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Keep the illumination and cell temperature approximately constant. Connect an ammeter and an adjustable resistor as a series circuit across the solar cell; connect a high-resistance voltmeter across its terminals. Vary the electrical resistance and record pairs of electric potential difference $V$ and delivered electric current $I$. This measures the illuminated current-voltage characteristic.

A load close to a short circuit estimates $I_{\mathrm{sc}}$ at $V\simeq 0$. With the load disconnected, an open circuit measurement using a high-resistance voltmeter estimates $V_{\mathrm{oc}}$ at $I\simeq 0$. Neither endpoint delivers useful power: $P=VI$ vanishes there. The intermediate readings locate the maximum of $VI$ and determine the solar-cell fill factor. Holding illumination fixed matters because the photogenerated electric current changes with light intensity; holding temperature fixed matters because the diode saturation current and junction response change with it.

This experiment distinguishes producing an electric potential difference from delivering energy to a load. To determine conversion efficiency as well, measure the incident power on the illuminated area, rather than equating it to a lamp's electrical rating.

A solar cell uses the photovoltaic effect to turn photon energy into electrical work. In a semiconductor, above-gap photon absorption generates an Electron in the conduction band and an electron hole in the valence band. A p-n junction, together with selective electrical contacts, collects the two carrier species at opposite terminals. Carrier diffusion and the built-in electric field help separate them before electron-hole recombination. Illumination maintains different quasi-Fermi levels for Electrons and electron holes; their splitting, divided by $e$, sets the available terminal voltage in an ideal device. The equilibrium built-in potential alone cannot continuously deliver work.

For an ideal junction, the illuminated output current density isHere $J_{\mathrm{sc}}$ is the photogenerated short-circuit current density and $J_0$ the diode saturation current. The useful operating point maximizes $VJ$, rather than either current or voltage separately. With solar-cell fill factor $\mathrm{FF}=P_{\max }/(V_{\mathrm{oc}}{I}_{\mathrm{sc}})$,Series resistance, shunts, incomplete photon absorption and nonradiative recombination reduce the attainable efficiency.

The Shockley-Queisser limit removes these avoidable losses but retains the following physical constraints. There is one semiconductor junction with one band gap; each absorbed above-gap photon yields at most one collected electron-hole pair; carriers thermalize to the cell temperature; and the inverse optical process produces unavoidable radiative recombination. If ${\Phi }_{\odot }(E)$ is the incident photon flux per unit energy, ideal photon absorption givesThe same ability to absorb light requires the junction to emit it. At a forward voltage $V$, the emitted photon population has a chemical potential $eV$; in the ordinary nondegenerate limit the resulting recombination current is the exponential diode term above. Maximizing $VJ$ with this radiative $J_0$, and then choosing $E_g$, gives the limiting efficiency.

A small band gap collects many photons but gives a low voltage and large thermalization losses. A large band gap permits a larger voltage but transmits too much of the incident spectrum. Below-gap photons are lost to transmission, excess photon energy above the gap becomes heat, and radiative emission and its associated entropy loss keep $e{V}_{\mathrm{oc}}$ below $E_g$. The optimum single-junction conversion is roughly thirty percent under ordinary unconcentrated sunlight; the precise ceiling depends on spectrum, cell temperature and optical geometry. The original detailed-balance calculation gave about $30\%$ at $E_g\simeq 1.1\mathrm{eV}$ under its specified assumptions.^[ref] Multiple junctions and optical concentration change the assumptions and consequently change the bound.

The Shockley-Queisser limit is the radiative conversion-efficiency bound for an ideal single-junction solar cell, with one collected Electron-electron hole pair per absorbed above-gap photon, carrier thermalization, and radiative recombination required by the reverse optical process. Photons below the band gap are not absorbed, while excess photon energy above it is thermalized. Maximizing the electrical power over the operating electric potential difference and then the band gap gives a ceiling of roughly thirty percent for ordinary unconcentrated sunlight; its precise value depends on the incident spectrum, cell temperature and emission geometry. The original calculation by William Shockley and Hans-Joachim Queisser obtained approximately $30\%$ at $1.1\mathrm{eV}$ for a $6000\mathrm{K}$ blackbody source and a cell at $300\mathrm{K}$.^[ref]

A solar cell converts incident light into electrical power through the photovoltaic effect. A semiconductor p-n junction separates and collects photogenerated Electrons and electron holes. An ideal illuminated junction has output current densityHere $J_{\mathrm{sc}}$ is the short-circuit current density, $J_0$ is the diode saturation current, and $V_{\mathrm{oc}}$ is the open-circuit electric potential difference. The conversion efficiency is the largest delivered $VJ$ divided by the incident power per unit area; the short-circuit and open-circuit operating points themselves deliver zero power.