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Band curvature is the Hessian matrix of an energy band as a function of wavevector. Dividing it by ${\hslash }^2$ gives the inverse band effective mass tensor. At a one-dimensional band minimum the curvature is positive, whereas at a maximum it is negative. Near a weak two-wave avoided crossing with reciprocal wavenumber $G$ and coupling magnitude $U$, the two edge curvatures are $E_{\pm }^{\prime \prime }={\hslash }^2/m\pm {\hslash }^4{G}^2/(4m^{2}U)$. This is a crystal response coefficient, not a change in the bare electron mass.

A band gap is an energy interval between adjacent energy bands containing no allowed bulk state.

A band insulator has an integer number of completely filled energy bands, with the Fermi energy inside a positive band gap. At zero temperature, no arbitrarily low-energy charged excitation is then available.

In a single isolated energy band, a wave packet subject to a constant force satisfies $\hslash \dot{k}=F$. Its group velocity is periodic in $k$ with reciprocal-lattice period $2\pi /a$, so its position oscillates with period $2\pi \hslash /(|F|a)$ when its mean velocity over a band is zero. For $E(k)=E_0-2J\cos ka$, integrating the sinusoidal velocity gives the oscillation explicitly. This ideal description neglects scattering and interband tunnelling.

A Chern insulator is a two-dimensional band insulator whose occupied energy bands have a nonzero total Chern number. It has a bulk band gap, yet an interface with a topologically trivial band insulator carries a net excess of quantum Hall edge states propagating in one direction. Time-reversal symmetry must be broken. The Haldane model shows that a nonzero average magnetic flux is unnecessary.

Why distinguish two solids that both have a band gap? The energy eigenvalues tell us whether an excitation costs energy; the energy eigenstates also describe how the state changes around the Brillouin zone. Their Berry curvature can integrate to a nonzero integer. A small deformation changes the Berry curvature continuously, but cannot continuously change an integer. A Chern insulator and a trivial band insulator therefore cannot be connected through a path of isolated occupied energy bands with a common bulk band gap. The distinction survives sufficiently weak local perturbations. It does not make every microscopic quantity or every boundary state immune to every disturbance.

For a single filled energy band, set the Berry connection to ${\mathcal{A}}_j=i⟨u_{-}|{\partial }_{k_j}{u}_{-}⟩$, and orient the momentum plane by $(k_x,k_y)$. ThenThis is the First Chern class evaluated on the Brillouin zone, a torus. Smooth eigenvectors may require multiple patches; their transition phases have integer winding numbers. For charge $-e$ and conventional electric current $j_i={\sigma }_{ij}{E}_j$, these conventions give ${\sigma }_{yx}=C{e}^2/h$ and ${\sigma }_{xy}=-C{e}^2/h$. The measurable magnitude agrees with Chern number and integer Hall conductivity. Reversing the momentum orientation or the sign of the Berry connection reverses the displayed $C$.

For $\mathbf{d}\ne 0$, put $\hat{\mathbf{d}}=\mathbf{d}/|\mathbf{d}|$. The lower-band orthogonal projector is $P_{-}=(I-\hat{\mathbf{d}}\cdot \mathbf{\sigma })/2$. Applying the Pauli matrix multiplication law to $i\mathrm{Tr}(P_{-}[{\partial }_{k_x}{P}_{-},{\partial }_{k_y}{P}_{-}])$ givesThus the Chern number is the signed number of times the Brillouin zone covers a two-sphere under $\hat{\mathbf{d}}$. The lower energy eigenstate's actual Bloch vector is $-\hat{\mathbf{d}}$. The Berry curvature has the displayed positive sign for this lower band and the stated Berry connection; switching to the upper band changes its sign.

