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The fractional quantum Hall effect is quantized transverse sheet conductivity at fractional filling factors, produced by interacting electrons. The Laughlin wavefunction describes the sequence $\nu =1/m$, with odd $m$, including $\nu =1/3$.^[ref]

For an original ideal readout example, take a Hall bar on the $\nu =1/3$ plateau with negligible longitudinal sheet conductivity. The quantum Hall conductivity tensor inversion givesHere $R_K$ is the von Klitzing constant; $R_H$ denotes transverse electrical resistance, rather than the bulk Hall coefficient. Thus a fractional sheet conductivity corresponds to a larger transverse electrical resistance. The fraction labels a collective quantum state: it does not mean that each electron has acquired one third of its usual electric charge.

Andre Geim, Konstantin Novoselov and collaborators mechanically cleaved graphite, identified thin flakes, and fabricated multi-terminal Hall bars on oxidized silicon. A substrate gate changed the carrier density; longitudinal electrical resistance and the Hall coefficient supplied different checks. The 2004 report included one-, two- and three-layer devices and described a few-layer semimetal interpretation. Layer identification and electrical control were separate experimental achievements.^[ref]

The 2005 monolayer study used an optical microscope, electron microscopy and atomic force microscopy to select monolayers. It then measured Shubnikov-de Haas oscillations as temperature, gate voltage and magnetic field varied. Their damping inferred a density-dependent cyclotron effective mass; comparison with oscillation frequency tested a linear dispersion relation. A comparison with two-layer devices also distinguished their quantum Hall effect sequences. These are complementary tests of the monolayer model, rather than consequences of finding a thin-looking flake alone.^[ref]

A Hall bar is a strip with current contacts at its ends and additional voltage contacts along its sides. Opposite-side contacts measure a transverse electric potential difference; same-side contacts at different longitudinal positions measure a longitudinal electric potential difference. Separate voltage leads reduce the influence of current-contact electrical resistance when their input electric currents are negligible.

Voltage contacts separated along the current direction measure longitudinal resistance, even when the device is called a Hall bar. For an approximately uniform rectangular strip, $R_{xx}\simeq {\rho }_{xx}L/W$. Transverse contacts measure $R_{xy}$ instead. Shubnikov-de Haas effect oscillations in $R_{xx}$ need not be Hall-resistance plateaus; in the integer quantum Hall effect, longitudinal minima accompany quantized transverse plateaus.

A sufficiently clean two-dimensional electron gas at low temperature in a perpendicular magnetic field has quantized orbital Landau levels. In the integer quantum Hall regime, the longitudinal resistivity is nearly zero while the Hall resistance has plateauxThe Hall sign depends on carrier charge and lead convention. Fractional plateaux can occur in strongly interacting states, but the following single-particle counting and calibration use the integer effect.

One resolved spin branch of a Landau level has one state per flux quantum $h/e$: in area $A$, its guiding-centre degeneracy is $Ae{B}_z/h$ for positive $B_z$. Defining the nominal filling factor as the number of electrons per available orbital state givesThe same count follows in Landau gauge: a $2\pi /L_y$ increment in $k_y$ moves the orbit centre by $2\pi {\ell }_B^2/L_y$, giving $A/(2\pi {\ell }_B^2)=Ae{B}_z/h$ states. Include each spin branch separately; an unresolved spin-degenerate orbital level contains twice this count, and common plateau indices are then even.

Plateau qualification: $\nu$ as defined by density is continuous when $B_z$ changes at fixed $N_S$. The integer plateau index $p$ can remain unchanged over a field interval because localized states accommodate the changing occupation. Therefore $N_S=pe{B}_z/h$ is not an exact identity across an entire plateau. It is the ideal filled-level relation, often used approximately at a suitable plateau centre; confusing the nominal filling with the plateau index would contradict fixed density.

