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Occupation and the two-dimensional Fermi energy. For an independent single-particle state, the Fermi-Dirac distribution isThe chemical potential enforces the chosen mean particle number through $N={\sum }_{j}n({\epsilon }_j)$, including spin states in the sum. It is common to all states in particle-exchange equilibrium and must generally change with temperature or field when the total mean number is held fixed. At zero temperature, the distribution becomes a Heaviside step function at the Fermi energy.

Let the sample area be $\mathcal{S}$ and let $g_s$ be its internal spin spin degeneracy. In the continuum limit, filling the disk $k<k_F$ givesThereforeFor spin-half fermions with both spin states available, $g_s=2$ and ${\epsilon }_F=\pi {\hslash }^{2}N/(m\mathcal{S})$; for a spin-polarized gas $g_s=1$. The question does not specify the area or spin degeneracy, so these conventions must be stated rather than extracting an energy from $N$ alone. Although the original text calls $\mathbf{k}$ momentum, the supplied ${\hslash }^2{k}^2/(2m)$ dispersion makes it a wave vector; physical momentum is $\mathbf{p}=\hslash \mathbf{k}$. The result agrees with the constant two-dimensional free-electron density of states. Discrete level spacings in a finite sample would require a specified boundary spectrum.

One level occupied on average. Write $\delta ={\mu }_{B}B$ and $z=e^{\beta (\epsilon -\mu )}>0$. The two mean spin occupations areImposing $N_{+}+N_{-}=1$ gives $2+z(e^{\beta \delta }+e^{-\beta \delta })=1+z(e^{\beta \delta }+e^{-\beta \delta })+z^2$, hence $z^2=1$. Thus, for every positive temperature,The total magnetic moment is $\mathcal{M}=-{\mu }_B(N_{+}-N_{-})$. ConsequentlyThis is the grand-canonical spin susceptibility of a half-filled single level. Empty, singly occupied and doubly occupied orbital states are allowed in the grand canonical ensemble. At zero field, the singly occupied configurations together have probability $1/2$, explaining the factor of two relative to one permanent spin-half moment. If exactly one electron were required at all times, a canonical two-state partition function would instead give $\mathcal{M}={\mu }_B\tanh (\beta {\mu }_{B}B)$ and $\chi ={\mu }_B^2/(k_{B}T)$. That different answer does not implement the stated average-number constraint.

Density-of-states formula for the susceptibility. Here $g$ is the zero-field single-spin density of states. Regard its argument $E$ as the full spin-shifted energy. The shifted functions are $g_{\pm }(E)=g(E\mp {\mu }_{B}B)$, soThe total number is even in $B$; thus $\mu (B)=\mu (0)+O(B^2)$ at fixed total number on a smooth branch. More directly, terms from ${\mu }^{\prime }(0)$ cancel in the spin difference because the two densities coincide at zero field. To first order,It follows thatFor a physical energy band, take $g$ to vanish below its lower edge. Provided the endpoint term vanishes, integration by parts also givesThis form displays the positive response and the narrow thermal window around $\mu$. A sharp band edge is included by the corresponding distributional derivative in the first expression. The susceptibility defined here is the derivative of total magnetic moment with respect to $B$, with units $\mathrm{J}{\mathrm{T}}^{-2}$; it is not automatically a dimensionless SI volume susceptibility. A density-of-states convention per unit volume likewise gives a response per unit volume. These are the field conventions for magnetic susceptibility.

Chemical potential at fixed number. Define the integrated single-spin state countThe probability kernel $K_T$ has unit integral, mean $\mu$, and variance $a(k_{B}T{)}^2$. Using integration by parts,Expand $G$ about $\mu$. The linear term integrates to zero, while $G^{\prime \prime }=g^{\prime }$ givesThis is the number form of the Sommerfeld expansion. Since $N/2=G({\epsilon }_F)$ at zero temperature, set $\mu ={\epsilon }_F+\delta \mu$ with $\delta \mu =O(T^2)$:ThereforeThe coefficient can be obtained directly. With $y=(E-\mu )/(k_{B}T)$,For example, the sum follows by expanding $e^{-y}/(1+e^{-y}{)}^2$ on $y>0$, using the evenness of the kernel and integrating each exponential. Thus $a/2={\pi }^2/6$. A density of states increasing with energy gives a downward quadratic chemical-potential shift. For the constant two-dimensional density of states that shift vanishes to this order; a finite lower band edge still allows exponentially small corrections.

