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In a photoelectric effect experiment, illuminate a clean metal photocathode with monochromatic light and use a retarding voltage to measure the maximum emitted-electron kinetic energy. The relation $e{V}_{\mathrm{stop}}=h\nu -\varphi$ has a frequency threshold and a slope $h$. Increasing intensity chiefly changes the number emitted, while increasing frequency increases the available energy per emission. This supports energy transfer in units $h\nu$, with $\varphi$ the work function. The retarding-potential measurement distinguishes the electron energy from the photocurrent; the two respond differently to changes of the light.

In electron diffraction, accelerate electrons through a known voltage and measure the angular scattering pattern from a crystal. Distinct diffraction maxima occur where the periodic atomic arrangement gives constructive interference. Their positions give a wavelength through the crystal spacing and diffraction geometry, agreeing with the de Broglie wavelength $\lambda =h/p$, with $p\simeq \sqrt{2m_{e}eV}$ in the nonrelativistic regime. Varying the accelerating voltage shifts the maxima in the predicted way. A localized classical projectile model alone would not explain this wavelength-dependent interference pattern.

One conduction electron per atom gives number density $n=\rho N_A/M\simeq 8.50\times 10^{28}{\mathrm{m}}^{-3}$. Filling two spin states per momentum state in the three-dimensional Fermi gas gives $k_F=(3{\pi }^{2}n{)}^{1/3}$ andThe Fermi temperature greatly exceeds ordinary temperatures, explaining why these conduction electrons are degenerate rather than a classical Maxwell gas. The numerical result uses the stipulated free-electron band and bare electron mass, rather than a detailed copper band structure.

Three experimental tests probe different consequences of special relativity. The Michelson-Morley experiment compares light round trips along perpendicular interferometer arms while changing the apparatus orientation. Its small observed orientation-dependent fringe shift contradicts the simple stationary-aether prediction and supports orientation-independent round-trip light speed. It does not, alone, exclude every alternative theory.^[ref]

In the muon storage-ring time-dilation experiment, fast circulating muons live longer in laboratory time than muons at rest. Measuring decay counts versus elapsed laboratory time and independently determining the beam Lorentz factor tests ${\tau }_{\mathrm{lab}}=\gamma {\tau }_0$. Circular motion includes acceleration, so this also tests the applicability of accumulated proper time along the stored trajectory.^[ref]

Bertozzi's electron speed-energy experiment measures electron time of flight and deposited kinetic energy independently. An electrostatic accelerator and a linear accelerator increase the energy while the measured speed approaches the light-speed limit. Calorimetry checks that the additional beam energy is real, rather than inferring it only from an assumed voltage-to-speed relation. The result supports relativistic $K=(\gamma -1)m{c}^2$ rather than extending $K=m{v}^2/2$ to arbitrarily large speeds.^[ref]

For the two ships, set launch time to zero and measure Earth time in years. Their Lorentz factors are ${\gamma }_A=5/4$ and ${\gamma }_B=5/3$. Bob's thirtieth birthday occurs after one year of his proper time, so its Earth coordinates areIf Alice sends at Earth time $t_A$, her position is $x_A=3c{t}_A/5$. The left-going light signal obeys $x=x_A-c(t-t_A)$. Intersection with Bob givesAlice's elapsed proper time is thereforeShe sends two months after her twenty-ninth birthday. This compares the emission and reception events; the captains' clocks need only be synchronized at launch, not kept numerically synchronized afterward.

The relative recession speed isThe longitudinal relativistic Doppler effect then givesEquivalently, the left-going photon has Earth frequency $f_0/[{\gamma }_A(1+3/5)]=f_0/2$, and Bob's frame supplies another factor ${\gamma }_B(1-4/5)=1/3$. Both methods give the same redshift.

Take the two-dimensional electron gas in the $xy$ plane, the Hall bar along $x$, and $\mathbf{B}=B\hat{\mathbf{z}}$ with $B>0$ perpendicular to it. An electron has charge $-e$. The confining electron potential energy $U(y)$ is approximately flat inside a wide strip and rises at either boundary; smooth quenched disorder adds hills and valleys. For a slowly varying edge, each spin-resolved Landau level approximately followsHere $s=\pm 1$, and $Y$ is the guiding centre. For $\mathbf{A}=(-By,0,0)$, $Y={\ell }_B^2{k}_x$ and the edge group velocity isThus electrons move along $+x$ at the upper edge and $-x$ at the lower edge. The Lorentz force gives counterclockwise bulk cyclotron motion in this convention. At a hard boundary its interrupted circles become directed skipping orbits; a smooth boundary gives the corresponding guiding-centre drift. Smooth bulk quenched disorder generally gives closed drift contours around localized hills or valleys, with extended trajectories appearing near a broadened level's critical energy. Realistic electrostatic screening can produce alternating compressible quantum Hall edge strips and incompressible quantum Hall edge strips, so the unscreened bending curves are an effective sketch rather than an exact self-consistent edge profile.

In the original diagram, contacts are ordered around the electron propagation direction: upper-left $1\to 2\to 3$, then lower-right $4\to 5\to 6$. Let $I_1=I$, $I_4=-I$ and the other leads be ideal equilibrating voltage probes. Define $R_H=(V_2-V_6)/I$ and $R_{xx}=(V_2-V_3)/I$. These choices fix the voltage sign; reversing the field reverses chirality and the Hall polarity. For spin-resolved plateau index $N$,At fixed sheet carrier density and increasing field, $N$ decreases, giving successively higher Hall plateaus; longitudinal peaks occur between them. Unresolved spin branches can suppress odd plateaus. The sketch uses resistance magnitudes, and every integer step is not promised in an arbitrary sample.

For Fermi-energy oscillations in a two-dimensional electron gas, first distinguish fixed density from fixed reservoir chemical potential. At negligible temperature the former is determined by state counting. Each resolved Landau level contains $eB/h$ states per unit area, soIgnoring spin and broadening for the counting illustration, if $N<\nu <N+1$ then $N$ levels are full and level $N$ is partly full: $\mu =E_N$. At fixed $n_s$, increasing $B$ increases both level energy and degeneracy. The partly filled level rises in energy until the lower levels can contain all electrons; $\mu$ then drops to the next lower level. The resulting sawtooth is periodic in $1/B$, with $\Delta (1/B)=e/(n_{s}h)$ per resolved branch. At an exactly integer filling in an ideal gap, any chemical potential within the gap gives the same zero-temperature particle number; the plotted discontinuity denotes its limiting values.