A useful local calculation exposes what each valley contributes. Write $p=\hslash v|\mathbf{q}|$. The linear Dirac Hamiltonian givesEach unbounded continuum cone gives a half-integer in this calculation. It is not a separately realizable half-integer Chern number of an isolated lattice energy band. The full honeycomb lattice supplies both valleys and the large-momentum completion. Starting with a trivial large-$|M|$ state, each single-valley mass crossing changes the lattice integer by the corresponding unit. There are no other band touchings. This establishes the exact lattice resultfor $t_2>0$, excluding the boundaries. This sign belongs to our explicit bond vectors, orientation and occupied-band convention.

For an original worked example, choose $t_1=1$, $t_2=0.08$, $\varphi =\pi /2$ and $M=0$. Then $\mu \simeq 0.415692$, $(m_{+},m_{-})=(-\mu ,+\mu )$, both valley gaps are $2\mu \simeq 0.831384$, and $C=-1$. Choosing instead $t_2=0$, $M=\mu$ gives exactly the same valley-gap magnitudes but $C=0$. The first state's two valley contributions reinforce; the second state's cancel.

An independent eigenvector-overlap calculation on periodic $31\times 31$, $61\times 61$ and $121\times 121$ momentum grids gives $C=-1$ for the first example and $C=0$ for the second. Reversing $\varphi$ in the first example gives $C=+1$. Direct integration of the analytic lattice Berry curvature agrees. For the overlap calculation one can remove the embedding phase from $f$, replacing it by $1+e^{i\mathbf{k}\cdot {\mathbf{a}}_1}+e^{i\mathbf{k}\cdot {\mathbf{a}}_2}$; this makes the cell-basis Hamiltonian periodic and prevents a false boundary-seam contribution. The local Berry curvature can depend on this basis convention; the integrated Chern number agrees. All mass-zero parameters are excluded before evaluating any integer.

The initially empty energy band above the band gap in the simple semiconductor description. Excited electrons in it can carry electric current; they can also bind to valence band electron holes as excitons.

For spin-degenerate electrons at atomic spacing $a$, alternate the hopping amplitudes $-(t+\delta )$ and $-(t-\delta )$, with $t>0$ and $|\delta |<t$. The doubled primitive unit cell gives an off-diagonal Bloch Hamiltonian entry $-(t+\delta )-(t-\delta )e^{-2ika}$. Its two eigenvalues are the displayed energy bands, for $|k|\le \pi /(2a)$. The band gap at the edge of the Brillouin zone is $4|\delta |$. At half filling there are two electrons per doubled primitive unit cell, so the lower band is full and the upper empty. This explicit model realizes the period-doubling form of a Peierls distortion.

A conical touching of two energy bands, with locally linear dispersion relation. The nearest-neighbour model of graphene supplies an explicit example.

At either displayed wave vector, the three complex hopping amplitudes add to zero: $1+2\cos (2\pi /3)=0$. Therefore the energy bands touch. There are two inequivalent electronic valleys; other equivalent corners are related by reciprocal-lattice translations. Setting $\mathbf{k}={\mathbf{K}}_{\tau }+\mathbf{q}$ and retaining first-order terms giveswhere ${\sigma }_x,{\sigma }_y$ are Pauli matrices. For example, at ${\mathbf{K}}_{+}$, $f\simeq -3b(q_x-i{q}_y)/2$. The matrix has the form of a massless two-dimensional Dirac Hamiltonian. Here $v_F$ is a material-model velocity, rather than the vacuum speed of light; this description does not change an electron's vacuum rest mass. It describes the dispersion relation of electronic excitations near a band crossing.

For a vertical optical transition between parabolic energy bands with common carrier temperature, net stimulated emission has occupation factor $f_c(E_c)-f_v(E_v)$. The monotonic Fermi-Dirac distribution makes this positive exactly when the quasi-Fermi-level splitting exceeds the transition photon energy. An allowed transition must also lie above the band gap. Broadening, band degeneracy and a zero-temperature occupation window require their own qualifications; this condition alone does not establish laser threshold.