The plateau resistance realizes the von Klitzing constant $R_K=h/e^2\simeq 25812.8\Omega$, divided by a known integer. A four-terminal Hall measurement with negligible longitudinal voltage and contacts in the quantized regime supplies a reproducible resistance reference, which can be compared to other resistors using precision bridges. Its robustness comes from the quantized transport state, not from measuring the Hall bar's width accurately.

A completely filled valence band carries no net current: its occupied crystal-momentum states have velocities that cancel. Near a valence-band maximum, an almost full band is conveniently described by the few missing electrons, or electron holes. Removing an electron of charge $-e_0$, with $e_0>0$, changes the charge relative to the filled band by $+e_0$. This is a quasiparticle description of electronic motion, not a mobile positive ion or a Positron.

For an isotropic parabolic maximum, ${ϵ}_v(\mathbf{k})=E_v-{\hslash }^2{k}^2/(2m_h^{\ast })$. Assign the missing-electron state momentum ${\mathbf{k}}_h=-{\mathbf{k}}_e$ and hole energyIt has positive effective mass $m_h^{\ast }$. Its velocity equals the velocity of the missing electron state, and its positive-charge current replaces the negative of that state's electronic current. Semiclassical motion is thus $\hslash {\dot{\mathbf{k}}}_h=+e_0(\mathbf{E}+{\mathbf{v}}_h\times \mathbf{B})$. With momentum relaxation time ${\tau }_h$, the low-field mobility is ${\mu }_h=e_0{\tau }_h/m_h^{\ast }$ andIf electrons also contribute, $\sigma =e_0(p{\mu }_h+n{\mu }_e)$: the two species' longitudinal conductivities add.

A Hall bar separates carrier concentration from mobility. Apply current density $j_x$, magnetic field $B_z$, and measure transverse electric field $E_y$. For one isotropic hole population, transverse force balance gives $E_y=v_x{B}_z$, soFor thickness $t$, the Hall-voltage magnitude is $|V_H|=IB/(e_{0}pt)$. A longitudinal four-terminal resistance measurement supplies $\sigma$ independently. Use ohmic contacts, known conducting thickness, controlled temperature and low enough current to avoid self-heating. Reversing magnetic field removes even-in-field longitudinal offsets from contact misalignment; reversing current also helps reject thermoelectric offsets. These are central controls, rather than merely taking one transverse voltage reading.^[ref]

The simple inference assumes one carrier type and a known Hall scattering factor. More generally $R_H=r_H/(e_{0}p)$, so $\sigma R_H$ measures Hall mobility rather than automatically the drift mobility. With two carrier populations at weak field,Its sign alone need not identify the more numerous carrier. A Hall experiment also cannot determine $m_h^{\ast }$ and ${\tau }_h$ separately: their ratio sets mobility. cyclotron resonance supplies an independent mass measurement by sweeping frequency or magnetic field through $\omega =e_{0}B/m_c$ and detecting resonant absorption. The measured cyclotron effective mass can depend on band anisotropy and need not equal every curvature mass; the isotropic parabolic model identifies them. Its linewidth provides a scattering-time estimate only with a specified damping model.

semiconductor doping generates holes by adding acceptor impurities. In silicon, a substitutional group-III atom such as boron provides one fewer valence electron than silicon. A shallow acceptor level lies slightly above the valence-band edge: accepting a valence electron makes the dopant negatively ionized and leaves a mobile hole in the valence band. The impurity stays fixed in the lattice. charge neutrality and the nondegenerate equilibrium mass-action law giveFor fully ionized, uncompensated acceptors in the extrinsic regime, $p\simeq N_A$ and $n\simeq n_i^2/N_A$; with fully ionized donor compensation, $p\simeq N_A-N_D$ while holes remain dominant. The Fermi level moves towards the valence band. At low temperature, semiconductor carrier freeze-out suppresses mobile electron holes; at high temperature intrinsic electron-hole generation can dominate. Increasing dopant density also changes scattering, so a conductivity increase alone cannot distinguish increased carrier density from changed mobility. Temperature-dependent Hall and conductivity measurements separate these effects, subject to the carrier and scattering qualifications above.