At fixed $B$ while $n_s$ increases, the ideal chemical potential stays at a partly occupied level and steps upward after each additional density $eB/h$. It therefore has a staircase superposed on the rising zero-field trend, not a repeated downward sawtooth. Landau-level broadening and finite temperature smooth both ideal graphs. With an externally pinned chemical potential, density changes instead; the fixed-density sawtooth cannot simultaneously be imposed. In a realistic disordered sample, the Fermi energy sweeps localized states between transport-carrying level centres. The following schematic omits spin for clarity and does not attempt an interaction-corrected density of states.

For $N$ transmitted spin-resolved quantum Hall edge states, the Landauer-Büttiker formula reduces, in that contact order, toZero probe currents imply $V_2=V_3=V_1$ and $V_5=V_6=V_4$. Hence $I=(N{e}^2/h)(V_1-V_4)$ and the boxed resistance results follow. The spin-resolved conductance quantum arises because the one-dimensional density of states times velocity is $1/h$ per unit energy; a reservoir imbalance supplies $e^2\Delta V/h$ per channel. Its value does not depend on edge slope or sample width.

On a plateau, opposite-moving edge channels are separated by a wide bulk with a mobility gap. Ordinary elastic scattering on one edge has no counterpropagating channel into which to reflect; closed bulk orbits do not connect the contacts. Changing $B$ or $n_s$ can alter the occupancy of localized states without changing the number of transmitting edge channels. This accounts for the finite plateau width, which an entirely clean set of sharp levels would not explain. Accuracy requires negligible backscattering between opposite edges, low enough current to avoid breakdown, equilibrating contacts and negligible probe loading. The finite-width plateau and the precision of its quantized value are related but distinct observations.

An antidot is a depleted potential hill, not a potential well. Its closed edge circulates oppositely to the outer boundary. In a constriction, tunnelling through an antidot orbit can transfer an electron from a forward edge into the returning edge: resonant antidot backscattering produces conductance dips. For $N$ otherwise open spin-resolved channels and one active resonance,At symmetric coupling a single resonance can remove $e^2/h$; asymmetry or thermal averaging reduces its depth. If the background constriction is closed and the resonant route instead supplies forward transmission, peaks occur. The lead connectivity must therefore accompany the conductance sketch. In the fixed-area single-particle limit, successive alignments change enclosed flux by ${\Phi }_0=h/e$, giving the Aharonov-Bohm antidot periodThe effective orbit area, not merely the etched island area, enters. Charging, screening and spin can modify this simple sequence; two coupled spin branches can yield a near-$h/(2e)$ pattern without changing the elementary flux quantum.^[ref]

A Landau quasiparticle is an electron-like excitation dressed by the interacting medium. Adiabatic continuity connects low-energy states of an ordinary Fermi liquid to those of a free Fermi gas without changing their particle statistics or conserved quantum numbers. The excitation has a renormalized dispersion, effective mass, magnetic response and finite lifetime. Pauli exclusion principle restricts collisions near the Fermi surface; in a regular three-dimensional Fermi liquid,Thus the width is small compared with excitation energy sufficiently near the surface at low temperature. This permits particle-like counting and transport even when microscopic interactions are strong. It does not make every interaction disappear: the Landau quasiparticle energy functional contains residual interactions,Specific heats and magnetic susceptibilities need not equal their bare-gas values. Logarithmic corrections can modify the lifetime scale in two dimensions, and a Luttinger liquid or a fractional Hall fluid is not an ordinary weakly perturbed electron gas.

An electron-like excitation in a normal metal and a neutral fermionic excitation in normal helium-3 are Landau quasiparticles. More generally, phonons, magnons and excitons are particle-like collective excitations, with their own statistics and quantum numbers; they are not all Landau quasiparticles. composite fermions are another emergent description, reorganizing correlations in a partly occupied Landau level rather than simply replacing the electron mass in an ordinary band.

Attach two statistical flux quanta ${\Phi }_0=h/e$ to each electron. Even attachment preserves fermionic exchange statistics, while the average statistical field opposes the applied field:This is an effective description of correlations, not literal flux tubes produced by small solenoids. An integer number of filled effective levels can give an incompressible electronic fractional Hall state. This is the correspondence between integer Hall quantization of composite fermions and selected fractional Hall states of electrons.^[ref]

Setting the signed effective filling to integer $p$ givesPositive $p$ gives $1/3,2/5,3/7,\dots$ below $1/2$. Negative $p=-q$, $q>0$, gives $q/(2q-1)$ above it, including $2/3,3/5,4/7,\dots$. The sign records reversed $B^{\ast }$. At $\nu =1/2$, the mean effective field vanishes, so the simplest description is a compressible composite-fermion sea rather than another member with finite integer $p$. Fractional charged excitations of gapped Hall states and the charge used in this semiclassical composite-fermion orbit description should not be conflated.

A direct probe away from the incompressible fractions is composite-fermion geometric resonance. One implementation patterned a high-mobility GaAs/AlGaAs Hall bar into periodic and random antidot arrays. electron beam lithography followed by an approximately $130\mathrm{nm}$ reactive-ion etch made arrays with periods $400$–$700\mathrm{nm}$. Four-terminal low-current measurements swept a perpendicular magnetic field at low temperature; red-light illumination varied density and the modulation. Periodic arrays showed commensurability structure near half filling and a Hall anomaly; matched random arrays did not. Unpatterned sections supplied another reference.^[ref]

The semiclassical explanation uses, for a fully spin-polarized sea,The mass cancels from the orbit radius. A selected orbit fits the lattice when $2R_c^{\ast }\simeq Ca$, with a geometry-dependent constant $C$ of order unity. Pinned orbits around antidots then alter longitudinal transport, producing features nearThe simplest single-antidot scale has $C\simeq 1$; detailed peak positions require the actual potential and orbit family. The two field directions bend orbits oppositely. The diagnostic is an orbit scale controlled by the small residual $B^{\ast }$, rather than the much larger applied $B$. At the same density the fully polarized $k_F^{\ast }$ is $\sqrt{2}$ times the zero-field spin-degenerate electron value; this is an independent counting test.

Calibrate density from independent Hall/filling measurements and compare several lattice periods. Use small excitation and temperature sweeps, and check periodic, random and unpatterned regions. Density variation changes both $B_{1/2}$ and the orbit scale, so simply plotting against uncorrected field can mislead. mean free path and density inhomogeneity limit resolution; illumination can soften or substantially change the imposed potential, so it cannot automatically be treated as density adjustment alone. These qualifications are part of the inference from geometry to emergent particles, rather than a claim that every feature near half filling is a new fractional plateau.

