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Semiconductor doping introduces controlled impurities to alter equilibrium carrier populations and electrical conductivity. In an intrinsic semiconductor, thermally excited Electrons in the conduction band and electron holes in the valence band have equal densities $n=p=n_i$. A shallow donor impurity, such as phosphorus in silicon, supplies an Electron from an impurity level just below the conduction-band edge. Once ionized it is positively charged, and the material is n type. An acceptor impurity, such as boron in silicon, accepts a valence Electron into a level just above the valence-band edge, leaving a mobile hole and a negatively charged ionized impurity; the material is p type.

With dopant densities $N_D,N_A$, charge neutrality requiresFor fully ionized, nondegenerate dopants at equilibrium, the semiconductor mass-action law gives $np=n_i^2$. In a substantially n-type sample, $N_D-N_A\gg n_i$, soThe corresponding p-type result is $p\simeq N_A-N_D$ and $n\simeq n_i^2/(N_A-N_D)$. The majority population grows while the minority population decreases; adding donors does not simply add equal numbers of free Electrons and holes.

The Fermi energy shifts toward the conduction band for n-type material and toward the valence band for p-type material. In the nondegenerate approximation,where $N_C,N_V$ are effective band-edge state densities. At very low temperature, dopants may not be ionized and carrier freeze-out occurs. At intermediate temperatures, ionized dopants dominate the carrier density; at sufficiently high temperature, intrinsic excitation can dominate. Heavy doping can produce degenerate carrier statistics, invalidating these Boltzmann expressions.

The electrical conductivity is $\boxed{\sigma =e(n{\mu }_e+p{\mu }_h)}$. Doping usually raises the majority carrier density, but ionized impurity scattering can lower mobility, so conductivity need not scale indefinitely with dopant concentration. Joining p-type and n-type regions creates a p-n junction, with a depletion region and built-in electric field established by carrier diffusion and compensating drift. The fixed ionized dopants, not an absence of all charge, account for the depleted region's net charge density.

Take a p-n junction made from one semiconductor, with the p-type semiconductor on the left and the n-type semiconductor on the right. At thermal equilibrium the chemical potential $\mu =E_F$ is horizontal throughout. Before contact the chemical potential lies nearer the valence band on the p side and nearer the conduction band on the n side; after contact the band edges bend to permit one common value.

In this orientation both the conduction band edge $E_C$ and the valence band edge $E_V$ decrease from p to n by $e{V}_{\mathrm{bi}}$. For a homojunction their separation $E_g=E_C-E_V$ is constant. The acceptor impurity level $E_A$ lies just above $E_V$ where acceptors are present, and the donor impurity level $E_D$ lies just below $E_C$ where donors are present. These impurity levels follow the local band bending; they do not form one additional horizontal band across the device.

The shaded depletion region has few mobile Electrons or electron holes and contains fixed negative ionized acceptor impurities on the p side and positive ionized donor impurities on the n side. Thus its electric field points from n to p. Its neutral outer regions have negligible electric field, so the band edges become flat there. In the depletion approximation, charge neutrality requires $N_A{x}_p=N_D{x}_n$; the symmetric drawing illustrates $N_A=N_D$ rather than assuming that equality is universal. Diffusion and field-driven drift current cancel at equilibrium: no applied voltage does not mean zero internal electric field or zero built-in electric potential difference.

A solar cell uses the photovoltaic effect to turn photon energy into electrical work. In a semiconductor, above-gap photon absorption generates an Electron in the conduction band and an electron hole in the valence band. A p-n junction, together with selective electrical contacts, collects the two carrier species at opposite terminals. Carrier diffusion and the built-in electric field help separate them before electron-hole recombination. Illumination maintains different quasi-Fermi levels for Electrons and electron holes; their splitting, divided by $e$, sets the available terminal voltage in an ideal device. The equilibrium built-in potential alone cannot continuously deliver work.

For an ideal junction, the illuminated output current density isHere $J_{\mathrm{sc}}$ is the photogenerated short-circuit current density and $J_0$ the diode saturation current. The useful operating point maximizes $VJ$, rather than either current or voltage separately. With solar-cell fill factor $\mathrm{FF}=P_{\max }/(V_{\mathrm{oc}}{I}_{\mathrm{sc}})$,Series resistance, shunts, incomplete photon absorption and nonradiative recombination reduce the attainable efficiency.

