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At equilibrium, electrons initially diffuse from the n side and holes from the p side. Recombination leaves ionized donors and acceptors in a depletion region, producing an internal electric field and band bending. The Fermi level is constant across the equilibrium p-n junction. With p material on the left, both band edges lie higher on the p side, as in the left panel.

Forward bias, with the p side positive relative to n, reduces the injection barrier. Electrons and holes enter the junction region and can recombine radiatively, emitting photons with energy close to the band gap. Under bias, separate electron and hole quasi-Fermi levels replace a single equilibrium Fermi level.

Both GaN polymorphs have a direct band gap, so a conduction-band electron and valence-band hole can recombine without a large crystal-momentum change. Silicon and germanium have indirect band gaps, requiring phonon assistance for near-edge radiative recombination, which makes efficient band-edge light emission much harder. A direct gap enables the process; defects, carrier confinement and competing nonradiative channels still determine device efficiency.

A forward-biased p-n junction injects electrons from its n-type semiconductor and electron holes from its p-type semiconductor into an active region. A direct band gap allows radiative transitions without a compensating phonon, so stimulated emission can compete effectively with nonradiative processes. At thermal equilibrium there is one Fermi level; forward injection instead establishes separate electron and valence-electron quasi-Fermi levels $F_c$ and $F_v$. Sufficient injection makes conduction states more occupied than the corresponding valence states, producing optical gain.

Two parallel cleaved facets supply an optical resonator. At normal incidence their approximate intensity reflectance follows the Fresnel equations:A resonant normal mode grows when its round-trip amplification exceeds its losses. For length $L$, material optical gain $g$, overlap factor $\Gamma$, internal intensity loss ${\alpha }_i$ and facet reflectances $R_1,R_2$,The pump supplies the emitted energy; the facets provide feedback and let some output escape. Positive optical gain alone does not establish laser threshold.

A quasi-Fermi level is the chemical potential parameter of an approximately thermalized carrier population within one energy band. Rapid intraband scattering can establish a Fermi-Dirac distribution in each energy band before slower interband recombination equilibrates their populations. Thus separate $E_{\mathrm{Fc}}$ and $E_{\mathrm{Fv}}$ describe a pumped population inversion even though the entire semiconductor is far from thermal equilibrium.

At a common positive temperature, the Fermi-Dirac distribution is strictly decreasing in $E-E_F$. ConsequentlyThe joint density of states is nonzero only above the band gap, soIn particular the quasi-Fermi-level splitting must exceed $E_g$. The upper boundary is transparency, where stimulated emission balances absorption; the lower boundary has zero joint density of states in this ideal three-dimensional parabolic model. The strict occupation comparison uses $T>0$; at exactly zero temperature occupations become step functions, and their supports should be checked explicitly, as in the next part.

Across a radial section, the narrow-gap indium gallium nitride layer lies between wider-gap n-GaN and p-GaN. A suitable type-I band alignment has a downward conduction-band offset and upward valence-band offset in the indium gallium nitride, confining electrons and holes to the active layer. The original band sketch isolates those offsets; the complete junction also has doping-induced band bending.

At thermal equilibrium the Fermi level is common throughout. Forward bias separates the electron and hole quasi-Fermi levels, injects carriers from the n- and p-regions and permits electron-hole recombination in the thin active layer. A full radial line through the wire crosses two copies of the shell well; a core-to-exterior radial coordinate crosses one.

The 5 nm indium gallium nitride shell is the quantum well active region, not a metallic contact. Finite band offsets, confinement and polarization fields affect its transition energy; the bulk gap alone is insufficient.

A plausible role for the SiN mask is selective-area growth: restrict nucleation to exposed windows and suppress parasitic deposition between wires. Retained insulating material can also help prevent unwanted electrical paths during later processing. Which role dominates depends on the actual fabrication sequence. The cited source concerns core-shell single-wire LEDs and contact engineering, so a qualitative band sketch does not reproduce its complete device model.^[ref]

Absorption generates electrons and holes in the perovskite. After relaxation toward the band edges, their nonequilibrium populations are described by separate electron and hole quasi-Fermi levels. Selective contacts collect electrons through an electron-transport layer and holes through a hole-transport layer, while suppressing the opposite carriers.

For ideal contacts at open circuit,This quasi-Fermi-level splitting is not the band gap itself or simply the equilibrium built-in voltage. At equilibrium there is one common Fermi level and no extractable photovoltage. Under illumination at open circuit, generation is balanced by recombination while a nonzero population splitting persists.

Important parasitic paths include trap-assisted Shockley-Read-Hall recombination in the bulk, at grain boundaries and at interfaces, and recombination at poorly selective contacts. They lower the steady carrier populations and their quasi-Fermi splitting. Auger recombination can matter at high carrier densities but need not dominate an ordinary one-sun device. Radiative recombination is an unavoidable detailed-balance contribution, rather than an avoidable defect loss of the same kind.