For a double quantum dot, write $(n_L,n_R)$ for occupation. Tune a bias window allowing the cycle $(0,1)\to (1,1)\to (0,2)\to (0,1)$. Two electrons in the same lowest orbital must form a singlet state by the Pauli exclusion principle. The $(0,2)$ triplet requires an excited orbital, with an energy cost ${\Delta }_{ST}$ above the accessible window. Approximately spin-conserving tunnelling transfers $S(1,1)$ into $S(0,2)$, but cannot transfer $T(1,1)$ into that singlet. Once a triplet loads, transport stops until spin relaxation or mixing occurs: this is Pauli spin blockade. The reverse bias can avoid trapping in this sequence, producing rectification. Coulomb charging sets the allowed occupancies, but the extra blockade is a spin-selection restriction, not merely an energetically forbidden charge state.

magnetically driven spin-blockade lifting uses electron paramagnetic resonance. A transverse oscillating magnetic field drives spin transitions atFlipping one spin in $|\uparrow \uparrow ⟩$ gives $|\downarrow \uparrow ⟩=(|T_0⟩-|S⟩)/\sqrt{2}$, which has a singlet component and can resume charge transfer. A perfectly uniform simultaneous rotation of two identical spins preserves their triplet character; effective relative rotation needs unequal local resonance conditions or another singlet–triplet mixing mechanism. In a real GaAs double dot, inhomogeneous nuclear fields can supply that difference. Hyperfine mixing, spin-orbit effects, cotunnelling and ordinary relaxation also produce leakage and must be distinguished from driven resonance.

A demonstrated device used surface Ti/Au gates to define two dots in a GaAs/AlGaAs electron gas $90\mathrm{nm}$ below the surface. An insulated on-chip gold coplanar stripline supplied the oscillating magnetic field. With the dots biased in spin blockade, RF excitation produced current peaks at the two field polarities satisfying resonance. Peak positions varied linearly with frequency, giving $|g^{\ast }|=0.35\pm 0.01$. RF applied to a side gate instead gave negligible response, testing magnetic rather than electric excitation. Gate pulses and RF bursts further produced coherent spin-rotation oscillations in the charge readout.^[ref]

An ideal isolated resonant spin has Rabi oscillation probability $P_{\mathrm{flip}}(t)={\sin }^2({\Omega }_{R}t/2)$. For a linearly oscillating field of peak amplitude $B_{\mathrm{ac}}$, the rotating-wave convention is ${\Omega }_R=|g^{\ast }|{\mu }_B{B}_{\mathrm{ac}}/(2\hslash )$. Repeated initialization, isolated manipulation and blockade-sensitive readout can therefore map a damped oscillatory singlet yield into an average current. Nuclear fluctuations, readout rates and dephasing change the envelope and contrast; an ideal sine squared is not a reconstruction of experimental data. Compare RF on/off, resonance tracking with frequency, drive-amplitude dependence and detuning controls. Current enhancement alone does not prove coherent rotations; the pulse-duration oscillations provide the further time-domain test.

Use $e>0$, $B>0$ along $+z$, and $U(y)$ for the electron's confinement potential energy. The spin-resolved Landau level branches in the smooth-edge approximation areThe spin labels denote upper and lower energies; the sign of a material's effective $g$ factor is not inferred from the stated positive splitting. In units of $\hslash {\omega }_c$, the four occupied bulk energies are $1/3,2/3,4/3,5/3$. A chemical potential in $(5/3,7/3)$ therefore gives filling factor four. The branches rise at both confining edges and cross the common Fermi energy once at each edge. Each crossing is one spin-resolved quantum Hall edge state; there are four on either side. The two spin branches within an orbital level are separated by $\hslash {\omega }_c/3$, while the intervening gap to the next orbital pair is $2\hslash {\omega }_c/3$.

In Landau gauge for a uniform magnetic field $\mathbf{A}=(-By,0,0)$, the guiding centre is $Y=\hslash k_x/(eB)$. The group velocity isThus the upper edge in the original trajectory diagram carries electrons to the right and the lower edge to the left. Reversing the magnetic field reverses both arrows. Semiclassically these are skipping trajectories; quantum mechanically the guiding centres label propagating quantum Hall edge states. The larger orbital-plus-spin energy crosses the Fermi energy farther toward the interior, because less confinement energy is needed. Opposite spins in one orbital branch are therefore spatially separated.

In a clean bulk with the Fermi energy between Landau levels, there are no extended bulk states at that energy. Occupied bulk cyclotron orbits lie below it; one must not draw them as extra conducting Fermi-level channels. Smooth disorder can instead produce localized bulk contours without adding a direct source-to-drain channel.

For the spin separation at a smooth quantum Hall edge, linearize the confinement energy at a crossing. Compensating a spin energy difference by a potential-energy change givesHere $V^{\prime }$ is interpreted as the specified slope of electron potential energy. If it denotes electrostatic voltage per length instead, the denominator is $e|V^{\prime }|$. The two edges of a neck and the two sides of an antidot have oppositely directed slopes; the formula is a positive local separation on any one edge. For local filling two, only the $n=0$ spin pair is occupied at the neck minimum: $E_{0,+}+U_{\min }<E_F<E_{1,-}+U_{\min }$. Raising both branches with the confinement produces two crossings on each side, as shown in the original neck sketch. This fixed-slope estimate precedes self-consistent electrostatic screening.

An antidot is a depleted potential hill. guiding centres circulate around its closed equipotentials, with chirality opposite to the outer sample edge. A phase-coherent round trip contributes magnetic phase $2\pi BS/{\Phi }_0$, with ${\Phi }_0=h/e$. A localized orbit resonant with the incident energy can transfer an electron between extended channels. If the outgoing channel returns toward the injecting reservoir, the process is resonant reflection and reduces electrical conductance. If coupling instead connects an otherwise blocked incident channel to the far reservoir, it is resonant transmission and adds electrical conductance. Transmission peaks require that forward connectivity; a closed orbit by itself does not guarantee them. Interchannel scattering can change which orbit participates.^[ref]

For the antidot resonance conductance bounds with one active spin-resolved resonance, writeHere ${\Gamma }_L,{\Gamma }_R$ are energy broadenings; the corresponding escape rates are ${\Gamma }_L/\hslash ,{\Gamma }_R/\hslash$. In a reflection-dominated configuration with two otherwise transmitted channels, $G=(e^2/h)(2-\mathcal{L})$: a $2e^2/h$ background can dip to $e^2/h$. In a transmission-dominated configuration with one spectator channel and the second otherwise blocked, $G=(e^2/h)(1+\mathcal{L})$: peaks rise from $e^2/h$ toward $2e^2/h$. These are the two ideal channel-count examples plotted below. More generally, $G=(e^2/h)(N_{\mathrm{open}}-R)$ or $(e^2/h)(N_{\mathrm{dir}}+T)$; a different spectator count changes the integer offset. The constriction filling alone does not specify every tunnel coupling or resonance height. Equal couplings permit unit resonant transfer in the isolated-level model; asymmetry, temperature and dephasing reduce the contrast. Holding the effective orbit area approximately fixed gives $\Delta B\simeq h/(eS)$ for one branch, not a universal charging-corrected period.