The Shockley-Queisser limit removes these avoidable losses but retains the following physical constraints. There is one semiconductor junction with one band gap; each absorbed above-gap photon yields at most one collected electron-hole pair; carriers thermalize to the cell temperature; and the inverse optical process produces unavoidable radiative recombination. If ${\Phi }_{\odot }(E)$ is the incident photon flux per unit energy, ideal photon absorption givesThe same ability to absorb light requires the junction to emit it. At a forward voltage $V$, the emitted photon population has a chemical potential $eV$; in the ordinary nondegenerate limit the resulting recombination current is the exponential diode term above. Maximizing $VJ$ with this radiative $J_0$, and then choosing $E_g$, gives the limiting efficiency.

A small band gap collects many photons but gives a low voltage and large thermalization losses. A large band gap permits a larger voltage but transmits too much of the incident spectrum. Below-gap photons are lost to transmission, excess photon energy above the gap becomes heat, and radiative emission and its associated entropy loss keep $e{V}_{\mathrm{oc}}$ below $E_g$. The optimum single-junction conversion is roughly thirty percent under ordinary unconcentrated sunlight; the precise ceiling depends on spectrum, cell temperature and optical geometry. The original detailed-balance calculation gave about $30\%$ at $E_g\simeq 1.1\mathrm{eV}$ under its specified assumptions.^[ref] Multiple junctions and optical concentration change the assumptions and consequently change the bound.

A junction field-effect transistor has a conducting channel between source and drain, with gate regions forming reverse-biased p-n junctions to that channel. In an n-channel device, a more negative gate-source electric potential difference increases the reverse bias and widens the depletion region. The conducting cross-section shrinks, reducing the drain electric current. The gate ideally draws only a small leakage electric current, giving a high input resistance; the source-drain supply provides the controlled output power. Carrier motion in a p-channel device reverses the relevant polarities.

At small positive $V_{DS}$, the channel conducts approximately as a resistor. As the potential rises from source to drain, the local gate-channel reverse bias increases toward the drain. The depletion layers are therefore thicker there. For a symmetric n channel of half-thickness $a$, uniformly doped at density $N_D$, the one-sided depletion approximation giveswhere $w$ is the depletion width from each side and $V_{\mathrm{bi}}$ the built-in junction potential. The neutral channel closes locally when $w=a$. Define the positive geometrical depletion electric potential difference $U_P=e{N}_D{a}^2/(2{\epsilon }_s)$. The approximate drain-end pinch-off condition isMore negative gate bias makes this saturation occur at a smaller drain electric potential difference.

Pinch-off in a junction field-effect transistor does not mean that the drain electric current vanishes. Electrons arriving through the remaining neutral channel are swept across the high-field depleted region into the drain. Further increases in $V_{DS}$ mostly fall across that region, so the electric current changes only weakly: this is the saturation regime used for amplification. Channel shortening gives a finite output slope in real devices. Excessive reverse electric potential difference eventually causes breakdown, beyond the normal saturation model.

A sufficiently negative gate electric potential difference can instead deplete the entire channel from the source end and produce cutoff. In the simplified geometry its threshold is $V_{GS,\mathrm{off}}\simeq V_{\mathrm{bi}}-U_P<0$. A commonly used approximate transfer law in saturation isHere $I_{DSS}$ is the saturated drain electric current at zero gate-source bias. The square law is a useful device approximation, not an exact result for arbitrary channel profiles. It connects field control of depletion to a measurable transfer characteristic while keeping drain-end pinch-off distinct from complete gate cutoff.

Equilibrium junction. Put the p-type side on the left and n-type side on the right. When they are joined, Electrons diffuse from n to p and electron holes diffuse from p to n. This leaves negative ionized acceptors on the p-side and positive ionized donors on the n-side of the depletion region. The resulting built-in electric field points from n to p, opposing further diffusion. At equilibrium there is one constant Fermi level, and drift and diffusion currents cancel for each carrier species.

In the nondegenerate, fully ionized limit, the neutral-region carrier densities areThe conduction band and valence band lie higher on the p-side and bend down towards the n-side. The gap between them stays fixed for a homojunction. If $\psi$ increases towards the n-side, both edges shift by $-e\psi$, whileThus $n$ rises and $p$ falls continuously across the junction; neither mobile population is an exact step function. Their depletion exposes fixed dopant charge density, rather than an absence of every kind of charge. The built-in voltage is

Light emission. Forward bias lowers the barrier and injects minority carriers across the p-n junction. In a light-emitting diode, electron-hole recombination converts some of their energy into photons. A direct band gap permits efficient radiative transitions with nearly conserved crystal momentum; nonradiative channels compete. Near-edge emission has $\hslash \omega \simeq E_g$ and $\lambda \simeq hc/E_g$. Material composition and confinement select the emission colour. Reverse-bias saturation is not the ordinary LED operating mode.

