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A direct band gap has its conduction minimum and valence maximum at the same crystal momentum. A photon can then connect the band-edge states with negligible momentum change. An indirect band gap requires an additional phonon to supply or remove momentum, making radiative recombination much less probable. Direct-gap materials such as gallium arsenide or gallium nitride are therefore usually better for a light-emitting diode than silicon.

For the graded junction, let $q=|e|>0$, ${\epsilon }_s={\epsilon }_0{\epsilon }_r$, and use electrostatic potential $\phi$ with $E_x=-{\phi }^{\prime }$. Fully ionized dopants have charge density $\rho =q(N_D-N_A)=q\alpha x$, so Poisson's equation is ${\phi }^{\prime \prime }=-q\alpha x/{\epsilon }_s$. The paper's displayed plus sign corresponds to using the negative potential $V=-\phi$, or a signed electron charge in that formula. The positive barrier magnitude and charge magnitude must be used consistently in the width below.

The intended compensation point is $x=0$, where $N_D=N_A$ and the net doping changes sign. A locally neutral model with comparable electron and hole mobilities has its lowest carrier conductivity near there. The depletion approximation neglects mobile-carrier conductivity throughout the layer, so it does not by itself locate an exact conductivity minimum; unequal mobilities or asymmetric carrier profiles can shift it.

Let the depletion edges be $x=\pm d$. With zero exterior field, integrating $E_x^{\prime }=\rho /{\epsilon }_s$ and imposing $E_x(\pm d)=0$ gives the linearly graded p-n junction fieldIts integral gives $\phi (x)=\phi (0)+q\alpha (d^{2}x-x^3/3)/(2{\epsilon }_s)$, so the electric potential increases toward the n-type side while the electron band edges $E_c,E_v$ bend downward together. Their separation is the local band gap, and the equilibrium electrochemical potential is flat. The built-in potential arises when carrier diffusion exposes ionized dopants until the opposing field balances further diffusion.

Finally the positive barrier isWith total width $w=2d$, this yields the linearly graded junction depletion widthHere $\alpha >0$ labels p-to-n progression with increasing $x$; otherwise use its magnitude in the width formula.

For an acoustic phonon with ${\omega }_q\simeq v_{s}q$, energy and crystal momentum conservation require $E_{{\mathbf{k}}^{\prime }}-E_{\mathbf{k}}=\pm \hslash v_{s}q$ and ${\mathbf{k}}^{\prime }-\mathbf{k}=\pm \mathbf{q}+\mathbf{G}$. The sound speed is usually much smaller than the relevant electron velocity in a metal, so scattering can change the electron's direction substantially while changing its energy only slightly. It is approximately elastic for many transport calculations, though its finite energy transfer is essential for cooling.

The middle panel gives an allowed backscattering example with a small energy loss. In a degenerate metal, the Pauli exclusion principle blocks occupied final states, restricting low-temperature scattering to a thermal neighborhood of the Fermi surface. Phonon occupations also shrink on cooling. A normal process has $\mathbf{G}=0$; an Umklapp process transfers reciprocal-lattice momentum. In semiconductors, accessible valleys and their separation add further momentum constraints.

An optical phonon often has approximately constant energy $\hslash {\omega }_0$ over the relevant wavevector range. Its absorption or emission therefore moves the electron between energy surfaces separated by this finite amount, with the phonon supplying the associated crystal momentum modulo a reciprocal vector. The last panel shows emission between two points on a parabolic conduction band.

Emission from a band with a lower edge requires at least $\hslash {\omega }_0$ of available kinetic energy and an unoccupied final state. For nondegenerate hot carriers this produces a threshold and can lead to rapid energy loss in successive phonon emissions. Absorption is weighted by the Bose-Einstein distribution $n_B({\omega }_0)$, while emission has the factor $n_B+1$; absorption is strongly suppressed at $k_{B}T\ll \hslash {\omega }_0$. In a metal, Pauli blocking also prevents an electron near the Fermi energy from simply dropping into the occupied Fermi sea.

Different measurements reveal different aspects of electronic band structure; a convincing determination combines their constraints.