In quantum-dot versus antidot resonance topology, a quantum dot is a potential well holding a finite electron island. Its closed guiding-centre circulation is reversed relative to an antidot at the same field. With two barriers in series, current follows source $\to$ dot $\to$ drain; off resonance there need not be a direct conducting path. A gate shifts a level or an addition electrochemical potential into alignment with the reservoirs and produces a electrical conductance peak. For an isolated coherent spin-resolved level, the zero-temperature peak is at most $e^2/h$ and reaches it only for equal couplings; unresolved noninteracting spin degeneracy doubles this bound. In weak sequential tunnelling, peak height depends on rates and temperature rather than being quantized. Charging produces Coulomb blockade peaks with spacing set by addition energy and gate lever arm. An antidot also supports discrete orbit/charging resonances, but can be side-coupled to already open channels and produce dips. Gate voltage changes both orbit area and confinement, whereas a magnetic sweep directly changes enclosed flux.

Coulomb interactions require a self-consistent confinement potential. A gradual decrease in electron density cannot leave arbitrary uncompensated donor charge at no cost. Partly occupied Landau levels have a large charge response: electrostatic screening flattens their effective energy near the Fermi energy over compressible quantum Hall edge strips. Between them, integer-filled incompressible quantum Hall edge strips have a gap, weak density response and most of the potential variation. In an idealized cross-section the effective branch thus alternates between flat, partially occupied portions and rising portions crossing a gap; its carrier density varies oppositely. The bare levels still have Landau level and spin splittings locally, but the common electrostatic potential is no longer an imposed straight slope. exchange interaction can additionally renormalize spin gaps. Widths must follow electrostatics and the density gradient, so the unscreened $E_Z/|V^{\prime }|$ separation is not a quantitative screened-strip width.^[ref]

A modulation-doped GaAs-AlGaAs electron gas is confined on the GaAs side of the interface. The larger-gap AlGaAs supplies a conduction-band barrier; charge transfer from remote donors and the resulting electric field bend the bands into an approximately triangular well. transverse electronic mode wavefunctions are confined normal to the interface but free in its plane. electrons settle into the well until their electrochemical potential agrees with the donor/contact environment. An undoped spacer separates mobile electrons from ionized donors, reducing impurity scattering. Equilibrium has one Fermi level across the structure; the conduction-band edge is not flat. Surface depletion and the cap also affect the profile. The original drawing illustrates one occupied confinement transverse electronic mode; a single spatial electron gas need not in general imply only one occupied vertical transverse electronic mode.

molecular beam epitaxy can grow a clean GaAs buffer/channel, an undoped AlGaAs spacer, a Si-doped AlGaAs supply region and a protective GaAs cap on a suitable substrate. Control composition, interface quality and background impurities during growth; placing dopants directly in the channel defeats the principal mobility advantage. Define a mesa or isolation region, fabricate low-resistance ohmic contacts to the buried gas, and pattern fine metal split gates by electron beam lithography and the lift-off process. Negative gate bias depletes the underlying gas, leaving a narrow channel between the gates. Check contact resistance, leakage, carrier density and mobility; operation with ballistic electron transport requires channel length shorter than the relevant scattering lengths and smooth confinement on the wavelength scale. The lithographic gap does not equal the electrical width because of lateral depletion.

For a long uniform channel supporting ballistic electron transport, transverse confinement creates thresholds $E_n$ with continuous longitudinal propagation above each threshold. One directed spin branch of a transverse electronic mode has states per length $dk/(2\pi )$ and group velocity $v={\hslash }^{-1}dE/dk$. Hence $vdk/(2\pi )=dE/h$: velocity cancels the one-dimensional density of states. Including two unresolved spin states,For low temperature and small bias, a fully open transverse electronic mode has $T_n(E_F)=1$, givingThe assumptions are ideal reservoirs/contacts, negligible reflection and interactions that would invalidate the independent-subband description, and unresolved spin splitting. A resolved spin branch contributes $e^2/h$. The finite two-terminal electrical resistance is a contact/mode-injection effect, despite the absence of dissipative scattering inside the ideal channel.

For voltage partition in a ballistic constriction, a short saddle has strong local electric-field and electrostatic screening variation near its entrances and barrier, rather than the uniform Ohmic voltage gradient of a diffusive wire. Right-moving incident states inherit the source distribution and left-moving states the drain distribution; there is no unique local equilibrium chemical potential inside an ideal ballistic saddle. The electrostatic potential must be determined self-consistently. In a symmetric rigid-barrier approximation, the barrier follows the mean lead potential and half the electrochemical bias lies on each side. This is a stated approximation, not a universal spatial voltage profile.

For a saddle $U=U_0-m^{\ast }{\omega }_x^2{x}^2/2+m^{\ast }{\omega }_y^2{y}^2/2$, transverse electronic mode thresholds are $E_n=U_0+\hslash {\omega }_y(n+1/2)$. The smooth-barrier transmission is $T_n(E)=[1+\exp (-2\pi (E-E_n)/(\hslash {\omega }_x)){]}^{-1}$, approaching a step for a sharp threshold on the bias/thermal scale.^[ref]

Let ${\mu }_{S,D}=E_F\pm eV/2$ and assume no additional bias dependence of $T_n$. At zero temperature,When the source and drain sample $N+1$ and $N$ thresholds, the differential electrical conductance is $(N+1/2)2e^2/h$. These half plateaus arise from the two ends of the bias window, not fractional carriers. The dc ratio $I/V$ need not share their plateau values. Heating, spin splitting and interaction-induced features must be distinguished experimentally.

