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In quasi-one-dimensional quantum transport, transverse confinement makes discrete subbands while motion along a quantum wire remains continuous. Only occupied propagating subbands conduct. For elastic scattering between equilibrated reservoirs, the Landauer formula isThe sum explicitly counts spin. A perfectly transmitting spin-degenerate subband gives $2e^2/h$ at low temperature; a quantum point contact shows steps as a gate opens additional subbands. The one-dimensional density of states cancels the carrier velocity in the current, giving a conductance quantum rather than a material-dependent velocity factor. Finite two-terminal contact resistance remains even without internal scattering.

Transport is ballistic transport for length $L\ll \ell$, where $\ell$ is the mean free path. In a multichannel wire with $\ell \ll L$ below its localization length, scattering reduces transmission and gives approximately Ohmic behaviour. If the phase coherence length exceeds the sample length, amplitudes interfere; weak localization and sample-dependent universal conductance fluctuations can appear. At greater lengths, generic coherent disordered wires undergo Anderson localization, with localization length of order the channel number times $\ell$, up to symmetry-dependent factors. Thermal averaging and dephasing smear the quantum features.

Strong interactions require more than independent-electron transmission. A clean single-channel interacting wire is described at low energy by a Luttinger liquid, with collective modes and possible spin-charge separation; impurities can generate temperature-dependent power laws. Ideal contacts to noninteracting leads can still fix the two-terminal conductance of a clean wire, so it must not automatically be multiplied by a bulk Luttinger parameter.

A GaAs–AlGaAs semiconductor heterostructure confines electrons normal to the interface in a semiconductor quantum well. Remote modulation doping supplies a high-mobility two-dimensional electron gas. Negative split gates deplete it laterally, leaving a narrow quantum point contact with discrete transverse subbands and continuous longitudinal momentum. A single occupied subband requires transverse excitation gaps larger than thermal and applied-bias energies.

Take $e>0$ and count one spin-resolved channel. In a length $L$, right-moving states have density $Ldk/(2\pi )$; each contributes charge current $-e{v}_k/L$. ThusThe second expression is the right reservoir's left-moving contribution expressed in the same left-to-right conventional-current sign. Since $v_{k}dk=dE/\hslash$,The limit needs $k_{B}T,|eV|\ll \mu -E_0$ and ballistic transport. Velocity cancels the one-dimensional state density. Two degenerate spin channels give $2e^2/h$, not an extra factor hidden in the quoted single-channel result.

For elastic phase-coherent scattering, expand each incident flux-normalized mode in outgoing lead modes. Its transmitted fraction is $|(t_E{)}_{nm}{|}^2$; sum over all open outgoing $n$ and occupied incident $m$. Linearizing the reservoir occupations gives the Landauer formulaThe source's $T_E^{+}$ denotes this amplitude matrix, not temperature or a probability matrix. Flux normalization is essential: ordinary wave-amplitude ratios need a velocity factor. Reservoirs equilibrate, contacts supply incoming Fermi distributions, and inelastic processes within the channel are neglected. Spin is included among channel labels. At $T\to 0$, only transmissions at $\mu$ contribute; perfect channels each add one quantum. This is a two-terminal conductance including contact resistance, even with no internal backscattering.

Trace I has steps near integer $2e^2/h$ as less-negative gate voltage opens successive spin-degenerate subbands. At the printed parallel field $11\mathrm{T}$, Zeeman splitting separates the two spin thresholds, allowing approximately half-sized steps in the plotted units; the onset also shifts. Thermal broadening, imperfect transmission and unresolved thresholds round the plateaux. A parallel field primarily resolves spin in the ideal thin-interface model; finite layer thickness can also shift subband energies. The plot alone does not determine a unique effective $g$ factor or microscopic disorder model.

This is transverse magnetic focusing. The depleted gates form reflecting boundaries and two constrictions. A narrow quantum point contact collimates carriers into cyclotron trajectories with cyclotron radius $r_c=m^{\ast }{v}_F/(e|B|)=\hslash k_F/(e|B|)$. When an integer number of semicircular skipping arcs links the two openings, the collector couples particularly strongly to the injector population. A floating voltage contact then changes its electrochemical potential to satisfy zero net current, producing a peak in the measured nonlocal voltage. Sweeping the field changes the arc diameter, moving the focused population into or away from the collector.