Low-temperature susceptibility at fixed number. Apply the same kernel expansion to $g$ itself:The shift of $\mu$ must be retained in the first term. Writing $g_F=g({\epsilon }_F)$ and similarly for its derivatives,ConsequentlyThis is the fixed-number low-temperature Pauli susceptibility. The $g_F^{\prime \prime }$ contribution is thermal broadening at fixed chemical potential; the $-g_F^{\prime 2}/g_F$ contribution enforces fixed total number. Both are needed. If the density of states were instead defined with both spin directions included, the prefactor $2$ would be absorbed into that definition. Only the spin response has been calculated; no orbital magnetic response is included.

The expansion assumes $g_F>0$, sufficient smoothness near the Fermi energy, and a temperature small compared with the energy scale over which $g$ changes or encounters a band edge. It does not apply unmodified at a singular density of states. For the ideal two-dimensional parabolic band, $g_F^{\prime }=g_F^{\prime \prime }=0$, so the leading Pauli response is temperature independent, consistently with the earlier state count.

For a single-particle state of energy $ϵ$, put $z=e^{\mu /(k_{B}T)}$. The equilibrium mean occupancies areThe Maxwell-Boltzmann distribution is the dilute classical limit. The Fermi-Dirac distribution applies to identical fermions with at most one particle in each complete single-particle state by the Pauli exclusion principle. The Bose-Einstein distribution applies to identical bosons with no such upper occupation bound. The chemical potential fixes total particle number; these are mean state occupancies, not three separately normalized single-particle probability densities. For a number-conserving ideal Bose gas, $\mu$ cannot exceed the lowest single-particle energy.

Take $\mathbf{k}$ to be a wavevector and count periodic-box states with cell volume $(2\pi {)}^3/V$ in momentum space, parameterized by $\mathbf{k}=\mathbf{p}/\hslash$. Write $g_s$ for internal degeneracy. The number of states in a spherical shell is $g_{s}V4\pi k^{2}dk/(2\pi {)}^3$. Since $ϵ=\alpha k$,Thus the one-particle canonical partition function isHere $\beta =1/(k_{B}T)$, $g_s=1$ for one nondegenerate branch, and $g_s=2$ for the spin-half case below. The integral uses ${\int }_0^{\infty }{u}^2{e}^{-u}du=2$. For classical indistinguishable particles, $Z_N=Z_1^N/N!$, givingThe factor three in the energy arises from the linear dispersion relation and three-dimensional state counting; the usual nonrelativistic quadratic-dispersion value $3N{k}_{B}T/2$ does not apply.

For spin-half fermions at $T=0$, all states up to the Fermi energy are occupied. With $g_s=2$,Integrating the occupied energy states givesThese are the corresponding ultrarelativistic ideal Fermi gas formulae with general slope $\alpha$. The nonzero ground-state internal energy and degeneracy pressure reflect the Pauli exclusion principle: particles cannot all occupy the lowest-momentum state. Formally extrapolating the classical equations gives $U,p\to 0$, but Maxwell–Boltzmann statistics is not valid at fixed positive $n$ as $T\to 0$.

At large $T$, the number equation gives $z\simeq N/Z_1\ll 1$, so expanding the Fermi-Dirac distribution recovers the Maxwell-Boltzmann distribution. A convenient crossover scale is the Fermi temperature,For $T\gg T_F$, both gases have $p\simeq n{k}_{B}T$. At fixed $n$, the Fermi curve begins at $p_0=n{ϵ}_F/4$, has zero initial slope, lies above the classical line, and approaches it at high temperature. For example its low-temperature expansion is $p/(n{ϵ}_F)=1/4+({\pi }^2/6)(T/T_F{)}^2+\cdots$. The plot evaluates the finite-temperature occupation integrals at fixed number density.

If the source's symbol $\mathbf{k}$ is interpreted literally as momentum rather than a wavevector, the state-space cell is $h^3/V$. In that convention replace $\alpha$ in the wavevector-based coefficients and energy scales above by $\hslash \alpha$. The dimensionless thermodynamics and the relation $p=U/(3V)$ are unchanged.