The Hall effect is a transverse electric response to a magnetic force on moving charge carriers. Take conventional current density $\mathbf{J}=J_x\hat{\mathbf{x}}$ and magnetic field $\mathbf{B}=B_z\hat{\mathbf{z}}$ in a conducting slab. For one carrier type of number density $n$ and signed electric charge $q$, the drift velocity is ${\mathbf{v}}_d=\mathbf{J}/(nq)$. Carriers initially deflect sideways until a Hall electric field balances the magnetic Lorentz force:The Hall coefficient is thereforeFor electrons it is $-1/(ne)$, whereas a simple hole-dominated conductor gives $+1/(pe)$. The sign reveals the effective carrier sign; the magnitude estimates their density in the one-carrier approximation.

For width $w$ along $y$ and thickness $t$ along $z$, $I=J_{x}wt$. Define the signed Hall voltage by $V_H=E_{y}w$, namely the electric potential at the lower-$y$ edge minus that at the higher-$y$ edge. ThenThis explicit contact convention fixes the voltage sign. A Hall bar with longitudinal and transverse contacts measures both electrical resistivity and the Hall response. Reverse the field and take the part of the transverse voltage odd in $B_z$ to suppress longitudinal-voltage pickup from misaligned contacts; reversing current provides another useful check.

A Hall measurement is useful for carrier identification, semiconductor doping measurements and magnetic-field sensing. Combining a one-carrier $R_H$ with electrical conductivity gives a mobility magnitude $\mu =\sigma |R_H|$. However, mixed electron and hole conduction is not described by a single density: in weak fields,The response weights mobilities differently from ordinary conductivity. Complicated energy bands, anisotropic Fermi surfaces and multiple bands can likewise change the simple interpretation in metals; a positive Hall coefficient does not mean that the material contains positively charged fundamental electrons.

Take the two-dimensional electron gas in the $xy$ plane, the Hall bar along $x$, and $\mathbf{B}=B\hat{\mathbf{z}}$ with $B>0$ perpendicular to it. An electron has charge $-e$. The confining electron potential energy $U(y)$ is approximately flat inside a wide strip and rises at either boundary; smooth quenched disorder adds hills and valleys. For a slowly varying edge, each spin-resolved Landau level approximately followsHere $s=\pm 1$, and $Y$ is the guiding centre. For $\mathbf{A}=(-By,0,0)$, $Y={\ell }_B^2{k}_x$ and the edge group velocity isThus electrons move along $+x$ at the upper edge and $-x$ at the lower edge. The Lorentz force gives counterclockwise bulk cyclotron motion in this convention. At a hard boundary its interrupted circles become directed skipping orbits; a smooth boundary gives the corresponding guiding-centre drift. Smooth bulk quenched disorder generally gives closed drift contours around localized hills or valleys, with extended trajectories appearing near a broadened level's critical energy. Realistic electrostatic screening can produce alternating compressible quantum Hall edge strips and incompressible quantum Hall edge strips, so the unscreened bending curves are an effective sketch rather than an exact self-consistent edge profile.

In the original diagram, contacts are ordered around the electron propagation direction: upper-left $1\to 2\to 3$, then lower-right $4\to 5\to 6$. Let $I_1=I$, $I_4=-I$ and the other leads be ideal equilibrating voltage probes. Define $R_H=(V_2-V_6)/I$ and $R_{xx}=(V_2-V_3)/I$. These choices fix the voltage sign; reversing the field reverses chirality and the Hall polarity. For spin-resolved plateau index $N$,At fixed sheet carrier density and increasing field, $N$ decreases, giving successively higher Hall plateaus; longitudinal peaks occur between them. Unresolved spin branches can suppress odd plateaus. The sketch uses resistance magnitudes, and every integer step is not promised in an arbitrary sample.