A double heterostructure laser electrically pumps its central layer for stimulated emission. Band offsets confine charge carriers; refractive index contrast confines the optical normal mode.^[ref]

For an original bookkeeping model, let $R$ be the injected pair rate per unit area, $d$ the active-layer thickness, $N$ its excess pair number density, $\tau$ a recombination lifetime, and ${\tau }_e$ an escape time. Before appreciable stimulated emission, supposeChoose two otherwise identical devices with ${\tau }_e=\tau$ and ${\tau }_e=9\tau$. The resulting steady state populations are $R\tau /(2d)$ and $9R\tau /(10d)$: improved confinement raises the population by a factor $1.8$ at fixed injection. This linear model assumes equal excess electron and electron hole densities, fixed lifetimes, and no laser gain clamping.

Optical confinement enters separately. For a chosen optical normal mode, define $0<\Gamma \le 1$ as its gain-overlap factor with the active layer. With material optical gain $g$, internal loss ${\alpha }_i$, and mirror loss ${\alpha }_m$, a simple laser threshold condition isFor stipulated losses ${\alpha }_i+{\alpha }_m=3$ in inverse-length units, $\Gamma =1/2$ requires $g=6$, whereas $\Gamma =3/4$ requires $g=4$. This calculation varies optical overlap only; the preceding population calculation varies carrier escape only. Their combination explains the usefulness of controlling both the energy band profile and the optical normal mode.

Herbert Kroemer proposed the double heterostructure laser in 1963; he did not participate in its 1970 experimental realization.^[ref] Zhores I. Alferov describes his group's independent 1963 proposal and later experimental program.^[ref]

For a semiclassical wave packet in an isolated energy band, $v_i={\hslash }^{-1}{\partial }_{k_i}\epsilon$ and $\hslash {\dot{k}}_j=F_j$ imply ${\dot{v}}_i={\sum }_j(m^{\ast -1}{)}_{ij}{F}_j$. The inverse effective-mass tensor is the Hessian matrix of the dispersion divided by ${\hslash }^2$. Along a unit vector $\mathbf{e}$, $1/m_{\mathbf{e}}^{\ast }={\sum }_{ij}{e}_i(m^{\ast -1}{)}_{ij}{e}_j$. The Laplacian is its trace: ${\hslash }^{-2}{\nabla }_k^2\epsilon =\mathrm{tr}(m^{\ast -1})$. Thus in $d$ isotropic dimensions the scalar mass is $d{\hslash }^2/({\nabla }_k^2\epsilon )$, rather than ${\hslash }^2/({\nabla }_k^2\epsilon )$.

An electron hole is an unoccupied electron quantum state in an otherwise nearly full energy band, often the valence band. “Filled” refers to occupation of the allowed quantum states, not to filling all space with a continuous fluid of electrons. Each state, including its spin label, can hold at most one electron by the Pauli exclusion principle. The almost full energy band and its few missing occupants are therefore simpler to describe as a background plus a few electron holes. The electron hole is a quasiparticle, not a Positron inserted into the crystal.

Removing an electron of electric charge $-e$ changes the background's electric charge by $+e$. Thus an electron hole carries positive electric charge relative to that background. Promoting an electron into the conduction band creates an electron hole without changing the whole crystal's electric charge: $(-e)+(+e)=0$. An unbound pair still consists of two separate charge carriers; only a bound state of their relative motion is an exciton.

The local cartoon explains why a vacancy can move: when a neighboring electron fills it, another vacancy appears where that electron was. The vacancy has moved opposite to that particular transfer of an electron. In an extended Bloch state, use crystal momentum instead of imagining a permanently empty atomic site. For a completely filled energy band the summed electric current vanishes. Omitting one electron with group velocity ${\mathbf{v}}_v$ removes its contribution $-e{\mathbf{v}}_v$, leaving a contribution $+e{\mathbf{v}}_v$. This fixes both the positive electric charge and the velocity convention of the electron hole.

More precisely, near a parabolic valence band maximum, set its energy $E_v(0)$ as reference and define the electron hole wave vector by ${\mathbf{k}}_h=-{\mathbf{k}}_v$. ThenThe occupied electron branch has negative curvature there, while the electron hole branch has positive effective mass $m_h^{\ast }$. The velocity equality compares the electron hole with the missing Bloch state's group velocity; it does not contradict the opposite vacancy motion in a local transfer cartoon. The sign conventions are listed in Phys 460 Lecture 17.