Angle-resolved photoemission. In angle-resolved photoemission spectroscopy, photons of known energy eject occupied electrons. Measuring their kinetic energy and emission angle reconstructs binding energy and the component of crystal momentum parallel to the surface:Here $\Phi$ is the sample work function when kinetic energy is referenced to the nearby vacuum; an analyzer energy scale requires its own work-function calibration. Momentum is conserved modulo a surface reciprocal lattice vector, neglecting photon momentum. Tracking the peaks maps occupied dispersion relations and the Fermi surface. The measured intensity also contains the matrix element, the Fermi-Dirac distribution and the spectral function, so an absent bright feature does not establish an absent band. For a three-dimensional solid, the perpendicular momentum requires a final-state model. Inverse photoemission spectroscopy probes unoccupied states by injecting electrons and detecting emitted photons.

Optical spectroscopy. Photon absorption and ellipsometry measure interband transitions, optical selection rules and the complex dielectric response. Because optical photon momentum is small on the scale of the Brillouin zone, direct transitions approximately preserve crystal momentum. Their onset constrains a direct band gap; a threshold involving a phonon can reveal an indirect band gap. Peak positions constrain energy differences between bands, but the response also depends on the joint density of states and optical matrix elements, so it does not uniquely determine every $E_n(\mathbf{k})$.

Quantum oscillations and cyclotron resonance. In clean samples at low temperature, the de Haas-van Alphen effect measures oscillations in magnetization and the Shubnikov-de Haas effect measures oscillations in electrical resistivity as the inverse magnetic field is varied. Their period in inverse magnetic field is $1/F$, where Onsager quantization relates $F$ to an extremal Fermi-surface area perpendicular to the field:Rotating the magnetic field maps the geometry of extremal orbits. The thermal damping determines the cyclotron effective mass,with the appropriate magnitude for a hole orbit. Cyclotron resonance supplies the corresponding dynamical mass through ${\omega }_c=eB/m_c$. These are detailed probes near the Fermi level, rather than measurements of all occupied bands. Diffraction supplies the reciprocal lattice needed to label the measured momenta, but diffraction by itself is not a measurement of electronic dispersion.

Band edges and optical transitions. A direct band gap has the conduction minimum and valence maximum at the same crystal momentum. A near-edge photon then connects the two almost vertically on an energy-versus-wavevector plot, because its momentum is small on the Brillouin zone scale. An indirect band gap has the extrema at different momenta, so an additional momentum transfer, commonly supplied by phonon absorption or emission, is required for a near-edge radiative transition. This reduces its probability relative to an allowed direct transition.

Near the zone centre, an isotropic direct-gap model has $E_c(k)=E_c+{\hslash }^2{k}^2/(2m_e^{\ast })$ and downward valence dispersions $E_{v,j}(k)=E_v-{\hslash }^2{k}^2/(2m_{h,j}^{\ast })$. The heavy-hole and light-hole bands are the upper branches with large and small positive hole masses: the heavy branch is flatter. In common cubic semiconductors these arise from the $j=3/2$ manifold, while spin-orbit coupling places the $j=1/2$ split-off valence band lower by ${\Delta }_{\mathrm{so}}$. Its thermally generated hole population is suppressed by approximately $e^{-{\Delta }_{\mathrm{so}}/(k_{B}T)}$ relative to upper-valence holes, apart from density-of-states factors. Neglect is justified when ${\Delta }_{\mathrm{so}}\gg k_{B}T$; it is not a universal exclusion of this band at arbitrary temperature.

For an indirect material such as Si, the conduction minimum need not be at $\Gamma$. In applying the carrier-density formulae, $E_c$ must mean the actual minimum of the included conduction valley. The supplied scalar effective masses and densities of states constitute a simplified band-edge model; they do not specify Si's full valley anisotropy or multiplicity.

Carrier populations. Let $f(E)$ be the Fermi-Dirac distribution. In the nondegenerate conduction tail, $f(E)\simeq e^{-(E-\mu )/(k_{B}T)}$. Set $x=E-E_c$ and integrate the given density of states:The integral is $\Gamma (3/2)(k_{B}T{)}^{3/2}=\sqrt{\pi }(k_{B}T{)}^{3/2}/2$. Defining the effective density of states givesThe factor two is already included in the supplied density of states; it must not be added a second time.

A hole is an unoccupied valence state. For $E$ sufficiently below $\mu$, $1-f(E)\simeq e^{(E-\mu )/(k_{B}T)}$. Substitution of $x=E_v-E$ gives in exactly the same wayTheir product eliminates the chemical potential:This is the semiconductor mass-action law at thermal equilibrium. In an intrinsic semiconductor, charge neutrality additionally givesIn a doped semiconductor the product still applies in this nondegenerate equilibrium model, but the two populations need not be equal.