In bias spectroscopy of one-dimensional subbands, plot differential electrical conductance or its gate derivative against gate bias and source-drain bias. Threshold branches occur where $E_n(V_g)={\mu }_S$ or ${\mu }_D$. When one bias-window edge meets $E_n$ and the other $E_{n+1}$,Thus the intersections of adjacent threshold branches calibrate the one-dimensional spacing directly in energy. A gate lever arm $\alpha =-e^{-1}\partial E_n/\partial V_g$ can then convert gate intervals to energy; it should be measured rather than guessed. Asymmetric bias partition, a moving barrier or a gate-dependent spacing modifies slopes and plateau weights, requiring the corresponding self-consistent bias model.

A single gate-defined dot can trap one electron whose lower and upper Zeeman states define $|0⟩,|1⟩$. Initialize by energy-selective loading or relaxation, coherently rotate the spin with a resonant magnetic drive or electrically generated spin-dependent drive, and use neighbouring-dot exchange interaction for two-qubit operations. The dot supplies confinement; a full qubit also requires control, coherence and calibrated readout. A nearby quantum point contact or single-electron transistor detects charge capacitively, so spin-to-charge conversion is needed.

In energy-selective spin readout, set the reservoir chemical potential between the two spin-dependent removal energies. The upper state can tunnel out; the lower remains. Reloading can create a temporary empty-dot signal that a time-resolved charge detector records. Resolving this window requires sufficiently small electron-temperature broadening and stable level alignment. The escape should be faster than spin relaxation, but the empty interval must remain long enough for detection. Useful controls include known-state preparation, sensor-noise measurement, varied waiting time and readout pulses, and checks for missed events or thermally activated false escape.^[ref]

tunnel-rate-selective spin readout instead places both candidate removal energies on the allowed side of the reservoir and uses different escape rates ${\Gamma }_f\gg {\Gamma }_s$. After a window $\tau$ with ${\Gamma }_f^{-1}\ll \tau \ll {\Gamma }_s^{-1}$, the fast state has usually changed charge while the slow state has not. It does not require the reservoir Fermi edge to resolve the state splitting, although it still requires controlled charge occupation, substantial rate contrast and relaxation slower than the mapping. The contrast must have a physical origin. A demonstrated single-dot implementation uses two-electron singlet and triplet states: Pauli symmetry puts the triplet's second electron in a higher orbital with stronger lead coupling. Nearly degenerate states can then be distinguished by rate rather than by their energy difference.^[ref]

For a bare one-electron Zeeman pair in the same orbital with an unpolarized lead, different tunnel rates are not automatic. A spin-selective barrier/reservoir or another spin-dependent mechanism is needed. The two-electron singlet/triplet example is a different state encoding/readout arrangement, not evidence that the bare single-electron pair already has useful rate contrast.

For the optimal tunnel-rate readout time, assume no relaxation and equal prior probabilities. The fast-state missed-event probability is $e^{-{\Gamma }_f\tau }$ and the slow-state false-event probability is $1-e^{-{\Gamma }_s\tau }$. Their average is minimized atFinite detector bandwidth, preparation errors, state relaxation and unwanted reloading alter this optimum. energy selection is direct for a resolved single-electron spin but sensitive to the narrow alignment window; rate selection has a wider energy operating window but requires engineered rate contrast and a carefully timed charge measurement. Neither method is an ideal nondestructive spin measurement merely because the charge sensor itself is noninvasive.

graphene is a two-dimensional honeycomb lattice with two sublattices. Nearest-neighbour hopping gives two bands $E_{\pm }(\mathbf{k})=\pm t|{\sum }_{j=1}^3{e}^{i\mathbf{k}\cdot {\mathbf{\delta }}_j}|$. They touch at two inequivalent valleys. Expanding near valley $\tau =\pm 1$ givesThe two-component spinor describes sublattice amplitudes, not real spin. This is a massless two-dimensional Dirac Hamiltonian with material velocity $v_F$ in place of $c$. The emergent band quasiparticles are relativistic in this mathematical sense; the electron's vacuum rest mass is not set to zero. Real spin and valley each contribute a degeneracy of two in the ideal low-energy model.

A single-walled carbon nanotube is a rolled graphene sheet with carbon nanotube chiral vector ${\mathbf{C}}_h=n{\mathbf{a}}_1+m{\mathbf{a}}_2$. Periodicity requires $\mathbf{k}\cdot {\mathbf{C}}_h=2\pi \ell$, selecting lines through graphene momentum space and producing one-dimensional transverse electronic modes. Near a valley,A quantization line through one of the Dirac valleys in graphene gives a metallic branch; ideal nanotube zone folding gives the criterion $n-m\equiv 0(\mathrm{mod}3)$. Otherwise the nearest line misses the valley and opens $E_g=2\hslash v_F|q_{\perp }|$. The transverse momentum gives a carbon-nanotube Dirac mass, with $m_{\mathrm{eff}}=\hslash |q_{\perp }|/v_F$. For a large-radius ideal semiconducting tube, $|q_{\perp }|\simeq 2/(3d)$ and $E_g\simeq 4\hslash v_F/(3d)$, showing the inverse-diameter gap. Curvature, strain, spin-orbit coupling and interactions can change the simple classification; nominally metallic non-armchair tubes can acquire small gaps. One-dimensional transverse electronic mode thresholds give Van Hove singularities, unlike graphene's low-energy density of states proportional to $|E|$.

A gate changes occupation and the Fermi level in both systems. Ideal monolayer graphene can be tuned through charge neutrality from holes to electrons, but an ordinary scalar gate does not open a bulk band gap. Including spin and valley,The gate relation includes geometric and quantum capacitances, so one should not equate gate voltage to Fermi energy without the capacitance model. A semiconducting carbon nanotube can instead be depleted when its Fermi level lies in a gap and turned on in electron or hole bands. Contact Schottky barriers can strongly influence the observed nanotube field effect. A truly gapless ideal metallic tube cannot be switched off simply by moving the Fermi level through its band crossing. These gate responses reflect band structure and contacts, not a change of wrapping indices.

A trajectory-resolving ballistic experiment. Use a high-mobility modulation-doped GaAs-AlGaAs heterostructure with a two-dimensional electron gas. Grow the layers by molecular-beam epitaxy, separate the donor layer from the conducting interface with an undoped spacer, and pattern an isolated mesa with ohmic reservoir contacts. Electron-beam lithography defines metal split gates; negative gate voltage depletes the underlying electron gas, leaving narrow adjustable injector and collector quantum point contacts along an edge. Keep the relevant path shorter than the momentum-relaxation mean free path, cool to suppress phonon scattering and thermal smearing, and use a small excitation to avoid heating.

