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A semiconductor whose mobile charge carrier population requires Fermi-Dirac statistics rather than a dilute Maxwell-Boltzmann distribution. In a strongly degenerate n-type semiconductor, the Fermi level lies inside the conduction band; in a strongly degenerate p-type semiconductor, it lies inside the valence band. The occupied and empty quantum states on opposite sides of a tunnel diode can then overlap in energy. Heavy semiconductor doping both changes these occupations and narrows the depletion region; a narrow barrier and accessible final quantum states serve different roles.

Leo Esaki's 1958 report describes alloy-fabricated germanium p-n junctions, with acceptor impurity concentration $1.6\times 10^{19}{\mathrm{cm}}^{-3}$ and donor impurity concentration approximately $10^{19}{\mathrm{cm}}^{-3}$. Its readout was the current-voltage characteristic: a forward peak occurred at $0.035\pm 0.005\mathrm{V}$. The report says specimens could be reproduced; above $0.3\mathrm{V}$ the forward branch approximately followed the ordinary Shockley diode equation.^[ref]

In his 1973 lecture, Leo Esaki recalls an earlier junction whose strong room-temperature reverse conduction preceded a negative-slope forward segment revealed by cooling. Its estimated zero-bias width was about $200$ ångströms ($20\mathrm{nm}$), supported by capacitance measurements. Increasing semiconductor doping further made the negative slope visible across the measured temperatures, including room temperature. Thus preparation and temperature variation were experimental controls, not merely changes to a theoretical diagram. The low onset voltage argued against avalanche production of Electrons and electron holes; the energy band explanation connected the forward decline to loss of available final states.^[ref]

The historical readouts were junction electric current versus applied electric potential difference and a separate capacitance check; preparation and temperature were varied. The cited descriptions do not identify a meter model or give a complete wiring diagram.

For a modern repetition, measure junction voltage directly while stepping the supply and recording electric current, repeat both sweep directions, and compare temperatures and differently doped specimens. These are proposed controls, not a reconstruction of the historical apparatus. Lead electrical resistance, Joule heating, contact quality and voltage resolution can obscure the result. The tunnel-diode load-line stability calculation also predicts that an external resistor can make a negative-slope operating point inaccessible in a slow sweep. A jump in terminal readings then need not mean the underlying current-voltage characteristic is discontinuous.

A heterojunction joins different semiconductors; its two sides need not have opposite semiconductor doping.^[ref]

A homojunction joins regions of the same semiconductor material with different semiconductor doping. Its bulk band gap is the same on both sides. This distinguishes the electrostatic band bending of a simple equilibrium p-n junction from the material-dependent band offsets possible in a heterojunction.

An intrinsic semiconductor has equilibrium mobile Electron and electron hole densities set predominantly by thermal excitation across its band gap, rather than by semiconductor doping. In the nondegenerate regime, charge neutrality gives $n=p=n_i$.

Semiconductor doping introduces impurities with levels close to the band edges. A donor impurity can release an Electron to the conduction band, leaving a fixed positive ion; an n-type semiconductor has Electrons as majority carriers. An acceptor impurity can take an Electron from the valence band, leaving a mobile hole and fixed negative ion; a p-type semiconductor has holes as majority carriers. The opposite species remains as a minority carrier population, and a neutral bulk sample balances the ionised dopants with mobile carriers.

At a p-n junction, concentration gradients initially drive Electrons and holes across the join. Their removal near the join exposes negative acceptor ions on the p side and positive donor ions on the n side, forming a depletion region. Its electric field opposes further majority-carrier diffusion. Equilibrium has a flat Fermi level, no net current and spatially bent band edges. With p on the left and n on the right, the Electron band edges fall towards the n side; the difference is the equilibrium barrier in Electron energy. A flat Fermi level does not mean flat conduction and valence edges.

Semiconductor doping introduces controlled impurities to alter equilibrium carrier populations and electrical conductivity. In an intrinsic semiconductor, thermally excited Electrons in the conduction band and electron holes in the valence band have equal densities $n=p=n_i$. A shallow donor impurity, such as phosphorus in silicon, supplies an Electron from an impurity level just below the conduction-band edge. Once ionized it is positively charged, and the material is n type. An acceptor impurity, such as boron in silicon, accepts a valence Electron into a level just above the valence-band edge, leaving a mobile hole and a negatively charged ionized impurity; the material is p type.