Reverse current. Take $V=V_R>0$ and $I_R>0$ to mean reverse voltage and reverse current magnitudes. The Shockley diode equation in this convention isThe bias-independent $I_S$ term is the supply of thermally excited minority carriers from the neutral regions, swept across the junction by its electric field. The opposing injection current is reduced by the extra barrier energy $e{V}_R$ and is $I_S{e}^{-e{V}_R/(k_{B}T)}$. Their equality gives zero net current at zero bias; for $e{V}_R\gg k_{B}T$, the reverse current approaches $I_S$ until leakage or breakdown invalidates this ideal law. The collecting field need not create the minority carriers; their thermal supply limits the diffusion-dominated current.

For an ideal long junction of area $\mathcal{A}$, steady diffusion with recombination gives the diode minority-carrier diffusion currentIt depends on doping, geometry, carrier diffusion coefficients and lifetimes, and especially the intrinsic carrier concentration. Depletion-region generation current and surface leakage can add nonideal contributions to the measured reverse current.

Band-gap estimate from the data. Read a nearly flat region well above the small-bias knee and below the high-bias upturn, rather than estimating $I_S$ in the breakdown region. For a diffusion-dominated junction with nearly temperature-independent gap and effective masses,so $I_S=C(T)T^3{e}^{-E_g/(k_{B}T)}$, where $C(T)$ includes transport and doping factors. Extracting a semiconductor band gap from diode saturation current amounts to measuring the slope of $\ln [I_S/(C(T)T^3)]$ against $1/T$: it is $-E_g/k_B$. If the prefactor is taken approximately constant over a short interval,Approximate readings from the original PDF plateaus areUsing the two warmer curves and $k_B=8.6173\times 10^{-5}eV/K$ givesKeeping the $T^3$ factor but taking the residual transport factor constant changes this estimate to approximately $0.57\mathrm{eV}$. The justified graphical estimate is thereforeThe colder curve is a genuine limitation of the supplied data: the $0$ to $-45{}^{\circ }\mathrm{C}$ pair gives only about $0.32\mathrm{eV}$ with a constant prefactor, and the endpoint pair gives about $0.42\mathrm{eV}$. Thus all three cannot support one precise diffusion-only activation slope. A depletion-region generation current, approximately proportional to $n_i$ rather than $n_i^2$, can have a roughly half-gap activation energy; other leakage and temperature-dependent transport can also alter the slope. The PDF alone does not identify their relative contributions. A reliable precision gap measurement would use more temperatures and verify the transport regime instead of forcing one fit through these three readings.

Ordinary doped semiconductor devices need a regime where their donor impurities or acceptor impurities supply mobile charge carriers while intrinsic thermal excitation remains sufficiently small.

At low temperature, donor impurities or acceptor impurities may no longer be ionized. Dopant freeze-out reduces the carrier density, raises electrical resistance and changes the intended carrier injection and p-n junction response. At high temperature the intrinsic carrier concentration grows aswhen band effective masses and band gap are treated as constant. Once it becomes comparable with the net doping density, it overwhelms the intended electron-hole imbalance; reverse leakage and dissipation increase and useful p/n control is lost.

The usual operating window lies between freeze-out and intrinsic conduction, with mobility and thermal management placing further practical limits. This is a statement about conventional doped-device operation, not a fundamental prohibition on engineered cryogenic or wide-bandgap devices.

An ideal diffusion-dominated p-n junction obeys the Shockley diode equationwith diode ideality factor $\eta =1$ in the simplest model. Forward bias gives exponential current growth; reverse bias gives a nearly constant $-I_s$ until diode reverse breakdown, outside this ideal expression.

For a long abrupt p-n junction in low carrier injection, the diode saturation current isHere $\mathcal{A}$ is area, $N_D,N_A$ are ionized dopant densities, and $D,L$ are minority-carrier diffusion coefficients and diffusion lengths in the appropriate regions. At each temperature, extract $I_s$ either from the reverse-saturation plateau below breakdown or from a forward exponential fit using its measured diode ideality factor.

