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In December 1947, John Bardeen and Walter Houser Brattain obtained transistor action at Bell Telephone Laboratories. William Shockley proposed the distinct bipolar junction transistor within the following month.^[ref]

Their 1948 paper describes ground, etched germanium, initially also anodized and rinsed. Surface contacts separated by $50$–$250\mu \mathrm{m}$ share a broad base contact. Positive emitter biasing injects electron holes; negative collector biasing draws them toward the collector. An input signal changes emitter electric current, and a collector electrical load converts the resulting change into voltage.^[ref]

Early electric field control experiments gave unexpectedly weak responses. John Bardeen proposed that surface states screened the interior. Surface charge could create a barrier and a hole-rich semiconductor inversion layer. Replacing an electrolyte control with a gold contact reversed the response sign, suggesting electron hole carrier injection. Closely spaced contacts made from a gold-coated wedge split with a razor then enabled power gain. The relative importance of surface and bulk transport depended on preparation and collector forming.^[ref]

The 1948 authors found that collector-current increments could exceed emitter-current increments; their current gain depended on biasing.^[ref] A terminal-current ratio alone cannot identify the microscopic path. Surface states, the local barrier, carrier injection and contact preparation prevent a single ideal modern bipolar junction transistor model from explaining every point-contact transistor.

For the conventional electric current directions drawn in the figure, $I_E$ enters the emitter, $I_C$ leaves the collector and signed $I_B$ enters the base. Kirchhoff's current law requiresThus a local current gain $\alpha >1$ requires an accompanying base-current change. The collector increment is not simply a count of injected electron holes, and it does not violate electric charge conservation.

For an experiment following the functional arrangement, first establish each contact's separate current-voltage characteristic relative to the base. Then hold collector biasing fixed, vary a small emitter signal, and compare the collector electrical load voltage with the input. A decisive power gain check measures both input electric current and voltage and the output power in a known electrical load; voltage enlargement alone is insufficient. These are proposed measurement controls, not additional claims about the 1947 laboratory record.

Repeating a setting tests drift; reversing or removing emitter biasing tests whether the response requires carrier injection. Contact motion, surface contamination, temperature, direct electrical coupling and noise can all affect the inference. A small-signal model describes measured local terminal response without deciding every microscopic mechanism.

Introducing excess mobile charge carriers into a semiconductor, for example through a contact under biasing. Their subsequent motion and electron-hole recombination can change the electrical conductivity and an output electric current.

For a p-n junction, biasing with the p-type semiconductor at positive electric potential difference relative to the n-type semiconductor.

For a p-n junction, biasing with the p-type semiconductor at negative electric potential difference relative to the n-type semiconductor.

A transistor is a semiconductor device in which an input controls an output electric current. Used with biasing and an electrical load, it can form an electronic amplifier or a switch. Its power gain comes from an external supply: the input signal controls the conversion of supplied energy into output signal power.

The point-contact transistor makes the idea tangible: two nearby contacts interact through one piece of semiconductor. A bipolar junction transistor instead uses two p-n junctions and a thin intervening region. The distinction matters both for the history and for choosing a physical model.

An original teaching model exposes the roles of input loading, output loading and the supply. Choose a small-signal model with positive input electrical resistance $r_i$, transconductance $g_m>0$, and output electrical resistance $r_o>0$. Its controlled output current source draws $g_m{v}_i$ from the output node toward the reference node. This chosen sign gives an inverting voltage gain; it is not the historical contact circuit's sign convention.

Assume a fixed operating point, negligible reverse coupling, a frequency range where coupling capacitors pass the signal, and negligible other capacitances and transit delays. A collector resistor $R_D$ connects the output to a steady ideal supply $V_{DD}$; an external electrical load $R_L$ is coupled through a capacitor, so it draws no direct current. The input source has series electrical resistance $R_s$. All voltages below are small departures from the operating point. An ideal fixed supply has zero incremental voltage and therefore becomes the reference node in the small-signal model.

Define $R_O=R_D\parallel r_o$ and $R_P=R_O\parallel R_L$, where $a\parallel b=ab/(a+b)$. Input voltage division and output Kirchhoff's current law giveConsequently the port voltage gain, overall source-to-output voltage gain, and load current gain magnitudes areThis current gain uses load electric current, not all the controlled-source electric current. It is also a different port definition from the historical emitter-to-collector current gain. Larger $R_s$ attenuates the input; smaller $R_L$ attenuates the output.

For a sinusoid input signal, use root mean square voltages. The power gain from accepted input signal power $P_i=v_i^2/r_i$ to useful load power $P_L=v_o^2/R_L$ isUnlike $|A_i|$, this tends to zero as either $R_L\to 0$ or $R_L\to \infty$. Differentiation givesThus matching the output electrical load maximizes delivered power in this unilateral resistive model. For fixed source voltage, input loading multiplies $P_L$ by $[r_i/(R_s+r_i){]}^2$; the accepted-input power gain above excludes the loss in $R_s$.

