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Gallium phosphide is a compound semiconductor of gallium and phosphorus, with chemical formula $\mathrm{GaP}$. Its electronic band structure determines which photon energies can excite mobile charge carriers and which transitions can produce light.

Its bulk band gap is indirect: a transition near the lowest gap involves a change of crystal momentum, so a phonon or another momentum-transfer mechanism matters. Consequently a band gap value alone does not predict an efficient light-emitting diode. Impurity states, radiative and nonradiative recombination, and extraction of emitted photons all affect the observable device output.

Efficiency has several denominators. Specify a steady electric current $I>0$, positive terminal electric potential difference $V_f$, and a simplified narrow emission spectrum with photon energy $E_{\gamma }$. Assume at most one radiative photon per injected electron and electron hole pair. Let ${\eta }_{\mathrm{inj}}$ be the fraction of the electrical pair-supply rate $I/q$ reaching the active layer, ${\eta }_{\mathrm{rad}}$ the fraction of those pairs recombining radiatively, and ${\eta }_{\mathrm{ext}}$ the fraction of internally emitted photons that escape. Then counting the successive events givesDefine internal quantum efficiency here conditionally on pairs reaching the active layer: ${\eta }_{\mathrm{IQE}}={\eta }_{\mathrm{rad}}$. The internal photon yield per electrical pair is instead ${\eta }_{\mathrm{inj}}{\eta }_{\mathrm{IQE}}$. Stating this convention matters when another definition folds injection into internal quantum efficiency. The external quantum efficiency and wall-plug efficiency areThese are photon-count and energy-flow identities for the declared model. For a broad spectrum, replace $E_{\gamma }$ by the mean escaping photon energy, weighted by photon number, when computing optical power.

A stipulated example chooses $I=20\mathrm{mA}$, $V_f=3.20\mathrm{V}$, $\lambda =450\mathrm{nm}$, ${\eta }_{\mathrm{inj}}=0.90$, ${\eta }_{\mathrm{IQE}}=0.80$ and ${\eta }_{\mathrm{ext}}=0.50$. For every 100 electrical pairs, 90 reach the active layer, 72 emit internally, and 36 photons escape. Thus ${\eta }_{\mathrm{EQE}}=0.36$, not $0.80$. Using $q=1.602176634\times 10^{-19}\mathrm{C}$ givesThe dimensional analysis is transparent: $A/C={\mathrm{s}}^{-1}$, $J/s=\mathrm{W}$, and $\mathrm{CV}=\mathrm{J}$. The optical and electrical efficiencies differ because $E_{\gamma }/q=2.75520\mathrm{V}$ differs from the chosen $V_f$.

The factors suggest different improvements. Better confinement can reduce injection leakage; suppressing nonradiative recombination raises the radiative fraction; improving light extraction efficiency helps already-emitted photons escape. A photon trapped by total internal reflection has already passed the radiative step and can still be lost through absorption. Improving extraction therefore need not change the internal radiative fraction.

Shuji Nakamura's lecture cautions that why indium gallium nitride emits efficiently despite many defects was not completely settled in that account.^[ref]

As an independent consistency check on the 1994 reported values, treating its broad spectrum as monochromatic at the $450\mathrm{nm}$ peak givesThis agrees at the quoted precision with the reported $2.7\%$. Its optical/electrical power ratio is instead $1.5\mathrm{mW}/(20\mathrm{mA}\times 3.6\mathrm{V})=2.0833\%$. The first estimate uses a peak in place of a photon-number-weighted mean, so agreement is a consistency check rather than an exact reanalysis of the measured spectrum.

forward bias injects electrons and holes into a common active region. Their electron-hole recombination can emit a photon as an electron falls from a conduction-band state into an empty valence-band state, with $h\nu$ approximately the band gap $E_g$ near the band edges. A direct band gap makes this radiative transition much more probable than an indirect gap requiring simultaneous phonon participation. Carrier confinement improves their overlap; nonradiative recombination and photon trapping reduce the external efficiency. This is spontaneous electroluminescence and does not require population inversion. The biased carriers have separate quasi-Fermi levels, rather than one global equilibrium Fermi level. The band-diagram downward arrow shows photon emission. As a concrete implementation, an InGaN/AlGaN double heterostructure was used for a bright blue junction LED.^[ref]

A p-n junction brings p-type and n-type regions into contact. Majority-carrier diffusion initially leaves exposed ionized acceptors and donors, producing a depletion region and a built-in potential. At thermal equilibrium the electrochemical potential is constant: drift and diffusion currents cancel. The internal barrier is not a freely extractable battery voltage.