For Fermi-energy oscillations in a two-dimensional electron gas, first distinguish fixed density from fixed reservoir chemical potential. At negligible temperature the former is determined by state counting. Each resolved Landau level contains $eB/h$ states per unit area, soIgnoring spin and broadening for the counting illustration, if $N<\nu <N+1$ then $N$ levels are full and level $N$ is partly full: $\mu =E_N$. At fixed $n_s$, increasing $B$ increases both level energy and degeneracy. The partly filled level rises in energy until the lower levels can contain all electrons; $\mu$ then drops to the next lower level. The resulting sawtooth is periodic in $1/B$, with $\Delta (1/B)=e/(n_{s}h)$ per resolved branch. At an exactly integer filling in an ideal gap, any chemical potential within the gap gives the same zero-temperature particle number; the plotted discontinuity denotes its limiting values.

At fixed $B$ while $n_s$ increases, the ideal chemical potential stays at a partly occupied level and steps upward after each additional density $eB/h$. It therefore has a staircase superposed on the rising zero-field trend, not a repeated downward sawtooth. Landau-level broadening and finite temperature smooth both ideal graphs. With an externally pinned chemical potential, density changes instead; the fixed-density sawtooth cannot simultaneously be imposed. In a realistic disordered sample, the Fermi energy sweeps localized states between transport-carrying level centres. The following schematic omits spin for clarity and does not attempt an interaction-corrected density of states.

For $N$ transmitted spin-resolved quantum Hall edge states, the Landauer-Büttiker formula reduces, in that contact order, toZero probe currents imply $V_2=V_3=V_1$ and $V_5=V_6=V_4$. Hence $I=(N{e}^2/h)(V_1-V_4)$ and the boxed resistance results follow. The spin-resolved conductance quantum arises because the one-dimensional density of states times velocity is $1/h$ per unit energy; a reservoir imbalance supplies $e^2\Delta V/h$ per channel. Its value does not depend on edge slope or sample width.

On a plateau, opposite-moving edge channels are separated by a wide bulk with a mobility gap. Ordinary elastic scattering on one edge has no counterpropagating channel into which to reflect; closed bulk orbits do not connect the contacts. Changing $B$ or $n_s$ can alter the occupancy of localized states without changing the number of transmitting edge channels. This accounts for the finite plateau width, which an entirely clean set of sharp levels would not explain. Accuracy requires negligible backscattering between opposite edges, low enough current to avoid breakdown, equilibrating contacts and negligible probe loading. The finite-width plateau and the precision of its quantized value are related but distinct observations.

An antidot is a depleted potential hill, not a potential well. Its closed edge circulates oppositely to the outer boundary. In a constriction, tunnelling through an antidot orbit can transfer an electron from a forward edge into the returning edge: resonant antidot backscattering produces conductance dips. For $N$ otherwise open spin-resolved channels and one active resonance,At symmetric coupling a single resonance can remove $e^2/h$; asymmetry or thermal averaging reduces its depth. If the background constriction is closed and the resonant route instead supplies forward transmission, peaks occur. The lead connectivity must therefore accompany the conductance sketch. In the fixed-area single-particle limit, successive alignments change enclosed flux by ${\Phi }_0=h/e$, giving the Aharonov-Bohm antidot periodThe effective orbit area, not merely the etched island area, enters. Charging, screening and spin can modify this simple sequence; two coupled spin branches can yield a near-$h/(2e)$ pattern without changing the elementary flux quantum.^[ref]

A Landau quasiparticle is an electron-like excitation dressed by the interacting medium. Adiabatic continuity connects low-energy states of an ordinary Fermi liquid to those of a free Fermi gas without changing their particle statistics or conserved quantum numbers. The excitation has a renormalized dispersion, effective mass, magnetic response and finite lifetime. Pauli exclusion principle restricts collisions near the Fermi surface; in a regular three-dimensional Fermi liquid,Thus the width is small compared with excitation energy sufficiently near the surface at low temperature. This permits particle-like counting and transport even when microscopic interactions are strong. It does not make every interaction disappear: the Landau quasiparticle energy functional contains residual interactions,Specific heats and magnetic susceptibilities need not equal their bare-gas values. Logarithmic corrections can modify the lifetime scale in two dimensions, and a Luttinger liquid or a fractional Hall fluid is not an ordinary weakly perturbed electron gas.