The connection condition is $L=2j{r}_c$ for integer $j\ge 1$, with the higher orders requiring specular reflections. The effect needs ballistic electron transport, sufficiently narrow openings and a smooth boundary. Electron phase coherence can add interference structure, but the basic geometrical focusing condition is semiclassical.^[ref]

There is a polarity qualification in the printed geometry. The electron charge is negative: for a field out of the page, an electron launched upward through the left opening bends left, not toward the right opening. A direct left-opening-to-right-opening focusing path in the upper region therefore requires the field into the page; the printed outward field supports the reverse connection. Reversing conventional current reverses the occupation perturbation and voltage sign, but does not reverse the curvature of an individual electron. Thus the standard injector-to-collector explanation describes the focusing mechanism, while the asserted signed voltage increase requires a consistent field/lead convention. The calculated results below are peak-field magnitudes; taking outward field positive gives negative fields for direct left-to-right electron injection.

A single gate-defined dot can trap one electron whose lower and upper Zeeman states define $|0⟩,|1⟩$. Initialize by energy-selective loading or relaxation, coherently rotate the spin with a resonant magnetic drive or electrically generated spin-dependent drive, and use neighbouring-dot exchange interaction for two-qubit operations. The dot supplies confinement; a full qubit also requires control, coherence and calibrated readout. A nearby quantum point contact or single-electron transistor detects charge capacitively, so spin-to-charge conversion is needed.

In energy-selective spin readout, set the reservoir chemical potential between the two spin-dependent removal energies. The upper state can tunnel out; the lower remains. Reloading can create a temporary empty-dot signal that a time-resolved charge detector records. Resolving this window requires sufficiently small electron-temperature broadening and stable level alignment. The escape should be faster than spin relaxation, but the empty interval must remain long enough for detection. Useful controls include known-state preparation, sensor-noise measurement, varied waiting time and readout pulses, and checks for missed events or thermally activated false escape.^[ref]

tunnel-rate-selective spin readout instead places both candidate removal energies on the allowed side of the reservoir and uses different escape rates ${\Gamma }_f\gg {\Gamma }_s$. After a window $\tau$ with ${\Gamma }_f^{-1}\ll \tau \ll {\Gamma }_s^{-1}$, the fast state has usually changed charge while the slow state has not. It does not require the reservoir Fermi edge to resolve the state splitting, although it still requires controlled charge occupation, substantial rate contrast and relaxation slower than the mapping. The contrast must have a physical origin. A demonstrated single-dot implementation uses two-electron singlet and triplet states: Pauli symmetry puts the triplet's second electron in a higher orbital with stronger lead coupling. Nearly degenerate states can then be distinguished by rate rather than by their energy difference.^[ref]

For a bare one-electron Zeeman pair in the same orbital with an unpolarized lead, different tunnel rates are not automatic. A spin-selective barrier/reservoir or another spin-dependent mechanism is needed. The two-electron singlet/triplet example is a different state encoding/readout arrangement, not evidence that the bare single-electron pair already has useful rate contrast.

For the optimal tunnel-rate readout time, assume no relaxation and equal prior probabilities. The fast-state missed-event probability is $e^{-{\Gamma }_f\tau }$ and the slow-state false-event probability is $1-e^{-{\Gamma }_s\tau }$. Their average is minimized atFinite detector bandwidth, preparation errors, state relaxation and unwanted reloading alter this optimum. energy selection is direct for a resolved single-electron spin but sensitive to the narrow alignment window; rate selection has a wider energy operating window but requires engineered rate contrast and a carefully timed charge measurement. Neither method is an ideal nondestructive spin measurement merely because the charge sensor itself is noninvasive.

A trajectory-resolving ballistic experiment. Use a high-mobility modulation-doped GaAs-AlGaAs heterostructure with a two-dimensional electron gas. Grow the layers by molecular-beam epitaxy, separate the donor layer from the conducting interface with an undoped spacer, and pattern an isolated mesa with ohmic reservoir contacts. Electron-beam lithography defines metal split gates; negative gate voltage depletes the underlying electron gas, leaving narrow adjustable injector and collector quantum point contacts along an edge. Keep the relevant path shorter than the momentum-relaxation mean free path, cool to suppress phonon scattering and thermal smearing, and use a small excitation to avoid heating.