For a nondegenerate abrupt homojunction,Here $V>0$ denotes forward bias and the depletion approximation is assumed. forward bias lowers the barrier and injects minority carriers; reverse bias widens the depleted region and suppresses ordinary majority injection. In the ideal diffusion regime,Recombination can change the ideality factor; series resistance, high-level injection, leakage and breakdown limit this simple Shockley diode equation. The original junction theory explicitly treats both electron and hole currents, which is essential to carrier injection and transistor action.^[ref]

As a rectifying diode, the junction conducts strongly in one bias direction and weakly in the other before breakdown. This permits power rectification, signal detection and electronic switching. Stored minority charge affects turn-off time, so a static exponential current-voltage relation alone does not specify switching speed. A junction capacitance $C_j\simeq {ϵ}_{s}A/W$ varies with reverse bias and can be used in a voltage-controlled capacitor; heavily doped or high-field junctions can instead exploit controlled tunnelling or avalanche breakdown.

In a photodiode, absorbed photons generate electron-hole pairs and the depleted-region field assists collection. reverse bias widens the collecting region and can improve speed, but adds dark-current noise and breakdown constraints. In a solar cell, the same carrier generation supplies current against an external voltage. An ideal illuminated characteristic is $I=I_s(e^{qV/(k_{B}T)}-1)-I_{\mathrm{ph}}$: at open circuit the forward diode current balances photocurrent, while useful power is taken at an intermediate operating point. Neither short circuit nor open circuit delivers power to a load.

A forward-biased light-emitting diode injects electrons and holes that can recombine radiatively. Efficient emission favors suitable direct-gap materials and carrier confinement; the characteristic photon energy is near the semiconductor band gap. nonradiative recombination, escape losses, series resistance and heating limit efficiency. Two coupled junctions also form a bipolar junction transistor: an emitter injects minority carriers through a thin base, and a reverse-biased collector collects them. Useful current gain depends on efficient injection and limited base recombination, not simply on joining any three arbitrary regions.

These functions are experimentally distinguished by measuring dark and illuminated current-voltage curves, bias-dependent capacitance, transient switching or optical emission, with controlled temperature and current limits. The common mechanism is bias-controlled carrier injection or collection at a depletion barrier; the device geometry and operating mode determine which function is useful.

A solar cell uses the photovoltaic effect to turn photon energy into electrical work. In a semiconductor, above-gap photon absorption generates an electron in the conduction band and an electron hole in the valence band. A p-n junction, together with selective electrical contacts, collects the two carrier species at opposite terminals. Carrier diffusion and the built-in electric field help separate them before electron-hole recombination. Illumination maintains different quasi-Fermi levels for electrons and electron holes; their splitting, divided by $e$, sets the available terminal voltage in an ideal device. The equilibrium built-in potential alone cannot continuously deliver work.

For an ideal junction, the illuminated output current density isHere $J_{\mathrm{sc}}$ is the photogenerated short-circuit current density and $J_0$ the diode saturation current. The useful operating point maximizes $VJ$, rather than either current or voltage separately. With solar-cell fill factor $\mathrm{FF}=P_{\max }/(V_{\mathrm{oc}}{I}_{\mathrm{sc}})$,Series resistance, shunts, incomplete photon absorption and nonradiative recombination reduce the attainable efficiency.

The Shockley-Queisser limit removes these avoidable losses but retains the following physical constraints. There is one semiconductor junction with one band gap; each absorbed above-gap photon yields at most one collected electron-hole pair; carriers thermalize to the cell temperature; and the inverse optical process produces unavoidable radiative recombination. If ${\Phi }_{\odot }(E)$ is the incident photon flux per unit energy, ideal photon absorption givesThe same ability to absorb light requires the junction to emit it. At a forward voltage $V$, the emitted photon population has a chemical potential $eV$; in the ordinary nondegenerate limit the resulting recombination current is the exponential diode term above. Maximizing $VJ$ with this radiative $J_0$, and then choosing $E_g$, gives the limiting efficiency.