Choose $r_i=R_s=1\mathrm{k\Omega }$, $g_m=2\mathrm{mS}$, $r_o=20\mathrm{k\Omega }$, and $R_D=2\mathrm{k\Omega }$. Then $R_O=20/11\mathrm{k\Omega }$. With $R_L=2\mathrm{k\Omega }$ and $v_s=20\mathrm{mV}$ root mean square, the input is $10\mathrm{mV}$ and the inverted output has magnitude $19.0476\mathrm{mV}$ root mean square. Hence $P_i=0.100\mu \mathrm{W}$ and $P_L=0.181406\mu \mathrm{W}$: $G_P=1.81406$. These are calculated values of the chosen model, not historical measurements.

With the same parameters but $R_L=100\Omega$, $|A_i|=1.89573$ while $G_P=0.359381<1$. At $R_L=10\mathrm{k\Omega }$, $|A_v|=3.07692$ while $G_P=0.946746<1$. Neither current gain nor voltage gain alone establishes power gain.

For the direct current load line in the figure, choose $V_{DD}=6\mathrm{V}$, $I_Q=1\mathrm{mA}$ and $V_Q=4\mathrm{V}$, consistent with $V_Q=V_{DD}-R_D{I}_Q$. Locally extend the model as $I=I_Q+g_m{v}_i+(V-V_Q)/r_o$. With the external electrical load isolated at direct current, its intersection with $I=(V_{DD}-V)/R_D$ is $V=V_Q-g_m{R}_O{v}_i$. Keeping $|v_o|$ small compared with the available voltage headroom is essential; extrapolation to arbitrarily large signals would be unphysical.

At the chosen operating point the collector supply delivers $V_{DD}{I}_Q=6\mathrm{mW}$: $2\mathrm{mW}$ is dissipated in $R_D$ and $4\mathrm{mW}$ in the output device. Under a small signal, that energy flow is redistributed to provide load power. The incremental controlled current source hides the supply's steady energy flow; it does not create energy. A real complete amplifier also needs its input biasing network and has further losses. This calculation establishes neither its total efficiency nor a universal law for point-contact transistors.

A tunnel diode is a p-n junction with sufficiently heavy semiconductor doping on both sides to make a thin depletion region and permit substantial interband tunnelling. The neutral regions are degenerate semiconductors. Its distinctive forward current-voltage characteristic contains a peak followed by a valley: over part of the curve, increasing the applied electric potential difference decreases the electric current. The Esaki tunnel-diode experiment made this behavior experimentally concrete.

The useful quantity is the local slope, not the ratio of total voltage to total electric current. With conventional electric current $I$ entering the positive-voltage terminal, defineNegative differential resistance means $g_d<0$, hence $r_d<0$ where defined. A forward operating point can still have $V>0$, $I>0$ and absorbed power $VI>0$. A small voltage increase then gives a negative current increment; this does not make the total electric current negative or turn the device into an unlimited source of energy. The external supply sets the operating point and supplies the energy available for an electronic amplifier.

An original idealized construction explains the shape. Put the n-type semiconductor on the left and the p-type semiconductor on the right. Take $q>0$ as the elementary charge and $V=V_p-V_n$. Increasing forward bias lowers the right-hand Electron energy levels relative to the left. Denote the two reservoir electrochemical potentials by ${\mu }_n,{\mu }_p$, so that ${\mu }_n-{\mu }_p=qV$. At zero temperature, occupied left-hand conduction band states extend up to ${\mu }_n$; empty right-hand valence band states start at ${\mu }_p$. For transfer conserving Electron energy, the available interval isIt is nonempty only when its upper endpoint exceeds its lower endpoint. Both an occupied initial quantum state and an empty final quantum state must exist at the same energy. The Pauli exclusion principle prevents transfer into an already occupied final quantum state.

For the original diagram, choose arbitrary energy units with $E_{c,n}=-0.5$, ${\mu }_n=0$, ${\mu }_p=-u$ and $E_{v,p}=0.5-u$, where $u$ is $qV$ in those units. The available interval has widthThus $L(0.25)=0.25$, $L(0.50)=0.50$, $L(0.70)=0.30$, and $L(1.15)=0$. Initially forward bias opens a transfer window; further forward bias closes it by moving the right-hand valence band edge below the left-hand conduction band edge. This is a state-counting illustration, not a formula for a measured electric current.

For reverse bias, the transfer direction changes: occupied right-hand valence band states can feed empty left-hand conduction band states. In the same construction, $u=-0.70$ opens the interval $0<E<0.70$ for this reverse transfer. A narrow depletion region allows a large reverse quantum tunnelling electric current at small electric potential difference, whereas the ordinary Shockley diode equation predicts only a small reverse saturation electric current before diode reverse breakdown. At zero biasing, equal reservoir occupations give zero net electric current; quantum tunnelling does not require a net equilibrium flow.

A finite-temperature refinement replaces sharp occupation cutoffs with the Fermi-Dirac distribution. An illustrative weak-transfer expression isHere $\mathcal{W}\ge 0$ describes allowed initial/final quantum states and their coupling, and $f_n,f_p$ are Fermi-Dirac distributions with the respective electrochemical potentials. The occupation difference follows by subtracting the reverse transfer factor from the forward one: $f_n(1-f_p)-f_p(1-f_n)=f_n-f_p$. An overlap interval alone does not determine $\mathcal{W}$: transmission probability, density of states, crystal momentum selection and phonons can matter. A complete germanium calculation is more demanding than multiplying two constant density of states factors. At larger forward bias, ordinary carrier injection and diffusion supply a rising current branch even after direct band overlap is lost.