With dopant densities $N_D,N_A$, charge neutrality requiresFor fully ionized, nondegenerate dopants at equilibrium, the semiconductor mass-action law gives $np=n_i^2$. In a substantially n-type sample, $N_D-N_A\gg n_i$, soThe corresponding p-type result is $p\simeq N_A-N_D$ and $n\simeq n_i^2/(N_A-N_D)$. The majority population grows while the minority population decreases; adding donors does not simply add equal numbers of free Electrons and holes.

The Fermi energy shifts toward the conduction band for n-type material and toward the valence band for p-type material. In the nondegenerate approximation,where $N_C,N_V$ are effective band-edge state densities. At very low temperature, dopants may not be ionized and carrier freeze-out occurs. At intermediate temperatures, ionized dopants dominate the carrier density; at sufficiently high temperature, intrinsic excitation can dominate. Heavy doping can produce degenerate carrier statistics, invalidating these Boltzmann expressions.

The electrical conductivity is $\boxed{\sigma =e(n{\mu }_e+p{\mu }_h)}$. Doping usually raises the majority carrier density, but ionized impurity scattering can lower mobility, so conductivity need not scale indefinitely with dopant concentration. Joining p-type and n-type regions creates a p-n junction, with a depletion region and built-in electric field established by carrier diffusion and compensating drift. The fixed ionized dopants, not an absence of all charge, account for the depleted region's net charge density.

The planar process fabricates semiconductor devices from a common surface while retaining a protective oxide over the exposed ends of their p-n junctions. Jean Hoerni's patent describes selective openings in silicon dioxide for semiconductor doping and contacts, with oxide left over the p-n junctions. Protection and access are designed together; the surface is not simply stripped after fabrication. This was a distinct enabling contribution to the monolithic integrated circuit.^[ref]

A semiconductor has an electronic band gap and a conductivity strongly affected by temperature, impurities and carrier injection. Optical absorption can create mobile electrons and holes, enabling a photodiode.

The useful feature of a semiconductor is that its charge carrier population can be controlled. Semiconductor doping changes the supply of mobile Electrons or electron holes; carrier injection changes their population away from thermal equilibrium. A transistor turns that control into an electronic amplifier: a small input signal controls a larger flow of supplied energy.

For a uniform semiconductor in a weak electric field, a simple drift model writes its electrical conductivity asHere $q>0$ is the elementary charge, $n,p$ are the number densities of mobile Electrons and electron holes, and ${\mu }_n,{\mu }_p$ their positive charge carrier mobilities. The two contributions add because opposite electric charges drift in opposite directions and therefore carry electric current in the same direction. This model assumes fixed temperature and mobilities and omits diffusion from density gradients.

An original dimensionless example isolates the effect of carrier injection. Suppose initially $p\ll n=n_0$ and ${\mu }_n=2{\mu }_p$. Adding equal excess populations $\Delta n=\Delta p=0.1n_0$ gives $\Delta \sigma /{\sigma }_0=0.15$, even though the added electron holes remain a minority carrier population. A semiconductor can respond strongly to a small injected population without changing its underlying band gap.

In thermal equilibrium, nondegenerate conduction Electrons and valence electron holes share one chemical potential. Multiplying $n=N_c{e}^{-(E_c-\mu )/(k_{B}T)}$ by $p=N_v{e}^{-(\mu -E_v)/(k_{B}T)}$ cancels that chemical potential:This relation remains valid with semiconductor doping under the stated assumptions. Equality of the two individual densities, $n=p=n_i$, additionally requires the intrinsic neutral case. Separate electron and hole quasi-Fermi levels in nonequilibrium need not obey this equilibrium product.

Daniel Tsui, Horst Störmer and Arthur Gossard reported the effect in 1982. They grew gallium arsenide–aluminium gallium arsenide layers by molecular beam epitaxy, separating the two-dimensional electron gas from its semiconductor doping. They cut Hall bars and made indium contacts. Low-field measurements established number density and charge carrier mobility. A perpendicular magnetic field sweep measured transverse and longitudinal sheet resistivities at several temperatures. Cooling sharpened the plateau near $3h/e^2$ and the longitudinal minimum at filling factor $1/3$; integer plateaus provided an internal comparison. The longitudinal minimum remained finite at the lowest temperature: zero-temperature vanishing was unresolved. This established anomalous transport, without directly measuring excitation electric charge.^[ref]

The two readouts test different statements. A single intersection with $R_H=3R_K$ would also occur on the smooth classical relation $R_H=B/(n_{s}e)$ at $n_{s}h/(eB)=1/3$. A quantum Hall plateau instead persists over a magnetic field interval. Comparing transverse and longitudinal signals helps distinguish that plateau from a contact-placement artefact; the quantum Hall conductivity tensor inversion quantifies the contamination when longitudinal sheet resistivity is nonzero.