Intrinsic chemical potential. Taking logarithms of $n=p$ yields the intrinsic-semiconductor chemical potentialFor unequal band degeneracies, use the first form with the full $N_c,N_v$. For the supplied mass ratio $m_h^{\ast }/m_e^{\ast }=1/2$, the shift from midgap at $300\mathrm{K}$ is approximately $-13.4\mathrm{meV}$, toward the valence edge.

Three temperature regimes. The original plot runs from high temperature on the left to low temperature on the right. At high temperature, thermal excitation across the gap dominates and $n\simeq p\simeq n_i$ rises rapidly with temperature. In the middle, donors and acceptors are effectively ionized, the material is extrinsic, and $n\simeq N_D-N_A$ makes the plateau. At low temperature, dopant freeze-out binds increasing numbers of electrons to donor levels, reducing the mobile-electron population as the sample cools. Its activation scale is a donor binding energy, not the full band gap. Compensation and incomplete ionization affect that regime.

Gap estimate from the original figure. On the dashed intrinsic branch, $n_i=C{T}^{3/2}{e}^{-E_g/(2k_{B}T)}$. Hence band-gap extraction from intrinsic carrier activation uses the slope of $\ln (n_i/T^{3/2})$ versus $1/T$. With $x=1000\mathrm{K}/T$ and $k_B$ expressed in eV/K, two points giveThe very compressed intrinsic branch is only approximately readable: $n_i\sim 10^{15}\mathrm{c}{\mathrm{m}}^{-3}$ near $x\sim 1.8$ and $n_i\sim 10^{13}\mathrm{c}{\mathrm{m}}^{-3}$ near $x\sim 2.5$. These give $E_g\sim 1.0\mathrm{eV}$, rather than a precision determination. Neglecting the thermal prefactor gives about $1.13\mathrm{eV}$ from those same rough points. Thus a gap of order $1$–$1.1\mathrm{eV}$ is justified by this schematic plot; its resolution does not support distinguishing a few hundredths of an electronvolt. The declining freeze-out branch must not be used to infer the full gap.

Room-temperature densities. At $300\mathrm{K}$, the supplied masses giveIn the fully ionized extrinsic plateau, put $N=N_D-N_A=10^{15}\mathrm{c}{\mathrm{m}}^{-3}$. Charge neutrality and the mass-action law implySince $n_i\ll N$, $n\simeq 10^{15}\mathrm{c}{\mathrm{m}}^{-3}$ is insensitive to the imprecise gap. The minority density is much more sensitive:Using $E_g=1.0\mathrm{eV}$ gives $n_i\simeq 5.8\times 10^{10}\mathrm{c}{\mathrm{m}}^{-3}$ and $p\simeq 3.3\times 10^6\mathrm{c}{\mathrm{m}}^{-3}$. Using $1.1\mathrm{eV}$ instead gives $n_i\simeq 8.3\times 10^9\mathrm{c}{\mathrm{m}}^{-3}$ and $p\simeq 7.0\times 10^4\mathrm{c}{\mathrm{m}}^{-3}$. These are explicitly conditional estimates within the stated mass model. The plot alone cannot fix a precise minority density because the uncertain gap occurs inside an exponential.

Noninteracting spectral line. Treat $\mathbf{k}$ as a wavevector, so physical crystal momentum is $\hslash \mathbf{k}$. Write ${\Omega }_{\mathbf{k}}={\epsilon }_{\mathbf{k}}/\hslash$; an energy zero at the chemical potential can be chosen throughout. The temporal factor of a noninteracting state is $e^{-i{\Omega }_{\mathbf{k}}t}$. With the Fourier transform convention $\tilde{\psi }(\omega )=\int dt{e}^{i\omega t}\psi (t)$,Thus its normalized frequency spectral function isOne should not square the delta distribution as if it were an ordinary finite-time transition amplitude. More precisely, the fermionic retarded Green function is $G_0^R(\mathbf{k},t)=-i\Theta (t)e^{-i{\Omega }_{\mathbf{k}}t}$. Its Fourier transform is $(\omega -{\Omega }_{\mathbf{k}}+i{0}^{+}{)}^{-1}$, whose negative imaginary part divided by $\pi$ is the same delta peak.

