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Band curvature is the Hessian matrix of an energy band as a function of wavevector. Dividing it by ${\hslash }^2$ gives the inverse band effective mass tensor. At a one-dimensional band minimum the curvature is positive, whereas at a maximum it is negative. Near a weak two-wave avoided crossing with reciprocal wavenumber $G$ and coupling magnitude $U$, the two edge curvatures are $E_{\pm }^{\prime \prime }={\hslash }^2/m\pm {\hslash }^4{G}^2/(4m^{2}U)$. This is a crystal response coefficient, not a change in the bare electron mass.

In one dimension the band effective mass is defined by $1/m^{\ast }(k)=E^{\prime \prime }(k)/{\hslash }^2$. Together with $v=E^{\prime }(k)/\hslash$ and $\hslash \dot{k}=F$, this gives $\dot{v}=F/m^{\ast }$. Negative band curvature produces negative effective mass for the electron wave packet; near a filled-band maximum the equivalent missing-electron description uses positively responding holes. In several dimensions the inverse mass is the Hessian ${\partial }_i{\partial }_{j}E/{\hslash }^2$.

For fixed band effective masses and band gap $E_g$, the intrinsic carrier concentration obeys $n_i=C{T}^{3/2}{e}^{-E_g/(2k_{B}T)}$. ThusA base-ten plot against $x=1000\mathrm{K}/T$ instead has slope $-E_g/(2000k_B\mathrm{K}\ln 10)$ after the prefactor correction. The intrinsic branch must be used, rather than the extrinsic plateau or dopant freeze-out branch. A changing gap or effective mass makes this an activation-energy estimate, and a small gap uncertainty can produce a much larger multiplicative uncertainty in a room-temperature minority density.

For a closed semiclassical orbit with area $S(E)$ in a plane of wave vector space, the cyclotron effective mass is defined by the displayed derivative. It need not equal the local curvature-based band effective mass.

Use physical electric fields $\mathbf{E}(t)=\mathrm{Re}[\hat{\mathbf{E}}{e}^{-i\omega t}]$ and current densities $\mathbf{J}(t)=\mathrm{Re}[\hat{\mathbf{J}}{e}^{-i\omega t}]$, with peak complex amplitudes. After the initial transient has decayed, substitution into the Drude model equation gives the complex conductivityHere the mobile species is electrons. With the alternative $e^{+i\omega t}$ convention, the denominator is $1+i\omega \tau$ and the imaginary part changes sign; the physical response is identical.^[ref]

For $E_x(t)=E_0\cos \omega t$ with $\omega >0$, the real-time current density isThus a positive argument of complex conductivity in the $e^{-i\omega t}$ convention means that current density lags the electric field. At $\omega \tau =1$, its real part and imaginary part are both ${\sigma }_0/2$, its modulus is ${\sigma }_0/\sqrt{2}$, and the lag is $\pi /4$.

For $\omega \tau \ll 1$, complex conductivity tends to the positive constant ${\sigma }_0$: current density nearly follows the electric field. For $\omega \tau \gg 1$ within this model,The current density amplitude decreases and its response becomes predominantly inertial. Average power absorbed per volume is $\overline{p}=\frac{1}{2}\mathrm{Re}\sigma |\hat{\mathbf{E}}{|}^2\ge 0$. These limits describe the material response to a specified local electric field, not the complete electromagnetic response of a finite specimen with contacts. The Drude response has its pole at $\omega =-i/\tau$, consistent with the decaying causal response of a first-order relaxation equation.

The simple Drude model does not predict the microscopic momentum relaxation time. It neglects electronic band structure and Fermi-Dirac statistics; a useful semiclassical extension replaces $m$ by an appropriate band effective mass, but neither a single scalar mass nor one constant momentum relaxation time describes every material. Several charge carriers, energy-dependent scattering, and transitions between electronic bands can spoil the simple Drude frequency response. A successful low-angular frequency fit does not justify extrapolation to arbitrarily large angular frequencies.

For $t(a)=-2E_1{e}^{-a/a_1}$ with $E_1,a_1>0$, a nearest-neighbour cubic tight-binding model has zone-centre band effective massIts logarithmic derivative is $1/a_1-2/a$. The unique minimum occurs at $a=2a_1$ and has value ${\hslash }^2\exp (2)/(16E_1{a}_1^2)$. The explicit $a^2$ in band curvature competes with the exponentially weakening hopping integral. Extrapolation to vanishing atomic separation lies outside the localized-orbital approximation.

