Past exam of the physics A course of the University of Cambridge / 2019 / Paper 2 / Section D

A wave propagates an organized disturbance through space. What oscillates depends on the medium: displacement in a string or solid, pressure and density in a fluid, electric fields and magnetic fields in an electromagnetic wave, or a quantum wavefunction. The propagation law follows from the restoring mechanism, inertia and relevant boundary conditions. A common linear equation is $u_{tt}=c^2{\nabla }^{2}u$, whose plane waves obey $\omega =c|\mathbf{k}|$. The resulting phase velocity and group velocity coincide, so a narrow wave packet can travel without dispersive spreading. More generally the material supplies a dispersion relation $\omega (\mathbf{k})$; the envelope velocity is ${\nabla }_{\mathbf{k}}\omega$, while constant phase surfaces move at the corresponding phase velocity.

Mechanical waves make the balance of restoring force and inertia particularly visible. A flexible stretched string has $c=\sqrt{T/\mu }$: greater tension stiffens the string, whereas greater linear mass density slows its transverse motion. Small-amplitude acoustic waves in a uniform fluid are longitudinal, with $c_s=\sqrt{K_s/\rho }$, where $K_s$ is the adiabatic bulk modulus. For an ideal gas, $c_s=\sqrt{\gamma p/\rho }$. Pressure changes in rapid sound oscillations are approximately adiabatic because little heat crosses a wavelength in one period. Fluids do not support ordinary bulk shear waves, whereas an elastic solid supports both longitudinal and transverse waves. In an isotropic solid their speeds are $c_L=\sqrt{(K+4G/3)/\rho }$ and $c_T=\sqrt{G/\rho }$, where $G$ is the shear modulus.

A material can be dispersive even when its equilibrium properties are uniform. In a liquid with a free surface, gravity and surface tension act as restoring mechanisms. A simple inviscid capillary-gravity wave haswhere $h$ is depth and ${\gamma }_s$ is surface tension. Long shallow gravity waves have approximately constant speed $\sqrt{gh}$; deep-water gravity waves have $\omega =\sqrt{gk}$ and group velocity half their phase velocity. Short capillary waves have a different dispersion dominated by surface tension. Bending stiffness similarly changes short-wavelength propagation in a string or plate, giving a contribution proportional to $k^4$ in ${\omega }^2$. Different restoring mechanisms can therefore control different wavelength ranges of the same medium.

Electromagnetic waves propagate in vacuum without material displacement, because Maxwell equations couple changing electric and magnetic fields. They are transverse and travel at $c=1/\sqrt{{ϵ}_0{\mu }_0}$. In a simple transparent isotropic material, the phase speed is $1/\sqrt{ϵ\mu }=c/n$, where $n$ is the refractive index. Real material polarization depends on frequency. A Lorentz oscillator model for bound charges explains why permittivity and refractive index become strongly frequency dependent near material resonances, accompanied by absorption. In a birefringent medium, different field polarizations have different propagation constants, permitting wave plates and mode-dependent delays. A electrical conductor additionally supports dissipative currents; its complex wavenumber gives attenuation and, for a good conductor, a skin depth approximately $\sqrt{2/(\mu \sigma \omega )}$. Energy removed from the wave becomes heat rather than disappearing.

At an interface, frequency is conserved for stationary media, and tangential wave phase must match. These conditions give Snell's law for refraction and constrain reflected and transmitted directions. Amplitudes follow from continuity of the appropriate fields or mechanical forces. On strings the relevant mechanical impedance is $\sqrt{T\mu }$; for sound it is related to $\rho c_s$, and for electromagnetic waves to $\sqrt{\mu /ϵ}$. A mismatch gives wave reflection, and a lossless boundary conserves the total incident, reflected and transmitted power. Multiple reflections can reinforce or cancel, as in a Fabry–Pérot etalon. Total internal reflection and other boundary conditions confine waves in waveguides. Transverse modes then become discrete, and even an otherwise nondispersive material develops longitudinal cutoffs and wave dispersion. A membrane strip, for example, obeys ${\omega }_n^2=c_m^2[k^2+(n\pi /a{)}^2]$.

Propagation also involves transport and loss. The Poynting vector gives electromagnetic energy flux; mechanical energy transport is force or pressure times velocity, averaged over a cycle. Wave absorption, viscosity, electrical resistance and imperfect boundaries dissipate energy. Scattering redistributes energy into other directions and modes, while geometric spreading reduces local intensity without necessarily dissipating anything. These mechanisms should be distinguished when interpreting a decreasing measured amplitude. In strongly absorbing or rapidly varying dispersive regimes, the derivative called group velocity is not automatically the speed of a sharp signal front; pulse reshaping and the medium's causal response must be considered.

Finally, quantum matter waves illustrate how the same propagation mathematics can describe a different physical quantity. For a free nonrelativistic particle, $\omega =\hslash k^2/(2m)$, so the group velocity $\hslash k/m$ equals its particle velocity and differs from the phase speed $\hslash k/(2m)$. In a periodic crystal, Bloch's theorem replaces the free dispersion by energy bands. Their slope controls wave-packet velocity, $v_g={\hslash }^{-1}dE/dk$, and their curvature gives band effective mass. Thus mechanical confinement, material response and microscopic periodicity all reshape propagation through their allowed modes and dispersion, while the physical interpretation of the wave and its transported quantities remains essential.

