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Model a spatially uniform cell membrane as a capacitor of membrane capacitance $C_m$ in parallel with membrane electrical resistance $R_m$ and a fixed leak reversal potential $E_L$. Exclude active ion channels, seal leak current and pipette capacitance. For electric current $I$ injected into the biological cell, electric charge conservation yieldsStarting at $V(0)=E_L$ and applying constant $I$ gives the ordinary differential equation solutionThe steady state rise is $I{R}_m$; the time constant is $R_m{C}_m$. With $I=50\mathrm{pA}$, $R_m=200\mathrm{M\Omega }$, $C_m=50\mathrm{pF}$ and $E_L=-70\mathrm{mV}$, the rise is $10\mathrm{mV}$ and ${\tau }_m=10\mathrm{ms}$. At one time constant the rise is $10(1-e^{-1})\mathrm{mV}\approx 6.321\mathrm{mV}$. The figure's uncompensated pipette voltage adds $I{R}_s=1\mathrm{mV}$ for $R_s=20\mathrm{M\Omega }$. The membrane voltage is continuous at step onset in this model, while the pipette voltage immediately acquires that access drop.

Checking the units is instructive: electrical resistance times capacitance has units $\Omega \mathrm{F}=\mathrm{s}$, and electric current times electrical resistance has units of voltage. Unlike the passive voltage clamp transient under patch-clamp series resistance, this ideal current clamp membrane time constant is set by $R_m{C}_m$, not $R_s{C}_m$. Strong current steps can recruit voltage-gated ion channels; the passive model then fails and cannot generate an action potential. Small pulses of both signs, stable access and repeated baseline measurements help test whether the passive approximation is appropriate.

A quantum dot confines electronic motion in all three directions. A semiconductor dot can be thin enough that only one transverse subband is occupied, with discrete lateral states controlled by gates. In a rectangular hard-wall model,A smooth circular lateral confinement is often better approximated by $m^{\ast }{\omega }_0^2{r}^2/2$, giving ${ϵ}_{n_x{n}_y}=\hslash {\omega }_0(n_x+n_y+1)$ above the transverse ground energy. Shell $q=n_x+n_y$ contains $q+1$ orbitals, twice that many electrons before interactions split the spin degeneracy. Hence closed-shell electron numbers are $2,6,12,20,\dots$. These are single-particle quantum numbers; an interacting dot's states are many-electron eigenstates, not simply one orbital occupied by a whole charged island.

A perpendicular magnetic field changes the harmonic spectrum to the Fock-Darwin spectrum. For an electron of charge $-e$, take ${\omega }_c=eB/m^{\ast }>0$ and $L_z=\ell \hslash$ in the usual symmetric gauge. ThenReversing the definition of the angular label changes the displayed sign of its orbital term, not the set of energies. The Zeeman term lifts spin degeneracy, while exchange can favor parallel-spin filling in partially filled shells. These effects are distinguished by how peaks evolve with field rather than by identifying every irregular peak spacing with one-particle confinement.

For electrostatics, let $C_{\Sigma }=C_s+C_d+C_g$ and $Q_g=C_s{V}_s+C_d{V}_d+C_g{V}_g+Q_0$, where $Q_0$ represents a fixed offset charge in the chosen convention. The constant interaction model givesThe charging energy is conventionally $E_C=e^2/(2C_{\Sigma })$, whereas adjacent charge-state potentials differ byThis addition energy separates a capacitive contribution from orbital spacing. Exchange, nonuniform screening and correlations are corrections to the constant interaction model; a change in dot shape or effective capacitance can also alter spacings.

Connect the island weakly to source and drain reservoirs through tunnel barriers. sequential tunnelling is suppressed in a charge-stable region when neither adding nor removing an electron is energetically accessible. Sweeping the gate brings a charge electrochemical potential through the reservoir Fermi level, giving a Coulomb-blockade conductance peak. The gate lever arm is ${\alpha }_g=C_g/C_{\Sigma }$, so $\Delta V_g=E_{\mathrm{add}}/(e{\alpha }_g)$ locally if the capacitances and level spectrum do not vary appreciably. At finite source-drain bias, alignment with either reservoir defines the boundaries of a Coulomb diamond. Its slopes constrain capacitance ratios, and lines parallel to its edges can reveal excited-state transport. The conversion from a diamond's bias height to an energy depends on bias convention; a full-height/half-height factor must not be assumed without declaring the circuit.

