An electrostatic accelerator gives a charged particle kinetic energy by taking it through a sustained electric potential difference. Its ion source, accelerating tube and target form a particularly direct chain: prepare a charge, let an electric field do work, and measure what arrives or what the target emits. A vacuum reduces collisions with gas before the beam reaches its target. The Cockcroft-Walton generator supplies the potential by accumulating electric charge on capacitors.

A cyclotron repeatedly passes ions through an alternating electric field between two hollow electrodes called cyclotron dees. A nearly uniform magnetic field perpendicular to their plane bends the charged particles back toward the gap. Inside each cyclotron dee, ideal shielding suppresses the accelerating electric field, so each segment is a constant-speed circular motion. The next gap crossing increases the speed and the radius of curvature. The complete path consists of connected, progressively larger arcs, rather than one circle or a smooth spiral with continuous acceleration everywhere.

The striking feature is a timing cancellation: the longer arc traveled by a faster particle takes the same time. This cyclotron resonance condition lets one fixed radio frequency accelerate many successive gap crossings. The following construction and cyclotron energy and orbit radius example describe an ideal model; the Lawrence-Livingston cyclotron experiment explains what the builders actually measured.

A particle accelerator in which a beam gains kinetic energy along a substantially straight sequence of accelerating structures.

The Bevatron was a proton synchrotron at Berkeley. Its circulating beams supplied high-energy protons to fixed targets, producing secondary particles that could be selected and measured downstream. It played a central role in the 1955 discovery of the antiproton. ^[ref]

A fixed target makes the production threshold more demanding than simply supplying the new particle's rest energy: conservation of momentum requires outgoing motion, and conserved quantum numbers require accompanying particles. This is why accelerator beam energy, collision center-of-mass energy and produced-particle kinetic energy are different quantities.

A circular particle accelerator with bending fields and accelerating fields varied in coordination with the increasing beam momentum.

The Large Hadron Collider is a particle accelerator at CERN using two counter-circulating beams in a roughly 27-kilometre underground ring. It collides protons and can also operate with heavy ions. Superconducting magnets steer and focus the beams, while radiofrequency electric fields add energy along their direction of motion.^[ref]

The functional division matters: an ideal static magnetic field bends a particle's momentum without doing work, while the accelerating electric field changes its kinetic energy. ATLAS experiment and Compact Muon Solenoid surround collision points and reconstruct outgoing products; the accelerator itself supplies the incoming beams rather than measuring every final particle.

The region around a p-n junction with reduced mobile charge carrier density.

An illustrative abrupt-junction depletion approximation assumes uniform, fully ionized donor impurities and acceptor impurities, negligible mobile space charge in the depleted layer, and permittivity ${\epsilon }_s$. For area $A$, doping number densities $N_A,N_D$ and built-in electric potential difference $V_{\mathrm{bi}}$, it givesHere $q>0$ is the elementary charge and $V$ is positive for forward bias. Increasing both doping densities reduces $W$ in this estimate. That explains the preparation strategy for a tunnel diode; it does not make this sharp-depletion approximation a precise microscopic model of a degenerate semiconductor.

A tunnel diode is a p-n junction with sufficiently heavy semiconductor doping on both sides to make a thin depletion region and permit substantial interband tunnelling. The neutral regions are degenerate semiconductors. Its distinctive forward current-voltage characteristic contains a peak followed by a valley: over part of the curve, increasing the applied electric potential difference decreases the electric current. The Esaki tunnel-diode experiment made this behavior experimentally concrete.

The useful quantity is the local slope, not the ratio of total voltage to total electric current. With conventional electric current $I$ entering the positive-voltage terminal, defineNegative differential resistance means $g_d<0$, hence $r_d<0$ where defined. A forward operating point can still have $V>0$, $I>0$ and absorbed power $VI>0$. A small voltage increase then gives a negative current increment; this does not make the total electric current negative or turn the device into an unlimited source of energy. The external supply sets the operating point and supplies the energy available for an electronic amplifier.

An original idealized construction explains the shape. Put the n-type semiconductor on the left and the p-type semiconductor on the right. Take $q>0$ as the elementary charge and $V=V_p-V_n$. Increasing forward bias lowers the right-hand electron energy levels relative to the left. Denote the two reservoir electrochemical potentials by ${\mu }_n,{\mu }_p$, so that ${\mu }_n-{\mu }_p=qV$. At zero temperature, occupied left-hand conduction band states extend up to ${\mu }_n$; empty right-hand valence band states start at ${\mu }_p$. For transfer conserving electron energy, the available interval isIt is nonempty only when its upper endpoint exceeds its lower endpoint. Both an occupied initial quantum state and an empty final quantum state must exist at the same energy. The Pauli exclusion principle prevents transfer into an already occupied final quantum state.

For the original diagram, choose arbitrary energy units with $E_{c,n}=-0.5$, ${\mu }_n=0$, ${\mu }_p=-u$ and $E_{v,p}=0.5-u$, where $u$ is $qV$ in those units. The available interval has widthThus $L(0.25)=0.25$, $L(0.50)=0.50$, $L(0.70)=0.30$, and $L(1.15)=0$. Initially forward bias opens a transfer window; further forward bias closes it by moving the right-hand valence band edge below the left-hand conduction band edge. This is a state-counting illustration, not a formula for a measured electric current.

For reverse bias, the transfer direction changes: occupied right-hand valence band states can feed empty left-hand conduction band states. In the same construction, $u=-0.70$ opens the interval $0<E<0.70$ for this reverse transfer. A narrow depletion region allows a large reverse quantum tunnelling electric current at small electric potential difference, whereas the ordinary Shockley diode equation predicts only a small reverse saturation electric current before diode reverse breakdown. At zero biasing, equal reservoir occupations give zero net electric current; quantum tunnelling does not require a net equilibrium flow.

A finite-temperature refinement replaces sharp occupation cutoffs with the Fermi-Dirac distribution. An illustrative weak-transfer expression isHere $\mathcal{W}\ge 0$ describes allowed initial/final quantum states and their coupling, and $f_n,f_p$ are Fermi-Dirac distributions with the respective electrochemical potentials. The occupation difference follows by subtracting the reverse transfer factor from the forward one: $f_n(1-f_p)-f_p(1-f_n)=f_n-f_p$. An overlap interval alone does not determine $\mathcal{W}$: transmission probability, density of states, crystal momentum selection and phonons can matter. A complete germanium calculation is more demanding than multiplying two constant density of states factors. At larger forward bias, ordinary carrier injection and diffusion supply a rising current branch even after direct band overlap is lost.

The built-in potential of a p-n junction is the electrostatic potential difference established when carrier diffusion exposes ionized dopants until the opposing drift and diffusion currents balance. The equilibrium electrochemical potential is constant even though the electric potential and band edges vary. In a nondegenerate homojunction with neutral-edge majority densities $p_p,n_n$, $e{V}_b=k_{B}T\log (p_p{n}_n/n_i^2)$. This is band bending within the same material, not necessarily a discontinuous offset of different materials' band edges.

A linearly graded p-n junction has net ionized doping $N_D-N_A=\alpha x$ near the metallurgical junction. In the depletion approximation, $\rho =e\alpha x$. With vanishing external field, neutrality places the depletion edges at $\pm w/2$ and integration of Poisson equation givesThe field points from n to p and has largest magnitude $e\alpha w^2/(8{\epsilon }_s)$ at $x=0$. The potential is cubic inside the layer.