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An electrical circuit assembled from separately made components, such as individual transistors, resistors and capacitors. Several functions can share a package without forming a monolithic integrated circuit; packaging alone does not establish how the components were fabricated.

A transistor whose gate controls an electric field that changes conduction through a channel between source and drain. Changing the gate's electric potential difference controls the channel electric current.

An integrated circuit combines interconnected electrical circuit elements in a fabricated structure. A monolithic integrated circuit forms its elements in or on one piece of semiconductor, rather than merely putting separately manufactured components into one enclosure. Transistors supply control in electronic amplifiers; resistors and capacitors can supply bias and timing. Jack St. Clair Kilby's patent describes making such functions from a common semiconductor body with compatible fabrication steps.^[ref]

The useful change is to fabricate connections and functions together. Shrinking an enclosure still leaves individual parts to position and join. Integration makes their relative arrangement part of a repeatable fabrication pattern. The distinction is functional as well as geometric: one small piece can implement a whole electrical circuit, while its external terminals expose only the connections needed by its surroundings.

An integrated circuit interconnect is a conducting path joining circuit regions. In Robert Noyce's patent, deposited metal strips cross retained oxide on silicon; selected openings permit contact to the semiconductor while oxide prevents unwanted contact across p-n junctions. Figs. 3–5 combine detection, filtering and electronic amplifier functions using a transistor in one structure. The key is both connectivity and insulation: a metal path must touch its intended terminals while crossing other regions without shorting them.^[ref]

In his 2000 lecture, Jack St. Clair Kilby describes an August 1958 comparison circuit made from separate silicon elements. Resistors were cut and etched; capacitors came from diffused, metallized semiconductor wafers. It tested whether semiconductor elements could perform all the required functions, but was still a discrete circuit. For the September prototype he used already diffused germanium material with contacts, cut into bars, and hand-applied wax masks to define a transistor and a distributed resistor-capacitor region. Applying supply power produced an oscillation.^[ref]

An inspected eyewitness interview describes the germanium on a microscope slide with protruding wires; changing its connections changed the oscilloscope display from a straight line to a sinusoid. This supplied a qualitative connected/disconnected comparison, not a calibrated record of amplitude, loading or repeatability.^[ref]

The inference was feasibility: integrated semiconductor elements could cooperate as an operating electrical circuit. The hand-wired germanium prototype did not yet supply the deposited integrated circuit interconnects of Robert Noyce's silicon design. Nor does a working prototype establish manufacturing yield or long-term reliability.

The less abundant mobile charge carrier species: electron holes in an n-type semiconductor, or Electrons in a p-type semiconductor. A small equilibrium population does not imply an unimportant role in an operating transistor.

A monolithic integrated circuit has its circuit elements fabricated in or on one semiconductor die. Their connections are essential: an unconnected collection of transistors does not implement the intended electrical circuit.

An original ideal example separates function from fabrication. Connect two resistors, $R_1=10\mathrm{k\Omega }$ above $R_2=20\mathrm{k\Omega }$, in a series circuit across an ideal $3\mathrm{V}$ voltage source. With no load electric current drawn from their meeting point, Ohm's law and the Kirchhoff cycle law giveThese equations apply to either a discrete circuit or an idealized monolithic integrated circuit realizing those same electrical resistances. Integration changes construction; the electrical circuit equations still determine the output. A real load, unwanted capacitance or finite resistor tolerance changes the ideal calculation. Manufacturing many functions together also couples their fate: a fatal defect can discard an entire semiconductor die, motivating the Poisson defect yield model.

Awarded jointly to William Bradford Shockley, John Bardeen and Walter Houser Brattain for research on semiconductors and discovery of the transistor effect.^[ref]

A semiconductor has an electronic band gap and a conductivity strongly affected by temperature, impurities and carrier injection. Optical absorption can create mobile electrons and holes, enabling a photodiode.

The useful feature of a semiconductor is that its charge carrier population can be controlled. Semiconductor doping changes the supply of mobile Electrons or electron holes; carrier injection changes their population away from thermal equilibrium. A transistor turns that control into an electronic amplifier: a small input signal controls a larger flow of supplied energy.

For a uniform semiconductor in a weak electric field, a simple drift model writes its electrical conductivity asHere $q>0$ is the elementary charge, $n,p$ are the number densities of mobile Electrons and electron holes, and ${\mu }_n,{\mu }_p$ their positive charge carrier mobilities. The two contributions add because opposite electric charges drift in opposite directions and therefore carry electric current in the same direction. This model assumes fixed temperature and mobilities and omits diffusion from density gradients.