A clear charging spectrum requires $k_{B}T$ and tunnel broadening $\hslash \Gamma$ smaller than the relevant addition energy; resolving individual orbital levels additionally requires them smaller than the orbital spacing. Tunnel resistances large compared with $h/e^2$ suppress strong charge fluctuations in the usual weak-junction regime. Blockade is not an assertion of mathematically zero current: higher-order cotunnelling can remain, and strong coupling or low-temperature spin correlations can invalidate the sequential model. An experimental check therefore combines gate sweeps with bias spectroscopy, temperature dependence and barrier tuning to separate level structure from broadening or uncontrolled charge traps.

In a primary vertical-dot experiment, gate-controlled current oscillations were converted into addition energies using finite-bias diamond spectroscopy; varying magnetic field then followed shell and spin filling. Reproducing enhanced addition energies at electron numbers 2 and 6 in several devices strengthened the shell assignment. The electron temperature was independently estimated above the refrigerator base temperature, an essential distinction when judging spectral resolution. Field-dependent reordering also revealed exchange effects beyond a purely spin-degenerate orbital model.^[ref]

The lipid cell membrane separates ionic solutions and has selective ion channels, ion pumps, and a finite capacitance. Ionic gradients and unequal permeability allow a small charge separation to generate a membrane potential. The bulk compartments can remain almost electrically neutral even when the narrow interfacial layers carry opposite electric charges.

For one permeant ionic species with valence $z$, its electrochemical potential is $\tilde{\mu }={\mu }^0+k_{B}T\log a+ze\varphi$, where $a$ is its activity. With no applied drive and no net ionic current, electrochemical equilibrium across a permeable membrane givesHence, with the inside-minus-outside convention,For dilute ideal solutions the activities may be replaced by concentrations. At $25^{\circ }\mathrm{C}$ this is $(59.16\mathrm{mV}/z){\log }_{10}(c_{\mathrm{out}}/c_{\mathrm{in}})$. The resulting Nernst equilibrium potential balances diffusive and electrical driving, not necessarily equal concentrations. Physically there must be countercharge, such as impermeant counterions; the single-species idealization concerns the permeant current. With multiple permeant species, zero total current need not mean zero current of each species, and the resting membrane potential is not generally any single species' Nernst equilibrium potential.

Including both flat ends of the cylindrical cell, its membrane surface area isThe capacitance is $C=(0.01\mathrm{F}{\mathrm{m}}^{-2})A=6.34602\mathrm{pF}$. The electric charge needed for the specified depolarization is thereforeIgnoring the ends gives $3.33\times 10^6$, only about one percent smaller. Inward movement of positive ions, or outward movement of negative ions, produces the stated positive change in the inside-minus-outside membrane potential.

The cell volume is $\pi r^2\ell =3.14159\times 10^{-16}{\mathrm{m}}^3$. Distributed over this volume, the transferred number would correspond to only $0.0177955\mathrm{mM}$. Relative to an illustrative, not source-specified, $100\mathrm{mM}$ internal ionic pool, that is a fraction $1.78\times 10^{-4}$. Thus a substantial change in membrane potential requires movement of only a tiny fraction of bulk ions; it does not require wholesale depletion of the intracellular solution. The separated electric charge is concentrated near the two membrane surfaces.

Take the longitudinal scalar piezoelectric coefficient appropriate to the load and electrode direction. For a uniformly stressed slab of face area $A$ and thickness $t$, the source charge is $\Delta Q=d\Delta F=dA\Delta \sigma$. Its capacitance is $C={ϵ}_0\kappa A/t$, so the ideal initially uncharged, electrically isolated sensor givesThe sign depends on the poling direction and electrode convention. Equivalently, the incremental constitutive law is $\Delta D=d\Delta \sigma +{ϵ}_0\kappa \Delta E$; an ideal open circuit keeps free electrode charge, hence $D$, fixed and gives $\Delta E=-d\Delta \sigma /({ϵ}_0\kappa )$. area cancels because both generated charge and capacitance scale with area. Thickness does not cancel: the material comparison is through $d/\kappa$ only when geometry is fixed. Here $\kappa$ must be the relative permittivity under the relevant mechanical and frequency conditions.

For identical thicknesses, compare $d/\kappa$ using the supplied coefficients:for barium titanate, lead zirconate titanate and quartz respectively. Thus barium titanate, then lead zirconate titanate, then quartz is the increasing voltage sensitivity of a piezoelectric sensor order. A large charge coefficient alone does not guarantee a large voltage: the large permittivity of a ferroelectric also increases its capacitance.