The Hall effect is a transverse electric response to a magnetic force on moving charge carriers. Take conventional current density $\mathbf{J}=J_x\hat{\mathbf{x}}$ and magnetic field $\mathbf{B}=B_z\hat{\mathbf{z}}$ in a conducting slab. For one carrier type of number density $n$ and signed electric charge $q$, the drift velocity is ${\mathbf{v}}_d=\mathbf{J}/(nq)$. Carriers initially deflect sideways until a Hall electric field balances the magnetic Lorentz force:The Hall coefficient is thereforeFor Electrons it is $-1/(ne)$, whereas a simple hole-dominated conductor gives $+1/(pe)$. The sign reveals the effective carrier sign; the magnitude estimates their density in the one-carrier approximation.

For width $w$ along $y$ and thickness $t$ along $z$, $I=J_{x}wt$. Define the signed Hall voltage by $V_H=E_{y}w$, namely the electric potential at the lower-$y$ edge minus that at the higher-$y$ edge. ThenThis explicit contact convention fixes the voltage sign. A Hall bar with longitudinal and transverse contacts measures both electrical resistivity and the Hall response. Reverse the field and take the part of the transverse voltage odd in $B_z$ to suppress longitudinal-voltage pickup from misaligned contacts; reversing current provides another useful check.

A Hall measurement is useful for carrier identification, semiconductor doping measurements and magnetic-field sensing. Combining a one-carrier $R_H$ with electrical conductivity gives a mobility magnitude $\mu =\sigma |R_H|$. However, mixed Electron and hole conduction is not described by a single density: in weak fields,The response weights mobilities differently from ordinary conductivity. Complicated energy bands, anisotropic Fermi surfaces and multiple bands can likewise change the simple interpretation in metals; a positive Hall coefficient does not mean that the material contains positively charged fundamental Electrons.

Semiconductor doping introduces controlled impurities to alter equilibrium carrier populations and electrical conductivity. In an intrinsic semiconductor, thermally excited Electrons in the conduction band and electron holes in the valence band have equal densities $n=p=n_i$. A shallow donor impurity, such as phosphorus in silicon, supplies an Electron from an impurity level just below the conduction-band edge. Once ionized it is positively charged, and the material is n type. An acceptor impurity, such as boron in silicon, accepts a valence Electron into a level just above the valence-band edge, leaving a mobile hole and a negatively charged ionized impurity; the material is p type.

With dopant densities $N_D,N_A$, charge neutrality requiresFor fully ionized, nondegenerate dopants at equilibrium, the semiconductor mass-action law gives $np=n_i^2$. In a substantially n-type sample, $N_D-N_A\gg n_i$, soThe corresponding p-type result is $p\simeq N_A-N_D$ and $n\simeq n_i^2/(N_A-N_D)$. The majority population grows while the minority population decreases; adding donors does not simply add equal numbers of free Electrons and holes.

The Fermi energy shifts toward the conduction band for n-type material and toward the valence band for p-type material. In the nondegenerate approximation,where $N_C,N_V$ are effective band-edge state densities. At very low temperature, dopants may not be ionized and carrier freeze-out occurs. At intermediate temperatures, ionized dopants dominate the carrier density; at sufficiently high temperature, intrinsic excitation can dominate. Heavy doping can produce degenerate carrier statistics, invalidating these Boltzmann expressions.

The electrical conductivity is $\boxed{\sigma =e(n{\mu }_e+p{\mu }_h)}$. Doping usually raises the majority carrier density, but ionized impurity scattering can lower mobility, so conductivity need not scale indefinitely with dopant concentration. Joining p-type and n-type regions creates a p-n junction, with a depletion region and built-in electric field established by carrier diffusion and compensating drift. The fixed ionized dopants, not an absence of all charge, account for the depleted region's net charge density.

In a metal, mobile Electrons transport heat as well as electric charge. A temperature gradient creates an imbalance between carriers arriving from warmer and colder regions. The resulting heat current obeys Fourier's law ${\mathbf{j}}_Q=-\kappa \nabla T$ for an isotropic material, where thermal conductivity $\kappa$ has units $\mathrm{W}{\mathrm{m}}^{-1}{\mathrm{K}}^{-1}$. For a bar of area $A$ carrying steady heat flow $P$, $P=-\kappa AdT/dx$ when parasitic losses are negligible.

A kinetic estimate for the electronic contribution iswhere $C_e$ is the electronic heat capacity per volume, $v_F$ the Fermi velocity, and ${\ell }_{\kappa }=v_F{\tau }_{\kappa }$ the heat-transport mean free path. Fermi-Dirac statistics and the Pauli exclusion principle restrict thermal rearrangements to states near the Fermi surface, rather than allowing every Electron to contribute a classical heat capacity. A degenerate parabolic band givesUsing the Drude model form $\sigma =n{e}^2{\tau }_{\sigma }/m$ for electrical transport, the relation between thermal and electrical relaxation times in metals becomesFor scattering that relaxes heat and charge currents similarly, ${\tau }_{\kappa }\simeq {\tau }_{\sigma }$ and the Wiedemann-Franz law follows:Thus good electrical conductors are usually good thermal conductors. The correct quantum Lorenz number differs from a naive classical electron-gas estimate.

Scattering from impurities, boundaries and phonons limits the heat-transport path. In an impurity-dominated low-temperature regime with approximately constant relaxation time, ${\kappa }_e$ is approximately proportional to $T$. Where phonon-limited electrical resistivity is proportional to $T$ and the Wiedemann-Franz approximation is applicable, ${\kappa }_e$ can be roughly temperature independent. Inelastic processes can relax heat and charge currents differently, so the Lorenz ratio is not universal at all temperatures. Lattice phonons add a separate positive thermal contribution; the measured total is $\kappa ={\kappa }_e+{\kappa }_{\mathrm{ph}}$, and the electronic Wiedemann-Franz expression should not be applied blindly to that total.