from local magnetic-field differences or spin-orbit effects can lift blockade, so the sensing interval must be chosen before unwanted relaxation obscures the initial state. Single-dot readout uses spin-dependent escape; double-dot readout can use spin-dependent charge transfer. In both cases the measurable signal is a resolved charge change.

A depleted potential hill inside a two-dimensional electron gas. In a strong perpendicular magnetic field, closed quantum Hall edge states circulate around it. Coupling these states to propagating edge channels can produce resonant backscattering; Coulomb blockade can substantially alter the single-particle resonance pattern.