Later, 1997 shot noise measurements associated with quantum tunnelling at filling factor $1/3$ tested the excitation electric charge separately, finding $e/3$. That is a different observable from a Hall plateau.^[ref]

A tunnel diode is a p-n junction with sufficiently heavy semiconductor doping on both sides to make a thin depletion region and permit substantial interband tunnelling. The neutral regions are degenerate semiconductors. Its distinctive forward current-voltage characteristic contains a peak followed by a valley: over part of the curve, increasing the applied electric potential difference decreases the electric current. The Esaki tunnel-diode experiment made this behavior experimentally concrete.

The useful quantity is the local slope, not the ratio of total voltage to total electric current. With conventional electric current $I$ entering the positive-voltage terminal, defineNegative differential resistance means $g_d<0$, hence $r_d<0$ where defined. A forward operating point can still have $V>0$, $I>0$ and absorbed power $VI>0$. A small voltage increase then gives a negative current increment; this does not make the total electric current negative or turn the device into an unlimited source of energy. The external supply sets the operating point and supplies the energy available for an electronic amplifier.

An original idealized construction explains the shape. Put the n-type semiconductor on the left and the p-type semiconductor on the right. Take $q>0$ as the elementary charge and $V=V_p-V_n$. Increasing forward bias lowers the right-hand Electron energy levels relative to the left. Denote the two reservoir electrochemical potentials by ${\mu }_n,{\mu }_p$, so that ${\mu }_n-{\mu }_p=qV$. At zero temperature, occupied left-hand conduction band states extend up to ${\mu }_n$; empty right-hand valence band states start at ${\mu }_p$. For transfer conserving Electron energy, the available interval isIt is nonempty only when its upper endpoint exceeds its lower endpoint. Both an occupied initial quantum state and an empty final quantum state must exist at the same energy. The Pauli exclusion principle prevents transfer into an already occupied final quantum state.

For the original diagram, choose arbitrary energy units with $E_{c,n}=-0.5$, ${\mu }_n=0$, ${\mu }_p=-u$ and $E_{v,p}=0.5-u$, where $u$ is $qV$ in those units. The available interval has widthThus $L(0.25)=0.25$, $L(0.50)=0.50$, $L(0.70)=0.30$, and $L(1.15)=0$. Initially forward bias opens a transfer window; further forward bias closes it by moving the right-hand valence band edge below the left-hand conduction band edge. This is a state-counting illustration, not a formula for a measured electric current.

For reverse bias, the transfer direction changes: occupied right-hand valence band states can feed empty left-hand conduction band states. In the same construction, $u=-0.70$ opens the interval $0<E<0.70$ for this reverse transfer. A narrow depletion region allows a large reverse quantum tunnelling electric current at small electric potential difference, whereas the ordinary Shockley diode equation predicts only a small reverse saturation electric current before diode reverse breakdown. At zero biasing, equal reservoir occupations give zero net electric current; quantum tunnelling does not require a net equilibrium flow.

A finite-temperature refinement replaces sharp occupation cutoffs with the Fermi-Dirac distribution. An illustrative weak-transfer expression isHere $\mathcal{W}\ge 0$ describes allowed initial/final quantum states and their coupling, and $f_n,f_p$ are Fermi-Dirac distributions with the respective electrochemical potentials. The occupation difference follows by subtracting the reverse transfer factor from the forward one: $f_n(1-f_p)-f_p(1-f_n)=f_n-f_p$. An overlap interval alone does not determine $\mathcal{W}$: transmission probability, density of states, crystal momentum selection and phonons can matter. A complete germanium calculation is more demanding than multiplying two constant density of states factors. At larger forward bias, ordinary carrier injection and diffusion supply a rising current branch even after direct band overlap is lost.