A quasi-Fermi level is a local electron or hole population parameter in a semiconductor driven out of equilibrium, assuming each population is internally close enough to thermal equilibrium to use a Fermi-Dirac distribution. Separate electron and hole parameters replace one common equilibrium chemical potential. Their spatial profiles depend on transport, generation and recombination as well as electrostatics. For ideal ohmic contacts with the p voltage $V$ relative to n, the contact electron electrochemical potentials obey ${\mu }_p-{\mu }_n=-eV$.

Single-electron superconducting tunneling transfers individual electrons across a barrier into or out of quasiparticle states of a material with superconductivity. In a normal-metal–insulator–superconductor junction, abbreviated NIS, only one electrode has superconductivity. Such a junction can reveal a superconducting energy gap without supporting a DC Josephson effect between two superconducting reservoirs.

For an elementary interpretation, assume an opaque barrier, approximately constant normal-electrode density of states, and an energy-independent tunneling matrix element over the range probed. Write the superconducting density of states divided by its normal-state value as $n_s(E)$, with $E$ measured from its chemical potential. A signed voltage convention chosen for positive normal-electrode injection giveswhere $f$ is the Fermi-Dirac distribution at a common temperature and $R_N$ is the normal-state junction electrical resistance. This current convention is local to the NIS measurement. The expression counts occupied initial and empty final states; it is a quasiparticle transport model, not a current-phase relation of a superconducting weak link.

An original analytic illustration uses the ideal fully gapped BCS theory spectrum at zero temperature, with positive gap edge $\Delta$:For positive $V$, the occupation difference restricts the integral to $0<E<eV$. Since $d\sqrt{E^2-{\Delta }^2}/dE=E/\sqrt{E^2-{\Delta }^2}$, integration and odd extension giveThe threshold is $\Delta /e$ for this NIS model. In the corresponding zero-temperature single-electron process between two fully gapped superconductors, creating excitations on both sides instead requires $|eV|\ge {\Delta }_1+{\Delta }_2$. That quasiparticle threshold does not forbid coherent pair electric current below it. At finite temperature, thermally populated quasiparticles soften the simple threshold argument.

At zero temperature in the NIS approximation, $R_{N}d{I}_{\mathrm{qp}}/dV=n_s(eV)$ away from the singular gap edge. Thus a voltage sweep probes the excitation density of states. The ideal divergence is rounded in real measurements, and at nonzero temperature the derivative samples a thermally broadened range of energies. For $|eV|>\Delta$, the model has $V{I}_{\mathrm{qp}}>0$: electrical work creates excitations and is dissipated on relaxation. This distinguishes its steady transport from the conservative Josephson coupling energy.

The Sommerfeld expansion approximates integrals weighted by the Fermi-Dirac distribution when $k_{B}T\ll \mu$ and $f$ is smooth near $\mu$. Applying it to the number integral at fixed particle number gives $\mu -E_F=-({\pi }^2/6)(k_{B}T{)}^2{g}^{\prime }(E_F)/g(E_F)+\cdots$. The sign depends on the slope of the density of states. For an unbounded parabolic band, $g(E)\propto E^{d/2-1}$, yielding opposite quadratic shifts in one and three dimensions. In two dimensions the leading algebraic shift vanishes, but the finite band-bottom cutoff still gives an exponentially small negative shift.

A finite-temperature measurement averages the oscillatory response over the derivative of the Fermi-Dirac distribution. For the fundamental harmonic and a locally constant cyclotron effective mass, this gives $R_T=X/\sinh X$ with $X=2{\pi }^2{k}_{B}T/(\hslash {\omega }_c)$. The oscillations become small when thermal smearing substantially exceeds their Landau-level spacing.

For symmetric touching parabolic dispersions with constant density of states $D$ per energy band, including spin degeneracy, charge neutrality fixes $\mu =0$. The Fermi-Dirac distribution gives $N_c=D{k}_{B}T\ln 2$ and the thermal internal energy, including electrons and holes, is $\Delta U=({\pi }^2/6)D(k_{B}T{)}^2$. Thus $C=({\pi }^2/3)D{k}_B^{2}T$. Its large ratio to $N_c$ is compatible with the equipartition theorem because this excitation count grows with temperature and the heat capacity includes both species.