Inject a low-frequency current through one contact to a distant drain and measure the collector's open-circuit voltage with a high-input-impedance amplifier. Sweep perpendicular magnetic field and gate settings. The cyclotron radius is $r_c=\hslash k_F/(e|B|)$, with $k_F=\sqrt{2\pi n_s}$ for a spin-degenerate single-valley gas. For contact separation $L$, semicircular or skipping trajectories focus into the collector whenThe appropriate field sign bends carriers toward the collector; the opposite sign suppresses the peaks. Density-dependent focusing positions, suppression with increased scattering and reproducible gate control distinguish directional ballistic propagation from an ordinary diffusive voltage. Quantum interference may add fine structure, but the basic focusing signal does not require phase coherence over every path. Split-gate injection and collection in a two-dimensional gas were directly demonstrated in the original focusing experiment.^[ref]

Multi-probe current bookkeeping. For one directed spin-resolved mode, velocity times one-dimensional density of states gives a particle flux $dE/h$. A small reservoir electrochemical-energy shift ${\mu }_j$ therefore supplies excess flux ${\mu }_j/h$. Let $N_i$ be the number of propagating modes at lead $i$, $R_{ii}$ their summed return probability, and $T_{ij}$ the total transmission from reservoir $j$ into lead $i$. Multiplying outgoing-minus-incoming electron flux by charge $-e$ gives the source's convention,The reservoirs equilibrate arriving carriers; an ideal voltage probe adjusts its chemical potential until its net current vanishes. Here ${\mu }_i$ is an energy, not a voltage. Choose the lead-voltage convention ${\mu }_i=-e{V}_i$ and positive conventional current injected into the junction. The working equation is thenConservation of scattering probability and gauge invariance require both column and row balance: every outgoing channel is accounted for and equal voltages give zero current. The counts $M,N$ below include every occupied internal channel; an extra factor of two must not be inserted if spin is already counted. If one instead counts orbital channels with unresolved spin degeneracy, double all transmission counts consistently.

Zero-field routing. The original diagram labels lead 1 at the left, 2 above, 3 at the right and 4 below. With columns denoting injectors and rows collectors, straight-through ballistic routing and the stipulated excess-wide-channel rule giveThere is no reflection in this ideal routing model. Set $V_4=0$, $I_2=I_3=0$, and $I_1=I=-I_4$. The two probe equations giveThusThe derivation assumes $N>M>0$. At $N=M$, the ideal network splits into two disconnected opposite-lead pairs and cannot carry the imposed 1-to-4 current at finite voltage; the divergence diagnoses failure of that limiting transport configuration, not an infinite dissipative resistance of each channel. Negative bend resistance is a nonlocal voltage sign, compatible with positive total dissipated power.

Positive field. At $+B_0$, left-deflected incoming carriers go $1\to 2$, $2\to 3$, $3\to 4$. Lead 4 supplies $M$ modes to narrow lead 1; the remaining $N-M$ enter wide lead 3. The balanced transmission matrix isTherefore $V_2=V_1$, $V_3=M{V}_1/N$ and $I=g_{0}M{V}_1$, givingNegative field. Reversing the chirality gives ${\mathsf{T}}_{-}={\mathsf{T}}_{+}^{\mathsf{T}}$, as expected from reciprocity for this spin-independent routing model. With $V_4=0$, the zero-current conditions become $V_3=V_4=0$ and $V_2=V_3=0$. ThusThis does not contradict reciprocity: the general relation interchanges the current and voltage lead pairs when reversing field; it does not require the same fixed-contact four-terminal resistance to be even in $B$.

Comparison with the measured trace. The PDF shows a negative region around zero field, approximately zero signal at sufficiently negative field, and a positive rising resistance near $+0.4\mathrm{T}$ and above. These signs match the three routing limits. Near zero field the depth is roughly a few tenths of a kilohm; the graph does not supply $M,N$, so there is no justified exact amplitude fit. Rounded corners, collimation and finite cyclotron radius continuously change which outgoing lead is reached between the ideal limits. Skipping trajectories and geometrical focusing can produce shoulders or resonances. At larger positive fields magnetic depopulation and spin resolution can change the mode counts, increasing the positive resistance or producing structure; disorder, incomplete equilibration and finite temperature round ideal features. These are candidate mechanisms, not uniquely established assignments of every small feature from one trace.

Integer Hall transport and filling. A clean two-dimensional electron gas at low temperature in a strong perpendicular magnetic field forms Landau levels with orbital spacing $\hslash {\omega }_c$, where ${\omega }_c=e|B|/m^{\ast }$. Examples include semiconductor heterojunctions and inversion layers. On integer plateaus,with integer plateau index $\nu$. The density of states in one resolved Landau branch is $e|B|/h$ per unit area, so the actual filling factor isIt varies continuously with density and field. Within a disorder-broadened plateau, localized states can change occupation without changing the integer number of transporting edge branches; the filling need not equal the plateau integer at every point in that interval.

At a boundary, the confining potential bends the Landau energies through the Fermi energy, giving chiral edge states, interpreted semiclassically as skipping orbits. Opposite edges carry opposite propagation directions. An ideal spin-resolved transmitted edge channel contributes $e^2/h$; $\nu$ such channels give $I=\nu (e^2/h)(V_S-V_D)$. Chirality and suppressed backscattering between well-separated edges explain vanishing longitudinal voltage. Ideal reservoirs and appropriate probe equilibration are part of this edge-state transport model.

A gated antidot. A local repulsive gate potential depletes an island inside the Hall bar. Edge states circulate around its boundary as closed antidot orbits. When a localized orbit is weakly coupled to extended channels on opposite sides, resonance at the reservoir electrochemical potential permits backscattering and produces conductance dips on an otherwise quantized transmitting plateau. If the path instead adds a transmission route between otherwise disconnected channels, resonant peaks can occur: the sign depends on the device's tunnel connectivity and what conductance is measured. An isolated antidot too far from every conducting edge has negligible transport signature.

For the simplest opposite-edge backscattering picture with one active branch,where $f$ branches would otherwise transmit. A gate moves the resonance through the Fermi energy by changing both confinement and orbit area. Stronger depletion of the constrictions also changes $f$, producing broad conductance plateaus or pinch-off, with narrow resonances superposed where coupling is finite. Low temperature resolves individual resonances; thermal and tunnel broadening can merge them.

For a fixed-area single-electron orbit, a phase change of $2\pi$ corresponds toSweeping gate voltage at fixed field shifts enclosed area and level energy, giving oscillatory resonance tracks. This period is not automatically set by the lithographic gate area. Charging energy, self-consistent screening and spin branches modify spacings; in particular coupled spin branches in a charging model can generate two resonances per $h/e$ cycle without changing the electron flux quantum.^[ref]

No antidot dimensions, capacitances, lever arms or measured spectrum are supplied, so absolute periods and resonance voltages cannot be extracted. The sketch illustrates the mechanisms and regimes requested, rather than inventing a numerical device data set.

