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In December 1947, John Bardeen and Walter Houser Brattain obtained transistor action at Bell Telephone Laboratories. William Shockley proposed the distinct bipolar junction transistor within the following month.^[ref]

Their 1948 paper describes ground, etched germanium, initially also anodized and rinsed. Surface contacts separated by $50$–$250\mu \mathrm{m}$ share a broad base contact. Positive emitter biasing injects electron holes; negative collector biasing draws them toward the collector. An input signal changes emitter electric current, and a collector electrical load converts the resulting change into voltage.^[ref]

Early electric field control experiments gave unexpectedly weak responses. John Bardeen proposed that surface states screened the interior. Surface charge could create a barrier and a hole-rich semiconductor inversion layer. Replacing an electrolyte control with a gold contact reversed the response sign, suggesting electron hole carrier injection. Closely spaced contacts made from a gold-coated wedge split with a razor then enabled power gain. The relative importance of surface and bulk transport depended on preparation and collector forming.^[ref]

The 1948 authors found that collector-current increments could exceed emitter-current increments; their current gain depended on biasing.^[ref] A terminal-current ratio alone cannot identify the microscopic path. Surface states, the local barrier, carrier injection and contact preparation prevent a single ideal modern bipolar junction transistor model from explaining every point-contact transistor.

For the conventional electric current directions drawn in the figure, $I_E$ enters the emitter, $I_C$ leaves the collector and signed $I_B$ enters the base. Kirchhoff's current law requiresThus a local current gain $\alpha >1$ requires an accompanying base-current change. The collector increment is not simply a count of injected electron holes, and it does not violate electric charge conservation.

For an experiment following the functional arrangement, first establish each contact's separate current-voltage characteristic relative to the base. Then hold collector biasing fixed, vary a small emitter signal, and compare the collector electrical load voltage with the input. A decisive power gain check measures both input electric current and voltage and the output power in a known electrical load; voltage enlargement alone is insufficient. These are proposed measurement controls, not additional claims about the 1947 laboratory record.

Repeating a setting tests drift; reversing or removing emitter biasing tests whether the response requires carrier injection. Contact motion, surface contamination, temperature, direct electrical coupling and noise can all affect the inference. A small-signal model describes measured local terminal response without deciding every microscopic mechanism.

A point-contact transistor has two closely spaced rectifying contacts, the emitter and collector, and a third low-electrical resistance base contact to the semiconductor. The Bardeen-Brattain point-contact transistor experiment established amplification using this arrangement. It does not require two fabricated bulk p-n junctions.

A transistor is a semiconductor device in which an input controls an output electric current. Used with biasing and an electrical load, it can form an electronic amplifier or a switch. Its power gain comes from an external supply: the input signal controls the conversion of supplied energy into output signal power.

The point-contact transistor makes the idea tangible: two nearby contacts interact through one piece of semiconductor. A bipolar junction transistor instead uses two p-n junctions and a thin intervening region. The distinction matters both for the history and for choosing a physical model.

An original teaching model exposes the roles of input loading, output loading and the supply. Choose a small-signal model with positive input electrical resistance $r_i$, transconductance $g_m>0$, and output electrical resistance $r_o>0$. Its controlled output current source draws $g_m{v}_i$ from the output node toward the reference node. This chosen sign gives an inverting voltage gain; it is not the historical contact circuit's sign convention.

Assume a fixed operating point, negligible reverse coupling, a frequency range where coupling capacitors pass the signal, and negligible other capacitances and transit delays. A collector resistor $R_D$ connects the output to a steady ideal supply $V_{DD}$; an external electrical load $R_L$ is coupled through a capacitor, so it draws no direct current. The input source has series electrical resistance $R_s$. All voltages below are small departures from the operating point. An ideal fixed supply has zero incremental voltage and therefore becomes the reference node in the small-signal model.

Define $R_O=R_D\parallel r_o$ and $R_P=R_O\parallel R_L$, where $a\parallel b=ab/(a+b)$. Input voltage division and output Kirchhoff's current law giveConsequently the port voltage gain, overall source-to-output voltage gain, and load current gain magnitudes areThis current gain uses load electric current, not all the controlled-source electric current. It is also a different port definition from the historical emitter-to-collector current gain. Larger $R_s$ attenuates the input; smaller $R_L$ attenuates the output.

For a sinusoid input signal, use root mean square voltages. The power gain from accepted input signal power $P_i=v_i^2/r_i$ to useful load power $P_L=v_o^2/R_L$ isUnlike $|A_i|$, this tends to zero as either $R_L\to 0$ or $R_L\to \infty$. Differentiation givesThus matching the output electrical load maximizes delivered power in this unilateral resistive model. For fixed source voltage, input loading multiplies $P_L$ by $[r_i/(R_s+r_i){]}^2$; the accepted-input power gain above excludes the loss in $R_s$.

Choose $r_i=R_s=1\mathrm{k\Omega }$, $g_m=2\mathrm{mS}$, $r_o=20\mathrm{k\Omega }$, and $R_D=2\mathrm{k\Omega }$. Then $R_O=20/11\mathrm{k\Omega }$. With $R_L=2\mathrm{k\Omega }$ and $v_s=20\mathrm{mV}$ root mean square, the input is $10\mathrm{mV}$ and the inverted output has magnitude $19.0476\mathrm{mV}$ root mean square. Hence $P_i=0.100\mu \mathrm{W}$ and $P_L=0.181406\mu \mathrm{W}$: $G_P=1.81406$. These are calculated values of the chosen model, not historical measurements.

With the same parameters but $R_L=100\Omega$, $|A_i|=1.89573$ while $G_P=0.359381<1$. At $R_L=10\mathrm{k\Omega }$, $|A_v|=3.07692$ while $G_P=0.946746<1$. Neither current gain nor voltage gain alone establishes power gain.

For the direct current load line in the figure, choose $V_{DD}=6\mathrm{V}$, $I_Q=1\mathrm{mA}$ and $V_Q=4\mathrm{V}$, consistent with $V_Q=V_{DD}-R_D{I}_Q$. Locally extend the model as $I=I_Q+g_m{v}_i+(V-V_Q)/r_o$. With the external electrical load isolated at direct current, its intersection with $I=(V_{DD}-V)/R_D$ is $V=V_Q-g_m{R}_O{v}_i$. Keeping $|v_o|$ small compared with the available voltage headroom is essential; extrapolation to arbitrarily large signals would be unphysical.

At the chosen operating point the collector supply delivers $V_{DD}{I}_Q=6\mathrm{mW}$: $2\mathrm{mW}$ is dissipated in $R_D$ and $4\mathrm{mW}$ in the output device. Under a small signal, that energy flow is redistributed to provide load power. The incremental controlled current source hides the supply's steady energy flow; it does not create energy. A real complete amplifier also needs its input biasing network and has further losses. This calculation establishes neither its total efficiency nor a universal law for point-contact transistors.