Consider a planar surface with outward normal along $z$. For an auxiliary equilibrium electron gas just outside it, let $n_v$ be the total number density, counting both signs of $v_z$. Its Maxwell-Boltzmann velocity distribution has normal-component densityAn electron with $v_z>0$ crosses more area per unit time when it moves faster. The outgoing number flux therefore uses $v_z{f}_z$, rather than just the probability of $v_z>0$:This integral contributes only $T^{1/2}$. Holding a classical bulk number density fixed and imposing a normal kinetic energy threshold $W$ would instead give $\Gamma =n\sqrt{k_{B}T/(2\pi m_e)}{e}^{-W/(k_{B}T)}$; that argument alone does not produce $T^2$.

For the ideal surface model, measure external electron energies from the metal's chemical potential $\mu$. A freely propagating external state has $E-\mu =W+p^2/(2m_e)$. When $W\gg k_{B}T$, its Fermi-Dirac distribution reduces to the Maxwell–Boltzmann statistics tail. Counting two spin states per phase space cell of volume $h^3$ givesEach of the three Gaussian integrals supplies $T^{1/2}$. Combining this $T^{3/2}$ state count with the $T^{1/2}$ crossing factor givesThe auxiliary atmosphere supplies an equilibrium state-counting argument; an operating collector removes the outgoing electrons. It need not maintain a real equilibrium gas throughout the gap. Unit transmission and the ideal free electron state count are substantive assumptions, so this calculation does not determine an arbitrary real surface's measured $A$.

In particular, electrons inside a metal generally form a degenerate Fermi gas. A classical distribution for the escaping tail does not imply a classical distribution for the whole interior. Richardson himself emphasized this distinction in his lecture.^[ref]

For the uniform noninteracting electron model with two spin states and kinetic energy of nonrelativistic particles $E=p^2/(2m_e)$, count all available one-particle states up to an energy $E\ge 0$:This extensive density of states has units of inverse energy; $g(E)/V$ is the density of states per unit volume. Availability and occupation are different: $g(E)$ is positive above $E_F$, but at zero temperature those states are empty. The occupied energy distribution is $g(E)f(E)$, with the Fermi-Dirac distribution reduced to $f(E)=1$ below $E_F$ and $f(E)=0$ above it. The convention at the exact boundary does not affect a continuum integral.

With the dimensionless quantity $x=E/E_F$, the occupied count per $dx$, divided by the total particle number, is $3\sqrt{x}/2$ for $0<x<1$. Its area is one. Weighting this by $E$ gives the internal energy and its mean per particle:Thus the highest occupied energy and the mean energy differ. For the Fermi energy of a model electron gas, $U/N\simeq 1.0155\mathrm{eV}$. At fixed $N$, $E_F\propto V^{-2/3}$, so the derivative $P=-(\partial U/\partial V{)}_N$ gives the electron degeneracy pressure $P=2n{E}_F/5$. The same state-counting geometry therefore predicts a nonzero pressure at zero temperature.

A tunnel diode is a p-n junction with sufficiently heavy semiconductor doping on both sides to make a thin depletion region and permit substantial interband tunnelling. The neutral regions are degenerate semiconductors. Its distinctive forward current-voltage characteristic contains a peak followed by a valley: over part of the curve, increasing the applied electric potential difference decreases the electric current. The Esaki tunnel-diode experiment made this behavior experimentally concrete.

The useful quantity is the local slope, not the ratio of total voltage to total electric current. With conventional electric current $I$ entering the positive-voltage terminal, defineNegative differential resistance means $g_d<0$, hence $r_d<0$ where defined. A forward operating point can still have $V>0$, $I>0$ and absorbed power $VI>0$. A small voltage increase then gives a negative current increment; this does not make the total electric current negative or turn the device into an unlimited source of energy. The external supply sets the operating point and supplies the energy available for an electronic amplifier.