Interactions and lifetime. Interactions change the dispersion through the real part of the self-energy and permit decay into other excitations through its imaginary part. In the simplest quasiparticle-pole model, exponential decay of the retarded amplitude givesPerforming the causal integral,The corresponding Lorentzian quasiparticle spectral peak isIts total frequency integral is one. The exponential amplitude lifetime is $1/{\Gamma }_{\mathbf{k}}$; the probability lifetime is $1/(2{\Gamma }_{\mathbf{k}})$. Describing ${\Gamma }_{\mathbf{k}}$ as a scattering rate therefore requires the lifetime convention to be specified. The energy half-width is $\hslash {\Gamma }_{\mathbf{k}}$.

A general interacting electron is more accurately described by $G^R=Z_{\mathbf{k}}/(\omega -{\Omega }_{\mathbf{k}}^{\ast }+i{\Gamma }_{\mathbf{k}})+G_{\mathrm{inc}}^R$ near the pole. The coherent peak then integrates to the quasiparticle residue $Z_{\mathbf{k}}$ and an incoherent continuum carries the remaining weight. In an energy-unit self-energy convention,Linearizing the real denominator gives $Z=[1-{\hslash }^{-1}{\partial }_{\omega }\mathrm{Re}{\Sigma }^R{]}^{-1}$ and $\Gamma =-Z\mathrm{Im}{\Sigma }^R/\hslash$ at the pole. The requested unit-weight Lorentzian is the normalized quasiparticle model, not the most general exact interacting spectrum.

Peak position and width. At fixed $\mathbf{k}$, put $\gamma =\gamma (\mathbf{k})>0$ and $\Omega =\hslash k^2/(2m^{\ast })$. Differentiation givesIt is positive for $\omega <\Omega$ and negative for $\omega >\Omega$, so the only maximum is at $\Omega$, with height $1/(\pi \gamma )$. Setting $A$ to half this height gives $(\omega -\Omega {)}^2={\gamma }^2$. ThereforeIn energy units the maximum is ${\hslash }^2{k}^2/(2m^{\ast })$ and the half-width is $\hslash \gamma (\mathbf{k})$. Frequency dependence of the self-energy would require reconsidering both the shape and peak position.

Fermi gas and Fermi liquid. A noninteracting Fermi gas has a delta-function spectral line at its bare dispersion for every momentum. A normal three-dimensional Fermi liquid has a shifted coherent peak plus incoherent spectral weight; close to the Fermi surface its width scales as $(\epsilon -\mu {)}^2+(\pi k_{B}T{)}^2$. At zero temperature the peak becomes arbitrarily sharp at the Fermi surface, while it broadens farther away. Spectral functions include addition and removal weight; occupied-only photoemission contains an extra Fermi factor.

Photoemission measurement. A photon of known energy $h\nu$ ejects an electron. Measure its kinetic energy $E_{\mathrm{kin}}$ and emission direction. For binding energy $E_B\ge 0$ below the Fermi level and the appropriate calibrated work function $\Phi$, conservation of energy givesConservation of momentum parallel to a periodic surface giveswhere ${\mathbf{G}}_{\parallel }$ is a surface reciprocal-lattice vector. At suitable photon energies the photon momentum can be neglected; at higher energies it must be retained. The surface breaks perpendicular translation symmetry, so the perpendicular crystal momentum generally needs a final-state model. A two-dimensional band can be reconstructed directly from the parallel components.

Within the sudden approximation and electric-dipole approximation, photoemission intensity and spectral function are related byHere $E$ is measured relative to the chemical potential. Instrumental resolution convolves the product and inelastic scattering adds background. Thus ARPES maps the occupied electron removal spectral function, weighted by a matrix element; it does not measure the full unoccupied spectrum or an unweighted spectral function automatically. Bright ridges give dispersions, and intrinsic widths give decay information after instrumental effects are removed.

Reading the supplied image. Its bright ridges form a graphene-like cone. The crossing near $k_y=0$ is the Dirac point, not in general the Fermi level. In the paper's plotted energy coordinates its energy is roughly $E_D\sim 1.4$–$1.5\mathrm{eV}$. A velocity follows from a branch slope independently of the energy zero:For example, the lower branch moves by about $0.3\mathrm{eV}$ between $|k_y|\sim 0.03$ and $0.11{\mathring{\mathrm{A}}}^{-1}$. This gives $dE/dk\sim 3.8\mathrm{eV}\mathring{\mathrm{A}}$ andReading other points changes the estimate by tens of percent. The original exam image has unequal energy increments on nearly equally spaced labelled ticks, so it does not justify a precise fitted velocity. The value is an estimate of the cone slope extrapolated to the Fermi crossing, rather than a measured derivative exactly at a visibly identified Fermi cutoff.