The positive electron mobility relates the drift velocity of conduction electrons to an electric field: ${\mathbf{v}}_d=-{\mu }_e\mathbf{E}$. In the isotropic Drude model, ${\mu }_e=e\tau /m^{\ast }$, where $\tau$ is the momentum relaxation time and $m^{\ast }$ the band effective mass. The minus sign describes negative charge; the electron mobility itself is positive.

In a three-dimensional uniform isotropic continuum obeying the Principle of Galilean relativity, with one bare particle mass $m$, the Fermi-liquid effective mass satisfiesA band effective mass need not satisfy this relation.^[ref]

For the stipulated $m^{\ast }=2m$ in the occupation figure, this relation requires $F_1^s=3$ if those assumptions apply. At fixed $p_F$, $v_F$ is half its free-particle value, so moving by $0.04p_F$ from the Fermi surface costs approximately $0.02p_F^2/m$ instead of $0.04p_F^2/m$. The factor of three belongs to the three-dimensional angular average, not to a universal definition of effective mass.

A flat band has energy independent of wavevector, and hence zero group velocity. A nearly flat band has small dispersion and, near a parabolic extremum, large band effective mass. Coupling a flat band to a dispersive band can produce an avoided crossing and a hybridization gap.

Near the zone centre of many cubic semiconductors, the upper valence bands have different curvatures and hence different band effective masses. In the isotropic approximation, the $j=3/2$ states with angular-momentum projection magnitude $3/2$ along the propagation direction form the heavy-hole branch; projection magnitude $1/2$ gives the light-hole branch. A flatter downward electron dispersion corresponds to a larger positive electron hole effective mass. Crystal anisotropy, strain and confinement can mix these branches, so the labels do not imply direction-independent exact masses.

A shallow acceptor can bind an electron hole through the screened Coulomb potential of a negatively charged impurity. A scalar band effective mass approximation gives a hydrogen-like bound-state ladder. Actual valence-band degeneracy and anisotropy can split levels and limit that approximation.

For nondegenerate bands separated by $E_g$, the intrinsic carrier concentration is $n_i=\sqrt{N_c{N}_v}{e}^{-E_g/(2k_{B}T)}$, using the effective density of states $N_c,N_v$. For fixed parabolic band effective masses and fixed gap, $n_i\propto T^{3/2}{e}^{-E_g/(2k_{B}T)}$.

A uniform magnetic field quantizes the transverse cyclotron motion of an electron. With electron charge $-e$ and the Landau gauge for a uniform magnetic field $\mathbf{A}=(0,Bx,0)$, minimal coupling givesFor an eigenstate of $p_y$ with eigenvalue $\hslash k_y$, this is a quantum harmonic oscillator centered at $x_c=-\hslash k_y/(eB)$, with cyclotron frequency ${\omega }_c=eB/m$. Its Landau levels areThe oscillator width is set by the magnetic length ${\ell }_B=\sqrt{\hslash /(eB)}$. In three dimensions, the free motion parallel to the magnetic field adds ${\hslash }^2{k}_z^2/(2m)$. The electron spin adds a Zeeman splitting $\pm g_s{\mu }_{B}B/2$. In a crystal the appropriate band effective mass and effective spin factor replace the free-electron values.

Changing $k_y$ moves the orbit center without changing the energy. In a rectangle $L_x{L}_y$, adjacent allowed centers differ by $2\pi {\ell }_B^2/L_y$. Requiring the center to lie in the sample gives the degeneracy of a Landau level, per spin,This large state degeneracy, together with the increasing level spacing, rearranges the occupied states as the magnetic field changes. To resolve the Landau levels, thermal broadening $k_{B}T$ and disorder broadening should both be small compared with $\hslash {\omega }_c$.

The de Haas-van Alphen effect is an oscillation of magnetization as successive Landau levels pass the Fermi energy. The Shubnikov-de Haas effect is the corresponding oscillation in longitudinal magnetoresistance. For a simple orbit, successive crossings occur periodically in $1/B$; the general relation to the extremal orbit area is Onsager quantization. These measurements reveal the geometry and effective masses of a Fermi surface.

In a two-dimensional electron system, filling an integer number $\nu$ of resolved levels leads to the integer quantum Hall effect, withand very small longitudinal resistivity on a plateau. Disorder localization helps produce finite plateau widths. Cyclotron resonance provides another direct signature: radiation is absorbed at the adjacent-level spacing $\hslash {\omega }_c$.