An original idealized construction explains the shape. Put the n-type semiconductor on the left and the p-type semiconductor on the right. Take $q>0$ as the elementary charge and $V=V_p-V_n$. Increasing forward bias lowers the right-hand electron energy levels relative to the left. Denote the two reservoir electrochemical potentials by ${\mu }_n,{\mu }_p$, so that ${\mu }_n-{\mu }_p=qV$. At zero temperature, occupied left-hand conduction band states extend up to ${\mu }_n$; empty right-hand valence band states start at ${\mu }_p$. For transfer conserving electron energy, the available interval isIt is nonempty only when its upper endpoint exceeds its lower endpoint. Both an occupied initial quantum state and an empty final quantum state must exist at the same energy. The Pauli exclusion principle prevents transfer into an already occupied final quantum state.

For the original diagram, choose arbitrary energy units with $E_{c,n}=-0.5$, ${\mu }_n=0$, ${\mu }_p=-u$ and $E_{v,p}=0.5-u$, where $u$ is $qV$ in those units. The available interval has widthThus $L(0.25)=0.25$, $L(0.50)=0.50$, $L(0.70)=0.30$, and $L(1.15)=0$. Initially forward bias opens a transfer window; further forward bias closes it by moving the right-hand valence band edge below the left-hand conduction band edge. This is a state-counting illustration, not a formula for a measured electric current.

For reverse bias, the transfer direction changes: occupied right-hand valence band states can feed empty left-hand conduction band states. In the same construction, $u=-0.70$ opens the interval $0<E<0.70$ for this reverse transfer. A narrow depletion region allows a large reverse quantum tunnelling electric current at small electric potential difference, whereas the ordinary Shockley diode equation predicts only a small reverse saturation electric current before diode reverse breakdown. At zero biasing, equal reservoir occupations give zero net electric current; quantum tunnelling does not require a net equilibrium flow.

A finite-temperature refinement replaces sharp occupation cutoffs with the Fermi-Dirac distribution. An illustrative weak-transfer expression isHere $\mathcal{W}\ge 0$ describes allowed initial/final quantum states and their coupling, and $f_n,f_p$ are Fermi-Dirac distributions with the respective electrochemical potentials. The occupation difference follows by subtracting the reverse transfer factor from the forward one: $f_n(1-f_p)-f_p(1-f_n)=f_n-f_p$. An overlap interval alone does not determine $\mathcal{W}$: transmission probability, density of states, crystal momentum selection and phonons can matter. A complete germanium calculation is more demanding than multiplying two constant density of states factors. At larger forward bias, ordinary carrier injection and diffusion supply a rising current branch even after direct band overlap is lost.

A common spherical model of a heavy nuclear charge distribution uses a half-density radius $c$ and surface diffuseness $a>0$. The normalization ${\rho }_0$ is fixed by $4\pi {\int }_0^{\infty }{r}^2\rho (r)dr=Ze$. The 90%-to-10% surface thickness is $t=4a\ln 3$: solve $\rho /{\rho }_0=0.9$ and $0.1$ and subtract the two radii. Typical fits have an approximately constant surface thickness and a radius scaling roughly as the cube root of mass number. This is a spatial density model, not an assertion of a thermal Fermi-Dirac distribution for nuclear positions.

For $M$ complete energy eigenstates of a one-particle Quantum Hamiltonian for identical noninteracting fermions, order their energies ${ϵ}_1\le \cdots \le {ϵ}_M$. At fixed particle number $0\le N\le M$, the Quantum Hamiltonian and the particle-number constraint areThe ground state occupies the $N$ lowest complete one-particle states. A short minimization argument suffices: moving an occupant from a higher energy to an empty lower energy decreases the total energy. This filling describes the ground state at temperature $T=0$; exclusion by itself also applies to excited quantum states and at positive temperature. The underlying thermal description is the Fermi-Dirac distribution.^[ref]

If the last occupied energy belongs to a group of $g$ one-particle states at the same energy and $q$ of them must be occupied, with all lower states filled, the ground state subspace has dimension $\left(\genfrac{}{}{0ex}{}{g}{q}\right)$. Exclusion does not select a particular basis or a particular quantum superposition in that subspace. The factor of two for an electron spatial orbital assumes both spin projections are included; a model restricted to one spin projection has only one state per spatial orbital. A magnetic field can split the degenerate energy levels, and interactions can change the lowest-energy electron configuration. Thus this finite noninteracting filling rule is not a complete prescription for interacting chemical atoms.