Inject a low-frequency current through one contact to a distant drain and measure the collector's open-circuit voltage with a high-input-impedance amplifier. Sweep perpendicular magnetic field and gate settings. The cyclotron radius is $r_c=\hslash k_F/(e|B|)$, with $k_F=\sqrt{2\pi n_s}$ for a spin-degenerate single-valley gas. For contact separation $L$, semicircular or skipping trajectories focus into the collector whenThe appropriate field sign bends carriers toward the collector; the opposite sign suppresses the peaks. Density-dependent focusing positions, suppression with increased scattering and reproducible gate control distinguish directional ballistic propagation from an ordinary diffusive voltage. Quantum interference may add fine structure, but the basic focusing signal does not require phase coherence over every path. Split-gate injection and collection in a two-dimensional gas were directly demonstrated in the original focusing experiment.^[ref]

Multi-probe current bookkeeping. For one directed spin-resolved mode, velocity times one-dimensional density of states gives a particle flux $dE/h$. A small reservoir electrochemical-energy shift ${\mu }_j$ therefore supplies excess flux ${\mu }_j/h$. Let $N_i$ be the number of propagating modes at lead $i$, $R_{ii}$ their summed return probability, and $T_{ij}$ the total transmission from reservoir $j$ into lead $i$. Multiplying outgoing-minus-incoming electron flux by charge $-e$ gives the source's convention,The reservoirs equilibrate arriving carriers; an ideal voltage probe adjusts its chemical potential until its net current vanishes. Here ${\mu }_i$ is an energy, not a voltage. Choose the lead-voltage convention ${\mu }_i=-e{V}_i$ and positive conventional current injected into the junction. The working equation is thenConservation of scattering probability and gauge invariance require both column and row balance: every outgoing channel is accounted for and equal voltages give zero current. The counts $M,N$ below include every occupied internal channel; an extra factor of two must not be inserted if spin is already counted. If one instead counts orbital channels with unresolved spin degeneracy, double all transmission counts consistently.

Zero-field routing. The original diagram labels lead 1 at the left, 2 above, 3 at the right and 4 below. With columns denoting injectors and rows collectors, straight-through ballistic routing and the stipulated excess-wide-channel rule giveThere is no reflection in this ideal routing model. Set $V_4=0$, $I_2=I_3=0$, and $I_1=I=-I_4$. The two probe equations giveThusThe derivation assumes $N>M>0$. At $N=M$, the ideal network splits into two disconnected opposite-lead pairs and cannot carry the imposed 1-to-4 current at finite voltage; the divergence diagnoses failure of that limiting transport configuration, not an infinite dissipative resistance of each channel. Negative bend resistance is a nonlocal voltage sign, compatible with positive total dissipated power.

Positive field. At $+B_0$, left-deflected incoming carriers go $1\to 2$, $2\to 3$, $3\to 4$. Lead 4 supplies $M$ modes to narrow lead 1; the remaining $N-M$ enter wide lead 3. The balanced transmission matrix isTherefore $V_2=V_1$, $V_3=M{V}_1/N$ and $I=g_{0}M{V}_1$, givingNegative field. Reversing the chirality gives ${\mathsf{T}}_{-}={\mathsf{T}}_{+}^{\mathsf{T}}$, as expected from reciprocity for this spin-independent routing model. With $V_4=0$, the zero-current conditions become $V_3=V_4=0$ and $V_2=V_3=0$. ThusThis does not contradict reciprocity: the general relation interchanges the current and voltage lead pairs when reversing field; it does not require the same fixed-contact four-terminal resistance to be even in $B$.

Comparison with the measured trace. The PDF shows a negative region around zero field, approximately zero signal at sufficiently negative field, and a positive rising resistance near $+0.4\mathrm{T}$ and above. These signs match the three routing limits. Near zero field the depth is roughly a few tenths of a kilohm; the graph does not supply $M,N$, so there is no justified exact amplitude fit. Rounded corners, collimation and finite cyclotron radius continuously change which outgoing lead is reached between the ideal limits. Skipping trajectories and geometrical focusing can produce shoulders or resonances. At larger positive fields magnetic depopulation and spin resolution can change the mode counts, increasing the positive resistance or producing structure; disorder, incomplete equilibration and finite temperature round ideal features. These are candidate mechanisms, not uniquely established assignments of every small feature from one trace.

A gated quantum dot is an electron island confined in all spatial directions, weakly coupled by tunnel barriers to source and drain and tuned by a plunger gate. Small capacitance makes charge addition costly, while confinement resolves orbital levels. In the constant-interaction model,The charging contribution to successive addition potentials is $e^2/C_{\Sigma }$; the often used charging-energy scale $E_C=e^2/(2C_{\Sigma })$ differs by a factor of two. Orbital spacing and spin filling add further structure.