To determine a Fermi energy, first calibrate the Fermi edge, then subtract the chosen reference energy. Neither a Fermi-level marker nor an explicit energy-zero convention is supplied in this crop. If its upper termination near $1.9\mathrm{eV}$ is intended to represent the Fermi cutoff, the conditional graph answer is $E_F\simeq 1.9\mathrm{eV}$ on that axis, or $E_F-E_D\sim 0.4\mathrm{eV}$ relative to the Dirac crossing. Identifying the crossing itself as the Fermi energy would incorrectly assume undoped graphene.

The research article cited by the exam identifies this as linearly polarized graphene ARPES and independently states $E_F-E_D\simeq 0.4\mathrm{eV}$ for the substrate-doped sample. That resolves the relative energy when this external calibration is admitted.^[ref] The crop alone does not uniquely fix an absolute Fermi energy; the source-supported relative value and the conditional $1.9\mathrm{eV}$ axis reading should be distinguished.

Equilibrium junction. Put the p-type side on the left and n-type side on the right. When they are joined, electrons diffuse from n to p and electron holes diffuse from p to n. This leaves negative ionized acceptors on the p-side and positive ionized donors on the n-side of the depletion region. The resulting built-in electric field points from n to p, opposing further diffusion. At equilibrium there is one constant Fermi level, and drift and diffusion currents cancel for each carrier species.

In the nondegenerate, fully ionized limit, the neutral-region carrier densities areThe conduction band and valence band lie higher on the p-side and bend down towards the n-side. The gap between them stays fixed for a homojunction. If $\psi$ increases towards the n-side, both edges shift by $-e\psi$, whileThus $n$ rises and $p$ falls continuously across the junction; neither mobile population is an exact step function. Their depletion exposes fixed dopant charge density, rather than an absence of every kind of charge. The built-in voltage is

Light emission. Forward bias lowers the barrier and injects minority carriers across the p-n junction. In a light-emitting diode, electron-hole recombination converts some of their energy into photons. A direct band gap permits efficient radiative transitions with nearly conserved crystal momentum; nonradiative channels compete. Near-edge emission has $\hslash \omega \simeq E_g$ and $\lambda \simeq hc/E_g$. Material composition and confinement select the emission colour. Reverse-bias saturation is not the ordinary LED operating mode.

Reverse current. Take $V=V_R>0$ and $I_R>0$ to mean reverse voltage and reverse current magnitudes. The Shockley diode equation in this convention isThe bias-independent $I_S$ term is the supply of thermally excited minority carriers from the neutral regions, swept across the junction by its electric field. The opposing injection current is reduced by the extra barrier energy $e{V}_R$ and is $I_S{e}^{-e{V}_R/(k_{B}T)}$. Their equality gives zero net current at zero bias; for $e{V}_R\gg k_{B}T$, the reverse current approaches $I_S$ until leakage or breakdown invalidates this ideal law. The collecting field need not create the minority carriers; their thermal supply limits the diffusion-dominated current.

For an ideal long junction of area $\mathcal{A}$, steady diffusion with recombination gives the diode minority-carrier diffusion currentIt depends on doping, geometry, carrier diffusion coefficients and lifetimes, and especially the intrinsic carrier concentration. Depletion-region generation current and surface leakage can add nonideal contributions to the measured reverse current.

Band-gap estimate from the data. Read a nearly flat region well above the small-bias knee and below the high-bias upturn, rather than estimating $I_S$ in the breakdown region. For a diffusion-dominated junction with nearly temperature-independent gap and effective masses,so $I_S=C(T)T^3{e}^{-E_g/(k_{B}T)}$, where $C(T)$ includes transport and doping factors. Extracting a semiconductor band gap from diode saturation current amounts to measuring the slope of $\ln [I_S/(C(T)T^3)]$ against $1/T$: it is $-E_g/k_B$. If the prefactor is taken approximately constant over a short interval,Approximate readings from the original PDF plateaus areUsing the two warmer curves and $k_B=8.6173\times 10^{-5}eV/K$ givesKeeping the $T^3$ factor but taking the residual transport factor constant changes this estimate to approximately $0.57\mathrm{eV}$. The justified graphical estimate is thereforeThe colder curve is a genuine limitation of the supplied data: the $0$ to $-45{}^{\circ }\mathrm{C}$ pair gives only about $0.32\mathrm{eV}$ with a constant prefactor, and the endpoint pair gives about $0.42\mathrm{eV}$. Thus all three cannot support one precise diffusion-only activation slope. A depletion-region generation current, approximately proportional to $n_i$ rather than $n_i^2$, can have a roughly half-gap activation energy; other leakage and temperature-dependent transport can also alter the slope. The PDF alone does not identify their relative contributions. A reliable precision gap measurement would use more temperatures and verify the transport regime instead of forcing one fit through these three readings.