For quartz, $A=10^{-4}{\mathrm{m}}^2$ and $t=5.0\times 10^{-4}\mathrm{m}$. With $g=9.81\mathrm{m}{\mathrm{s}}^{-2}$, the load and stress are $F=4.905\mathrm{N}$ and $\Delta \sigma =4.905\times 10^4\mathrm{Pa}$. ThereforeAs a check, $Q=dF=11.28\mathrm{pC}$ and $C=6.73\mathrm{pF}$ give the same result. This is the ideal maximum open-circuit change on applying the load. Input capacitance reduces it to $Q/(C+C_{\mathrm{in}})$, while finite leakage makes it decay: it is not a guaranteed permanent DC output.

The sensor must survive the stress range and repeated loading without fracture, fatigue or excessive mechanical compliance. The tensor character of the piezoelectric coefficient makes crystal orientation important; a ceramic's poling quality and domain stability also matter. Compare linearity, hysteresis, reproducibility, aging and the usable frequency bandwidth, including resonance and dynamic response.

Electrical design is equally important: leakage resistance and readout input impedance determine low-frequency loss, and cable/input capacitance loads a voltage output. A charge amplifier may favour a different material ranking from a passive open-circuit voltage measurement. temperature changes can alter the coefficients, produce a pyroelectric signal in a polar material and depole a ferroelectric near its transition. Humidity, electrode bonding, electrical breakdown, manufacturability, cost and environmental constraints such as lead content also affect a practical choice. Calibration should separate applied stress from temperature drift and readout loading.

In the Hodgkin-Huxley model, $V$ is the intracellular-minus-extracellular membrane potential, $C_m$ is the membrane capacitance per unit area, and $I_{\mathrm{app}}$ is the applied inward electric current per unit area. A space clamp makes $V$ spatially uniform, leaving temporal ordinary differential equations. With outward ionic electric current positive, the capacitance balance is $C_m\dot{V}=I_{\mathrm{app}}-I_i$.

The variables $m,n,h$ lie between zero and one. They describe sodium activation, potassium activation and availability against sodium inactivation, respectively. Thus larger $h$ means less inactivation. Their voltage-dependent limiting values are $m_{\infty },n_{\infty },h_{\infty }$, and ${\tau }_m,{\tau }_n,{\tau }_h$ are their positive relaxation time constants.

Each ionic term has the Ohm's law form conductance times driving potential. The sodium term has instantaneous electrical conductance $g_{\mathrm{Na}}{m}^{3}h$, the potassium term has instantaneous electrical conductance $g_{\mathrm{K}}{n}^4$, and the leak term has constant electrical conductance $g_{\mathrm{L}}$. Here the $g$ constants are maximal electrical conductances per area, and $V_{\mathrm{Na}},V_{\mathrm{K}},V_{\mathrm{L}}$ are the corresponding reversal potentials. The factors $m^{3}h$ and $n^4$ arise from independent permissive gates in an ion channel. A conducting channel carries zero net ionic electric current at its reversal potential.

The leaky integrate-and-fire model treats the membrane as a capacitance $C_m$. The leak conductance $g_L$ drives voltage towards its resting reversal $V_L$; the excitatory conductance $g_E$ drives it towards its reversal $V_E$; and $I_e$ is injected current, positive inward. A sufficiently high $V_E$ makes increasing $g_E$ depolarizing over the relevant voltage range, while also increasing total conductance and shortening the integration time.

For constant input and conductances, putThenIf this trajectory reaches $V_{\theta }$, register a spike and reset the voltage to $V_0<V_{\theta }$, optionally enforcing a specified neuronal refractory period. The reset makes repeated threshold crossings possible under a constant suprathreshold drive. If $V_{\infty }\le V_{\theta }$ and the initial voltage is below threshold, no finite-time crossing occurs; equality gives asymptotic approach. For time-varying currents or conductances, integrate the subthreshold differential equation until the next crossing.

Use this model when spike timing, spike counts and network integration matter more than the detailed waveform: it is inexpensive for large recurrent networks or comparisons of current-driven and conductance-driven input. It omits ionic spike initiation, channel-specific adaptation and many dendritic effects, for which a Hodgkin-Huxley model or a spatial model may be needed.

In electrostatics, Gauss's law is ${\oint }_{\partial \Omega }\mathbf{E}\cdot \mathbf{n}dS=Q_{\mathrm{enclosed}}/{ϵ}_0$, or locally $\nabla \cdot \mathbf{E}={\rho }_e/{ϵ}_0$, where ${\rho }_e$ is charge density and ${ϵ}_0$ is vacuum permittivity. Spherical symmetry makes the electric field radial, and Gauss's law givesChoose the additive constant of the electrostatic potential by $\varphi (\infty )=0$. Using $\mathbf{E}=-\nabla \varphi$ and continuity of potential across each charged shell givesThe field jumps at the shell surfaces, so the displayed formulas are for the requested open regions. The potential difference of the spherical capacitor is $\Delta \varphi =Q(1/a-1/b)/(4\pi {ϵ}_0)$. Thus its capacitance and electrostatic energy areThe energy follows either by charging work ${\int }_0^{Q}q/Cdq$, or directly from $W=({ϵ}_0/2)\int |\mathbf{E}{|}^2{d}^{3}x=Q^2(1/a-1/b)/(8\pi {ϵ}_0)$.