For weak coupling, $k_{B}T$ and lifetime broadening must be smaller than the relevant addition energies to see Coulomb blockade. Sequential tunnelling proceeds when an addition level is inside the source-drain bias window and the appropriate charge states are accessible. A gate sweep gives conductance peaks near charge degeneracies and low conductance between them. A bias-versus-gate map shows Coulomb diamonds, with excited-state lines when additional levels enter the window. Their slopes and sizes depend on source, drain and gate capacitances and the bias convention. Cotunnelling gives higher-order transport inside nominally blocked regions; stronger coupling and many-body effects can invalidate the simple sequential picture.

Coherent dot states as a qubit. A single-electron spin has basis $|0⟩=|\uparrow ⟩$, $|1⟩=|\downarrow ⟩$ in a magnetic field, split by $E_Z=|g^{\ast }|{\mu }_{B}B$. A qubit is a controllable coherent state $a|\uparrow ⟩+b|\downarrow ⟩$, not just a pair of classical current levels. Initialize through spin-selective loading or relaxation; resonant magnetic or spin-orbit-assisted electrical driving produces rotations. Adjacent occupied dots can couple through a gate-controlled exchange interaction. In the weak-tunnel symmetric Hubbard limit,Local spin rotations combined with a suitable exchange entangling operation provide universal control in the ideal spin-qubit proposal. Gate pulses must avoid unwanted orbital excitation and leakage, and complete coherent operations before dephasing destroys the information.^[ref]

For measurement, place the reservoir electrochemical potential between Zeeman levels so that only one spin state can tunnel out, or use Pauli spin blockade in a double dot. A nearby quantum point contact or single-electron transistor detects the resulting charge change. Such spin-to-charge conversion makes transport useful for reading a spin even when the stored information is not itself a net current.^[ref]

A double dot can alternatively encode a charge qubit in left/right occupation, with Hamiltonian $H=(\epsilon {\sigma }_z+2t_c{\sigma }_x)/2$. It allows electrical control and charge sensing, but couples strongly to charge noise. Spin qubits also suffer hyperfine, electrical and spin-orbit-related noise, as well as relaxation and readout errors. An observed Coulomb diamond alone establishes charging physics, not initialization, coherent control or a functioning qubit.

A quantum point contact is made by using negative surface split gates to leave a short narrow channel in a clean two-dimensional electron gas. Its length should be smaller than the transport mean free path; transverse confinement should be strong enough that subband spacing exceeds thermal and lifetime broadening. Low-resistance Ohmic contacts connect large reservoirs. Apply a small source–drain bias, measure current and differential conductance, and sweep the gate to change the channel width or barrier height. Contact and wiring series resistance must be accounted for when comparing plateau values.

The Landauer formula explains the conductance without treating the short channel as a diffusive wire. For each propagating one-dimensional mode, the density of states and group velocity cancel in the incident flux, leaving $e/h$ per spin per energy interval. The reservoir occupation difference supplies the net current:The factor two assumes unresolved spin degeneracy. In zero-temperature linear response,A well-transmitted channel has $T_n\simeq 1$, giving steps $G=N(2e^2/h)$ as modes open. A finite two-terminal resistance persists even for a perfectly ballistic channel because reservoirs inject only a finite number of modes; it is not evidence of resistive scattering inside the channel. Gate-controlled point-contact conductance quantization was demonstrated in a two-dimensional electron gas.^[ref]

The saddle-point model of a quantum point contact resolves how modes open. Near the bottleneck, choose the channel direction as $x$ and writeTransverse harmonic confinement gives barrier tops $E_n=U_0+\hslash {\omega }_y(n+1/2)$. Scattering through the inverted longitudinal harmonic barrier givesSmall longitudinal curvature makes a sharp transmission threshold compared with the transverse subband spacing; finite curvature rounds each conductance step. This is the explicit smooth-barrier model developed for a saddle constriction.^[ref]

At larger source–drain bias, the current samples a finite energy window. For a rigid transmission spectrum at zero temperature,With symmetric bias, ${\mu }_{S,D}=E_F\pm eV/2$, the nonlinear conductance of a quantum point contact isIf both window edges sample $N$ open modes, the usual plateau remains. If one edge samples $N+1$ and the other $N$, differential conductance approaches $(N+1/2)(2e^2/h)$: a half-integer plateau relative to the zero-bias step. It is a bias-window effect, not half an electron spin degeneracy. Ridges in gate–bias transconductance occur when a reservoir chemical potential crosses a subband threshold; their separations can measure subband energies.