Electronic band structure is the collection of allowed electron energy bands and gaps in a periodic medium, usually represented as energy versus crystal momentum. An energy band is one branch of that structure.

The electronic bandwidth is the difference between the maximum and minimum of one energy band over the Brillouin zone. It has units of energy, unlike a frequency bandwidth in signal processing. A nearest-neighbour tight-binding model on a primitive cubic lattice with equal real hopping integrals $t$ has $E(\mathbf{k})=E_0+2t{\sum }_{i=1}^3\cos (k_{i}a)$ and $W=12|t|$.

The range of energy within one electronic energy band, obtained by varying its wavevector. This differs from an interband band gap.

Leo Esaki's 1958 report describes alloy-fabricated germanium p-n junctions, with acceptor impurity concentration $1.6\times 10^{19}{\mathrm{cm}}^{-3}$ and donor impurity concentration approximately $10^{19}{\mathrm{cm}}^{-3}$. Its readout was the current-voltage characteristic: a forward peak occurred at $0.035\pm 0.005\mathrm{V}$. The report says specimens could be reproduced; above $0.3\mathrm{V}$ the forward branch approximately followed the ordinary Shockley diode equation.^[ref]

In his 1973 lecture, Leo Esaki recalls an earlier junction whose strong room-temperature reverse conduction preceded a negative-slope forward segment revealed by cooling. Its estimated zero-bias width was about $200$ ångströms ($20\mathrm{nm}$), supported by capacitance measurements. Increasing semiconductor doping further made the negative slope visible across the measured temperatures, including room temperature. Thus preparation and temperature variation were experimental controls, not merely changes to a theoretical diagram. The low onset voltage argued against avalanche production of electrons and electron holes; the energy band explanation connected the forward decline to loss of available final states.^[ref]

The historical readouts were junction electric current versus applied electric potential difference and a separate capacitance check; preparation and temperature were varied. The cited descriptions do not identify a meter model or give a complete wiring diagram.

For a modern repetition, measure junction voltage directly while stepping the supply and recording electric current, repeat both sweep directions, and compare temperatures and differently doped specimens. These are proposed controls, not a reconstruction of the historical apparatus. Lead electrical resistance, Joule heating, contact quality and voltage resolution can obscure the result. The tunnel-diode load-line stability calculation also predicts that an external resistor can make a negative-slope operating point inaccessible in a slow sweep. A jump in terminal readings then need not mean the underlying current-voltage characteristic is discontinuous.

An exciton is a bound state of an electron and an electron hole. Their opposite electric charges attract through the Coulomb potential, producing a neutral quasiparticle with internal relative motion and motion of its center of mass. In a semiconductor, promoting an electron from the valence band into the conduction band leaves an electron hole; the pair can occupy either an exciton bound state or an unbound scattering state. Merely creating the two charge carriers does not establish binding. A neutral exciton can transport excitation energy without transporting net electric charge. Coupling this material excitation strongly to a photon can form a polariton.

The striking optical consequence is that an exciton optical transition can absorb a photon with less energy than the threshold for creating unbound electrons and electron holes. The difference is the exciton binding energy, not an extra one-electron energy band inside the band gap. The Wannier-Mott exciton supplies a useful large-radius model; the Frenkel exciton describes the opposite, tightly localized limit.^[ref]

The exciton binding energy is the positive energy needed to separate a bound electron and electron hole into the relevant unbound scattering states. Compare the exciton energy $E_X$ with the continuum threshold $E_{\mathrm{cont}}$ at the same total crystal momentum and for the same energy bands. The negative internal energy eigenvalue $-E_B$ and the positive separation cost $E_B$ are different sign conventions for related quantities. An exciton may move freely through a perfect crystal while remaining internally bound: “free exciton” does not mean an unbound pair.