An electron-like excitation in a normal metal and a neutral fermionic excitation in normal helium-3 are Landau quasiparticles. More generally, phonons, magnons and excitons are particle-like collective excitations, with their own statistics and quantum numbers; they are not all Landau quasiparticles. composite fermions are another emergent description, reorganizing correlations in a partly occupied Landau level rather than simply replacing the electron mass in an ordinary band.

Attach two statistical flux quanta ${\Phi }_0=h/e$ to each electron. Even attachment preserves fermionic exchange statistics, while the average statistical field opposes the applied field:This is an effective description of correlations, not literal flux tubes produced by small solenoids. An integer number of filled effective levels can give an incompressible electronic fractional Hall state. This is the correspondence between integer Hall quantization of composite fermions and selected fractional Hall states of electrons.^[ref]

Setting the signed effective filling to integer $p$ givesPositive $p$ gives $1/3,2/5,3/7,\dots$ below $1/2$. Negative $p=-q$, $q>0$, gives $q/(2q-1)$ above it, including $2/3,3/5,4/7,\dots$. The sign records reversed $B^{\ast }$. At $\nu =1/2$, the mean effective field vanishes, so the simplest description is a compressible composite-fermion sea rather than another member with finite integer $p$. Fractional charged excitations of gapped Hall states and the charge used in this semiclassical composite-fermion orbit description should not be conflated.

A direct probe away from the incompressible fractions is composite-fermion geometric resonance. One implementation patterned a high-mobility GaAs/AlGaAs Hall bar into periodic and random antidot arrays. electron beam lithography followed by an approximately $130\mathrm{nm}$ reactive-ion etch made arrays with periods $400$–$700\mathrm{nm}$. Four-terminal low-current measurements swept a perpendicular magnetic field at low temperature; red-light illumination varied density and the modulation. Periodic arrays showed commensurability structure near half filling and a Hall anomaly; matched random arrays did not. Unpatterned sections supplied another reference.^[ref]

The semiclassical explanation uses, for a fully spin-polarized sea,The mass cancels from the orbit radius. A selected orbit fits the lattice when $2R_c^{\ast }\simeq Ca$, with a geometry-dependent constant $C$ of order unity. Pinned orbits around antidots then alter longitudinal transport, producing features nearThe simplest single-antidot scale has $C\simeq 1$; detailed peak positions require the actual potential and orbit family. The two field directions bend orbits oppositely. The diagnostic is an orbit scale controlled by the small residual $B^{\ast }$, rather than the much larger applied $B$. At the same density the fully polarized $k_F^{\ast }$ is $\sqrt{2}$ times the zero-field spin-degenerate electron value; this is an independent counting test.

Calibrate density from independent Hall/filling measurements and compare several lattice periods. Use small excitation and temperature sweeps, and check periodic, random and unpatterned regions. Density variation changes both $B_{1/2}$ and the orbit scale, so simply plotting against uncorrected field can mislead. mean free path and density inhomogeneity limit resolution; illumination can soften or substantially change the imposed potential, so it cannot automatically be treated as density adjustment alone. These qualifications are part of the inference from geometry to emergent particles, rather than a claim that every feature near half filling is a new fractional plateau.

Integer Hall transport and filling. A clean two-dimensional electron gas at low temperature in a strong perpendicular magnetic field forms Landau levels with orbital spacing $\hslash {\omega }_c$, where ${\omega }_c=e|B|/m^{\ast }$. Examples include semiconductor heterojunctions and inversion layers. On integer plateaus,with integer plateau index $\nu$. The density of states in one resolved Landau branch is $e|B|/h$ per unit area, so the actual filling factor isIt varies continuously with density and field. Within a disorder-broadened plateau, localized states can change occupation without changing the integer number of transporting edge branches; the filling need not equal the plateau integer at every point in that interval.