Assume dilute nondegenerate electrons and electron holes, parabolic three-dimensional band edges with the stated scalar band effective masses, spin multiplicity two, one effective valley for each edge, and thermal equilibrium. Take the unchanged host ground state to have unit activity and neglect bound excitons. The effective density of states values areFor a Fermi level $\mu$ between the band edges,The factors of $\mu$ cancel on multiplication. With $E_g=E_c-E_v$, the semiconductor mass-action law isThis density-form equilibrium constant has units ${\mathrm{m}}^{-6}$. A dimensionless thermodynamic constant uses a specified reference number density $n^{\circ }$, giving $K=K_n/(n^{\circ }{)}^2$. The dot representing the host ground state is not a freely translating gas species requiring a further gas partition function. For an intrinsic semiconductor, charge neutrality gives $n_e=n_h=n_i=\sqrt{K_n}$.

In a weakly doped n-type semiconductor, the mobile electrons occupy states near the bottom of the conduction band. Their local band curvature is positive, so their band effective mass is positive and approximately constant sufficiently near that minimum. For the usual $\beta <0$ convention, expand about $k=0$:Stronger overlap gives larger $|\beta |$, greater curvature and a smaller mass within this model. Positive $\beta$ simply places the minimum at the zone boundary and again gives a positive edge mass. A negative electron mass near a band maximum instead motivates the positive-mass electron hole description; it is not the usual conduction-edge situation for an n-type semiconductor. No numerical comparison with $m_e$ follows without values of $a$ and $\beta$.

Differentiating the tight binding dispersion produced by the Hückel method givesHenceUnlike a free particle, the band effective mass depends on wavevector and can change sign. At an inflection point $\cos (ka)=0$, the inverse mass vanishes and the curvature-based mass diverges; a quadratic approximation then ceases to describe the dispersion locally. For the usual $\beta <0$ convention, the bottom at $k=0$ has positive mass and the top at $k=\pi /a$ has negative electron mass. The constant $\alpha$ has no effect on curvature.

Two derivatives of the free-electron dispersion giveThe band effective mass becomes the ordinary electron mass when no periodic-potential modification of the quadratic dispersion relation is present.

Near the zone centre, $\cos (k_{i}a)\simeq 1-k_i^2{a}^2/2$. The tight-binding model becomesOnly $|\mathbf{k}{|}^2$ appears at quadratic order, so the band effective mass tensor is isotropic. Higher-order lattice terms need not be isotropic.

For the conduction band, ${\beta }_c<0$, so the curvature is positive andHere $a=5.42\times 10^{-10}$ m and both beta parameters must be converted from eV to joules. The band edges at the zone centre areso the model has a direct gap $\boxed{E_g=1.240\mathrm{eV}}$. The mass values describe curvature at these extrema; they are not constant masses throughout the full tight-binding bands.

An intrinsic semiconductor has its carrier populations set primarily by thermal excitation across the band gap; in the ideal pure, neutral case its conduction-electron and hole densities are equal, $n=p=n_i$. An extrinsic semiconductor has carrier populations significantly controlled by donor or acceptor impurities, producing predominantly n-type semiconductor or p-type semiconductor behavior. Chemical purity alone does not fix conductivity independently of temperature and gap size.

The positive charge carrier mobility is the magnitude of mean drift speed per unit weak electric field. For electrons ${\mathbf{v}}_e=-{\mu }_e\mathbf{E}$, for holes ${\mathbf{v}}_h={\mu }_h\mathbf{E}$, and its SI unit is ${\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$. In an isotropic relaxation-time model, $\mu =|q|\tau /m^{\ast }$.

A band effective mass characterizes how an electron wave packet accelerates in an energy band, rather than replacing its vacuum rest mass. In one dimension and its tensor generalization,These follow by differentiating $v_i={\hslash }^{-1}\partial E/\partial k_i$ and using $\hslash {\dot{k}}_j=F_j$. Effective masses can be anisotropic and electron band curvature can be negative.

An electron hole is a missing electron in an otherwise almost filled valence band. A completely filled band has no net transport current: its velocities cancel over the Brillouin zone. Describing a few missing states as mobile excitations is therefore simpler than following almost every occupied electron state.

Near an isotropic valence maximum, write the electron dispersion as $E_v(\mathbf{k})=E_v(0)-{\hslash }^2{k}^2/(2m_h)$ with $m_h>0$. The electron curvature mass is negative there. Removing that electron creates an excitation with momentum $\hslash {\mathbf{k}}_h=-\hslash \mathbf{k}$ and energy measured upward from the filled reference,ThusThe sign refers to the positive excitation energy of a missing electron near a maximum, not to negative vacuum mass. A general maximum gives the corresponding positive hole-curvature tensor.^[ref]