A small band gap collects many photons but gives a low voltage and large thermalization losses. A large band gap permits a larger voltage but transmits too much of the incident spectrum. Below-gap photons are lost to transmission, excess photon energy above the gap becomes heat, and radiative emission and its associated entropy loss keep $e{V}_{\mathrm{oc}}$ below $E_g$. The optimum single-junction conversion is roughly thirty percent under ordinary unconcentrated sunlight; the precise ceiling depends on spectrum, cell temperature and optical geometry. The original detailed-balance calculation gave about $30\%$ at $E_g\simeq 1.1\mathrm{eV}$ under its specified assumptions.^[ref] Multiple junctions and optical concentration change the assumptions and consequently change the bound.

The Shockley-Queisser calculation treats a single-junction solar cell with a single band gap, in steady state, with one collected electron-hole pair per absorbed above-gap photon, an ideal absorption edge, thermalized carriers and radiative recombination as the limiting recombination process. The source spectrum, cell temperature, angular acceptance and optical concentration must be specified. Below-gap photons are transmitted; energy above the gap is lost during carrier thermalization; the cell must emit photons by detailed balance, producing a recombination current and an entropy-related voltage loss. Delivering power at finite current also puts the operating voltage below the open-circuit voltage. Nonradiative recombination, resistance and imperfect collection worsen a real cell but are not required for the ideal limit.

Three ways to change those assumptions are tandem solar cells, which divide the spectrum among gaps and reduce both transmission and thermalization losses; hot-carrier solar cells, which aims to collect excess carrier energy before thermalization; and carrier multiplication or spectral conversion, which aims to use a high-energy photon for more than one excitation or combine otherwise unusable sub-gap photons. These concepts have additional practical losses and do not automatically outperform an optimized conventional device. The usual unconcentrated single-junction optimum is approximately one third under a terrestrial solar spectrum, rather than a universal efficiency independent of illumination.

For the geometrical estimate, take the stated horizontal equinox irradiance to set a constant direct-normal reference. The equinox solar-noon elevation is ${\alpha }_e=90^{\circ }-51.75^{\circ }=38.25^{\circ }$, so this reference is $I_n=1/\sin {\alpha }_e\simeq 1.62\mathrm{kW}{\mathrm{m}}^{-2}$. A south-facing panel with tilt $\beta =41.1^{\circ }$ has noon incidence factor $\cos (51.75^{\circ }-\delta -41.1^{\circ })$, where $\delta =\pm 23.44^{\circ }$. Relative to the $1\mathrm{kW}{\mathrm{m}}^{-2}$ plane-of-array rating,These are the results of that idealized geometrical normalization, not credible seasonal production forecasts. Its inferred direct-normal irradiance already exceeds the approximately $1.36\mathrm{kW}{\mathrm{m}}^{-2}$ solar irradiance outside the atmosphere, so the supplied horizontal benchmark cannot describe a purely direct noon beam literally. Real direct and diffuse fractions, atmospheric attenuation at low winter elevation, cell temperature and inverter clipping are unspecified. An alternative assumption of $1\mathrm{kW}{\mathrm{m}}^{-2}$ direct-normal irradiance gives approximately $4.88$ and $4.14$ kW. A physically unique maximum cannot be inferred without an irradiance model.

The stated annual output corresponds to $4100/5=820$ full-rated hours, an average power of $0.468$ kW and a capacity factor of $9.4\%$. Night, cloud, seasonal day length and other losses explain the large difference from an instantaneous sunlit estimate.

For a national scale estimate, take UK area $2.44\times 10^{11}{\mathrm{m}}^2$, population $6.6\times 10^7$, and annual mean solar input $100\mathrm{W}{\mathrm{m}}^{-2}$. Covering five percent with twenty-percent-efficient modules givesThis is comparable with an order-$100$ kWh daily per-person primary-energy budget, and much larger than electricity use alone, of order $10$-$15$ kWh per person per day. It is a gross area-and-flux estimate: access land, shading, seasonal storage, curtailment and conversion between primary energy and electrical end use all affect its interpretation.