At a boundary, the confining potential bends the Landau energies through the Fermi energy, giving chiral edge states, interpreted semiclassically as skipping orbits. Opposite edges carry opposite propagation directions. An ideal spin-resolved transmitted edge channel contributes $e^2/h$; $\nu$ such channels give $I=\nu (e^2/h)(V_S-V_D)$. Chirality and suppressed backscattering between well-separated edges explain vanishing longitudinal voltage. Ideal reservoirs and appropriate probe equilibration are part of this edge-state transport model.

A gated antidot. A local repulsive gate potential depletes an island inside the Hall bar. Edge states circulate around its boundary as closed antidot orbits. When a localized orbit is weakly coupled to extended channels on opposite sides, resonance at the reservoir electrochemical potential permits backscattering and produces conductance dips on an otherwise quantized transmitting plateau. If the path instead adds a transmission route between otherwise disconnected channels, resonant peaks can occur: the sign depends on the device's tunnel connectivity and what conductance is measured. An isolated antidot too far from every conducting edge has negligible transport signature.

For the simplest opposite-edge backscattering picture with one active branch,where $f$ branches would otherwise transmit. A gate moves the resonance through the Fermi energy by changing both confinement and orbit area. Stronger depletion of the constrictions also changes $f$, producing broad conductance plateaus or pinch-off, with narrow resonances superposed where coupling is finite. Low temperature resolves individual resonances; thermal and tunnel broadening can merge them.

For a fixed-area single-electron orbit, a phase change of $2\pi$ corresponds toSweeping gate voltage at fixed field shifts enclosed area and level energy, giving oscillatory resonance tracks. This period is not automatically set by the lithographic gate area. Charging energy, self-consistent screening and spin branches modify spacings; in particular coupled spin branches in a charging model can generate two resonances per $h/e$ cycle without changing the electron flux quantum.^[ref]

No antidot dimensions, capacitances, lever arms or measured spectrum are supplied, so absolute periods and resonance voltages cannot be extracted. The sketch illustrates the mechanisms and regimes requested, rather than inventing a numerical device data set.

Improving the bare edge potential. A picture of noninteracting Landau levels simply intersecting a prescribed smooth confinement ignores the redistribution and screening of electron charge. A self-consistent electrostatic calculation combines gate and donor potentials, electron density and Coulomb interactions. Where a partially occupied Landau level has a large density response, electrons screen strongly and create a compressible strip with nearly pinned level energy. Regions with the chemical potential in a gap are incompressible and support much of the potential change. Consequently the screened edge alternates between compressible and incompressible strips, rather than preserving an arbitrary externally drawn slope. Finite temperature, disorder, exchange and edge reconstruction can require refinements beyond the simplest electrostatic model.^[ref]

Fractional states and composite fermions. Very clean two-dimensional systems show plateaus at selected fractional fillings, with small longitudinal resistance and a many-electron excitation gap. Electron-electron correlations are essential; partial filling of a noninteracting Landau level is not enough. The simplest composite fermion binds two statistical flux quanta to each electron. This is a representation of correlated electron motion, not a physical solenoid attached to a particle. With $B>0$, ${\Phi }_0=h/e$, and density $n_s$, the mean effective field isDefine a signed effective filling ${\nu }^{\ast }=n_s{\Phi }_0/B^{\ast }$. ThenFor ${\nu }^{\ast }=p>0$, filled composite-fermion levels produce $\nu =p/(2p+1)=1/3,2/5,3/7,\dots$. For reversed effective field write ${\nu }^{\ast }=-p$, giving $\nu =p/(2p-1)=1,2/3,3/5,\dots$; the nontrivial fractional upper sequence starts with $p=2$. If effective filling is defined as nonnegative using $|B^{\ast }|$, retain these as separate field-direction branches instead of using the signed expression blindly. At $\nu =1/2$ the mean $B^{\ast }$ vanishes and the effective filling diverges, so it is not an integer composite-fermion Hall plateau in this simplest construction. Attaching two flux quanta preserves fermionic statistics; the emergent integer-like gaps organize a prominent sequence of fractional electronic states.^[ref]

In the quantum Hall effect, a two-dimensional electron system at low temperature in a strong perpendicular magnetic field has transverse conductivity of quantized magnitude $|{\sigma }_{xy}|=\nu e^2/h$. On a plateau with negligible longitudinal conductivity, quantum Hall conductivity tensor inversion gives $|{\rho }_{xy}|=h/(\nu e^2)$ and ${\rho }_{xx}\to 0$; the Hall sign depends on the carrier and orientation convention. The filling factor is $\nu =n_{2D}h/(eB)$ when all spin-resolved states are counted.

