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For a two-dimensional electron gas in a perpendicular magnetic field of magnitude $B>0$, the filling factor is the Electron number per unit area $n_s$ divided by the orbital degeneracy per unit area $eB/h$ of one spin branch of a Landau level. Here $e$ is the positive elementary charge and $h$ the Planck constant. The nominal filling factor varies continuously with $n_s/B$; it need not be an integer.

A metal-oxide-semiconductor field-effect transistor, with an insulating layer separating the gate from the semiconductor. Its gate electric field controls the channel's mobile charge carriers; a semiconductor inversion layer can form a two-dimensional electron gas.

The quantum Hall effect connects an electrical measurement to a quantum counting rule: a two-dimensional electron gas in a perpendicular magnetic field can exhibit plateaus of transverse electrical resistance. The integer case supplies a resistance scale built from the Planck constant and elementary charge, rather than the sample's dimensions. The fractional quantum Hall effect involves additional many-Electron physics.

Daniel Tsui, Horst Störmer and Arthur Gossard reported the effect in 1982. They grew gallium arsenide–aluminium gallium arsenide layers by molecular beam epitaxy, separating the two-dimensional electron gas from its semiconductor doping. They cut Hall bars and made indium contacts. Low-field measurements established number density and charge carrier mobility. A perpendicular magnetic field sweep measured transverse and longitudinal sheet resistivities at several temperatures. Cooling sharpened the plateau near $3h/e^2$ and the longitudinal minimum at filling factor $1/3$; integer plateaus provided an internal comparison. The longitudinal minimum remained finite at the lowest temperature: zero-temperature vanishing was unresolved. This established anomalous transport, without directly measuring excitation electric charge.^[ref]

The two readouts test different statements. A single intersection with $R_H=3R_K$ would also occur on the smooth classical relation $R_H=B/(n_{s}e)$ at $n_{s}h/(eB)=1/3$. A quantum Hall plateau instead persists over a magnetic field interval. Comparing transverse and longitudinal signals helps distinguish that plateau from a contact-placement artefact; the quantum Hall conductivity tensor inversion quantifies the contamination when longitudinal sheet resistivity is nonzero.

Later, 1997 shot noise measurements associated with quantum tunnelling at filling factor $1/3$ tested the excitation electric charge separately, finding $e/3$. That is a different observable from a Hall plateau.^[ref]

An electron gas confined in one spatial direction, with motion available in the other two. Its Electron number per unit area is $n_s=N/A$. The ideal Fermi gas approximation neglects interactions between Electrons; an actual two-dimensional electron gas can have important interactions. Confinement alone does not require a magnetic field or Landau levels.

Klaus von Klitzing, G. Dorda and M. Pepper reported a silicon MOSFET measurement in 1980. Its gate controlled an semiconductor inversion layer; transverse contacts measured the Hall voltage and separate longitudinal contacts measured dissipation. One sweep held $B=18\mathrm{T}$, $T=1.5\mathrm{K}$ and $I=1\mu \mathrm{A}$ fixed while varying gate voltage. Hall plateaus accompanied small longitudinal voltages. Device-geometry comparisons and high-input-impedance voltage measurements helped test whether contact placement or electrical loading produced the result.^[ref]

This original functional diagram separates transverse and longitudinal readouts; it does not reproduce the historical device's dimensions. The gate inset explains how a field-effect transistor provides an adjustable two-dimensional electron gas. A longitudinal voltage close to zero is a useful check because accidental longitudinal separation between Hall contacts can otherwise contaminate the transverse measurement.