Extracting a semiconductor band gap from diode saturation current requires correcting for the transport prefactor:A plot against $1/T$ has slope $-E_g/k_B$ when the gap and effective masses are nearly temperature-independent. Alternatively divide the measured $I_s$ by a known $C(T)$ to recover the full $n_i^2(T)$. The prefactor cannot generally be assumed constant over an arbitrarily broad range. Junction-generation or recombination-dominated current can scale as $n_i$ instead, so the diffusion regime should be identified from the current-voltage behaviour.

A photodiode is a semiconductor diode producing photocurrent from photon absorption. Exciting an Electron across the band gap leaves an electron hole. The depletion region's electric field separates the charge carriers; others can arrive by diffusion before electron-hole recombination. Contacts complete the electrical circuit.^[ref]

The useful bridge is from light to a measurable electric current: spectral responsivity converts incident radiant flux into photocurrent, while quantum efficiency counts collected signal charge carriers per incident photon. These answer different questions: how much electric current one watt produces, and how many incident photons contribute to the signal. The worked calculation below makes their relationship explicit.

The planar process fabricates semiconductor devices from a common surface while retaining a protective oxide over the exposed ends of their p-n junctions. Jean Hoerni's patent describes selective openings in silicon dioxide for semiconductor doping and contacts, with oxide left over the p-n junctions. Protection and access are designed together; the surface is not simply stripped after fabrication. This was a distinct enabling contribution to the monolithic integrated circuit.^[ref]

A p-n junction joins regions of a semiconductor with opposite majority charge carriers: Electrons on one side and electron holes on the other. It provides the junction modeled by the Shockley diode equation.

Near an unbiased p-n junction, diffusion leaves exposed ionized donor impurities and acceptor impurities. Their electric field opposes further majority-carrier transfer. At thermal equilibrium, drift and diffusion balance; there is no net electric current. Forward bias reduces the barrier to carrier injection; reverse bias enlarges it. A heavily doped tunnel diode adds a different transport route, quantum tunnelling, that the ordinary Shockley diode equation omits.

A point-contact transistor has two closely spaced rectifying contacts, the emitter and collector, and a third low-electrical resistance base contact to the semiconductor. The Bardeen-Brattain point-contact transistor experiment established amplification using this arrangement. It does not require two fabricated bulk p-n junctions.

For a p-n junction, biasing with the p-type semiconductor at negative electric potential difference relative to the n-type semiconductor.

For a p-n junction at fixed temperature, the Shockley diode equation models its electric current asHere $I_S>0$ is the diode saturation current, $n>0$ the diode ideality factor, $V_T$ the thermal voltage, $k_B$ the Boltzmann constant, and $q>0$ the elementary charge.^[ref]

For an original model example, choose $I_S=1\mathrm{nA}$, $n=2$, and $T=300\mathrm{K}$. Using $k_B=1.380649\times 10^{-23}J/K$ and $q=1.602176634\times 10^{-19}\mathrm{C}$ gives $V_T=25.8520\mathrm{mV}$. Then $V_D=0.600\mathrm{V}$ gives $I_D=0.109591\mathrm{mA}$, whereas $V_D=0.800\mathrm{V}$ gives $I_D=5.24450\mathrm{mA}$. These are predictions of the declared model. There is no universal turn-on electric potential difference: solving the Shockley diode equation for the value needed at a chosen electric current givesAt $I_D\gg I_S$, increasing $V_D$ by $0.100\mathrm{V}$ multiplies the electric current by approximately $e^{0.100/(n{V}_T)}=6.91772$. At $V_D=-0.300\mathrm{V}$ the same model gives $I_D=-0.996979\mathrm{nA}$. Its reverse branch approaches $-I_S$; it cannot describe diode reverse breakdown.

A constructed extension adds internal series electrical resistance $R_s$ to a junction whose electric potential difference is $V_j$. Applying the Kirchhoff cycle law givesFor $R_s=20\Omega$ and the same $I_S,n,T$, sustaining $I_D=5.24450\mathrm{mA}$ needs $V_D=0.904890\mathrm{V}$: $0.800\mathrm{V}$ across the junction plus $0.104890\mathrm{V}$ across its internal electrical resistance. The derivativeshows why the current-voltage characteristic becomes nearly a straight line when the internal series electrical resistance dominates. This is still a fixed-temperature model; self-heating can change $I_S$, $n$ and $V_T$. Real diodes also have leakage and charge-storage effects omitted here.^[ref]

A solar cell converts incident light into electrical power through the photovoltaic effect. A semiconductor p-n junction separates and collects photogenerated Electrons and electron holes. An ideal illuminated junction has output current densityHere $J_{\mathrm{sc}}$ is the short-circuit current density, $J_0$ is the diode saturation current, and $V_{\mathrm{oc}}$ is the open-circuit electric potential difference. The conversion efficiency is the largest delivered $VJ$ divided by the incident power per unit area; the short-circuit and open-circuit operating points themselves deliver zero power.