For the integer quantum Hall effect, filled Landau levels and a mobility gap give integer $\nu$. Disorder-localized states allow the density or field to vary without changing the number of extended occupied channels, producing a quantum Hall plateau rather than quantization only at isolated fields. Quantum Hall edge states provide an equivalent transport picture. In a Hall bar, separate voltage leads measure transverse and longitudinal voltages while a known current flows; sweeping the field reveals both the plateau and the resistance minimum. The von Klitzing-Dorda-Pepper quantum Hall experiment established this integer quantization.

The fractional quantum Hall effect requires electron correlations within a partially filled Landau level. An incompressible correlated state can occur at fractions such as $\nu =1/3$; a noninteracting partially filled level does not account for the associated gap. The Laughlin wavefunction at $\nu =1/m$, odd $m$, contains a factor ${\prod }_{i<j}(z_i-z_j{)}^m$, suppressing close electron approaches while retaining fermionic antisymmetry. Its charged collective excitations can carry magnitude $e/m$; the constituent electrons still have charge $-e$. The Tsui-Störmer-Gossard fractional Hall experiment observed the fractional Hall feature together with a longitudinal-resistance minimum, providing the experimental distinction from an arbitrary rational filling of an ordinary conducting state.

Daniel Tsui, Horst Störmer and Arthur Gossard reported the effect in 1982. They grew gallium arsenide–aluminium gallium arsenide layers by molecular beam epitaxy, separating the two-dimensional electron gas from its semiconductor doping. They cut Hall bars and made indium contacts. Low-field measurements established number density and charge carrier mobility. A perpendicular magnetic field sweep measured transverse and longitudinal sheet resistivities at several temperatures. Cooling sharpened the plateau near $3h/e^2$ and the longitudinal minimum at filling factor $1/3$; integer plateaus provided an internal comparison. The longitudinal minimum remained finite at the lowest temperature: zero-temperature vanishing was unresolved. This established anomalous transport, without directly measuring excitation electric charge.^[ref]

The two readouts test different statements. A single intersection with $R_H=3R_K$ would also occur on the smooth classical relation $R_H=B/(n_{s}e)$ at $n_{s}h/(eB)=1/3$. A quantum Hall plateau instead persists over a magnetic field interval. Comparing transverse and longitudinal signals helps distinguish that plateau from a contact-placement artefact; the quantum Hall conductivity tensor inversion quantifies the contamination when longitudinal sheet resistivity is nonzero.

Later, 1997 shot noise measurements associated with quantum tunnelling at filling factor $1/3$ tested the excitation electric charge separately, finding $e/3$. That is a different observable from a Hall plateau.^[ref]

The von Klitzing constant is $R_K=h/e^2=25812.807459\dots \Omega$. The current SI fixes the Planck constant $h=6.62607015\times 10^{-34}\mathrm{J}\mathrm{s}$ and elementary charge $e=1.602176634\times 10^{-19}\mathrm{C}$ exactly, so $R_K$ is exact; the displayed decimal is truncated. It differs from the historical conventional value $R_{K\text{-}90}=25812.807\Omega$.^[ref]

As an original ideal example, $N=2$ and electric current $I=1\mu \mathrm{A}$ give $|V_H|=I{R}_K/2\simeq 12.9064\mathrm{mV}$. Changing the Hall bar's width changes the transverse electric field required for this electric potential difference, while the ideal ratio $|V_H|/I$ remains $R_K/2$.