Energy and momentum measurement. In angle-resolved photoemission spectroscopy, monochromatic photons illuminate a clean surface in vacuum, and an electron energy analyzer measures the outgoing kinetic energies and emission directions. Measuring both gives the occupied electronic band structure, rather than only a momentum-integrated distribution of removal energies.

Choose a common energy reference for initial and final states. Let $E_i$ be the initial electron energy, $E_F$ the Fermi energy, and $E_{\mathrm{vac}}=E_F+\varphi$ the vacuum level immediately outside the sample. The binding energy is $E_B=E_F-E_i\ge 0$. For a direct emission event without additional losses, conservation of energy givesHere the work function $\varphi$ is the energy from the Fermi level to the local vacuum. The initial and final energies are total single-electron energies on the same scale, while $E_{\mathrm{kin}}$ is measured above vacuum. The diagram illustrates each interval independently.

Neglecting ultraviolet photon momentum, photoemission momentum conversion giveswhere $\theta$ is measured from the surface normal. Parallel crystal momentum is conserved modulo a surface reciprocal lattice vector; the surface breaks perpendicular translation symmetry. A three-dimensional sample therefore generally needs a final-state model to infer perpendicular momentum. The stated two-dimensional sheet avoids that ambiguity. The kinetic energy used in this formula is the sample-vacuum value; if the analyzer and sample have different work functions, their contact potential must be included when converting the analyzer's reading, as in photoelectron binding energy reference.

Spectral information. Define $ϵ=E_i-E_F=-E_B$ and the electron spectral function by $A(\mathbf{k},ϵ)=-\mathrm{Im}{G}^R(\mathbf{k},ϵ)/\pi$. In the sudden approximation, the basic photoemission intensity and spectral function relation isbefore instrumental broadening and background are included. Here $f$ is the Fermi-Dirac distribution, and $\mathcal{M}$ is the transition matrix element. The electron removal spectral function contains the occupied part of the spectrum. In a noninteracting band it has a delta peak at the band energy; interactions shift and broaden peaks and can add incoherent weight. Thus peak trajectories reveal dispersion, while line shapes can constrain lifetimes after resolution effects are accounted for. Dividing by known matrix and occupation factors can estimate $A$ where those factors are appreciable; intensity alone is not identical to $A$, and a missing peak can reflect a matrix-element suppression. States well above $E_F$ are not accessible to ordinary low-temperature photoemission.

Two independent band-structure probes. First, the de Haas-van Alphen effect measures oscillatory magnetization as Landau levels cross the Fermi level when a magnetic field changes. The inverse-field frequency iswhere $S_{\mathrm{ext}}$ is an extremal Fermi surface cross-sectional area perpendicular to the field. Changing field orientation maps its shape. This reveals the momentum-space geometry of occupied bands; the related Shubnikov-de Haas effect measures oscillatory resistance.

Second, absorption or reflectance spectroscopy detects interband transitions. Photon energies at absorption edges and peaks constrain the band gap and interband energy differences. For a direct band gap, negligible photon momentum selects approximately vertical transitions in the band diagram, weighted by the joint density of states and transition matrix elements. An indirect transition needs a phonon to carry the extra crystal momentum. These measurements provide evidence beyond a free-electron parabola, although an optical spectrum alone does not reconstruct every band's dispersion.