Improving the bare edge potential. A picture of noninteracting Landau levels simply intersecting a prescribed smooth confinement ignores the redistribution and screening of electron charge. A self-consistent electrostatic calculation combines gate and donor potentials, electron density and Coulomb interactions. Where a partially occupied Landau level has a large density response, electrons screen strongly and create a compressible strip with nearly pinned level energy. Regions with the chemical potential in a gap are incompressible and support much of the potential change. Consequently the screened edge alternates between compressible and incompressible strips, rather than preserving an arbitrary externally drawn slope. Finite temperature, disorder, exchange and edge reconstruction can require refinements beyond the simplest electrostatic model.^[ref]

Fractional states and composite fermions. Very clean two-dimensional systems show plateaus at selected fractional fillings, with small longitudinal resistance and a many-electron excitation gap. Electron-electron correlations are essential; partial filling of a noninteracting Landau level is not enough. The simplest composite fermion binds two statistical flux quanta to each electron. This is a representation of correlated electron motion, not a physical solenoid attached to a particle. With $B>0$, ${\Phi }_0=h/e$, and density $n_s$, the mean effective field isDefine a signed effective filling ${\nu }^{\ast }=n_s{\Phi }_0/B^{\ast }$. ThenFor ${\nu }^{\ast }=p>0$, filled composite-fermion levels produce $\nu =p/(2p+1)=1/3,2/5,3/7,\dots$. For reversed effective field write ${\nu }^{\ast }=-p$, giving $\nu =p/(2p-1)=1,2/3,3/5,\dots$; the nontrivial fractional upper sequence starts with $p=2$. If effective filling is defined as nonnegative using $|B^{\ast }|$, retain these as separate field-direction branches instead of using the signed expression blindly. At $\nu =1/2$ the mean $B^{\ast }$ vanishes and the effective filling diverges, so it is not an integer composite-fermion Hall plateau in this simplest construction. Attaching two flux quanta preserves fermionic statistics; the emergent integer-like gaps organize a prominent sequence of fractional electronic states.^[ref]

A gated quantum dot is an electron island confined in all spatial directions, weakly coupled by tunnel barriers to source and drain and tuned by a plunger gate. Small capacitance makes charge addition costly, while confinement resolves orbital levels. In the constant-interaction model,The charging contribution to successive addition potentials is $e^2/C_{\Sigma }$; the often used charging-energy scale $E_C=e^2/(2C_{\Sigma })$ differs by a factor of two. Orbital spacing and spin filling add further structure.

For weak coupling, $k_{B}T$ and lifetime broadening must be smaller than the relevant addition energies to see Coulomb blockade. Sequential tunnelling proceeds when an addition level is inside the source-drain bias window and the appropriate charge states are accessible. A gate sweep gives conductance peaks near charge degeneracies and low conductance between them. A bias-versus-gate map shows Coulomb diamonds, with excited-state lines when additional levels enter the window. Their slopes and sizes depend on source, drain and gate capacitances and the bias convention. Cotunnelling gives higher-order transport inside nominally blocked regions; stronger coupling and many-body effects can invalidate the simple sequential picture.

Coherent dot states as a qubit. A single-electron spin has basis $|0⟩=|\uparrow ⟩$, $|1⟩=|\downarrow ⟩$ in a magnetic field, split by $E_Z=|g^{\ast }|{\mu }_{B}B$. A qubit is a controllable coherent state $a|\uparrow ⟩+b|\downarrow ⟩$, not just a pair of classical current levels. Initialize through spin-selective loading or relaxation; resonant magnetic or spin-orbit-assisted electrical driving produces rotations. Adjacent occupied dots can couple through a gate-controlled exchange interaction. In the weak-tunnel symmetric Hubbard limit,Local spin rotations combined with a suitable exchange entangling operation provide universal control in the ideal spin-qubit proposal. Gate pulses must avoid unwanted orbital excitation and leakage, and complete coherent operations before dephasing destroys the information.^[ref]

For measurement, place the reservoir electrochemical potential between Zeeman levels so that only one spin state can tunnel out, or use Pauli spin blockade in a double dot. A nearby quantum point contact or single-electron transistor detects the resulting charge change. Such spin-to-charge conversion makes transport useful for reading a spin even when the stored information is not itself a net current.^[ref]

A double dot can alternatively encode a charge qubit in left/right occupation, with Hamiltonian $H=(\epsilon {\sigma }_z+2t_c{\sigma }_x)/2$. It allows electrical control and charge sensing, but couples strongly to charge noise. Spin qubits also suffer hyperfine, electrical and spin-orbit-related noise, as well as relaxation and readout errors. An observed Coulomb diamond alone establishes charging physics, not initialization, coherent control or a functioning qubit.

Carrier confinement changes both the energies and the available optical transitions of a semiconductor. A quantum well confines one direction and leaves two continuous momentum coordinates; a wire confines two directions and leaves one; a quantum dot confines all three and has discrete ideal levels. Confinement becomes important when its level spacing is comparable with thermal, lifetime and disorder energy scales, and strong excitonic confinement involves comparison with the exciton Bohr radius.

Transition energies. In a simple infinite-well effective-mass model of width $L$, a same-index electron-hole transition has thresholdThus decreasing $L$ generally blue-shifts interband absorption and emission through the $L^{-2}$ confinement contribution. Finite barriers, band mixing, strain, nonparabolicity, dielectric environment and Coulomb interactions alter this elementary estimate. In dots, confinement shifts and exciton binding have different size dependences, so a single inverse-square law is not an exact nanocrystal spectrum.

Dimensional density of states. For a parabolic continuum the phase-space volume below kinetic energy $E$ scales as $E^{d/2}$, hence the density of states scales as $E^{d/2-1}$. Each subband threshold therefore contributes a square-root onset in three free dimensions, a constant step in two, and an inverse-square-root singularity in one. A zero-dimensional ideal dot has discrete lines rather than a continuum power law. Real temperature, disorder and lifetime broadening smooth singularities and lines. Optical absorption uses the joint electron-hole density of states multiplied by transition matrix elements and occupations; a bare electronic density of states is not the entire absorption spectrum.