The half-plateau expression assumes symmetric bias and an approximately bias-independent barrier. An asymmetric voltage drop or self-consistent shift of $U_0$ changes the numerical relation. At still larger biases, heating and inelastic scattering can invalidate a rigid elastic saddle model. Thus the zero-bias quantization counts transmitted modes, while nonlinear spectroscopy compares mode counts at the two ends of the bias window.

An electrostatically defined quantum dot uses depletion gates to confine a small island laterally in a two-dimensional electron gas. Two narrow barriers allow weak tunnelling to source and drain; a plunger gate tunes the island's electrochemical levels, and additional gates can form a double quantum dot. Adjusting the gates resolves successive charge states and eventually reaches the single-electron regime. An electrical dot is defined by confinement and tunnel coupling, not simply by the drawn metal area.

In a constant interaction model,Here $Q_g$ is gate-induced charge and $C_{\Sigma }$ total island capacitance. Successive additions cost $E_{\mathrm{add}}=e^2/C_{\Sigma }+{ϵ}_{N+1}-{ϵ}_N$, with spin, exchange and correlations modifying the orbital term. Coulomb blockade appears when no allowed charge transition lies in the source–drain energy window. Gate sweeps give charge steps and transport peaks; finite-bias Coulomb diamonds constrain charging and orbital energies under a stated bias convention. Resolved single-electron operation requires thermal and tunnel broadening smaller than the relevant addition energies.

Quantum-dot charge sensing avoids relying on a measurable current through a nearly isolated dot. A nearby quantum point contact biased on a sensitive conductance slope, or a single-electron transistor, responds capacitively when one electron enters or leaves the dot. A time trace of sensor current can therefore distinguish $N$ from $N-1$ and resolve individual tunnelling events. The sensor measures charge; a spin-dependent step is needed to measure spin.

For one electron, Zeeman splitting gives a lower and a higher spin level separated by $E_Z=|g^{\ast }|{\mu }_B|B|$. In energy-selective spin readout, initialize an empty dot and pulse both levels below the reservoir chemical potential to load one electron. Then move to a readout configurationAn electron in the higher state can tunnel out, temporarily leaving the dot empty, after which a lower-state electron can refill it. An electron initially in the lower state remains trapped. The charge sensor records a pulse for the first outcome and no escape pulse for the second. This is spin-to-charge conversion; it measures the spin projection along the field through a state-dependent tunnelling probability. A primary single-shot experiment uses this conversion with a quantum-point-contact charge detector.^[ref]

The readout window must be long enough to detect escape but short compared with excited-spin relaxation:Detector bandwidth must also resolve the empty-state dwell time before refilling. Thermal activation, relaxation before escape, missed fast events and sensor backaction cause errors. Since the excited electron can leave and be replaced, this simple sequence does not preserve an arbitrary initial spin state.

For coupled dots, label charge occupation by $(n_L,n_R)$. Gate-controlled detuning can make $(1,1)$ and $(0,2)$ accessible. Two electrons in the lowest orbital of one dot must form a singlet state; a triplet state requires a different orbital or another higher-energy configuration. Choose a measurement window where the $(0,2)$ singlet is available but the $(0,2)$ triplet is not. Thenunder spin-conserving tunnelling. The second process is forbidden by spin symmetry and the Pauli exclusion principle, producing Pauli spin blockade. Charge sensing distinguishes transfer from a blocked $(1,1)$ state. This measures singlet versus triplet content; without a reference spin or additional control it is not a measurement of each electron's absolute spin direction separately.

The exchange interaction in a double quantum dot provides control of these states. In an effective spin description,For a symmetric weak-tunnelling two-site model with onsite charging cost $U$, $J\simeq 4t_c^2/U$. Gates change tunnel coupling $t_c$ and detuning, allowing preparation and evolution followed by a charge-conversion measurement. Spin mixing from local magnetic-field differences or spin-orbit effects can lift blockade, so the sensing interval must be chosen before unwanted relaxation obscures the initial state. Single-dot readout uses spin-dependent escape; double-dot readout can use spin-dependent charge transfer. In both cases the measurable signal is a resolved charge change.

Detection of a dot's charge through its capacitive influence on a nearby quantum point contact or single-electron transistor. Discrete charge changes shift the sensor response, allowing individual tunnel events to be resolved even when direct current through the dot is too small to measure.

A conducting scanning-probe tip acts as a movable electrostatic gate. Mapping conductance changes as the tip perturbs a quantum point contact or surrounding electron gas probes quantum transport. The image is a response to the tip, not automatically a noninvasive map of the unperturbed local current density.