Reading the graphite spectra. For each direction, follow a moving peak through successive angles and convert each peak's own kinetic energy to $k_{\parallel }$; angle is not itself proportional to momentum over this wide range. The prominent dispersing valence feature starts at roughly $7$–$9\mathrm{eV}$ binding energy near $\Gamma$ and moves towards lower binding energy as $k_{\parallel }$ increases. Along $\Gamma K$ it approaches the Fermi level at the corner, then turns back to larger binding energy on continuing beyond the corner. Along $\Gamma M$ it reaches a finite minimum binding energy of roughly $3$–$4\mathrm{eV}$ near the edge midpoint and turns back; it does not reach the Fermi level there. Additional deeper peaks describe other occupied valence branches, with visibility varying across the spectra.

A useful qualitative description is the upper occupied $\pi$ band of the nearest-neighbour model of graphene: $E_{\pi }=-t|f(\mathbf{k})|$. It rises from $-3t$ at $\Gamma$ to zero at $K$, but only to $-t$ at $M$. The schematic curve in the figure captures those two different behaviours. It is not a full multi-orbital assignment or a quantitative fit to graphite, whose deeper valence features are also visible in the supplied spectra.

Angle needed to reach the corner. The corner's parallel wavevector isUse the near-zero binding energy of the upper valence band at that point. With the sample work function interpreted as the stated $3.8\mathrm{eV}$ separation below vacuum,HenceThe energy and angle readings in the PDF are approximate. If a peak at the corner were instead assigned a small binding energy $E_B$, the estimate becomesFor $E_B=0$–$1\mathrm{eV}$ this gives about $57$–$60^{\circ }$, consistent with the near-Fermi feature in that angular range. Substituting the full photon energy for the kinetic energy would omit the work-function cost and underestimate the required angle.

For a lattice-periodic one-electron Hamiltonian, Bloch's theorem givesHere $\mathbf{R}$ is any lattice translation and $n$ labels an energy band. Under that translation the wavefunction gains phase $e^{i\mathbf{k}\cdot \mathbf{R}}$. The crystal momentum $\hslash \mathbf{k}$ labels this translation eigenvalue and is defined modulo $\hslash \mathbf{G}$ for a reciprocal lattice vector $\mathbf{G}$.

The mechanical momentum is different. In zero magnetic field its operator is $-i\hslash \nabla$, which acts asA general Bloch state is therefore not a mechanical-momentum eigenstate. Expanding its periodic factor gives plane-wave components with momenta $\hslash (\mathbf{k}+\mathbf{G})$, with probabilities determined by their Fourier coefficients. For a local Hamiltonian $p^2/(2m_e)+V(\mathbf{r})$, its mean momentum satisfiesnot generally $\hslash \mathbf{k}$. The lattice exchanges actual momentum with the electron; crystal-momentum conservation in scattering is instead modulo reciprocal-lattice vectors, as in Umklapp scattering.

For a Hamiltonian with a lattice-periodic potential $V(\mathbf{r}+\mathbf{R})=V(\mathbf{r})$, its simultaneous energy eigenstates and lattice-translation eigenstates can be chosen in the Bloch wave formEquivalently, ${\psi }_{n\mathbf{k}}(\mathbf{r}+\mathbf{R})=e^{i\mathbf{k}\cdot \mathbf{R}}{\psi }_{n\mathbf{k}}(\mathbf{r})$. The index $n$ labels an energy band; crystal momentum $\hslash \mathbf{k}$ is defined modulo a reciprocal lattice vector. These are the content of Bloch's theorem.

Phonon scattering changes the occupation or propagation of lattice-vibration normal modes through interactions with boundaries, defects or other phonons. Anharmonic terms permit phonon-phonon scattering. Different processes need not relax heat flow equally: normal processes conserve total crystal momentum within the first Brillouin zone, whereas Umklapp scattering changes its representative by a nonzero reciprocal lattice vector.

A direct band gap compares two energy bands at the same crystal momentum. A global gap instead requires the lowest energy of the upper band to exceed the highest energy of the lower band, allowing the two extrema to occur at different momenta. For example, the periodic toy bands $E_1(k)=A\cos k$ and $E_2(k)=A\cos k+\delta$, with $A>0$ and $0<\delta <2A$, have positive direct separation $\delta$ everywhere but global overlap $2A-\delta$. A positive direct splitting at each Brillouin zone boundary therefore does not alone establish an insulating filled band. At a suitable electron count the overlap can produce both electron and hole pockets.

A charge $-e$ starting at a band minimum when the field $E_0(\sin \omega t,\cos \omega t)$ is applied acquires the displayed crystal momentum. Its orbit is a shifted circle. For masses $m_x,m_y$, the real-space coordinates are proportional to $(\sin \omega t-\omega t)/m_x$ and $(\cos \omega t-1)/m_y$: an elliptic oscillation plus a uniform drift. Omitting the integration constant changes the physical initial condition and reduces the maximum light-axis kinetic energy by a factor of four.