An H2RG detector is a hybrid infrared detector: a photosensitive array is bonded, pixel by pixel through indium contacts, to a separate silicon readout circuit. In infrared use the absorber is normally mercury cadmium telluride, whose composition sets the absorption cutoff. The H2RG readout architecture can also be used with other absorbing materials, so the readout name does not fix the detector’s wavelength response. The manufacturer’s H2RG specification gives a $2048\times 2048$ grid and $18\mu \mathrm{m}$ pixel pitch, together with reference-pixel and guide-window capabilities.

Each illuminated pixel contains a photodiode connected to its own readout node. Absorbed photons generate carriers; their accumulated charge changes the node voltage, with $|\Delta V|=|\Delta Q|/C$ for node capacitance $C$. A reset establishes the baseline; row and column addressing and multiplexed output amplifiers sample the pixel voltage. This is not the serial transfer of charge packets through adjacent pixels used by a charge-coupled device.

Nondestructive detector readout allows repeated measurements during an integration. Correlated double sampling removes the reset baseline, Fowler sampling differences groups of reads at the beginning and end, and up-the-ramp sampling estimates the signal from its slope and can flag cosmic-ray steps or saturation. The “R” denotes detector reference pixels, which monitor electronic offsets; “G” denotes a programmable guide window that can be read rapidly between full-array operations. Reference pixels do not measure sky background. Cooling suppresses dark current and thermal background. Read noise, nonlinearity, persistence and interpixel coupling still require calibration.

The flat interface is an equilibrium reservoir with $\mu =0$, while the droplet has the constant surface value ${\mu }_s=\gamma /({\varphi }_{B}R)$. The exterior chemical potential satisfies the Laplace equation, tends to zero far away, and obeys these two surface values. These are exactly the electrostatic boundary conditions at a conductor for a sphere held at potential ${\mu }_s$ above a grounded infinite plane.

Introduce an arbitrary permittivity $ϵ$. In the electrostatic problem, $Q=-ϵ{\int }_{S_R}{\partial }_n\mu dS=C(R,h){\mu }_s$. Therefore the diffusion-capacitance analogy gives the outward currentFor an isolated sphere, its capacitance is $C(R,\infty )=4\pi ϵR$, so $I(R,\infty )=4\pi MR{\mu }_s=4\pi M\gamma /{\varphi }_B$. Dividing givesThus sphere-plane capacitance determines the evaporation enhancement. The assumed spherical shape gives the corresponding law $\dot{R}=-M\gamma c(R/h)/(2{\varphi }_B^2{R}^2)$ for droplet evaporation near a planar reservoir. The local surface current is generally nonuniform, even though its total is described by a single capacitance.

A capacitor consists of two conductors carrying equal and opposite charges. Its capacitance iswhere $Q$ is the magnitude of the charge on either conductor and $V$ is their potential difference.

For $a<r<b$, a coaxial Gaussian cylinder of length $\ell$ encloses charge $\lambda \ell$. Gauss's law givesTaking $V$ to mean the inner potential minus the outer potential,Since $Q=\lambda L$,

The field energy isThese are the standard coaxial cylindrical capacitor formulas.

A larger source–drain bias opens an energy window between reservoir electrochemical potentials. When a charge-addition/removal transition enters that window, sequential tunnelling becomes allowed even away from a zero-bias degeneracy. The low-conductance regions in a gate/bias map are Coulomb diamonds.

For an illustrative symmetric device with reservoir potentials $\pm e{V}_{\mathrm{SD}}/2$, let $q=Q_{\mathrm{ext}}/e$ and $E_{\mathrm{ch}}=e^2/C$. In the charge-$N$ interval, the classical blockade domain isIt shrinks to zero at $q=N\pm 1/2$. Unequal capacitances change edge slopes and voltage division; the figure's symmetry is a chosen model, not a universal device property.

Quantum confinement adds discrete single-particle levels and spin structure. In a constant-interaction approximation, successive addition energies contain $e^2/C$ plus the relevant orbital spacing, so diamond sizes need not all match. Excited-state tunnelling can produce extra conductance lines. At stronger coupling, cotunnelling and charge fluctuations can give leakage beyond a simple sequential classical model. Thus temperature and coupling must be small enough to resolve the charging and level structure separately.