An original dimensionless example isolates the effect of carrier injection. Suppose initially $p\ll n=n_0$ and ${\mu }_n=2{\mu }_p$. Adding equal excess populations $\Delta n=\Delta p=0.1n_0$ gives $\Delta \sigma /{\sigma }_0=0.15$, even though the added electron holes remain a minority carrier population. A semiconductor can respond strongly to a small injected population without changing its underlying band gap.

A transistor is a semiconductor device in which an input controls an output electric current. Used with biasing and an electrical load, it can form an electronic amplifier or a switch. Its power gain comes from an external supply: the input signal controls the conversion of supplied energy into output signal power.

The point-contact transistor makes the idea tangible: two nearby contacts interact through one piece of semiconductor. A bipolar junction transistor instead uses two p-n junctions and a thin intervening region. The distinction matters both for the history and for choosing a physical model.

An original teaching model exposes the roles of input loading, output loading and the supply. Choose a small-signal model with positive input electrical resistance $r_i$, transconductance $g_m>0$, and output electrical resistance $r_o>0$. Its controlled output current source draws $g_m{v}_i$ from the output node toward the reference node. This chosen sign gives an inverting voltage gain; it is not the historical contact circuit's sign convention.

Assume a fixed operating point, negligible reverse coupling, a frequency range where coupling capacitors pass the signal, and negligible other capacitances and transit delays. A collector resistor $R_D$ connects the output to a steady ideal supply $V_{DD}$; an external electrical load $R_L$ is coupled through a capacitor, so it draws no direct current. The input source has series electrical resistance $R_s$. All voltages below are small departures from the operating point. An ideal fixed supply has zero incremental voltage and therefore becomes the reference node in the small-signal model.

Define $R_O=R_D\parallel r_o$ and $R_P=R_O\parallel R_L$, where $a\parallel b=ab/(a+b)$. Input voltage division and output Kirchhoff's current law giveConsequently the port voltage gain, overall source-to-output voltage gain, and load current gain magnitudes areThis current gain uses load electric current, not all the controlled-source electric current. It is also a different port definition from the historical emitter-to-collector current gain. Larger $R_s$ attenuates the input; smaller $R_L$ attenuates the output.

For a sinusoid input signal, use root mean square voltages. The power gain from accepted input signal power $P_i=v_i^2/r_i$ to useful load power $P_L=v_o^2/R_L$ isUnlike $|A_i|$, this tends to zero as either $R_L\to 0$ or $R_L\to \infty$. Differentiation givesThus matching the output electrical load maximizes delivered power in this unilateral resistive model. For fixed source voltage, input loading multiplies $P_L$ by $[r_i/(R_s+r_i){]}^2$; the accepted-input power gain above excludes the loss in $R_s$.

Choose $r_i=R_s=1\mathrm{k\Omega }$, $g_m=2\mathrm{mS}$, $r_o=20\mathrm{k\Omega }$, and $R_D=2\mathrm{k\Omega }$. Then $R_O=20/11\mathrm{k\Omega }$. With $R_L=2\mathrm{k\Omega }$ and $v_s=20\mathrm{mV}$ root mean square, the input is $10\mathrm{mV}$ and the inverted output has magnitude $19.0476\mathrm{mV}$ root mean square. Hence $P_i=0.100\mu \mathrm{W}$ and $P_L=0.181406\mu \mathrm{W}$: $G_P=1.81406$. These are calculated values of the chosen model, not historical measurements.

With the same parameters but $R_L=100\Omega$, $|A_i|=1.89573$ while $G_P=0.359381<1$. At $R_L=10\mathrm{k\Omega }$, $|A_v|=3.07692$ while $G_P=0.946746<1$. Neither current gain nor voltage gain alone establishes power gain.

For the direct current load line in the figure, choose $V_{DD}=6\mathrm{V}$, $I_Q=1\mathrm{mA}$ and $V_Q=4\mathrm{V}$, consistent with $V_Q=V_{DD}-R_D{I}_Q$. Locally extend the model as $I=I_Q+g_m{v}_i+(V-V_Q)/r_o$. With the external electrical load isolated at direct current, its intersection with $I=(V_{DD}-V)/R_D$ is $V=V_Q-g_m{R}_O{v}_i$. Keeping $|v_o|$ small compared with the available voltage headroom is essential; extrapolation to arbitrarily large signals would be unphysical.

At the chosen operating point the collector supply delivers $V_{DD}{I}_Q=6\mathrm{mW}$: $2\mathrm{mW}$ is dissipated in $R_D$ and $4\mathrm{mW}$ in the output device. Under a small signal, that energy flow is redistributed to provide load power. The incremental controlled current source hides the supply's steady energy flow; it does not create energy. A real complete amplifier also needs its input biasing network and has further losses. This calculation establishes neither its total efficiency nor a universal law for point-contact transistors.