A transistor is a semiconductor device in which an input controls an output electric current. Used with biasing and an electrical load, it can form an electronic amplifier or a switch. Its power gain comes from an external supply: the input signal controls the conversion of supplied energy into output signal power.

The point-contact transistor makes the idea tangible: two nearby contacts interact through one piece of semiconductor. A bipolar junction transistor instead uses two p-n junctions and a thin intervening region. The distinction matters both for the history and for choosing a physical model.

A tunnel diode is a p-n junction with sufficiently heavy semiconductor doping on both sides to make a thin depletion region and permit substantial interband tunnelling. The neutral regions are degenerate semiconductors. Its distinctive forward current-voltage characteristic contains a peak followed by a valley: over part of the curve, increasing the applied electric potential difference decreases the electric current. The Esaki tunnel-diode experiment made this behavior experimentally concrete.

The useful quantity is the local slope, not the ratio of total voltage to total electric current. With conventional electric current $I$ entering the positive-voltage terminal, defineNegative differential resistance means $g_d<0$, hence $r_d<0$ where defined. A forward operating point can still have $V>0$, $I>0$ and absorbed power $VI>0$. A small voltage increase then gives a negative current increment; this does not make the total electric current negative or turn the device into an unlimited source of energy. The external supply sets the operating point and supplies the energy available for an electronic amplifier.

An original idealized construction explains the shape. Put the n-type semiconductor on the left and the p-type semiconductor on the right. Take $q>0$ as the elementary charge and $V=V_p-V_n$. Increasing forward bias lowers the right-hand Electron energy levels relative to the left. Denote the two reservoir electrochemical potentials by ${\mu }_n,{\mu }_p$, so that ${\mu }_n-{\mu }_p=qV$. At zero temperature, occupied left-hand conduction band states extend up to ${\mu }_n$; empty right-hand valence band states start at ${\mu }_p$. For transfer conserving Electron energy, the available interval isIt is nonempty only when its upper endpoint exceeds its lower endpoint. Both an occupied initial quantum state and an empty final quantum state must exist at the same energy. The Pauli exclusion principle prevents transfer into an already occupied final quantum state.

For the original diagram, choose arbitrary energy units with $E_{c,n}=-0.5$, ${\mu }_n=0$, ${\mu }_p=-u$ and $E_{v,p}=0.5-u$, where $u$ is $qV$ in those units. The available interval has widthThus $L(0.25)=0.25$, $L(0.50)=0.50$, $L(0.70)=0.30$, and $L(1.15)=0$. Initially forward bias opens a transfer window; further forward bias closes it by moving the right-hand valence band edge below the left-hand conduction band edge. This is a state-counting illustration, not a formula for a measured electric current.

For reverse bias, the transfer direction changes: occupied right-hand valence band states can feed empty left-hand conduction band states. In the same construction, $u=-0.70$ opens the interval $0<E<0.70$ for this reverse transfer. A narrow depletion region allows a large reverse quantum tunnelling electric current at small electric potential difference, whereas the ordinary Shockley diode equation predicts only a small reverse saturation electric current before diode reverse breakdown. At zero biasing, equal reservoir occupations give zero net electric current; quantum tunnelling does not require a net equilibrium flow.

A finite-temperature refinement replaces sharp occupation cutoffs with the Fermi-Dirac distribution. An illustrative weak-transfer expression isHere $\mathcal{W}\ge 0$ describes allowed initial/final quantum states and their coupling, and $f_n,f_p$ are Fermi-Dirac distributions with the respective electrochemical potentials. The occupation difference follows by subtracting the reverse transfer factor from the forward one: $f_n(1-f_p)-f_p(1-f_n)=f_n-f_p$. An overlap interval alone does not determine $\mathcal{W}$: transmission probability, density of states, crystal momentum selection and phonons can matter. A complete germanium calculation is more demanding than multiplying two constant density of states factors. At larger forward bias, ordinary carrier injection and diffusion supply a rising current branch even after direct band overlap is lost.