Selection and Coulomb effects. Envelope-function overlap and Bloch-state dipole selection rules determine allowed transitions and their polarization. For equal ideal infinite-well envelopes, orthogonality favors matching transverse indices; finite barriers and asymmetric fields can relax that envelope rule. Reduced dimensionality can enhance electron-hole attraction and oscillator strength near an exciton resonance, but the binding energy depends on the actual confinement and dielectric screening. Intersubband transitions within a conduction band are different from interband recombination; in a quantum well they require an electric-field polarization component along the confinement direction.

Devices. Quantum wells, wires and dots allow wavelength engineering, carrier localization and altered optical gain for LEDs and semiconductor lasers. Concentrating states near selected transition energies can improve differential gain and reduce thresholds under appropriate injection and loss conditions. Dot ensembles can instead have substantial inhomogeneous broadening from size variation; nonradiative surface traps and carrier capture can limit an otherwise attractive design. Material confinement does not alone ensure high quantum efficiency.

An applied field across a quantum well shifts electron and hole envelopes apart, usually red-shifting the exciton transition and reducing overlap: the quantum-confined Stark effect. This supports electroabsorption modulation and tuneable optical transitions. Conduction-band intersubband energies can also be engineered for infrared detectors and cascade-laser designs. Optical waveguides and cavities confine photons and affect mode overlap or spontaneous-emission rates, but that photonic confinement is distinct from the carrier quantization derived above. Both must be specified when predicting a real device's threshold, spectrum and output.

A high-mobility modulation-doped GaAs-AlGaAs electron gas is grown by molecular beam epitaxy as a clean layered semiconductor heterostructure. An undoped gallium arsenide region is followed by an undoped aluminium gallium arsenide spacer and a donor-doped barrier region, commonly with a protective cap. The closely matched crystal structures allow a high-quality heterojunction. The spacer supplies a crucial separation: the mobile electrons reside away from the ionized donors, reducing impurity scattering compared with putting the donors directly in the conducting layer.

The larger conduction band energy on the aluminium gallium arsenide side permits donor electrons to transfer into gallium arsenide. The resulting charge separation creates band bending; together with the band offset, it forms a roughly triangular quantum well at the interface. The normal-direction wavefunction is confined, while motion parallel to the interface remains approximately free:When only the lowest confinement subband is occupied, this is a two-dimensional electron gas. It is the quantized normal motion, not a physically zero layer thickness, that makes the low-energy system two-dimensional.

At zero magnetic field, one occupied spin-degenerate parabolic subband has constant density of states per area per energy, $D_0=m^{\ast }/(\pi {\hslash }^2)$ above its edge. A perpendicular field quantizes the in-plane orbital motion into Landau levels:Here $g^{\ast }$ is the material's effective spin factor and $e$ is the positive elementary charge; no free-electron $g=2$ assumption is made for this semiconductor. Each resolved spin branch contains $e|B|/h$ states per unit area. The ideal density of states becomeswith Landau-level broadening in a real sample. The Landau filling factorcounts the carrier density in units of one spin-resolved level's degeneracy. Two unresolved spin branches have twice that degeneracy; resolved branches must not each be counted twice.

Disorder localizes states in the broadened level tails, while extended states occur near level centres. As $B$ varies, occupation of localized states can change without changing the number of current-carrying edge channels. This produces a finite-width quantum Hall plateau, rather than quantization only at isolated fields. In a mobility gap, longitudinal resistivity approaches zero and the Hall magnitude is $R_K/N=h/(N{e}^2)$ for $N$ occupied transmitting branches. When the chemical potential passes through extended states, longitudinal dissipation peaks and the Hall value changes to another plateau. A spectral density of states can remain nonzero where transport is localized. Very strong disorder can destroy the resolved quantum Hall regime; the statement is not that any amount of disorder improves it.

The original plot is schematic, not fitted data. At fixed sheet density, increasing $|B|$ decreases Landau filling factor, so the Hall magnitude climbs through $R_K/N$ plateaus while longitudinal peaks separate the plateaus. The signed Hall voltage depends on carrier and probe conventions.

For the gate calculation, the target sheet density is fixed by the desired Landau filling factor:Use top-gate density tuning in the parallel-plate approximation. The geometric capacitance per unit area isThereforeThe gate must become more negative relative to the electron gas, reducing its density. The voltage is the change from the gate setting associated with the stated initial density; if that setting is defined as zero, it is the required gate voltage. Work-function offsets, trapped charge and quantum capacitance are neglected. An absolute voltage referenced to some other uncalibrated potential cannot be inferred from geometry alone. Numerical values use exact SI $h=6.62607015\times 10^{-34}\mathrm{J}\mathrm{s}$ and $e=1.602176634\times 10^{-19}\mathrm{C}$, and ${ϵ}_0\simeq 8.8541878188\times 10^{-12}\mathrm{F}{\mathrm{m}}^{-1}$.^[ref]

For the subsequently specified five-channel plateau, the chemical potential between the fifth and sixth resolved branches means $N=5$, not ten. The physical contact order in the PDF is $1,2,3,4$ along one side of the mesa. Use ideal equilibrating Ohmic contacts and the Landauer-Büttiker formula, rather than inferring a longitudinal measurement merely from the contacts being drawn on one edge.

Choose one field polarity so the chiral order is $1\to 2\to 3\to 4\to 1$. With $G_H=5e^2/h$,Contacts 2 and 4 are voltage probes, so $I_2=I_4=0$. With $V_3=0$, this gives $V_2=V_1$, $V_4=V_3=0$, and $I_1=G_H{V}_1$. Hencefor this circulation. Reversing the field reverses the contact order and gives $R_{13,24}=-h/(5e^2)$ with the same voltage ordering. The resistance magnitude is $5.16\mathrm{k\Omega }$; it is not zero. Contact 2 samples the outgoing source potential and contact 4 the outgoing drain potential for the chosen chirality.

The antidot is a depleted island supporting closed quantum Hall edge states. Tunnelling between those states and opposite propagating edges can produce resonant backscattering and resistance peaks as $B$ varies. One electronic Aharonov-Bohm phase winds by $2\pi$ when flux through a fixed effective orbit area $S$ changes by $h/e$. Using the supplied area as that effective area,With the two spin-split branches of the lowest orbital level occupied, the common Coulomb-dominated antidot oscillation model has two charge rearrangements per added $h/e$ flux. Both branches contribute to charge buildup; screening and their capacitive coupling can make tunnelling through the outer edge occur twice during the cycle. It then givesThis is two electron-tunnelling resonances per flux cycle, not evidence that the mobile particles have charge $2e$. The primary charging model specifically addresses this two-spin regime.^[ref]