A tunnel diode is a p-n junction with sufficiently heavy semiconductor doping on both sides to make a thin depletion region and permit substantial interband tunnelling. The neutral regions are degenerate semiconductors. Its distinctive forward current-voltage characteristic contains a peak followed by a valley: over part of the curve, increasing the applied electric potential difference decreases the electric current. The Esaki tunnel-diode experiment made this behavior experimentally concrete.

The useful quantity is the local slope, not the ratio of total voltage to total electric current. With conventional electric current $I$ entering the positive-voltage terminal, defineNegative differential resistance means $g_d<0$, hence $r_d<0$ where defined. A forward operating point can still have $V>0$, $I>0$ and absorbed power $VI>0$. A small voltage increase then gives a negative current increment; this does not make the total electric current negative or turn the device into an unlimited source of energy. The external supply sets the operating point and supplies the energy available for an electronic amplifier.

An original idealized construction explains the shape. Put the n-type semiconductor on the left and the p-type semiconductor on the right. Take $q>0$ as the elementary charge and $V=V_p-V_n$. Increasing forward bias lowers the right-hand electron energy levels relative to the left. Denote the two reservoir electrochemical potentials by ${\mu }_n,{\mu }_p$, so that ${\mu }_n-{\mu }_p=qV$. At zero temperature, occupied left-hand conduction band states extend up to ${\mu }_n$; empty right-hand valence band states start at ${\mu }_p$. For transfer conserving electron energy, the available interval isIt is nonempty only when its upper endpoint exceeds its lower endpoint. Both an occupied initial quantum state and an empty final quantum state must exist at the same energy. The Pauli exclusion principle prevents transfer into an already occupied final quantum state.

For the original diagram, choose arbitrary energy units with $E_{c,n}=-0.5$, ${\mu }_n=0$, ${\mu }_p=-u$ and $E_{v,p}=0.5-u$, where $u$ is $qV$ in those units. The available interval has widthThus $L(0.25)=0.25$, $L(0.50)=0.50$, $L(0.70)=0.30$, and $L(1.15)=0$. Initially forward bias opens a transfer window; further forward bias closes it by moving the right-hand valence band edge below the left-hand conduction band edge. This is a state-counting illustration, not a formula for a measured electric current.

For reverse bias, the transfer direction changes: occupied right-hand valence band states can feed empty left-hand conduction band states. In the same construction, $u=-0.70$ opens the interval $0<E<0.70$ for this reverse transfer. A narrow depletion region allows a large reverse quantum tunnelling electric current at small electric potential difference, whereas the ordinary Shockley diode equation predicts only a small reverse saturation electric current before diode reverse breakdown. At zero biasing, equal reservoir occupations give zero net electric current; quantum tunnelling does not require a net equilibrium flow.

A finite-temperature refinement replaces sharp occupation cutoffs with the Fermi-Dirac distribution. An illustrative weak-transfer expression isHere $\mathcal{W}\ge 0$ describes allowed initial/final quantum states and their coupling, and $f_n,f_p$ are Fermi-Dirac distributions with the respective electrochemical potentials. The occupation difference follows by subtracting the reverse transfer factor from the forward one: $f_n(1-f_p)-f_p(1-f_n)=f_n-f_p$. An overlap interval alone does not determine $\mathcal{W}$: transmission probability, density of states, crystal momentum selection and phonons can matter. A complete germanium calculation is more demanding than multiplying two constant density of states factors. At larger forward bias, ordinary carrier injection and diffusion supply a rising current branch even after direct band overlap is lost.

An Umklapp process conserves reduced crystal momentum modulo a nonzero reciprocal lattice vector. It can occur in electron-phonon scattering as well as phonon-phonon scattering; the lattice takes up the reciprocal-lattice momentum.

In a three-phonon Umklapp scattering process, the first-zone wavevectors obey the displayed equation for a nonzero reciprocal lattice vector $\mathbf{G}$, together with conservation of energy. The crystal momentum transferred to the lattice allows these processes to relax a phonon heat current. They are suppressed at sufficiently low temperature and often determine the approximate $1/T$ high-temperature thermal conductivity of a crystalline electrical insulator.