Let $C$ be the island's total electrostatic capacitance and $Q_{\mathrm{ext}}$ the charge offset induced by gates, reservoir potentials and fixed background charges. In the constant-capacitance model,Taking the difference givesChanging gate voltage changes $Q_{\mathrm{ext}}$ approximately linearly, for example through $C_g{V}_g$.

For fixed $N$, $U_N(Q_{\mathrm{ext}})$ is a parabola. At small temperature/bias, the preferred integer is the one nearest $Q_{\mathrm{ext}}/e$; the equilibrium energy follows the lower envelope of these parabolas. Adjacent charge states become degenerate at $Q_{\mathrm{ext}}=(N+\frac{1}{2})e$, allowing small-bias sequential current when the two barriers are transmissive.

The excess-electron charge $-Ne$ is a staircase. If “net charge” includes the induced compensating charge, define $q_{\mathrm{net}}=Q_{\mathrm{ext}}-Ne$; that residual charge is a sawtooth between $-e/2$ and $e/2$ in equilibrium. The opposite sign convention reverses the sawtooth. State the charge convention: an integer electron-charge staircase and a residual electrostatic-charge sawtooth describe different quantities.

An initially localized escaping electron occupies a superposition of lead momentum states. In a uniform free one-dimensional lead,A packet centered at $k_0$ moves with group velocity $\hslash k_0/m^{\ast }$ and generally spreads because its components have different velocities. For an initially unchirped minimum-uncertainty Gaussian wave packet,This illustrates dispersive evolution; the actual emission contact determines $a(k)$ and whether only outward-propagating components are appreciable. It does not instantaneously become a single lead plane wave.

A single-electron transistor used as a sensitive electrometer exploits Coulomb blockade: a nearby charge shifts the offset $Q_{\mathrm{ext}}$ and therefore the conductance peaks. This requires stable calibrated capacitances and low charge noise, rather than merely a small conductor.

Conventional semiconductor scanning capacitance microscopy is not a reliable dopant-contrast image of this specimen as drawn. Its usual $dC/dV$ signal relies on a tip–insulator–semiconductor capacitance whose depletion region changes under AC bias. An isolated conducting graphene sheet on thick insulating glass provides neither that conventional depletion geometry nor a controlled charge reservoir; simply earthing glass does not supply one. Capacitive or electrostatic contrast may be detectable with a suitably designed back electrode, a contacted flake and an appropriate capacitance-sensitive instrument, but that is an additional electrical device specification. Force-based surface topography remains possible independently of the specialized capacitance channel.

An ordinary capacitor stores energy by separating charge across a dielectric: $E=C{V}^2/2$ and $Q=CV$. Electronic charge redistribution is rapid, giving high specific power, but the dielectric breakdown field and modest capacitance limit specific energy. Series resistance limits pulse power and produces heating; a large nominal capacitance does not remove those losses.

A supercapacitor has a much larger interfacial area and nanometre-scale charge separation. An electric double-layer capacitor stores charge without a bulk redox transformation; pseudocapacitance adds sufficiently fast surface or near-surface redox storage. ion motion in pores, electrolyte stability and series resistance constrain its response. Its specific energy usually exceeds an ordinary capacitor's while high specific power and cycling durability remain possible.

An electric battery stores chemical free energy through coupled electrode oxidation-reduction reactions. It can store substantial energy per mass, but charge transfer, ionic transport, diffusion and heat removal constrain rapid discharge. The terminal voltage and accessible capacity depend on discharge rate and state of charge. Accordingly the plotted order follows the storage and transport mechanisms; it is not a claim that every battery has less power than every supercapacitor.

For electrode area $A$, the change in spontaneous polarization density supplies a charge scale $\Delta Q=pA\Delta T$, while the film's capacitance is $C=\epsilon A/d$. The voltage magnitude is therefore $|\Delta V|=|p|d|\Delta T|/\epsilon$. More explicitly, for an initially compensated film with no change in free electrode charge, $\Delta D=\epsilon \Delta E+p\Delta T=0$. Taking $z$ from the lower electrode to the upper one gives $\Delta V_{\mathrm{upper}-\mathrm{lower}}=-d\Delta E=pd\Delta T/\epsilon$.The measurable magnitude is $0.339\mathrm{V}$, with polarity reversed by reversing the poling direction or the temperature change. This is an ideal open-circuit estimate: leakage, the measuring instrument's input capacitance and finite charge-relaxation time can reduce or reshape the observed voltage.