An approximate illuminated diode relation isIncreased nonradiative recombination generally increases the dark recombination current and reduces $V_{\mathrm{OC}}$; it can also change ideality and fill factor. Shunts add a leakage path. Series resistance mainly reduces voltage under load and fill factor: its simple $I{R}_s$ drop vanishes at zero terminal current, so it should not be invoked as an automatic direct subtraction from open-circuit voltage.

forward bias injects electrons and holes into a common active region. Their electron-hole recombination can emit a photon as an electron falls from a conduction-band state into an empty valence-band state, with $h\nu$ approximately the band gap $E_g$ near the band edges. A direct band gap makes this radiative transition much more probable than an indirect gap requiring simultaneous phonon participation. Carrier confinement improves their overlap; nonradiative recombination and photon trapping reduce the external efficiency. This is spontaneous electroluminescence and does not require population inversion. The biased carriers have separate quasi-Fermi levels, rather than one global equilibrium Fermi level. The band-diagram downward arrow shows photon emission. As a concrete implementation, an InGaN/AlGaN double heterostructure was used for a bright blue junction LED.^[ref]

A solar cell uses the photovoltaic effect to turn photon energy into electrical work. In a semiconductor, above-gap photon absorption generates an electron in the conduction band and an electron hole in the valence band. A p-n junction, together with selective electrical contacts, collects the two carrier species at opposite terminals. Carrier diffusion and the built-in electric field help separate them before electron-hole recombination. Illumination maintains different quasi-Fermi levels for electrons and electron holes; their splitting, divided by $e$, sets the available terminal voltage in an ideal device. The equilibrium built-in potential alone cannot continuously deliver work.

For an ideal junction, the illuminated output current density isHere $J_{\mathrm{sc}}$ is the photogenerated short-circuit current density and $J_0$ the diode saturation current. The useful operating point maximizes $VJ$, rather than either current or voltage separately. With solar-cell fill factor $\mathrm{FF}=P_{\max }/(V_{\mathrm{oc}}{I}_{\mathrm{sc}})$,Series resistance, shunts, incomplete photon absorption and nonradiative recombination reduce the attainable efficiency.

The Shockley-Queisser limit removes these avoidable losses but retains the following physical constraints. There is one semiconductor junction with one band gap; each absorbed above-gap photon yields at most one collected electron-hole pair; carriers thermalize to the cell temperature; and the inverse optical process produces unavoidable radiative recombination. If ${\Phi }_{\odot }(E)$ is the incident photon flux per unit energy, ideal photon absorption givesThe same ability to absorb light requires the junction to emit it. At a forward voltage $V$, the emitted photon population has a chemical potential $eV$; in the ordinary nondegenerate limit the resulting recombination current is the exponential diode term above. Maximizing $VJ$ with this radiative $J_0$, and then choosing $E_g$, gives the limiting efficiency.

A small band gap collects many photons but gives a low voltage and large thermalization losses. A large band gap permits a larger voltage but transmits too much of the incident spectrum. Below-gap photons are lost to transmission, excess photon energy above the gap becomes heat, and radiative emission and its associated entropy loss keep $e{V}_{\mathrm{oc}}$ below $E_g$. The optimum single-junction conversion is roughly thirty percent under ordinary unconcentrated sunlight; the precise ceiling depends on spectrum, cell temperature and optical geometry. The original detailed-balance calculation gave about $30\%$ at $E_g\simeq 1.1\mathrm{eV}$ under its specified assumptions.^[ref] Multiple junctions and optical concentration change the assumptions and consequently change the bound.

At equilibrium, majority electrons undergo diffusion from n to p, while majority electron holes diffuse from p to n. Their departure exposes positive donors on the n side and negative acceptors on the p side. The resulting electric field points from n to p and opposes further diffusion. Equilibrium is reached when the chemical potential is constant across the junction. The built-in potential is this electrostatic adjustment, not a discontinuity of the material's band gap.

Since electronic band energies shift by $-eV(x)$, both the conduction band and valence band undergo band bending down from p to n by $e{V}_b$ at zero applied bias. Their separation remains the same gap. In the nondegenerate thermal equilibrium limit the built-in voltage can also be expressed using neutral-edge densities as $e{V}_b=k_{B}T\log (n_n/n_p)=k_{B}T\log (n_n{p}_p/n_i^2)$.

Take the n-contact potential and its electrochemical potential as reference. Applying $V_{\mathrm{ext}}$ to the p side changes the total depletion-layer drop toThus $V_{\mathrm{ext}}<0$ is reverse bias: it increases the barrier and widens the depletion region. The bands have horizontal tangents at the neutral edges in this approximation and a smooth cubic bend within the linearly graded layer.

A biased junction is not in global thermal equilibrium. Its contact electron electrochemical potentials obeyUnder reverse bias the p-contact level is higher by $e|V_{\mathrm{ext}}|$. A single horizontal equilibrium chemical potential cannot describe this state; electron and hole quasi-Fermi levels describe the nonequilibrium populations. The sketch marks the contact levels. Detailed spatial quasi-Fermi profiles require transport and recombination information beyond the electrostatic doping profile.

The photovoltaic effect is the production of an electric potential difference or an electric current by photon absorption in a material or device. In a semiconductor, absorbed photons generate electrons and electron holes; asymmetric transport and selective collection can maintain distinct quasi-Fermi levels and deliver electrical power to a load. An equilibrium built-in potential alone supplies no continuous electrical power.

A quasi-Fermi level is a local electron or hole population parameter in a semiconductor driven out of equilibrium, assuming each population is internally close enough to thermal equilibrium to use a Fermi-Dirac distribution. Separate electron and hole parameters replace one common equilibrium chemical potential. Their spatial profiles depend on transport, generation and recombination as well as electrostatics. For ideal ohmic contacts with the p voltage $V$ relative to n, the contact electron electrochemical potentials obey ${\mu }_p-{\mu }_n=-eV$.

The difference between electron and hole quasi-Fermi levels under nonequilibrium conditions. For ideal selective contacts their terminal separation sets $qV$; poor contacts can lose part of the internal splitting.